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1. 发明专利

JP2008117897A Prober and probing inspection method 审中-公开
标题翻译：检测和检测方法
公开(公告)号：JP2008117897A
公开(公告)日：2008-05-22
申请号：JP2006298915
申请日：2006-11-02
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： CHIBA KIYOTAKA , YAMAMOTO SATOSHI
IPC分类号： H01L21/66 , G01R31/26
摘要： PROBLEM TO BE SOLVED: To obtain a prober and a probing inspection method in which a tester and a probe card can be used efficiently and total cost of probing inspection can be reduced.
SOLUTION: The prober for connecting each terminal of a tester 30 with an electrode in order to inspect a semiconductor device formed on a wafer W by means of the tester comprises a probe card 24 having a probe 25 touching the electrode, a first wafer chuck 16A, a second wafer chuck 16B, first moving mechanisms 13A-18A for moving the first wafer chuck under the probe card, and second moving mechanisms 13B-18B for moving the second wafer chuck under the probe card wherein the first and second moving mechanisms move the first and second wafer chucks independently.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得可以有效利用测试器和探针卡的探测器和探测检查方法，可以降低总体探测成本。解决方案：用于将测试器30的每个端子与电极连接以便通过测试器检查形成在晶片W上的半导体器件的探测器包括探针卡24，其具有接触电极的探针25，第一晶片卡盘16A，第二晶片卡盘16B，用于使探针卡下方的第一晶片卡盘移动的第一移动机构13A-18A，以及用于使探针卡下方的第二晶片卡盘移动的第二移动机构13B-18B，其中第一和第二移动机构独立地移动第一和第二晶片卡盘。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007235070A Supporting device of surface plate, stage device, tester of device, and device manufacturing equipment 审中-公开
标题翻译：表面板的支撑装置，装置的装置，装置的制造装置以及装置的制造装置
公开(公告)号：JP2007235070A
公开(公告)日：2007-09-13
申请号：JP2006058343
申请日：2006-03-03
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： MASE FUMIO , CHIBA KIYOTAKA
IPC分类号： H01L21/66 , B23Q1/00
摘要： PROBLEM TO BE SOLVED: To provide a supporting device of a surface plate which can keep the positioning accuracy of a movable stage even when a load on the top surface of the surface plate changes with the movement of the movable stage on the surface plate or even when a pedestal or a floor for bearing the surface plate is deformed.
SOLUTION: A surface plate 2 is supported by one or more fixed-position supporting portions 20a to 20c which support the undersurface of the surface plate 2 via fixed support points and fixed-load supporting portions 40a to 40d which support points where the surface plate 2 is bent by the support of the fixed-position supporting portions 20a to 20c. The fixed-load supporting portions 40a to 40d reduce fluctuations in supporting load by expansion and contraction.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够保持可移动台的定位精度的表面板的支撑装置，即使当表面板的顶表面上的负载随着可移动台在表面上的移动而变化板或甚至当用于承载表面板的基座或地板变形时。解决方案：一个表面板2由一个或多个固定位置支撑部分20a至20c支撑，固定位置支撑部分20a至20c通过固定支撑点和固定负载支撑部分40a至40d支撑表面板2的下表面，固定支撑部分40a至40d支撑点表面板2由固定位置支撑部分20a至20c的支撑件弯曲。固定负载支撑部分40a至40d通过膨胀和收缩减少支撑负载的波动。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2008117968A Prober 审中-公开
标题翻译： PROBER
公开(公告)号：JP2008117968A
公开(公告)日：2008-05-22
申请号：JP2006300601
申请日：2006-11-06
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： CHIBA KIYOTAKA , MASE FUMIO
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a prober in which a probe needle and an electrode pad can be brought into contact correctly even if yawing exists in the moving stages of X axis and Y axis.
SOLUTION: The prober comprises a wafer chuck 16 for holding a wafer W, an X-axis moving stage 14 performing movement in the X-axis direction while mounting a Z-axis movement/rolling mechanism 15, a Y-axis moving stage 13 performing movement of the X-axis moving stage in the Y-axis direction, a base 12 for moving/supporting the Y-axis moving stage, first and second linear scales 42 and 43 provided on the upper surface of the Y-axis moving stage in parallel with the moving direction of the X-axis moving stage, and an arm having heads opposing the first and second linear scales fixed to the X-axis moving stage, respectively, wherein wafer chuck rotation in the plane of XY axes along with movement in the X-axis direction is detected from the readings of the first and second linear scales.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使在X轴和Y轴的移动级中存在偏转，也可以提供探针和电极焊盘正确接触的探测器。解决方案：探针包括用于保持晶片W的晶片卡盘16，X轴移动台14沿X轴方向移动，同时安装Z轴移动/滚动机构15，Y轴移动阶段13执行X轴移动台在Y轴方向的移动，用于移动/支撑Y轴移动台的基座12，设置在Y轴的上表面上的第一和第二线性标尺42和43 移动台与X轴移动台的移动方向平行，并且分别具有与固定到X轴移动台的第一和第二线性标尺相对的头部的臂，其中，在XY轴的平面中的晶片卡盘旋转根据第一和第二线性刻度的读数检测X轴方向的移动。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007324181A Prober and probing method 有权
标题翻译：探测和探测方法
公开(公告)号：JP2007324181A
公开(公告)日：2007-12-13
申请号：JP2006149659
申请日：2006-05-30
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： MASE FUMIO , CHIBA KIYOTAKA
IPC分类号： H01L21/66 , G01R1/06 , G01R31/26 , G01R31/28
摘要： PROBLEM TO BE SOLVED: To achieve a prober and a probing method capable of detecting a change in the contact pressure of a probe easily at low cost and capable of maintaining the contact pressure within a prescribed range.
SOLUTION: The prober connects each terminal of a tester to the electrode of an electronic device for inspecting the electronic device on a wafer W with the tester. The prober comprises: a probe card 25 having a probe 26 in contact with an electrode; a stage 18; moving mechanisms 12-17 for moving the stage; a travel control section 27; and alignment mechanisms 19, 23 for detecting the relative positions of the electrode and the probe. The prober also comprises: motor current measurement sections 62, 65 for measuring the current value of the drive motor of at least one moving shaft; and current-load operation sections 63, 66 for computing a load applied to at least one moving shaft from a motor current value when control is made to maintain a travel position.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了实现能够以低成本容易地检测探针的接触压力的变化并且能够将接触压力保持在规定范围内的探测器和探测方法。
解决方案：探测器将测试仪的每个端子连接到电子设备的电极，以便使用测试仪检查晶圆W上的电子设备。探测器包括：探针卡25，其具有与电极接触的探针26; 一个阶段18; 用于移动舞台的移动机构12-17; 行驶控制部27; 以及用于检测电极和探针的相对位置的对准机构19,23。探测器还包括：用于测量至少一个移动轴的驱动马达的当前值的马达电流测量部分62,65; 以及用于当进行控制以保持行驶位置时用于计算从电动机电流值施加到至少一个移动轴的负载的电流负载操作部63,66。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2005236025A Electron beam exposure apparatus and electron beam exposing method 审中-公开
标题翻译：电子束曝光装置和电子束曝光方法
公开(公告)号：JP2005236025A
公开(公告)日：2005-09-02
申请号：JP2004043157
申请日：2004-02-19
申请人： Riipuru:Kk , Tokyo Seimitsu Co Ltd , 株式会社リープル , 株式会社東京精密
发明人： FUKUI TOYOJI , CHIBA KIYOTAKA , SHIMAZU NOBUO , ENDO AKIHIRO
IPC分类号： G03F1/20 , G03F7/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide an electron beam exposure apparatus effectually employing a mask substrate for use in electron beam exposure and capable of reducing costs required for the exposure in a semiconductor manufacturing process. SOLUTION: The electron beam exposure apparatus comprises an electron beam source 14 for generating an electron beam 15; a mask 30 having a mask pattern in response to a pattern exposed to the surface of sample 40, a mask holder 31 for disposing and holding the mask 30 in a passage of the electron beam 15, and a scanning means 21 for deflecting the electron beam 15 such that the electron beam 15 scans the mask 30 thereon. The mask holder 31 holds the mask 30 variably in the relative position of the mask with respect to a scanning region of the electron beam 15 by the scanning means 21. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电子束曝光装置，其有效地使用用于电子束曝光的掩模基板，并且能够降低在半导体制造工艺中曝光所需的成本。电子束曝光装置包括用于产生电子束15的电子束源14; 具有响应于暴露于样品40的表面的图案的掩模图案的掩模30，用于将掩模30设置并保持在电子束15的通道中的掩模保持器31，以及用于使电子束偏转的扫描装置21 使得电子束15在其上扫描掩模30。掩模保持器31通过扫描装置21将掩模30相对于电子束15的扫描区域可变地保持在掩模的相对位置。（C）2005，JPO和NCIPI

6. 发明专利

JP2014192381A Semiconductor wafer mapping method and laser processing method of semiconductor wafer 有权
标题翻译： SEMICONDUCTOR WAFER MAPPING METHOD AND LASER PROCESSING METHOD OF SEMICONDUCTOR WAFER
公开(公告)号：JP2014192381A
公开(公告)日：2014-10-06
申请号：JP2013067324
申请日：2013-03-27
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： NOGUCHI TAKASHI , CHIBA KIYOTAKA
IPC分类号： H01L21/301 , B23K26/00 , B23K26/046 , B23K26/38 , B23K26/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer mapping method for smoothly implementing dicing by highly accurately measuring warpage or swell around a semiconductor wafer beforehand as a preparation step of cutting a semiconductor wafer and manufacturing a semiconductor chip in a semiconductor manufacturing device.SOLUTION: The semiconductor wafer mapping method in a laser processing machine for manufacturing a semiconductor chip by longitudinally and laterally cutting a semiconductor wafer S formed by longitudinally and laterally aligning predetermined circuits includes: sucking and holding the semiconductor wafer S on a movable table 12; irradiating a surface of the semiconductor wafer S with laser light; detecting reflection light reflected on the surface of the semiconductor wafer S to measure a surface height of the semiconductor wafer S; moving the movable table 12 in X and Y directions; and forming a trajectory line 19 of a measurement position on the surface of the semiconductor wafer S along an outer circumference S1 of the semiconductor wafer S to acquire a data map in the surface height of the semiconductor wafer S.
摘要翻译：要解决的问题：提供半导体晶片映射方法，用于通过高精度地测量半导体晶片周围的翘曲或溶胀来预先平滑地实施切割，作为半导体制造装置中切割半导体晶片和制造半导体芯片的准备步骤。解决方案：用于通过纵向和横向切割由纵向和横向对准预定电路形成的半导体晶片S的用于制造半导体芯片的激光加工机中的半导体晶片映射方法包括：将半导体晶片S吸持并保持在可移动台12上; 用激光照射半导体晶片S的表面; 检测在半导体晶片S的表面上反射的反射光，以测量半导体晶片S的表面高度; 在X和Y方向移动可移动工作台12; 并且沿着半导体晶片S的外周S1在半导体晶片S的表面上形成测量位置的轨迹线19，以获得半导体晶片S的表面高度的数据图。

7. 发明专利

JP2008182061A Prober 有权
标题翻译： PROBER
公开(公告)号：JP2008182061A
公开(公告)日：2008-08-07
申请号：JP2007014543
申请日：2007-01-25
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： CHIBA KIYOTAKA , MIZUMURA TSUTOMU
IPC分类号： H01L21/66 , G01R31/26 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a prober for increasing through-put by restricting an increase in installation area for the whole probing inspection and an increase in device cost. SOLUTION: The prober provides for inspecting a semiconductor device on a wafer with a tester and includes: a first wafer chuck 16A; a second wafer chuck 16B; a first probe card 24A having a probe, which comes into contact with a wafer held by the first wafer chuck; a second probe card 24B having a probe, which comes into contact with a wafer held by the second wafer chuck; an alignment camera 22; a first movement mechanism, which can move the first wafer chuck to a position under the first probe card and the alignment camera; and a second movement mechanism, which can move the second wafer chuck to a position under the second probe card and the alignment camera. The first and second movement mechanisms move the first and second wafer chucks respectively and independently. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过限制整个探测检查的安装面积的增加和设备成本的增加，提供用于增加通过量的探测器。解决方案：探测器提供用测试仪检查晶片上的半导体器件，并且包括：第一晶片卡盘16A; 第二晶片卡盘16B; 第一探针卡24A，其具有与由第一晶片卡盘保持的晶片接触的探针; 第二探针卡24B，其具有与由第二晶片卡盘保持的晶片接触的探针; 对准摄像机22; 第一移动机构，其可以将第一晶片卡盘移动到第一探针卡和对准相机下方的位置; 以及第二移动机构，其可以将第二晶片卡盘移动到第二探针卡和对准相机下方的位置。第一和第二移动机构分别独立地移动第一和第二晶片卡盘。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008028082A Prober, and probe contact method 有权
标题翻译： PROBER和PROBE联系方式
公开(公告)号：JP2008028082A
公开(公告)日：2008-02-07
申请号：JP2006197988
申请日：2006-07-20
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： CHIBA KIYOTAKA , MASE FUMIO
IPC分类号： H01L21/66
CPC分类号： G01R31/2865
摘要： PROBLEM TO BE SOLVED: To provide a method of reducing errors in contact position between individual probes and electrodes without lowering throughput when conducting a probing test on a wafer at a high or low temperature.
SOLUTION: The prober is for connecting the individual probes 25 to the individual electrodes of a plurality of devices formed on a wafer W when testing those devices by a tester. The prober comprises a wafer chuck 18, transportation system, temperature adjustment system for the wafer chuck 18, alignment microscope 19 for measuring positional relationship between the electrodes of the wafer and the probes, and movement controller 43 for calculating an amount of movement required for bringing the electrodes into contact with the probes and then controlling the transportation system, based on the measured positional relationship. The prober also includes a wafer temperature sensor for detecting the temperature of the wafer before it is held. The movement controller 43 includes a temperature change data storage wherein data about a temperature change of the wafer W after it is held are stored in advance, and a movement amount correcting means for correcting an amount of movement calculated based on the temperature of the wafer W and a change in temperature of the wafer W estimated from the temperature change data.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种减少各个探针和电极之间的接触位置误差的方法，而不会在高或低温度下在晶片上进行探测试验时降低生产率。解决方案：探测器用于当通过测试仪测试这些设备时，将各个探针25连接到形成在晶片W上的多个器件的各个电极。探针包括晶片卡盘18，输送系统，用于晶片卡盘18的温度调节系统，用于测量晶片的电极与探针之间的位置关系的对准显微镜19，以及用于计算所需的移动量的运动控制器43 电极与探头接触，然后根据测量的位置关系控制运输系统。探测器还包括用于在保持晶片之前检测晶片的温度的晶片温度传感器。运动控制器43包括温度变化数据存储器，其中预先保存有关于晶片W的温度变化的数据，以及移动量校正装置，用于校正基于晶片W的温度计算出的移动量以及根据温度变化数据估计的晶片W的温度变化。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008004675A Wafer chuck of prober 审中-公开
标题翻译：探头阻塞
公开(公告)号：JP2008004675A
公开(公告)日：2008-01-10
申请号：JP2006171296
申请日：2006-06-21
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： CHIBA KIYOTAKA , MASE FUMIO
IPC分类号： H01L21/66 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To control thermal deformation on a surface of a wafer chuck when heating the high temperature wafer, and to secure flatness on the surface of the wafer chuck. SOLUTION: In the wafer chuck 16 of a prober, respective terminals of a semiconductor tester are connected to an electrode of a die through a probe needle for electrically inspecting an operation of the die formed on a wafer. The high temperature wafer chuck 16 incorporates a heater 5, and can inspect the die in a high temperature state. A metal plate 50 constituted of aluminum and stainless, which are metallic materials with high thermal expansion coefficients, is stuck to a base of a ceramic member constituting a main body 4 of the wafer chuck 16. When the heater 5 is operated at high temperature inspection of the wafer, a base side of the main body 4 of the wafer chuck 16 expands by thermal expansion of the metal plate 50, and a difference becomes small between upper and lower expansion degrees in the main body 4 of the wafer chuck 16. Thus, flatness can be secured on the surface of the wafer chuck. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了在加热高温晶片时控制晶片卡盘的表面上的热变形，并且确保晶片卡盘的表面上的平坦度。解决方案：在探测器的晶片卡盘16中，半导体测试器的各个端子通过探针连接到管芯的电极，用于电检查在晶片上形成的管芯的操作。高温晶片卡盘16包括加热器5，并且可以在高温状态下检查模具。将由铝和不锈钢构成的金属板50作为具有高热膨胀系数的金属材料粘贴在构成晶片卡盘16的主体4的陶瓷构件的基座上。当加热器5在高温检查晶片卡盘16的主体4的基底侧通过金属板50的热膨胀而膨胀，并且在晶片卡盘16的主体4中的上下膨胀度之间的差异变小。因此可以在晶片卡盘的表面上确保平坦度。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008053282A Prober 审中-公开
标题翻译： PROBER
公开(公告)号：JP2008053282A
公开(公告)日：2008-03-06
申请号：JP2006225351
申请日：2006-08-22
申请人： Tokyo Seimitsu Co Ltd , 株式会社東京精密
发明人： CHIBA KIYOTAKA , MASE FUMIO
IPC分类号： H01L21/66 , G01R31/26 , G01R31/28 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a prober capable of accurately detecting the places of moving stages on an X-axis and a Y-axis even when the Y-axis and a base are deformed thermally when a wafer chuck is heated/cooled. SOLUTION: The prober has the wafer chuck 16 with a built-in heating/cooling member, an X-axis stage 14 rotating the wafer chuck 16 and conducting movements in the Z-axis and X-axis directions, a Y-axis stage 13 conducting the movement in the Y-axis direction of the wafer chuck 16, and the base 12 moving and supporting the Y-axis stage 13. The prober is calibrated by linear scales 41 and 42 fitted in parallel with the vertical direction apart from the X-axis stage 13 on one side face of the direction that the X-axis stage 14 of the Y-axis stage 13 is moved, and an arm 40 with heads 43 and 44 fitted on the side face of the X-axis stage 14 and opposed to the linear scales 41 and 42, respectively. The prober corrects and detects the value of the linear scale 41 reading the place of the X-axis stage 14 by the reading of the linear scale 42. Such a prober is used. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使当晶片卡盘被加热时Y轴和基座变热时，也可以提供能够精确地检测X轴和Y轴上的移动台的位置的探测器，冷却。解决方案：探针具有带有内置加热/冷却构件的晶片卡盘16，旋转晶片卡盘16的X轴平台14并且在Z轴和X轴方向上进行运动，Y轴 - 轴台13在晶片卡盘16的Y轴方向上进行移动，底座12移动并支撑Y轴台13.探针由与分开的垂直方向平行配置的线性刻度41和42校准从Y轴台13的X轴台14的方向的一个侧面上的X轴台13和安装在X轴的侧面上的头部43,44的臂40 阶段14并且分别与线性标尺41和42相对。探测器通过读取线性刻度42来校正并检测读取X轴级14的位置的线性刻度41的值。使用这样的探测器。版权所有（C）2008，JPO＆INPIT

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