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1. 发明专利

JP2008060265A Removal solution recovery system after removal of protective film and method of collecting removal solution after removal of protective film 有权
标题翻译：拆卸保护膜后拆卸解决方案恢复系统及拆除保护膜后取出拆卸方法
公开(公告)号：JP2008060265A
公开(公告)日：2008-03-13
申请号：JP2006234254
申请日：2006-08-30
申请人： Tokyo Electron Ltd , Tokyo Ohka Kogyo Co Ltd , 東京エレクトロン株式会社 , 東京応化工業株式会社
发明人： HIRANO TOMOYUKI , ZENSEI SATOSHI , OMORI KATSUMI , YOSHIHARA KOSUKE , YAMAMOTO TARO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a removal solution recovery system which can increase a recovery rate of a removal solution after use while avoiding a reduction in the throughput of a protective film removing process. SOLUTION: A removal solution recovery system 6 comprises a recovery tank 61 holding therein a solution containing a recovery solvent R for resolving and collecting a volatile component in a removal solution after being used; a transportation pipe 60 for transporting the volatile component into the recovery tank 61; a bubbling mechanism 63 for resolving the volatile component into the recovery solvent R; a liquid supply mechanism 62 for supplying a liquid containing a new recovery solvent into the recovery tank 61; a liquid discharging mechanism for discharging the liquid containing the recovery solvent R in the recovery tank 61; and a system controller 34 for causing the liquid discharging mechanism to discharge the liquid containing the recovery solvent R and the volatile component dissolved therein in the recovery tank 61, and for causing the liquid supply mechanism 62 to supply the liquid containing the new recovery solvent into the recovery tank 61 at predetermined timing. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种除去溶液回收系统，其可以在使用后提高除去溶液的回收率，同时避免保护膜除去过程的通过量的降低。解决方案：除去溶液回收系统6包括回收罐61，其中含有含有回收溶剂R的溶液，用于在使用后分解和收集去除溶液中的挥发性组分; 用于将挥发性成分输送到回收罐61中的输送管60; 用于将挥发性成分分解成回收溶剂R的鼓泡机构63; 用于将含有新的回收溶剂的液体供应到回收罐61中的液体供给机构62; 用于将包含回收溶剂R的液体排出到回收罐61中的液体排出机构; 以及系统控制器34，用于使液体排出机构将包含回收溶剂R和溶解在其中的挥发性成分的液体排出到回收罐61中，并使液体供给机构62将含有新的回收溶剂的液体供给到回收罐61。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2015050348A 基板処理装置、基板処理方法及び基板処理用記録媒体审中-公开
标题翻译：基板处理器，基板处理方法和用于基板处理的记录介质
公开(公告)号：JP2015050348A
公开(公告)日：2015-03-16
申请号：JP2013181439
申请日：2013-09-02
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： YOSHIHARA KOSUKE , SHIMURA SATORU
IPC分类号： H01L21/027 , G03F7/16 , G03F7/30
摘要：【課題】基板上に形成されるパターンの精度の低下を抑制しつつ、スループットの向上により生産性を高めることができる基板処理装置を提供する。【解決手段】基板処理装置である塗布ユニットU3は、ウェハWを保持して回転させる回転保持部20と、回転保持部20により回転させられているウェハWの表面Waに、レジスト剤を供給する処理液供給部30と、レジスト膜の感度向上用の光を照射する光照射部40と、制御部CUとを備える。制御部CUは成膜制御部として機能し、ウェハWを回転させるように回転保持部20を制御しながら、表面Waにレジスト剤を供給するように処理液供給部30を制御することで、表面Wa上にレジスト剤の膜を形成する。制御部CUは光照射制御部としても機能し、レジスト剤の膜の形成完了前に、レジスト剤に光を照射するように光照射部40を制御する。【選択図】図4
摘要翻译：要解决的问题：提供一种用于通过提高生产率而提高生产率的基板处理器，同时抑制在基板上形成的图案的精度的劣化。解决方案：作为基板处理器的涂布单元U3包括用于保持和旋转的旋转保持单元20 晶片W; 用于向由旋转保持单元20旋转的晶片W的表面Wa供应抗蚀剂的处理液供给单元30; 用于发射光以提高抗蚀剂膜的灵敏度的发光单元40; 和控制单元CU。控制单元CU用作成膜控制单元，并且控制处理流体供应单元30以将抗蚀剂供应到表面Wa，同时控制旋转保持单元20旋转晶片W，使得抗蚀剂的膜为形成在表面Wa上。控制单元CU用作发光控制单元，并且在形成抗蚀剂膜的完成之前，控制发光单元40向抗蚀剂发光。

3. 发明专利

JP2014140030A Liquid processing apparatus, liquid processing method and storage medium for liquid processing 有权
标题翻译：液体加工设备，液体加工方法和液体加工储存介质
公开(公告)号：JP2014140030A
公开(公告)日：2014-07-31
申请号：JP2014000077
申请日：2014-01-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAYANAGI YASUHARU , MINEKAWA YUKIE , YOSHIHARA KOSUKE , TERASHITA YUICHI , KOSHO TOMONOBU , SASA TAKUSHI
IPC分类号： H01L21/027 , B05C11/10 , B05D3/00
CPC分类号： H01L21/67017 , F04B43/0081 , F04B49/065 , F04B2205/503 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To obtain filtration efficiency by a single filter, which is similar to the filtration efficiency when a plurality of filters is provided, and to prevent decrease in throughput.SOLUTION: A liquid processing apparatus is configured in such a manner that: based on a control signal from a control unit 101, a resist liquid L is sucked into a diaphragm pump 70 through a filter 52; a part of the resist liquid sucked in the pump is discharged from a discharge nozzle 7; the remaining resist liquid is returned to a supply conduit 51b on a primary side of the filter; a resist liquid is synthesized by adding a replenishment amount of the resist liquid from a process liquid container 60 to the return amount by driving a supply pump 80; and discharge of the resist liquid and filtration thereof by the filter are carried out.
摘要翻译：要解决的问题：通过单个过滤器获得过滤效率，其与提供多个过滤器时的过滤效率相似，并且防止生产量的降低。解决方案：液体处理设备被配置为：基于来自控制单元101的控制信号，抗蚀剂液体L通过过滤器52被吸入隔膜泵70中; 吸入泵中的抗蚀剂液体的一部分从排出喷嘴7排出; 剩余的抗蚀剂液体返回到过滤器的初级侧的供应管道51b; 通过驱动供给泵80将来自处理液容器60的补充量的抗蚀剂液体添加到返回量来合成抗蚀剂液体; 并且进行抗蚀剂液体的排出以及过滤器的过滤。

4. 发明专利

JP2014082513A Liquid processing apparatus and method 有权
标题翻译：液体加工设备及方法
公开(公告)号：JP2014082513A
公开(公告)日：2014-05-08
申请号：JP2013259068
申请日：2013-12-16
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , ICHINO KATSUNORI , KOSHO TOMONOBU , SASA TAKUSHI , TSUCHIYA KATSUHIRO , TERASHITA YUICHI , TAKEGUCHI HIROSHI
IPC分类号： H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To efficiently prevent an increase in particles contained in a process liquid without wastefully consuming the process liquid.SOLUTION: A liquid processing apparatus comprises: a supply pipeline 51 connecting between a resist container 60 and a process liquid supply nozzle 7; a filter device 52a interposed in the supply pipeline; a pump P interposed in the supply pipeline on a secondary side of the filter device; a circulation pipeline 55 between a secondary side of the pump and a primary side of the filter device; a supply control valve 57 interposed on a secondary side of the pump; an on-off valve V35 provided on a discharge side of the pump, and capable of selectively supplying a process liquid to the circulation pipeline; a switching valve V6 provided, on a primary side of the filter device, in the supply pipeline on a secondary side of a connection between the circulation pipeline and the supply pipeline; and a controller 200 for controlling the pump, the supply control valve, the on-off valve and the switching valve. While the supply control valve, the on-off valve and the switching valve are closed, driving of drive means of the pump allows a pump part to have negative pressure to thereby make fine bubbles existing in the process liquid apparent.
摘要翻译：要解决的问题：为了有效地防止加工液中所含的颗粒的增加，而不浪费处理液体。解决方案：液体处理装置包括：连接抗蚀剂容器60和工艺液体供应喷嘴7的供应管线51; 插入在供给管路中的过滤器装置52a; 泵浦P插入在过滤装置的二次侧的供给管路中; 在泵的次级侧和过滤装置的初级侧之间的循环管线55; 设置在泵的次级侧的供给控制阀57; 设置在泵的排出侧的开关阀V35，能够选择性地向循环管道供给处理液; 切换阀V6，其设置在所述过滤装置的一次侧，在所述供给管路中，在所述循环管道与所述供给管路之间的连接的二次侧; 以及用于控制泵，供给控制阀，开闭阀和切换阀的控制器200。当供给控制阀，开关阀和切换阀关闭时，泵的驱动装置的驱动允许泵部分具有负压，从而使处理液体中存在的微小气泡明显。

5. 发明专利

JP2013162040A Substrate processing device, coating development device with the same, and substrate processing method 有权
标题翻译：基板处理装置，具有该基板处理装置的涂层开发装置以及基板处理方法
公开(公告)号：JP2013162040A
公开(公告)日：2013-08-19
申请号：JP2012024381
申请日：2012-02-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIDA YUICHI , YOSHIHARA KOSUKE , IZEKI TOSHIHIRO
IPC分类号： H01L21/027 , G03F7/30 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To easily exhaust liquid from spacers of a pattern formed on a substrate.SOLUTION: The substrate processing device comprises: a substrate holding section capable of holding a substrate and rotating the substrate with a center of the substrate as a rotation center; a rinse liquid supply section that can move in a direction toward an outer edge from the center of the substrate rotated by the substrate holding section and supply rinse liquid to a surface of the substrate; and a first inactive gas supply section that can move toward the outer edge from the center of the substrate together with the rinse liquid supply section, and supply inactive gas to the surface of the substrate rotated by the substrate holding section from a supply direction inclined from a direction vertical to the surface of the substrate and displaced to a downstream side in a rotation direction of the substrate from a radial direction of the substrate.
摘要翻译：要解决的问题：容易地从形成在基板上的图案的间隔物排出液体。解决方案：基板处理装置包括：基板保持部分，其能够保持基板并且以基板的中心为旋转中心旋转基板 ; 冲洗液供给部，能够从基板保持部旋转的基板的中心朝向外边缘的方向移动，并将冲洗液供给到基板的表面; 以及能够与冲洗液供给部一起从基板的中心朝向外边缘移动的第一非活性气体供给部，并且从从基板保持部旋转的基板的表面，从从与基板的表面垂直的方向，从基板的径向向基板的旋转方向的下游侧移动。

6. 发明专利

JP2013098479A Processing liquid supply method, program, computer storage medium and processing liquid supply apparatus 有权
标题翻译：处理液体供应方法，程序，计算机存储介质和处理液体供应装置
公开(公告)号：JP2013098479A
公开(公告)日：2013-05-20
申请号：JP2011242338
申请日：2011-11-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , KOSHO TOMONOBU
IPC分类号： H01L21/027
CPC分类号： G03F7/0022 , G03F7/16 , Y10T137/794
摘要： PROBLEM TO BE SOLVED: To reduce defects of a substrate by reducing foreign substances in a processing liquid while using a simplified processing liquid supply apparatus.SOLUTION: A resist liquid supply apparatus 100 comprises a resist liquid supply source 101 which stores a resist liquid therein, a supply pipe 102 which supplies the resist liquid from the resist liquid supply source 101 to an application nozzle 32, a kid end tank 103 which is provided in the supply pipe 102 for temporarily storing the resist liquid therein, a pump 104 which is provided in the supply pipe 102 for circulating the resist liquid, a filter 105 which is provided in the supply pipe 102 for capturing foreign substances in the resist liquid and preventing the foreign substances from being released, a trap 106 which is provided in the supply pipe 102 for blocking the circulation of the resist liquid, a valve 107 provided on the supply pipe 102, and a controller 200 which controls the pump 104 in such a manner that the resist liquid circulated inside of the supply pipe 102 at least once reciprocates and pass through the filter 105 and the resist liquid is supplied to the application nozzle 32.
摘要翻译：要解决的问题：通过在使用简化的处理液体供给装置的同时通过减少处理液中的异物来减少基板的缺陷。解决方案：抗蚀剂液体供应装置100包括在其中存储抗蚀剂液体的抗蚀剂液体供应源101，将来自抗蚀剂液体供应源101的抗蚀剂液体供应到施加喷嘴32的供应管102，设置在用于临时存储抗蚀剂液体的供给管102中的罐103，设置在用于使抗蚀剂液体循环的供给管102中的泵104，设置在用于捕获异物的供给管102中的过滤器105 在抗蚀剂液体中并防止异物被释放，设置在供给管102中用于阻止抗蚀剂液体循环的阱106，设置在供给管102上的阀107和控制器200 泵104，使得在供给管102内循环的抗蚀剂液体往复移动并通过过滤器105，并将抗蚀剂液体供给到应用版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012114409A Substrate cleaning method, substrate cleaning apparatus and storage medium for substrate cleaning 审中-公开
标题翻译：基板清洗方法，基板清洗装置和基板清洗存储介质
公开(公告)号：JP2012114409A
公开(公告)日：2012-06-14
申请号：JP2011196376
申请日：2011-09-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ARIMA YUTAKA , YOSHIDA YUICHI , YOSHIHARA KOSUKE
IPC分类号： H01L21/304 , H01L21/027
CPC分类号： G03F7/422 , H01L21/67051
摘要： PROBLEM TO BE SOLVED: To provide a substrate cleaning method which allows for high cleaning effect in a short time even if a substrate coated with a highly water-repellent material is cleaned, and to provide a substrate cleaning apparatus and a storage medium for substrate cleaning.SOLUTION: A liquid film is formed on the entire surface of a wafer by supplying a cleaning liquid R having a temperature higher than the processing atmosphere temperature (23°C) to the center part C of a semiconductor wafer W on which a circuit pattern is formed. The cleaning liquid supply position is then shifted by a predetermined distance from the center part toward the circumference of the wafer, and a dry region D is formed by ejecting a gas G to the center part of the wafer. By shifting the cleaning liquid supply position at a speed substantial equal to the speed at which the dry region spreads to the circumference of the wafer, and scraping out the dissolution products remaining between the circuit patterns of a resist film by the cleaning liquid, surface of the wafer is cleaned.
摘要翻译：要解决的问题：提供一种即使清洗涂覆有高度疏水材料的基材，也能够在短时间内实现高清洗效果的基板清洗方法，并且提供基板清洁装置和存储介质用于基材清洗。解决方案：通过向半导体晶片W的中心部分C提供温度高于加工气氛温度（23℃）的清洗液体R，在晶片的整个表面上形成液膜，其中，形成电路图案。然后将清洗液供给位置从晶片的中心部朝向圆周移动预定距离，通过将气体G喷射到晶片的中心部分而形成干燥区域D. 通过以与干燥区域扩散到晶片周边的速度大致相等的速度移动清洁液供给位置，并且通过清洗液刮除残留在抗蚀剂膜的电路图案之间的溶解产物，晶片被清洁。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012011279A Application method and application device 有权
标题翻译：应用方法和应用设备
公开(公告)号：JP2012011279A
公开(公告)日：2012-01-19
申请号：JP2010148016
申请日：2010-06-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ICHINO KATSUNORI , YOSHIHARA KOSUKE
IPC分类号： B05D1/40 , B05C9/14 , B05C11/08
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of preventing variation of an application film thickness in a substrate surface even when a thin coating film is formed by reducing a supply amount of an application liquid (for example, resist liquid).SOLUTION: In an application method including: an application liquid application step of supplying an application liquid to a central part of a substrate, rotating the substrate, and covering the entire surface of the substrate with the application liquid; and a drying step of rotating the substrate in a state where the supply of the application liquid is stopped after the application liquid coating step and drying the application liquid, the temperature of a specific range in a radial direction of the substrate is locally adjusted from a back surface side of the substrate in the drying step. The adjustment may be performed, for example, by blasting the specific range in the radial direction of the back surface of the substrate with a temperature control fluid by a temperature control nozzle or by irradiating the specific range in the radial direction of the back surface of the substrate with heat rays.
摘要翻译：要解决的问题：即使通过减少施加液体（例如抗蚀剂液体）的供给量形成薄膜也能够提供能够防止基板表面中的涂布膜厚度的变化的技术。解决方案：一种应用方法，包括：施加液施加步骤，将施加液体供应到基板的中心部分，旋转基板，并用施加液覆盖基板的整个表面; 以及干燥步骤，在涂布液涂布步骤停止施加液体的供给并干燥涂布液的状态下旋转基板，将基板的径向的特定范围的温度从在干燥步骤中的基板的背面侧。调整可以例如通过温度控制喷嘴用温度控制流体喷射基板的背面的径向的特定范围，或者通过照射背面的径向的特定范围具有热射线的基板。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011166086A Developing apparatus, developing method, and storage medium 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：JP2011166086A
公开(公告)日：2011-08-25
申请号：JP2010030524
申请日：2010-02-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ARIMA YUTAKA , YOSHIHARA KOSUKE , YOSHIDA YUICHI , TAKIGUCHI YASUSHI , YAMAMOTO TARO
IPC分类号： H01L21/027 , G03F7/30 , H01L21/304
CPC分类号： G03F7/3021
摘要： PROBLEM TO BE SOLVED: To provide a developing apparatus which obtains a high throughput.
SOLUTION: The developing apparatus includes: an airtight processing vessel having a processing atmosphere formed therein; an atmosphere gas supplying unit for supplying mist of a developing liquid into the processing vessel to condense the developing liquid on the surfaces of a substrate transported into the processing vessel and thereby to form a liquid film thereon; and a drying unit for drying the substrate to stop the developing action of the liquid film. Since the reaction between the developing liquid and a resist can be stopped, the developing operation can be carried out concurrently with the cleaning operation of a cleaning module, thus a high throughput is attained.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种获得高产量的显影装置。解决方案：显影装置包括：形成有处理气氛的气密处理容器; 气氛气体供给单元，用于将显影液体的雾供给到处理容器中，以将显影液冷凝在输送到处理容器中的基板的表面上，从而在其上形成液膜; 以及用于干燥基板以停止液膜的显影动作的干燥单元。由于可以停止显影液和抗蚀剂之间的反应，因此可以与清洁模块的清洁操作同时进行显影操作，从而实现高生产率。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2011159997A Coating processing method for substrate 有权
标题翻译：涂层处理方法
公开(公告)号：JP2011159997A
公开(公告)日：2011-08-18
申请号：JP2011094635
申请日：2011-04-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IZEKI TOSHIHIRO , YOSHIHARA KENTARO , NODA TOMOHIRO , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , B05D1/40
摘要： PROBLEM TO BE SOLVED: To provide a coating processing method for a substrate in which a coating liquid is effectively used and a coating liquid film is made uniform.
SOLUTION: In the coating processing method for the substrate in which an antireflective film is formed by coating a surface of the substrate where a resist film is formed with a water-soluble antireflective liquid before the substrate W is exposed to a pattern, the substrate where the resist film is formed is held and rotated at a first rotational frequency, pure water DIW is supplied to a center portion of the substrate to form a liquid pool PD of the pure water, and the antireflective liquid TARC is supplied to the liquid pool of the pure water on the center position of the substrate to be mixed. Then while the antireflective liquid is continuously supplied, the substrate is rotated at a second rotational frequency to diffuse the antireflective liquid, and the antireflective liquid diffused over the entire surface of the substrate is dried at a rotational frequency higher than the first rotational frequency and lower than the second rotational frequency.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种其中有效地使用涂布液并使涂布液膜均匀的基材的涂布处理方法。解决方案：在基板W暴露于图案之前，通过在形成有抗蚀剂膜的基板的表面上涂覆水溶性抗反射液体的基板的涂布处理方法中，形成抗蚀剂膜的基板以第一旋转频率保持并旋转，将纯水DIW供应到基板的中心部分以形成纯水的液池PD，并将抗反射液体TARC供应到液体池中的纯水在待混合的基材的中心位置。然后在连续供给抗反射液体的同时，以第二旋转频率使基板旋转以扩散抗反射液体，并且在基板的整个表面上扩散的抗反射液体以比第一旋转频率高的旋转频率被干燥比第二旋转频率。版权所有（C）2011，JPO＆INPIT

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