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1. 发明专利

JP2011091274A Developing device, developing method and storage medium 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：JP2011091274A
公开(公告)日：2011-05-06
申请号：JP2009244820
申请日：2009-10-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKEGUCHI HIROSHI , IZEKI TOSHIHIRO , YOSHIDA YUICHI , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , G03F7/30
CPC分类号： G03F7/3021
摘要： PROBLEM TO BE SOLVED: To reduce development defects while a developing film is formed over the entire area of a surface of a substrate even when the surface of the substrate has large water repellency.
SOLUTION: Before development processing on a wafer W, pure water as a diffusion assisting liquid for easily spreading a developer over the surface of the wafer W is discharged from a pure water nozzle 40 to a center part of the wafer W to form a liquid reservoir. While the wafer W is rotated at high speed, a developer for prewetting is discharged to the center part of the wafer W to be spread. Resist is dissolved in the developer and a melt 6 is eluted, but while the melt 6 is eluted, for example, within 7 seconds, the water W is reversed to spread the melt 6 over the entire surface of the wafer W, thereby lowering the water repellency of the wafer W. A developer is discharged thereafter to the rotating wafer W and spread over the surface of the wafer W.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：即使当基板的表面具有大的拒水性时，为了减少在基板表面的整个区域上形成显影膜的显影缺陷。解决方案：在晶片W上的显影处理之前，作为用于容易地将显影剂扩散到晶片W的表面上的扩散辅助液体的纯净水从纯水喷嘴40排出到晶片W的中心部分，以形成液体储存器当晶片W高速旋转时，用于预润湿的显影剂被排放到待扩散的晶片W的中心部分。抗蚀剂溶解在显影剂中并且熔体6被洗脱，但是当熔体6例如在7秒钟内被洗脱时，水W被反转以将熔体6扩散到晶片W的整个表面上，从而降低晶片W的拒水性。然后，显影剂向晶片W的表面散布到旋转晶片W上。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009158767A Rotary coating device 审中-公开
标题翻译：旋转涂层设备
公开(公告)号：JP2009158767A
公开(公告)日：2009-07-16
申请号：JP2007336389
申请日：2007-12-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAYANAGI KOJI , IZEKI TOSHIHIRO , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , B05C11/08
摘要： PROBLEM TO BE SOLVED: To provide a rotary coating device capable of improving throughput.
SOLUTION: The rotary coating device comprises a substrate holding unit 1 which holds a substrate W and can rotate together with the substrate W, a storage body 2 which encloses the substrate W held by the substrate holding unit 1 to store the substrate W, a cover body 3 provided above the storage body 2 and having an opening 3a having a smaller diameter than the substrate W at its center part, and a plurality of cylindrical air current guide paths 4 disposed between the cover body 3 and storage body 2 and linking the inside and the outside of the storage body 2 through above an outer peripheral part Wa of the substrate W stored in the storage body 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高生产率的旋转涂布装置。解决方案：旋转涂布装置包括：基板保持单元1，其保持基板W并且可以与基板W一起旋转;存储体2，其包围由基板保持单元1保持的基板W，以存储基板W 盖体3，其设置在储存体2的上方，具有比其中心部的基板W小的直径的开口3a，以及设置在盖体3与收纳体2之间的多个圆筒状的气流导向路径4，通过存储在存储体2中的基板W的外周部Wa上方将存储体2的内部和外部连接。（C）2009，JPO＆INPIT

3. 发明专利

JP2009078250A Coating treatment method, coating treatment device, and memory medium readable by computer 有权
标题翻译：涂层处理方法，涂层处理装置以及可由计算机读取的记忆介质
公开(公告)号：JP2009078250A
公开(公告)日：2009-04-16
申请号：JP2007251056
申请日：2007-09-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , IZEKI TOSHIHIRO , TAKAYANAGI KOJI
IPC分类号： B05D1/40 , B05C11/08 , B05D3/00 , H01L21/027
CPC分类号： G03F7/162
摘要： PROBLEM TO BE SOLVED: To uniformly coat the inside of a substrate face with a resist liquid while reducing the coating amount of the resist liquid in the case the wafer is coated with the resist liquid using a spin coating process. SOLUTION: In the coating stage S3 of a resist liquid, the rotation of a wafer W whose velocity has been the first velocity V1 before start is gradually accelerated in such a manner that the velocity continuously varies after the start, and, upon its completion, the acceleration degree of the rotation of the wafer W is gradually reduced, and the rotation of the wafer W is converged to the second velocity V2 higher than the first velocity V1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在使用旋涂工艺涂覆抗蚀剂液体的情况下减少抗蚀剂液体的涂布量，同时用抗蚀剂液体均匀地涂覆基板表面。解决方案：在抗蚀剂液体的涂覆阶段S3中，速度已经开始之前的第一速度V1的晶片W的旋转逐渐加速，使得速度在启动之后连续变化，并且在其完成时，晶片W的旋转的加速度逐渐降低，并且晶片W的旋转会聚到比第一速度V1高的第二速度V2。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008071960A Coating processing method 有权
标题翻译：涂料加工方法
公开(公告)号：JP2008071960A
公开(公告)日：2008-03-27
申请号：JP2006249733
申请日：2006-09-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , IZEKI TOSHIHIRO
IPC分类号： H01L21/027 , B05D1/40 , G03F7/16
CPC分类号： H01L21/6715 , G03F7/162
摘要： PROBLEM TO BE SOLVED: To cut down resist solution consumption and achieve high in-plane uniformity in the film thickness of a resist film when a resist solution is applied through spin coating. SOLUTION: A solvent S is supplied to the surface of a wafer W while the wafer W is rotated. Then, the rotation of the wafer W is accelerated until a first rotation speed is reached. During the accelerated rotation and rotation at the first rotation speed, a resist solution R is discharged to the center of the wafer W. Then, after the rotation of the wafer W is decelerated until a second rotation speed is reached, the resist solution R is discharged to the wafer W. Afterwards, the rotation speed of the wafer is increased to a third rotation speed higher than the second rotation speed and the wafer W is rotated at the third rotation speed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：当通过旋涂施加抗蚀剂溶液时，降低抗蚀剂溶液消耗并获得抗蚀剂膜的膜厚度的高的面内均匀性。解决方案：当晶片W旋转时，将溶剂S供给到晶片W的表面。然后，加速晶片W的旋转直到达到第一转速。在第一转速的加速旋转和旋转期间，将抗蚀剂溶液R排出到晶片W的中心。然后，在晶片W的旋转减速直到达到第二转速之后，抗蚀剂溶液R为放电到晶片W.然后，晶片的转速增加到高于第二转速的第三转速，并且晶片W以第三转速旋转。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2004261801A Device and method for curing and device for forming application film 有权
公开(公告)号：JP2004261801A
公开(公告)日：2004-09-24
申请号：JP2004035406
申请日：2004-02-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAGASHIMA SHINJI , IZEKI TOSHIHIRO
IPC分类号： B05D3/06 , B05C9/12 , B05C9/14 , B05C13/02 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a technique to reduce the temperature for curing in a cure unit in which a substrate on which application liquid is applied such as a wafer is heated and an application film on the wafer is cured.
SOLUTION: In the above cure unit(a cure unit 3), the wafer W on which the application liquid is applied is put on a heat plate 32 in a first processing chamber S1 and bake processing is conducted by heating the wafer at a first temperature. In the state where the above wafer is put on the heat plate 32, the application film on the wafer is cured by heating the wafer on the heat plate 32 at a higher temperature of curing process than the first temperature, irradiating ultraviolet rays toward the wafer.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2010177504A Wafer coating method and apparatus 有权
标题翻译： WAFER COATING METHOD AND APPARATUS
公开(公告)号：JP2010177504A
公开(公告)日：2010-08-12
申请号：JP2009019460
申请日：2009-01-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IZEKI TOSHIHIRO , YOSHIHARA KENTARO , NODA TOMOHIRO , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , B05C11/08 , G03F7/16
摘要： PROBLEM TO BE SOLVED: To provide a wafer coating method and apparatus for achieving the effective utilization of a coating liquid and the uniformity of a coating liquid film. SOLUTION: The wafer coating method includes the steps of: forming a liquid pool of demineralized water DIW by rotating a semiconductor wafer W at a first rotational frequency of low speed and supplying the demineralized water DIW to a center section of the semiconductor wafer W; and then mixing water-soluble coating liquid TARC with the mineralized water DIW by supplying the water-soluble coating liquid TARC to the center section of the semiconductor wafer W while the semiconductor wafer W is rotated at the first rotational frequency. Then, the coating liquid film is formed by rotating the semiconductor wafer W at a second rotational frequency higher than the first rotational frequency. A discharge quantity of the coating liquid TARC is set up by controlling a time ratio between the step of mixing the coating liquid with the demineralized water and the step of forming the coating liquid film to be within a range of 1:3 to 3:1. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于实现涂布液的有效利用和涂布液膜的均匀性的晶片涂布方法和装置。晶片涂布方法包括以下步骤：通过以低速的第一旋转频率旋转半导体晶片W来形成软化水DIW的液体池，并将去矿质水DIW供应到半导体晶片的中心部分瓦; 然后通过在半导体晶片W以第一旋转频率旋转的同时将水溶性涂布液TARC供给到半导体晶片W的中心部分，将水溶性涂布液TARC与矿化水DIW混合。然后，通过以比第一旋转频率高的第二旋转频率旋转半导体晶片W来形成涂布液膜。涂布液TARC的排出量通过控制涂布液与软化水的混合工序与涂布液膜的形成步骤之间的时间比在1：3〜3：1的范围内来设定。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009187996A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009187996A
公开(公告)日：2009-08-20
申请号：JP2008023495
申请日：2008-02-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IZEKI TOSHIHIRO , YOSHIHARA KOSUKE , TAKAYANAGI KOJI
IPC分类号： H01L21/304 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for cleaning a processing liquid adhering on a container with high cleaning effect and high efficiency in executing cleaning.
SOLUTION: A resist applying apparatus includes a cleaning tool 20 sucked and held on a spin chuck; a container surrounding the spin chuck and the cleaning tool 20; and a cleaning liquid jetting nozzle for jetting the cleaning liquid onto the rear surface of the cleaning tool 20. The cleaning tool 20 includes a body 50 having a flat front surface. On the outer circumference of the body 50, a protruding portion 51 protruding outward is formed and the body 50 and the protruding portion 51 are integrally formed. The protruding portion 51 is bent outward so as to continue from a front surface 50a and a rear surface 50b of the body 50. The position of the top T of the protruding portion 51 continuously changes in a thickness direction of the cleaning tool 20 along the outer periphery of the cleaning tool 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题：提供一种用于清洁附着在具有高清洁效果的容器上的处理液体并且执行清洁的高效率的基板处理装置。解决方案：抗蚀剂涂敷装置包括吸附并保持在旋转卡盘上的清洁工具20; 围绕旋转卡盘和清洁工具20的容器; 以及用于将清洁液体喷射到清洁工具20的后表面上的清洁液体喷射喷嘴。清洁工具20包括具有平坦前表面的主体50。在本体50的外周上形成有向外突出的突出部51，并且主体50和突出部51一体形成。突出部51向外弯曲，以从主体50的前表面50a和后表面50b继续。突出部分51的顶部T的位置沿着清洁工具20的厚度方向沿着清洁工具20的外周。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006332185A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2006332185A
公开(公告)日：2006-12-07
申请号：JP2005151030
申请日：2005-05-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHII TAKAYUKI , IZEKI TOSHIHIRO
IPC分类号： H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which cleans the periphery of a substrate in high accuracy when applying a processing liquid onto the surface of the substrate in order to form a circuit pattern, and also to provide a substrate processing method.
SOLUTION: The substrate processing apparatus is provided with substrate turning means (52 and 54) which hold and rotate a substrate W applied with a processing liquid, a rinse liquid supply source 26 to supply a rinse liquid for dissolving the processing liquid, a cleaning nozzle 2 to hold the film of the rinse liquid supplied from the rinse liquid supply source 26, and a control means (9) to control the operation of the substrate turning means (52 and 54) and the cleaning nozzle. The control means (9) turns the substrate W by using the substrate turning means (52 and 54), and it moves the cleaning nozzle 2 in a manner that the film of the rinse liquid is in contact with the periphery of the substrate W, so as to remove a processing liquid adhering to the periphery.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了形成电路图案，提供一种在将基板的表面上施加处理液以高精度地清洗基板周边的基板处理装置，并且提供基板处理方法。解决方案：基板处理装置设置有基板转动装置（52和54），其保持并旋转施加有处理液体的基板W，冲洗液体供给源26以提供用于溶解处理液体的冲洗液体，用于保持从冲洗液供给源26供给的冲洗液的膜的清洗喷嘴2以及控制基板转动装置（52,54）和清洗喷嘴的动作的控制装置（9）。控制装置（9）通过使用基板转动装置（52和54）转动基板W，并且以冲洗液体的膜与基板W的周边接触的方式移动清洁喷嘴2，以除去附着在周边的处理液。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006093409A Coater and method for coating treatment 有权
标题翻译：涂层和涂层处理方法
公开(公告)号：JP2006093409A
公开(公告)日：2006-04-06
申请号：JP2004277111
申请日：2004-09-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUKUDA YOSHITERU , IZEKI TOSHIHIRO , ISHII TAKAYUKI
IPC分类号： H01L21/027 , B05C11/08 , B05C11/10 , B05D3/00
CPC分类号： H01L21/67184 , H01L21/6708 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To carry out a series of resist coating treatment including edge rinse in a short time.
SOLUTION: A resist coater 20 is provided with a plurality of solvent supply nozzles S
1 to S
4 supplying solvents having different dissolution parameters. A specific solvent supply nozzle is selected for an edge rinse process so that the selected nozzle discharges a removing solvent having a dissolution parameter gap larger than a preset value against a coating solvent contained in a resist liquid. In resist coating treatment, a resist liquid is delivered from a resist liquid supply nozzle to the center of a spinning wafer W, and a film of the resist liquid having a given thickness is formed. Subsequently, the edge rinse process starts as the resist liquid on the wafer W has not dried up yet, and a nozzle selected out of the solvent supply nozzles S1 to S4 supplies the removing solvent to the periphery of the wafer W. At this time, the supplied removing solvent is not mixed with the resist liquid remaining on the wafer W, thus removing only the resist liquid on the periphery in a proper manner.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在短时间内进行一系列抗蚀涂层处理，包括边缘冲洗。解决方案：抗蚀剂涂布机20具有供给具有不同溶解参数的溶剂的多个溶剂供应喷嘴S 1 。选择特定的溶剂供应喷嘴用于边缘漂洗过程，使得所选择的喷嘴相对于抗蚀剂液体中包含的涂布溶剂排出具有大于预设值的溶解参数间隙的去除溶剂。在抗蚀剂涂布处理中，将抗蚀剂液体从抗蚀剂液体供给喷嘴输送到旋转晶片W的中心，形成具有给定厚度的抗蚀剂液体的膜。随后，边缘漂洗处理从晶片W上的抗蚀剂液体尚未干燥开始，从溶剂供给喷嘴S1〜S4中选出的喷嘴将去除溶剂供给到晶片W的周围。此时，所供给的除去溶剂不与保留在晶片W上的抗蚀剂液体混合，从而以适当的方式仅去除外围的抗蚀剂液体。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2010207788A Resist applying method 有权
标题翻译：电阻应用方法
公开(公告)号：JP2010207788A
公开(公告)日：2010-09-24
申请号：JP2009060241
申请日：2009-03-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IZEKI TOSHIHIRO , YOSHIHARA KOSUKE , TAKAYANAGI YASUHARU
IPC分类号： B05D7/24 , B05D1/40 , G03F7/16 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist applying method capable of efficiently applying resist liquid on the entire wafer surface with a smaller supply amount, and decreasing the consumption of the resist liquid. SOLUTION: The resist applying method includes: a solvent supply process S0 of supplying a solvent on the rough center of a wafer which is made to almost stand still; a first process S1 of rotating the wafer at a first rotating speed V1 while supplying the resist liquid onto the solvent on the rough center of the wafer after the solvent supply process S0; a second process S2 of rotating the wafer at a second rotating speed V2 lower than the first rotating speed V1 after the first process S1; and a third process S3 of rotating the wafer at a third rotating speed V3 lower than the first rotating speed V1 and higher than the second rotating speed V2 after the second process S2. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种抗蚀剂涂敷方法，其能够以更小的供给量在晶片表面整体上有效地施加抗蚀剂液体，并且降低抗蚀剂液体的消耗。抗蚀剂施加方法包括：溶剂供给工序S0，其供给在几乎静止的晶片的粗糙中心上的溶剂; 在溶剂供给处理S0之后，以第一转速V1旋转晶片的第一工序S1，同时将抗蚀剂液体供给在晶片的粗糙中心上的溶剂上; 在第一处理S1之后使晶片以比第一转速V1低的第二转速V2旋转的第二工序S2; 以及在第二处理S2之后以比第一转速V1低且高于第二转速V2的第三转速V3旋转晶片的第三处理S3。版权所有（C）2010，JPO＆INPIT

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