会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Pattern forming method
    • 图案形成方法
    • JP2014062990A
    • 2014-04-10
    • JP2012207413
    • 2012-09-20
    • Tokyo Electron Ltd東京エレクトロン株式会社Tokyo Ohka Kogyo Co Ltd東京応化工業株式会社
    • MURAMATSU MAKOTOKITANO TAKAHIROTOMITA TADATOSHITAUCHI HIROSHIMOTOIKE NAOTONAMITO TOSHIAKIOMORI KATSUMI
    • G03F7/40C08F297/00G03F7/039G03F7/11H01L21/027
    • PROBLEM TO BE SOLVED: To provide a pattern forming method by which a fine pattern with small roughness can be formed.SOLUTION: The pattern forming method includes steps of: forming a resist film by applying a resist composition on a process target body; patterning the resist film by exposure and development; forming a surface modified region on the process target body by using the patterned resist film; removing the patterned resist film; applying a block copolymer containing a first polymer and a second polymer on the process target body; subjecting the block copolymer to phase separation; and removing one of the first polymer and the second polymer of the phase-separated block copolymer. The resist composition comprises: a resin component having a structural unit which shows increase in the polarity by an action of an acid and includes an acid decomposable group having a monocyclic or linear hydrocarbon group; and an acid generator component which generates an acid by exposure.
    • 要解决的问题:提供可以形成粗糙度小的精细图案的图案形成方法。解决方案:图案形成方法包括以下步骤:通过将抗蚀剂组合物涂覆在加工对象体上而形成抗蚀剂膜; 通过曝光和显影图案化抗蚀剂膜; 通过使用图案化的抗蚀剂膜在工艺目标体上形成表面改性区域; 去除图案化的抗蚀剂膜; 将含有第一聚合物和第二聚合物的嵌段共聚物施加到所述工艺靶体上; 对嵌段共聚物进行相分离; 并除去相分离的嵌段共聚物的第一聚合物和第二聚合物之一。 抗蚀剂组合物包括:具有结构单元的树脂组分,其通过酸的作用显示极性增加,并且包括具有单环或直链烃基的酸可分解基团; 以及通过曝光产生酸的酸发生剂组分。
    • 6. 发明专利
    • Application processing device, application processing method, program, and computer storage medium
    • 应用处理设备,应用处理方法,程序和计算机存储介质
    • JP2013098371A
    • 2013-05-20
    • JP2011240075
    • 2011-11-01
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • ISHII TAKAYUKISAKAMOTO TAKAHIROKITANO TAKAHIRO
    • H01L21/027B05C5/02B05C11/10B05D1/26
    • H01L21/6715B05D1/005
    • PROBLEM TO BE SOLVED: To efficiently and uniformly apply a high-viscosity coating liquid onto a substrate.SOLUTION: An application nozzle 33 of a resist applying device 1 includes: a body portion 60 in which a storage chamber 62 for storing a resist liquid R is formed; a slit-like discharge port 61 which is formed in a lower surface of the body portion 60 and forms a resist liquid reservoir at a front end thereof due to surface tension of the resist liquid R; and a resist liquid channel 63 communicating with the storage chamber 62 and the discharge port 61. The resist applying device 1 includes a moving mechanism for moving the applying nozzle 33 and a wafer relatively in a vertical direction and a horizontal direction and a pressure adjusting mechanism 71 for adjusting a pressure in the storage chamber. The pressure adjusting mechanism 71 adjusts the pressure in the storage chamber 62 and keeps the pressure negative so that a discharge of the resist liquid R from the discharge port 61 is fixed while the applying nozzle 33 and the wafer are relatively moved to apply the resist liquid R to the wafer.
    • 要解决的问题:为了高效均匀地将高粘度涂布液施加到基板上。 抗蚀剂涂敷装置1的涂布用喷嘴33包括:主体部60,形成有用于存储抗蚀剂液体R的储藏室62; 形成在主体部分60的下表面中并由于抗蚀剂液体R的表面张力而在其前端形成抗蚀液储存器的狭缝状排出口61; 以及与储存室62和排出口61连通的抗蚀剂液体通道63.抗蚀剂涂敷装置1包括用于在垂直方向和水平方向上相对移动施加喷嘴33和晶片的移动机构和压力调节机构 71,用于调节储存室中的压力。 压力调节机构71调节储存室62中的压力并保持压力负值,使得在施加喷嘴33和晶片相对移动的同时从排出口61排出抗蚀剂液体R以施加抗蚀剂液体 R到晶圆。 版权所有(C)2013,JPO&INPIT
    • 7. 发明专利
    • Deposition equipment, deposition method and recording medium
    • 沉积设备,沉积方法和记录介质
    • JP2013084686A
    • 2013-05-09
    • JP2011222225
    • 2011-10-06
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • TERADA SHOICHIHIROSHIRO KOKICHINISHI TAKANORIKITANO TAKAHIRO
    • H01L21/027B29C59/02
    • B29C33/58B29C33/56B29C59/02
    • PROBLEM TO BE SOLVED: To provide a technique for, when supplying a deposition gas to a transfer pattern formation region on a surface of a template to form a releasing film, preventing the releasing film from being formed on a side face and a back face of the template.SOLUTION: Deposition equipment includes: a deposition gas supply unit for locally supplying a deposition gas to a transfer pattern formation region to form a releasing film; a purge fluid supply unit for supplying a purge fluid to an outside region formed around the transfer pattern formation region so as to be along an outer periphery of the transfer pattern formation region; and an exhaust unit for exhausting the inside of a region, to which the purge fluid is supplied, in the outside region so as to be along the outer periphery of the transfer pattern formation region, to remove the purge fluid traveling toward the transfer pattern formation region in the outside region and the excessive deposition gas traveling from the transfer pattern formation region toward a side face of a template. This structure prevents the gas from entering the side face.
    • 要解决的问题:为了提供一种技术,当向模板表面上的转印图案形成区域供应沉积气体以形成脱模膜时,防止在侧面上形成剥离膜,并且 模板的背面。 沉积设备包括:沉积气体供应单元,用于将沉积气体局部供应到转印图案形成区域以形成释放膜; 吹扫流体供给单元,用于将清洗流体供给到形成在转印图案形成区域周围的外部区域,以沿着转印图案形成区域的外周; 以及排气单元,用于沿着沿着转印图案形成区域的外周排出向外部区域供给吹扫流体的区域的内部,以去除朝向转印图案形成行进的净化流体 区域和从转印图案形成区域向模板的侧面行进的过多的沉积气体。 这种结构防止气体进入侧面。 版权所有(C)2013,JPO&INPIT
    • 8. 发明专利
    • Substrate processing method, program, computer storage medium, substrate processing apparatus and imprint system
    • 基板处理方法,程序,计算机存储介质,基板处理设备和印刷系统
    • JP2012227318A
    • 2012-11-15
    • JP2011092765
    • 2011-04-19
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • HIROSHIRO KOKICHINISHI TAKANORITERADA SHOICHIKITANO TAKAHIRO
    • H01L21/027B05C9/12B05C11/08B29C39/10B29C59/02
    • PROBLEM TO BE SOLVED: To effectively form a coating film on a substrate to improve throughput of substrate processing.SOLUTION: In a wafer processing apparatus, ultraviolet light is radiated on a surface Wof a wafer W to clean the surface W(FIG. 18(a)); subsequently, an adherence agent B is coated on the whole area of the surface Wof the wafer W (FIG. 18(b)); the adherence agent B is burned (FIG. 18(c)); subsequently, the adherence agent B is rinsed and an adhesion film Bis deposited on the wafer W (FIG. 18(d)); subsequently, a resist solution R having a photoinitiator is coated on the adhesion film Bof the wafer W (FIG. 18(e)); subsequently, ultraviolet of a predetermined amount of light is radiated on the resist solution R on the wafer W to make the resist solution R be in a semi-cured state such that the resist solution R does not spread and cohere on the wafer W; and a semi-cured resist film Ris deposited on the wafer (FIG. 18(f)).
    • 要解决的问题:为了有效地在基板上形成涂膜以提高基板处理的生产率。 解决方案:在晶片处理设备中,将紫外光照射在晶片W的表面W 1 上以清洁表面W 1 (图18(a)); 随后,在晶片W的表面W 1 的整个区域上涂覆粘附剂B(图18(b)); 粘附剂B燃烧(图18(c)); 随后,漂洗粘附剂B,并且在晶片W上沉积粘附膜B(SB(18))以形成粘合膜(图18(d))。 随后,将具有光引发剂的抗蚀剂溶液R涂覆在晶片W的粘合膜B F 上(图18(e)); 随后,将预定量的光的紫外线照射在晶片W上的抗蚀剂溶液R上,以使抗蚀剂溶液R处于半固化状态,使得抗蚀剂溶液R不会在晶片W上扩散和粘结; 并将半固化的抗蚀剂膜R F 沉积在晶片上(图18(f))。 版权所有(C)2013,JPO&INPIT
    • 9. 发明专利
    • Electrode manufacturing device, electrode manufacturing method, program, and computer storage medium
    • 电极制造装置,电极制造方法,程序和计算机存储介质
    • JP2012146850A
    • 2012-08-02
    • JP2011004733
    • 2011-01-13
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • FUKUOKA TETSUOTERADA KAZUOKITANO TAKAHIRO
    • H01G11/00H01G11/06H01G11/22H01G11/84H01G11/86H01G13/00H01M4/04H01M4/139
    • Y02E60/13
    • PROBLEM TO BE SOLVED: To appropriately and efficiently form an active material layer on a surface of a belt-like substrate when manufacturing an electrode.SOLUTION: An electrode manufacturing device comprises an unwind roll 10 unwinding a belt-like metal foil M, a coating part 11 coating an active material compound on both sides of the metal foil M, a dehydration part 12 dehydrating the active material compound coated on the metal foil M to form an active material layer, and a wind roll 13 winding the metal foil M. The dehydration part 12 is arranged in line in a length direction of the metal foil M and includes a plurality of LEDs 30 emitting infrared rays. The dehydration part 12 is divided into a plurality of regions Ta, Tb, Tc. A peak emission wavelength of the LED 30 in one of the regions Ta, Tb, Tc is set, with respect to a film thickness of water in the active material compound in the one of the regions Ta, Tb, Tc, at a wavelength of the infrared ray within a range in which the active material compound does not boil and at a wavelength in which an infrared ray absorption ratio of water becomes maximum.
    • 要解决的问题:在制造电极时,在带状基板的表面上适当且有效地形成活性物质层。 解决方案:电极制造装置包括展开带状金属箔M的展开辊10,在金属箔M的两侧涂覆活性物质化合物的涂布部11,使活性物质化合物脱水的脱水部12 涂覆在金属箔M上以形成活性物质层,以及缠绕金属箔M的卷绕辊13.脱水部分12在金属箔M的长度方向上成直线排列,并且包括发射红外线的多个LED 30 射线。 脱水部12被分割为多个区域Ta,Tb,Tc。 在区域Ta,Tb,Tc中的一个区域中的LED 30的峰值发射波长相对于区域Ta,Tb,Tc中的一个区域中的活性物质化合物中的水的膜厚设定为波长 活性物质化合物不沸腾的范围内的红外线和水的红外线吸收倍数变得最大的波长。 版权所有(C)2012,JPO&INPIT