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    • 1. 发明专利
    • Substrate heat treatment apparatus
    • 基材热处理设备
    • JP2010232415A
    • 2010-10-14
    • JP2009078160
    • 2009-03-27
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • TAKAGI YASUHIROKAWAMICHI TATSUYAFUKUDA YOSHITERU
    • H01L21/027
    • PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus facilitating the connection of a suction pipe with a heat treatment plate, maintaining heat uniformity within the surface of the heat treatment plate, and improving maintainability such as the inspection and exchange of the heat treatment plate. SOLUTION: This substrate heat treatment apparatus is equipped with: a heat plate 70 where a semiconductor wafer W is placed and heat-treated; a plurality of suction openings 76 formed on the wafer mounting surface of the heat plate 70 to suck the wafer; and a suction pipe 78 that connects each suction opening 76 and a suction means. At one end of the suction pipe 78, a connecting member 77 made of thermally insulated and flexible synthetic rubber is equipped. Then, the connecting member 77 is closely attached to the lower surface of the heat plate 70, and the suction opening 76 and the suction pipe 78 are connected airtightly. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种便于吸引​​管与热处理板连接的基板热处理装置,保持热处理板表面内的热均匀性,提高可维护性,例如检查和更换 热处理板。 解决方案:该基板热处理装置配备有:放置半导体晶片W并进行热处理的加热板70; 形成在加热板70的晶片安装表面上的多个吸入口76,以吸收晶片; 以及连接每个吸入口76和抽吸装置的吸入管78。 在吸入管78的一端设有由绝热柔性合成橡胶制成的连接部件77。 然后,连接构件77紧密地附接到加热板70的下表面,并且吸入开口76和吸入管78气密地连接。 版权所有(C)2011,JPO&INPIT