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    • 1. 发明公开
    • METAL FLUORIDE SINGLE CRYSTAL PULLING APPARATUS AND PROCESS FOR PRODUCING METAL FLUORIDE SINGLE CRYSTAL WITH THE APPARATUS
    • 设备绘制金属氟化物单晶和工艺用于生产金属氟化物单晶与设备
    • EP1849893A1
    • 2007-10-31
    • EP05816637.2
    • 2005-12-16
    • TOKUYAMA CORPORATION
    • NAWATA, TeruhikoYASUMURA, KenYANAGI, HiroyukiNISHIJIMA, Eiichi
    • C30B15/12C30B29/12
    • C30B15/02C30B15/12C30B29/12
    • A metal fluoride single crystal pulling apparatus that upward pulling initiation through termination, in the state of shallow melt capable of highly effective inhibition of scatterer formation, can perform stable growth of single crystal and can suppress any mixing of air bubbles and occurrence of crystal break during crystal growth, etc; and a process for producing a metal fluoride single crystal therewith. As a crucible for accommodating a melt of raw metal fluoride, use is made of a double structured crucible composed of an outer crucible and an inner crucible. In the upward pulling of single crystal, the accommodation depth of inner crucible relative to the outer crucible is increased in accordance with any decrease of melt accommodated in the inner crucible according to the growth of single crystal, so that the melt accommodated in the outer crucible is fed into the inner crucible to thereby maintain the amount of melt accommodated in the inner crucible within a given range. Further, at the position of an opening that upward opens any gap space between an external surface of outer crucible and an internal surface of inner crucible, or an interstice, situated below the opening, between a side wall internal surface of outer crucible and a side wall external surface of inner crucible, there is disposed a cutoff member that cuts off at least part of the position.
    • 金属氟化物单晶提拉装置也向上通过终止拉起始,在能够高度有效的抑制的散射体形成的浅熔体的状态下,可以执行单晶的稳定生长和期间,能够抑制气泡和晶体的断线发生的任何混合 晶体生长,等; 和用于与制造金属氟化物单晶存在的方法。 作为用于容纳的原料金属氟化物的熔体的坩埚中,使用了在外坩埚和内坩埚构成的双重结构的坩埚。 在向上提拉单晶的,内坩埚相对于所述外坩埚的容纳深度增加在雅舞蹈与容纳在坩埚内雅丁单晶的生长熔体的任何降低,所以DASS模头熔融容纳在外坩埚 被馈送到内坩埚,从而保持熔融的容纳在所述内坩埚的给定范围内的量。 另外,在开口的位置的确向上打开以外坩埚的外表面之间的内坩埚的内表面的任何间隙的空间,或在空隙,位于开口部的下方,外坩埚的侧壁内表面和一个侧之间 内坩埚的壁的外表面,有一个截止设置构件确实切断位置的至少一部分。
    • 6. 发明公开
    • PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL
    • VERFAHREN ZUR HERSTELLUNG EINES GRUPPE-III-NITRID-KRISTALLS
    • EP2141267A1
    • 2010-01-06
    • EP08721312.0
    • 2008-02-27
    • National University Corporation Tokyo University of Agriculture and TechnologyTokuyama Corporation
    • KOUKITU, AkinoriKUMAGAI, YoshinaoNAGASHIMA, ToruTAKADA, KazuyaYANAGI, Hiroyuki
    • C30B29/38C30B25/10
    • C30B29/403C30B25/10C30B25/18
    • There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.
      To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000°C or more and less than 1,200°C to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200°C or higher.
    • 提供了一种能够通过仅使用廉价的原材料用于降低生产成本的HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法,并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。 为了通过HVPE制造III族氮化物晶体,包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触,在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤 具有氮原子的情况下,在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体,形成中间层,然后加入III族氮化物 通过在1200℃以上的温度下加热的基板上的中间层上的气相生长进一步生长晶体。