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1. 发明申请

US20080315349A1 Method for Manufacturing Bonded Wafer and Bonded Wafer 审中-公开
标题翻译：制造粘结晶片和粘结晶片的方法
公开(公告)号：US20080315349A1
公开(公告)日：2008-12-25
申请号：US11883816
申请日：2005-11-02
申请人： Tokio Takei , Sigeyuki Yoshizawa , Susumu Miyazaki , Isao Yokokawa , Nobuhiko Noto
发明人： Tokio Takei , Sigeyuki Yoshizawa , Susumu Miyazaki , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/762 , H01L27/12
CPC分类号： H01L21/6708 , H01L21/187 , H01L21/2007 , H01L21/31111
摘要： The present invention provides a method for manufacturing a bonded wafer prepared by bonding a base wafer and a bond wafer, comprising at least a step of etching an oxide film in a terrace region in an outer periphery of the bonded wafer wherein the oxide film in the terrace region is etched by spin-etching with holding and spinning the bonded wafer. Thereby, there is provided a method for manufacturing a bonded wafer in which an oxide film formed in a terrace region of a base wafer is efficiently etched without removing an oxide film on the back surface of the base wafer.
摘要翻译：本发明提供一种制造通过粘接基底晶片和接合晶片制备的接合晶片的方法，该方法至少包括在接合晶片的外周中的平台区域中蚀刻氧化物膜的步骤，其中，通过旋转蚀刻蚀刻露台区域，保持和旋转接合的晶片。因此，提供了一种用于制造接合晶片的方法，其中，在基片的背面没有去除氧化膜的情况下，有效地蚀刻形成在基底晶片的平台区域中的氧化膜。

2. 发明申请

US20140097523A1 METHOD FOR MANUFACTURING BONDED WAFER AND BONDED SOI WAFER 有权
标题翻译：用于制造粘结波和粘结SOI波形的方法
公开(公告)号：US20140097523A1
公开(公告)日：2014-04-10
申请号：US14114959
申请日：2012-04-25
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/762 , H01L29/02 , H01L21/265
CPC分类号： H01L29/02 , H01L21/265 , H01L21/26586 , H01L21/68764 , H01L21/68771 , H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation.
摘要翻译：制造接合晶片的方法包括：使用间歇型离子注入机的离子注入步骤; 键合步骤，将接合晶片的离子注入表面直接或通过绝缘膜粘合到基底晶片的表面; 以及在离子注入层分层接合晶片的分层步骤，由此在基底晶片上制造具有薄膜的接合晶片，其中在离子注入步骤中执行的接合晶片的离子注入被分成多个在每次离子注入之后，接合晶片在其自身的轴上旋转预定的旋转角度，并且在通过旋转获得的布置位置处执行下一个离子注入。

3. 发明申请

US20100112824A1 METHOD FOR FORMING SILICON OXIDE FILM OF SOI WAFER 有权
标题翻译：形成硅波形硅氧烷膜的方法
公开(公告)号：US20100112824A1
公开(公告)日：2010-05-06
申请号：US12450955
申请日：2008-04-25
申请人： Isao Yokokawa , Nobuhiko Noto , Shin-ichi Yamaguchi
发明人： Isao Yokokawa , Nobuhiko Noto , Shin-ichi Yamaguchi
IPC分类号： H01L21/316
CPC分类号： H01L21/324 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/7624
摘要： The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, heat treatment is additionally performed (a process (B)) in a non-oxidizing atmosphere at a temperature higher than the temperature at which the thermal oxidation treatment was performed, whereby a silicon oxide film is formed on the front surface of an SOI layer. This provides a method for forming a silicon oxide film of an SOI wafer, the method that can prevent an SOI wafer from being warped after thermal oxidation treatment even when an SOI wafer having a thick oxide film on the back surface is used and a silicon oxide film for forming a device is formed by thermal oxidation on the front surface on the SOI layer side, and can reduce exposure failure and adsorption failure caused by warpage of the SOI wafer and enhance yields of device fabrication.
摘要翻译：本发明是一种用于形成SOI晶片的氧化硅膜的方法，至少在后表面具有氧化膜的SOI晶片上进行热氧化处理的方法（工艺（A）），在在非氧化性气氛中，在高于进行热氧化处理的温度的温度下，另外进行热处理（工序（B）），在氧化膜的表面上形成氧化硅膜 SOI层。这提供了一种用于形成SOI晶片的氧化硅膜的方法，即使在使用背面具有厚氧化膜的SOI晶片和氧化硅后，也可以防止SOI晶片在热氧化处理后翘曲的方法用于形成器件的膜通过在SOI层侧的前表面上的热氧化形成，并且可以减少由SOI晶片的翘曲引起的暴露失效和吸附失效，并提高器件制造的产量。

4. 发明申请

US20100112781A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20100112781A1
公开(公告)日：2010-05-06
申请号：US12450960
申请日：2008-04-16
申请人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
发明人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76256
摘要： The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.
摘要翻译：本发明提供一种制造SOI晶片的方法，包括：准备由p +硅单晶晶片构成的基底晶片和由含有掺杂剂的硅单晶晶片组成的接合晶片的步骤，其浓度低于基片; 基于热氧化在基底晶片的整个表面上形成氧化硅膜的步骤; 通过氧化硅膜将接合晶片接合到基底晶片的步骤; 以及减小接合晶片的厚度以形成SOI层的步骤，其中在所述基底晶片的接合表面的相反侧的表面上形成CVD绝缘膜的步骤在所述基底晶片的接合表面的热氧化步骤之前提供基片。结果，可以提供一种制造SOI晶片的方法，其可以容易地防止基底晶片中包含的p型掺杂物从基底晶片的接合表面的相对侧上的表面向外扩散，这是由于进行高温热处理，可以抑制该掺杂剂混入SOI层，从而降低翘曲。

5. 发明申请

US20070287269A1 Method For Producing Semiconductor Wafer 审中-公开
标题翻译：生产半导体晶圆的方法
公开(公告)号：US20070287269A1
公开(公告)日：2007-12-13
申请号：US11665362
申请日：2005-10-14
申请人： Isao Yokokawa , Nobuhiko Noto
发明人： Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L21/02664
摘要： The present invention is a method for producing a semiconductor wafer, comprising at least steps of: epitaxially growing a SiGe layer on a surface of a silicon single crystal wafer that is to be a bond wafer; implanting at least one kind of hydrogen ion and rare gas ion through the SiGe layer, so that an ion implanted layer is formed inside the bond wafer; closely contacting and bonding a surface of the SiGe layer and a surface of a base wafer through an insulator film; then performing delamination at the ion implanted layer, removing a Si layer in a delaminated layer transferred to a side of the base wafer by the delamination, so that the SiGe layer is exposed; and then subjecting the exposed SiGe layer to a heat treatment for enriching Ge under an oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere. Thereby, a method for producing a semiconductor wafer having a SiGe layer in which lattice relaxation is sufficiently performed and of which surface roughness is suppressed and of which crystallinity is good is provided.
摘要翻译：本发明是一种制造半导体晶片的方法，至少包括以下步骤：在作为接合晶片的硅单晶晶片的表面上外延生长SiGe层; 通过SiGe层注入至少一种氢离子和稀有气体离子，从而在接合晶片的内部形成离子注入层; 通过绝缘膜紧密接触和接合SiGe层的表面和基底晶片的表面; 然后在离子注入层进行分层，通过分层去除转移到基底晶片一侧的分层中的Si层，使得SiGe层露出; 然后对暴露的SiGe层进行热处理，以在氧化气氛下进行Ge的富集和/或热处理，以在非氧化气氛下缓和晶格应变。因此，提供一种具有SiGe层的半导体晶片的制造方法，其中充分进行晶格弛豫并且抑制表面粗糙度并且结晶度良好的SiGe层。

6. 发明申请

US20110281420A1 METHOD FOR MANUFACTURING SOI WAFER 审中-公开
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110281420A1
公开(公告)日：2011-11-17
申请号：US13145275
申请日：2010-01-08
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/30608 , H01L21/31111
摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.
摘要翻译：一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

7. 发明授权

US08987109B2 Method for manufacturing bonded wafer and bonded SOI wafer 有权
标题翻译：制造接合晶片和接合SOI晶圆的方法
公开(公告)号：US08987109B2
公开(公告)日：2015-03-24
申请号：US14114959
申请日：2012-04-25
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/265 , H01L29/02 , H01L21/687 , H01L21/762
CPC分类号： H01L29/02 , H01L21/265 , H01L21/26586 , H01L21/68764 , H01L21/68771 , H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation.
摘要翻译：制造接合晶片的方法包括：使用间歇型离子注入机的离子注入步骤; 键合步骤，将接合晶片的离子注入表面直接或通过绝缘膜粘合到基底晶片的表面; 以及在离子注入层分层接合晶片的分层步骤，由此在基底晶片上制造具有薄膜的接合晶片，其中在离子注入步骤中执行的接合晶片的离子注入被分成多个在每次离子注入之后，接合晶片在其自身的轴上旋转预定的旋转角度，并且在通过旋转获得的布置位置处执行下一个离子注入。

8. 发明授权

US08361888B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08361888B2
公开(公告)日：2013-01-29
申请号：US12451533
申请日：2008-05-27
申请人： Isao Yokokawa , Nobuhiko Noto
发明人： Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： The present invention provides a method for manufacturing an SOI wafer wherein an HCl gas is mixed in a reactive gas at a step of forming a silicon epitaxial layer on an entire surface of an SOI layer of the SOI wafer having an oxide film on a terrace portion. As a result, it is possible to provide the method for manufacturing an SOI wafer that can easily grow the silicon epitaxial layer on the SOI layer of the SOI wafer having the oxide film on the terrace portion, suppress warpage of the SOI wafer to be manufactured, reduce generation of particles even at subsequent steps, e.g., device manufacture, and decrease a cost for manufacturing such an SOI wafer.
摘要翻译：本发明提供了一种制造SOI晶片的方法，其中在形成硅外延层的步骤中将HCl气体混合在具有在台面部分上具有氧化物膜的SOI晶片的SOI层的整个表面上的步骤。结果，可以提供一种制造SOI晶片的方法，该SOI晶片可以容易地在具有在该台面部分上具有氧化膜的SOI晶片的SOI层上生长硅外延层，从而抑制待制造的SOI晶片的翘曲即使在随后的步骤（例如，器件制造）也减少了颗粒的产生，并降低了制造这种SOI晶片的成本。

9. 发明授权

US07550309B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07550309B2
公开(公告)日：2009-06-23
申请号：US11662594
申请日：2005-09-16
申请人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
发明人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： H01L21/00
CPC分类号： C30B33/06 , C30B29/30 , C30B29/32 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02694
摘要： The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a Si1-XGeX layer (0
摘要翻译：本发明是一种制造半导体晶片的方法，至少包括以下步骤：在SOI晶片上外延生长Si1-XGeX层（0

10. 发明授权

US07985660B2 Method for manufacturing soi wafer 有权
标题翻译：制造硅片的方法
公开(公告)号：US07985660B2
公开(公告)日：2011-07-26
申请号：US12450960
申请日：2008-04-16
申请人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
发明人： Isao Yokokawa , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76256
摘要： The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.
摘要翻译：本发明提供一种制造SOI晶片的方法，包括：准备由p +硅单晶晶片构成的基底晶片和由含有掺杂剂的硅单晶晶片组成的接合晶片的步骤，其浓度低于基片; 基于热氧化在基底晶片的整个表面上形成氧化硅膜的步骤; 通过氧化硅膜将接合晶片接合到基底晶片的步骤; 以及减小接合晶片的厚度以形成SOI层的步骤，其中在所述基底晶片的接合表面的相反侧的表面上形成CVD绝缘膜的步骤在所述基底晶片的接合表面的热氧化步骤之前提供基片。结果，可以提供一种制造SOI晶片的方法，其可以容易地防止基底晶片中包含的p型掺杂物从基底晶片的接合表面的相对侧上的表面向外扩散，这是由于进行高温热处理，可以抑制该掺杂剂混入SOI层，从而降低翘曲。

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