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1. 发明申请

US20080203589A1 VARIABLE FILL AND CHEESE FOR MITIGATION OF BEOL TOPOGRAPHY 有权
标题翻译：可变填充物和小麦用于减轻大肠杆菌的形态
公开(公告)号：US20080203589A1
公开(公告)日：2008-08-28
申请号：US11678163
申请日：2007-02-23
申请人： Todd C. Bailey , Ryan P. Deschner , Wai-Kin Li , Roger A. Quon
发明人： Todd C. Bailey , Ryan P. Deschner , Wai-Kin Li , Roger A. Quon
IPC分类号： H01L23/544
CPC分类号： G06F17/5068 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A method of designing features on a semiconductor wafer. A design of active or functional features is provided for chiplets separated by kerf areas on the wafer. The method then includes determining pattern density of the chiplet features, and applying a pattern of spaced dummy features on chiplet area not covered by active or functional features, as well as in the kerf areas. The dummy features are uniformly expanded or reduced in size until a desired dummy feature pattern density is reached.
摘要翻译：一种在半导体晶片上设计特征的方法。提供了由晶片上的切口区域分开的小芯片的主动或功能特征的设计。该方法然后包括确定小灯特征的图案密度，以及在未被活动或功能特征覆盖的小区区域以及在切口区域中应用间隔的虚拟特征图案。虚拟特征被均匀地扩大或缩小，直到达到所需的虚拟特征图案密度。

2. 发明授权

US07926006B2 Variable fill and cheese for mitigation of BEOL topography 有权
标题翻译：可变填充和奶酪，以减轻BEOL地形
公开(公告)号：US07926006B2
公开(公告)日：2011-04-12
申请号：US11678163
申请日：2007-02-23
申请人： Todd C Bailey , Ryan P. Deschner , Wai-Kin Li , Roger A. Quon
发明人： Todd C Bailey , Ryan P. Deschner , Wai-Kin Li , Roger A. Quon
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A method of designing features on a semiconductor wafer. A design of active or functional features is provided for chiplets separated by kerf areas on the wafer. The method then includes determining pattern density of the chiplet features, and applying a pattern of spaced dummy features on chiplet area not covered by active or functional features, as well as in the kerf areas. The dummy features are uniformly expanded or reduced in size until a desired dummy feature pattern density is reached.
摘要翻译：一种在半导体晶片上设计特征的方法。提供了由晶片上的切口区域分开的小芯片的主动或功能特征的设计。该方法然后包括确定小灯特征的图案密度，以及在未被活动或功能特征覆盖的小区区域以及在切口区域中应用间隔的虚拟特征图案。虚拟特征被均匀地扩大或缩小，直到达到所需的虚拟特征图案密度。

3. 发明申请

US20090004869A1 MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER 有权
标题翻译：使用植入物停留层的掩模成形和植入方法
公开(公告)号：US20090004869A1
公开(公告)日：2009-01-01
申请号：US12145915
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

4. 发明申请

US20080286545A1 MASK HAVING IMPLANT STOPPING LAYER 审中-公开
标题翻译：掩蔽具有植入物停留层
公开(公告)号：US20080286545A1
公开(公告)日：2008-11-20
申请号：US12145922
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： B32B7/02
CPC分类号： H01L21/26513 , H01L21/266 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

5. 发明授权

US07651947B2 Mask forming and implanting methods using implant stopping layer and mask so formed 失效
标题翻译：使用植入物停止层和掩模形成的掩模形成和植入方法
公开(公告)号：US07651947B2
公开(公告)日：2010-01-26
申请号：US11420321
申请日：2006-05-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

6. 发明授权

US07998871B2 Mask forming and implanting methods using implant stopping layer 有权
标题翻译：使用植入物停止层的掩模形成和植入方法
公开(公告)号：US07998871B2
公开(公告)日：2011-08-16
申请号：US12145915
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

7. 发明申请

US20070275563A1 MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER AND MASK SO FORMED 失效
标题翻译：使用植入物层和掩模形成的掩模形成和植入方法
公开(公告)号：US20070275563A1
公开(公告)日：2007-11-29
申请号：US11420321
申请日：2006-05-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

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