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1. 发明申请

US20080203589A1 VARIABLE FILL AND CHEESE FOR MITIGATION OF BEOL TOPOGRAPHY 有权
标题翻译：可变填充物和小麦用于减轻大肠杆菌的形态
公开(公告)号：US20080203589A1
公开(公告)日：2008-08-28
申请号：US11678163
申请日：2007-02-23
申请人： Todd C. Bailey , Ryan P. Deschner , Wai-Kin Li , Roger A. Quon
发明人： Todd C. Bailey , Ryan P. Deschner , Wai-Kin Li , Roger A. Quon
IPC分类号： H01L23/544
CPC分类号： G06F17/5068 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A method of designing features on a semiconductor wafer. A design of active or functional features is provided for chiplets separated by kerf areas on the wafer. The method then includes determining pattern density of the chiplet features, and applying a pattern of spaced dummy features on chiplet area not covered by active or functional features, as well as in the kerf areas. The dummy features are uniformly expanded or reduced in size until a desired dummy feature pattern density is reached.
摘要翻译：一种在半导体晶片上设计特征的方法。提供了由晶片上的切口区域分开的小芯片的主动或功能特征的设计。该方法然后包括确定小灯特征的图案密度，以及在未被活动或功能特征覆盖的小区区域以及在切口区域中应用间隔的虚拟特征图案。虚拟特征被均匀地扩大或缩小，直到达到所需的虚拟特征图案密度。

2. 发明授权

US07998871B2 Mask forming and implanting methods using implant stopping layer 有权
标题翻译：使用植入物停止层的掩模形成和植入方法
公开(公告)号：US07998871B2
公开(公告)日：2011-08-16
申请号：US12145915
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

3. 发明申请

US20070275563A1 MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER AND MASK SO FORMED 失效
标题翻译：使用植入物层和掩模形成的掩模形成和植入方法
公开(公告)号：US20070275563A1
公开(公告)日：2007-11-29
申请号：US11420321
申请日：2006-05-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

4. 发明申请

US20080286545A1 MASK HAVING IMPLANT STOPPING LAYER 审中-公开
标题翻译：掩蔽具有植入物停留层
公开(公告)号：US20080286545A1
公开(公告)日：2008-11-20
申请号：US12145922
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： B32B7/02
CPC分类号： H01L21/26513 , H01L21/266 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

5. 发明申请

US20090004869A1 MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER 有权
标题翻译：使用植入物停留层的掩模成形和植入方法
公开(公告)号：US20090004869A1
公开(公告)日：2009-01-01
申请号：US12145915
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

6. 发明授权

US07651947B2 Mask forming and implanting methods using implant stopping layer and mask so formed 失效
标题翻译：使用植入物停止层和掩模形成的掩模形成和植入方法
公开(公告)号：US07651947B2
公开(公告)日：2010-01-26
申请号：US11420321
申请日：2006-05-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

7. 发明授权

US07583362B2 Stray light feedback for dose control in semiconductor lithography systems 有权
标题翻译：杂散光反馈用于半导体光刻系统中的剂量控制
公开(公告)号：US07583362B2
公开(公告)日：2009-09-01
申请号：US10995714
申请日：2004-11-23
申请人： Sajan Marokkey , Wai-Kin Li , Todd C. Bailey
发明人： Sajan Marokkey , Wai-Kin Li , Todd C. Bailey
IPC分类号： G03B27/32
CPC分类号： G03F7/7085 , G03F7/70558 , G03F7/70941
摘要： A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.
摘要翻译：用于光刻曝光工具的杂散光反馈系统和方法。杂散光反馈有助于控制杂散光规格限制内的关键尺寸（CD）。根据曝光工具中测量的杂散光和抗蚀剂的灵敏度计算杂光光剂量控制因子。杂散光剂量控制因子用于调整曝光剂量以达到所需的CD。可以监测杂散光，并且如果达到或超过杂散光的阈值水平，则可以针对特定类型的半导体产品，抗蚀剂或掩模级别停止使用曝光工具，直到透镜系统被清洁。

8. 发明申请

US20090284726A1 Stray Light Feedback for Dose Control in Semiconductor Lithography Systems 有权
标题翻译：半导体光刻系统中剂量控制的杂散光反馈
公开(公告)号：US20090284726A1
公开(公告)日：2009-11-19
申请号：US12511883
申请日：2009-07-29
申请人： Sajan Marokkey , Wai-Kin Li , Todd C. Bailey
发明人： Sajan Marokkey , Wai-Kin Li , Todd C. Bailey
IPC分类号： G03B27/72
CPC分类号： G03F7/7085 , G03F7/70558 , G03F7/70941
摘要： A lithography system with a stray light feedback system is disclosed. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.
摘要翻译：公开了具有杂散光反馈系统的光刻系统。杂散光反馈有助于控制杂散光规格限制内的关键尺寸（CD）。根据曝光工具中测量的杂散光和抗蚀剂的灵敏度计算杂光光剂量控制因子。杂散光剂量控制因子用于调整曝光剂量以达到所需的CD。可以监测杂散光，并且如果达到或超过杂散光的阈值水平，则可以针对特定类型的半导体产品，抗蚀剂或掩模级别停止使用曝光工具，直到透镜系统被清洁。

9. 发明授权

US07514356B2 Ribs for line collapse prevention in damascene structures 有权
标题翻译：在大马士革结构中防止线塌陷的肋骨
公开(公告)号：US07514356B2
公开(公告)日：2009-04-07
申请号：US11069068
申请日：2005-03-01
申请人： Sajan Marokkey , O Seo Park , Wai-Kin Li , Todd C. Bailey
发明人： Sajan Marokkey , O Seo Park , Wai-Kin Li , Todd C. Bailey
IPC分类号： H01L21/4763
CPC分类号： H01L21/31144
摘要： A method of preventing resist line collapse in damascene structures and a structure thereof is disclosed. A damascene pattern for resist lines is enhanced with ribs extending therefrom. The ribs provide mechanical support for resist lines and improve the lithography process for forming the resist lines, particularly when a negative focus is used. The ribs may extend between vias in an underlying material layer. The method results in structurally strong resist lines for damascene structures that are less likely to collapse.
摘要翻译：公开了一种防止镶嵌结构中的抗蚀层塌陷的方法及其结构。用于抵抗线的镶嵌图案被从其延伸的肋条增强。这些肋为抗蚀剂线提供机械支撑，并且改进了用于形成抗蚀剂线的光刻工艺，特别是当使用负焦点时。肋可以在下面的材料层中的通孔之间延伸。该方法导致结构上较强的不可能崩溃的镶嵌结构的抗蚀剂线。

10. 发明申请

US20070275330A1 BOTTOM ANTI-REFLECTIVE COATING 审中-公开
标题翻译：底部防反射涂层
公开(公告)号：US20070275330A1
公开(公告)日：2007-11-29
申请号：US11420251
申请日：2006-05-25
申请人： Todd C. Bailey , Wai-Kin Li , Sajan Marokkey , Dirk Pfeiffer
发明人： Todd C. Bailey , Wai-Kin Li , Sajan Marokkey , Dirk Pfeiffer
IPC分类号： G03F7/26
CPC分类号： G03F7/091
摘要： Disclosed are embodiments of a bi-layer bottom anti-reflective coating (BARC) with graded optical properties (i.e., a graded refractive index) and a method of forming the BARC. The BARC is formed by sequentially coating two BARC layers onto a substrate. Each BARC layer comprises a polymer and an optical component, each has slightly different optical properties, and each is processed such that either the polymers partially intermix or the optical component partially diffuses between the layers in order to create a graded chromophore concentration across the resulting BARC. Thus, a gradual transition of optical properties is created from the substrate/BARC interface to the BARC/photo-resist interface.
摘要翻译：公开了具有渐变光学性质（即梯度折射率）的双层底部抗反射涂层（BARC）的实施方案和形成BARC的方法。 BARC通过将两个BARC层依次涂覆到基底上而形成。每个BARC层包括聚合物和光学组件，每个具有略微不同的光学性质，并且每个处理使得聚合物部分混合或光学部件在层之间部分扩散，以便在所得到的BARC上产生分级发色团浓度。因此，从衬底/ BARC界面到BARC /光刻胶界面产生光学特性的逐渐转变。

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