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    • 4. 发明申请
    • MAGNETO-RESISTIVE MEMORY DEVICE
    • 磁电阻存储器件
    • US20050007815A1
    • 2005-01-13
    • US10614230
    • 2003-07-07
    • Todd Adelmann
    • Todd Adelmann
    • G11C11/15G11C11/00
    • G11C11/15
    • A memory array for a magneto-resistive memory device is provided. The array includes a plurality of memory cells disposed in rows and columns in the memory array. Each memory cell is paired with another memory cell such that the pair of memory cells are driven to first and second, different states by the same signals. A sense point for reading data from a pair of memory cells is also provided. The sense point is located at a point with one of the memory cells of each pair on one side of the sense point and the other memory cell of each pair located on the other side of the sense point.
    • 提供了一种用于磁阻存储器件的存储器阵列。 阵列包括以存储器阵列中的行和列布置的多个存储单元。 每个存储器单元与另一个存储器单元配对,使得该对存储单元被相同的信号驱动到第一和第二不同的状态。 还提供了用于从一对存储单元读取数据的感测点。 感测点位于感测点的一侧上的每对存储单元之一的点和位于感测点的另一侧的每对的另一个存储单元的点上。