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1. 发明申请

US20050149687A1 Device identification using a memory profile 有权
公开(公告)号：US20050149687A1
公开(公告)日：2005-07-07
申请号：US11061207
申请日：2005-02-18
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G06F21/00 , G11C7/20 , G11C11/4072 , G11C16/20 , G11C29/00 , G06F13/28 , G06F9/34 , G06F12/00
CPC分类号： G06F21/73 , G11C7/20 , G11C11/4072 , G11C16/20 , G11C29/70 , G11C2029/4402
摘要： In accordance with an embodiment of the present invention, a method for identification of a semiconductor device having a plurality of memory blocks, comprises accessing a memory profile for the semiconductor device based at least in part on an identification of defective memory blocks of the semiconductor device and determining a unique identifier for the semiconductor device based at least in part on the memory profile of the semiconductor device.

2. 发明申请

US20050060628A1 Assisted memory device 有权
标题翻译：辅助存储设备
公开(公告)号：US20050060628A1
公开(公告)日：2005-03-17
申请号：US10661937
申请日：2003-09-12
申请人： Andrew Spencer , Todd Adelmann , Stewart Wyatt , Kenneth Smith
发明人： Andrew Spencer , Todd Adelmann , Stewart Wyatt , Kenneth Smith
IPC分类号： G06F11/10 , G06F13/16 , H03M13/00
CPC分类号： G06F13/16 , G06F11/076 , G06F11/1008
摘要： A device comprises a memory array in which a plurality of codewords is stored. Each codeword comprises an error correction code and a data block that comprises a plurality of units of data. The device further comprises an error code correction module coupled to the memory array. When multiple units of data are to be read from the device for an address, a codeword stored in a location associated with the address is fetched from the memory array, the error code correction module decodes the codeword and corrects any errors in the data block for that codeword, and the multiple units of data are read from the corrected data block.
摘要翻译：一种设备包括其中存储多个码字的存储器阵列。每个码字包括纠错码和包括多个数据单元的数据块。该设备还包括耦合到存储器阵列的错误代码校正模块。当从设备读取地址的多个单元数据时，存储在与地址相关联的位置的代码字从存储器阵列中取出，错误代码校正模块解码码字并且校正数据块中的任何错误从校正的数据块中读取该码字和多个数据单元。

3. 发明申请

US20050055621A1 Magnetic memory with error correction coding 有权
标题翻译：具有纠错编码的磁存储器
公开(公告)号：US20050055621A1
公开(公告)日：2005-03-10
申请号：US10659630
申请日：2003-09-10
申请人： Todd Adelmann , Stewart Wyatt , Kenneth Smith
发明人： Todd Adelmann , Stewart Wyatt , Kenneth Smith
IPC分类号： G06F12/16 , G06F11/00 , G06F11/10 , G11C11/15 , G11C29/00 , G11C29/42 , H03M13/00
CPC分类号： G11C11/15 , G06F11/1008 , G06F2211/109
摘要： Embodiments of the present invention are implemented in memory systems. In one embodiment, the memory comprises an array of memory cells and a control circuit. The control circuit is configured to read error correction coded data from the array of memory cells, provide error correction code decoding to selected error correction coded data and discard unused error correction code parity data of unselected error correction coded data.
摘要翻译：本发明的实施例在存储器系统中实现。在一个实施例中，存储器包括存储器单元阵列和控制电路。控制电路被配置为从存储器单元阵列读取纠错编码数据，向所选择的纠错编码数据提供纠错码解码，并丢弃未选择的纠错编码数据的未使用的纠错码奇偶校验数据。

4. 发明申请

US20050036428A1 Storage device having a probe with a tip to form a groove in a storage medium 失效
标题翻译：存储装置具有带尖端的探针以在存储介质中形成凹槽
公开(公告)号：US20050036428A1
公开(公告)日：2005-02-17
申请号：US10640393
申请日：2003-08-13
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G11B9/10 , G11B9/14 , G11B11/26
CPC分类号： G11B9/1436 , B82Y10/00
摘要： A storage device comprises a probe having a tip. The storage device also comprises a storage medium, with the tip of the probe to form the groove in the storage medium. The probe tip interacts with a surface of the groove to store and read data.
摘要翻译：存储装置包括具有尖端的探针。存储装置还包括存储介质，其中探针的尖端在存储介质中形成凹槽。探头尖与槽的表面相互作用以存储和读取数据。

5. 发明申请

US20050007815A1 MAGNETO-RESISTIVE MEMORY DEVICE 有权
标题翻译：磁电阻存储器件
公开(公告)号：US20050007815A1
公开(公告)日：2005-01-13
申请号：US10614230
申请日：2003-07-07
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G11C11/15 , G11C11/00
CPC分类号： G11C11/15
摘要： A memory array for a magneto-resistive memory device is provided. The array includes a plurality of memory cells disposed in rows and columns in the memory array. Each memory cell is paired with another memory cell such that the pair of memory cells are driven to first and second, different states by the same signals. A sense point for reading data from a pair of memory cells is also provided. The sense point is located at a point with one of the memory cells of each pair on one side of the sense point and the other memory cell of each pair located on the other side of the sense point.
摘要翻译：提供了一种用于磁阻存储器件的存储器阵列。阵列包括以存储器阵列中的行和列布置的多个存储单元。每个存储器单元与另一个存储器单元配对，使得该对存储单元被相同的信号驱动到第一和第二不同的状态。还提供了用于从一对存储单元读取数据的感测点。感测点位于感测点的一侧上的每对存储单元之一的点和位于感测点的另一侧的每对的另一个存储单元的点上。

6. 发明申请

US20050013230A1 Storage device having a probe with plural tips 失效
标题翻译：存储装置具有多个尖端的探针
公开(公告)号：US20050013230A1
公开(公告)日：2005-01-20
申请号：US10619199
申请日：2003-07-14
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G11B9/00 , G11B9/10
CPC分类号： G11B9/14 , B82Y10/00 , G11B9/1409 , G11B9/1418 , G11B9/1436 , G11B9/1445 , G11B9/1454 , G11B2005/0021
摘要： A storage device includes a storage medium and a probe having plural tips. The storage medium has a surface in which storage cells are to be formed. The tips of the probe form plural perturbations in the surface in at least one of the storage cells for representing a data bit.
摘要翻译：存储装置包括存储介质和具有多个尖端的探针。存储介质具有要形成存储单元的表面。探针的尖端在用于表示数据位的至少一个存储单元中的表面中形成多个扰动。

7. 发明申请

US20070165513A1 Storage device having a probe with a tip to form a groove in a storage medium 审中-公开
标题翻译：存储装置具有带尖端的探针以在存储介质中形成凹槽
公开(公告)号：US20070165513A1
公开(公告)日：2007-07-19
申请号：US11702721
申请日：2007-02-06
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G11B9/00
CPC分类号： G11B9/1436 , B82Y10/00
摘要： A storage device comprises a probe having a tip. The storage device also comprises a storage medium, with the tip of the probe to form the groove in the storage medium. The probe tip interacts with a surface of the groove to store and read data.
摘要翻译：存储装置包括具有尖端的探针。存储装置还包括存储介质，其中探针的尖端在存储介质中形成凹槽。探头尖与槽的表面相互作用以存储和读取数据。

8. 发明申请

US20050185567A1 Storage device having a storage cell programmable to one of more than two storage states 失效
标题翻译：存储装置具有可编程为多于两个存储状态之一的存储单元
公开(公告)号：US20050185567A1
公开(公告)日：2005-08-25
申请号：US10782626
申请日：2004-02-19
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G11B9/00 , G11B9/04 , G11B9/14 , G11B11/00 , G11C11/56
CPC分类号： G11C11/56 , B82Y10/00 , G11B9/04 , G11B9/1409 , G11B9/149
摘要： A storage device includes a storage medium having plural storage cells, and a probe to scan across a surface of the storage medium to program the storage cells. The probe is adapted to selectively program each storage cell to one of more than two storage states.
摘要翻译：存储装置包括具有多个存储单元的存储介质和用于扫描存储介质的表面以对存储单元进行编程的探针。该探针适于选择性地将每个存储单元编程为多于两个存储状态之一。

9. 发明申请

US20050038950A1 Storage device having a probe and a storage cell with moveable parts 失效
标题翻译：具有探针的存储装置和具有可移动部件的存储单元
公开(公告)号：US20050038950A1
公开(公告)日：2005-02-17
申请号：US10640063
申请日：2003-08-13
申请人： Todd Adelmann
发明人： Todd Adelmann
IPC分类号： G01R31/26 , G06F12/00 , G11B9/00 , G11B9/06 , G11B11/00 , G11B11/16 , G11C5/00 , G11C5/06 , G11C11/56 , H01L21/66
CPC分类号： G11C11/56 , B82Y10/00 , G11B9/062 , G11B9/14 , G11B9/1445 , G11B9/1472 , G11B11/007 , G11B11/16 , G11B2005/0021 , G11C5/06 , H01H2001/0047
摘要： A storage device comprises a probe and storage cell having moveable parts that are actuatable to plural positions to represent respective different data states. The probe interacts with the moveable parts to selectively actuate the moveable parts to the plural positions.
摘要翻译：存储装置包括探针和存储单元，其具有可致动到多个位置的可移动部分，以表示各自的不同数据状态。探针与可移动部件相互作用以选择性地将可移动部件致动到多个位置。

10. 发明申请

US20050013181A1 Assisted memory device with integrated cache 审中-公开
标题翻译：辅助内存设备集成缓存
公开(公告)号：US20050013181A1
公开(公告)日：2005-01-20
申请号：US10621632
申请日：2003-07-17
申请人： Todd Adelmann , Stewart Wyatt
发明人： Todd Adelmann , Stewart Wyatt
IPC分类号： G06F12/08 , G11C7/10 , G11C7/24 , G11C7/00
CPC分类号： G11C7/106 , G06F12/0862 , G06F12/0893 , G06F2212/3042 , G11C7/1051 , G11C7/1078 , G11C7/1087 , G11C7/24 , G11C2207/2245 , Y02D10/13
摘要： Disclosed herein are assisted memory devices having an integrated cache and methods implemented therein. In one embodiment, an integrated circuit device comprises a memory array integrated on a substrate with a decoder and a cache also integrated on the same substrate. The decoder may be configured to decode data retrieved from the memory array. The cache may be configured to retrieve data stored in the memory array in anticipation of a request for the data.
摘要翻译：这里公开了具有集成缓存的辅助存储器件及其中实现的方法。在一个实施例中，集成电路器件包括集成在具有解码器的衬底上的存储器阵列和也集成在同一衬底上的高速缓存器。解码器可以被配置为对从存储器阵列检索的数据进行解码。高速缓存可以被配置为在预期对数据的请求的情况下检索存储在存储器阵列中的数据。

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