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1. 发明申请

US20130071580A1 Activated Silicon Precursors For Low Temperature Deposition 有权
标题翻译：活性硅前体用于低温沉积
公开(公告)号：US20130071580A1
公开(公告)日：2013-03-21
申请号：US13609551
申请日：2012-09-11
申请人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
发明人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了使用卤化或氰化硅烷沉积SiN膜的方法。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

2. 发明授权

US08821986B2 Activated silicon precursors for low temperature deposition 有权
标题翻译：用于低温沉积的活性硅前体
公开(公告)号：US08821986B2
公开(公告)日：2014-09-02
申请号：US13609551
申请日：2012-09-11
申请人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
发明人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/50 , C23C16/34 , C23C16/505 , C23C16/36
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了使用卤化或氰化硅烷沉积SiN膜的方法。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

3. 发明授权

US08906457B2 Method of atomic layer deposition using metal precursors 有权
标题翻译：使用金属前体的原子层沉积方法
公开(公告)号：US08906457B2
公开(公告)日：2014-12-09
申请号：US13549910
申请日：2012-07-16
申请人： David Thompson , Jeffrey W. Anthis , Christian Dussarrat , Clement Lansalot-Matras
发明人： David Thompson , Jeffrey W. Anthis , Christian Dussarrat , Clement Lansalot-Matras
IPC分类号： C23C16/18 , C23C16/455
CPC分类号： C23C16/18 , C23C16/45553
摘要： Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups.
摘要翻译：提供了使用金属配位络合物在表面上沉积基本由Co，Mn，Ru或镧系金属构成的金属膜的方法。在该方法中使用的前体包括2-甲基亚胺吡咯基配体和/或N，N'-二异丙基甲酰胺配体。前体还可以含有环戊二烯基，五甲基环戊二烯基或吡咯基。

4. 发明申请

US20140017408A1 Deposition Of N-Metal Films Comprising Aluminum Alloys 有权
标题翻译：包含铝合金的N-金属膜的沉积
公开(公告)号：US20140017408A1
公开(公告)日：2014-01-16
申请号：US13930194
申请日：2013-06-28
申请人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
发明人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
IPC分类号： C23C18/00
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

5. 发明申请

US20120202357A1 In Situ Vapor Phase Surface Activation Of SiO2 有权
标题翻译： SiO2原位气相表面活化
公开(公告)号：US20120202357A1
公开(公告)日：2012-08-09
申请号：US13192041
申请日：2011-07-27
申请人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
发明人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
IPC分类号： H01L21/31 , B05D3/10
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/405 , C23C16/45525 , H01L21/02164 , H01L21/02181 , H01L21/0228 , H01L21/02312
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要翻译：描述制备用于后续成膜工艺的基材的方法。还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。热氧化物表面在基板的温度下暴露于高于饱和蒸气压的水分压，以将基本上没有反应性表面终止的致密热氧化物转变成具有羟基表面终止的表面。这可以在诸如氨的路易斯碱存在下进行。

6. 发明申请

US20120108062A1 Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods 有权
标题翻译：含氮配体及其在原子层沉积方法中的应用
公开(公告)号：US20120108062A1
公开(公告)日：2012-05-03
申请号：US13189647
申请日：2011-07-25
申请人： Jeffrey W. Anthis , David Thompson
发明人： Jeffrey W. Anthis , David Thompson
IPC分类号： H01L21/283 , C07F3/00 , C07F1/08 , C07F1/12 , C07F1/10 , C07F5/02 , C07F7/28
CPC分类号： C07D213/38 , C07C211/13 , C07C211/54 , C07D207/335 , C07D213/36 , C07F1/00 , C07F1/005 , C07F1/08 , C07F5/022 , C07F5/069 , C07F7/003 , C07F7/28 , C07F9/005 , C07F11/005 , C07F13/005 , C07F15/004 , C07F15/0053 , C07F15/0066 , C07F15/008 , C07F15/0093 , C23C16/18 , C23C16/45553 , C23C16/50
摘要： Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
摘要翻译：提供了使用包含含氮配体的金属配位络合物在表面上沉积元素金属膜的方法。还提供了可用于本发明方法的含氮配体和包含这些配体的金属配位络合物。

7. 发明申请

US20160002782A1 Catalytic Atomic Layer Deposition Of Films Comprising SiOC 审中-公开
标题翻译：包含SiOC的膜的催化原子层沉积
公开(公告)号：US20160002782A1
公开(公告)日：2016-01-07
申请号：US14769722
申请日：2014-02-20
申请人： David Thompson , Jeffrey W. ANTHIS
发明人： David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/455 , C23C16/30
CPC分类号： C23C16/45534 , C23C16/30 , H01L21/02126 , H01L21/02211 , H01L21/02277 , H01L21/0228
摘要： Provided are methods of for deposition of SiOC. Certain methods involve exposing a substrate surface to a first and second precursor in the presence of a catalyst comprising a neutral two electron donor base. The first precursor has formula (XyH3-ySi)zCH4-z, or (XyH3-ySi)(CH2)n(SiXyH3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, and n has a value between 2 and 5. The second precursor comprises water or a compound containing carbon and at least two hydroxyl groups. Certain other methods relate to exposing a substrate surface to a first and second precursor in the presence of a catalyst comprising a neutral two electron donor base, the first precursor comprising SiX4 or X3Si—SiX3, wherein X is a halide, and the second precursor comprising carbon and at least two hydroxyl groups.
摘要翻译：提供了沉积SiOC的方法。某些方法包括在包含中性二电子给体碱的催化剂存在下将基材表面暴露于第一和第二前体。第一前体具有式（XyH3-ySi）zCH4-z或（XyH3-ySi）（CH2）n（SiXyH3-y），其中X是卤素，y具有1和3之间的值，z具有值在1和3之间，n具有2和5之间的值。第二前体包含水或含有碳和至少两个羟基的化合物。某些其它方法涉及在包含中性二电子给体碱的催化剂存在下将基材表面暴露于第一和第二前体，第一前体包含SiX4或X3Si-SiX3，其中X是卤化物，第二前体包含碳和至少两个羟基。

8. 发明申请

US20140255606A1 Methods For Depositing Films Comprising Cobalt And Cobalt Nitrides 有权
标题翻译：沉积包含钴和钴氮化物的膜的方法
公开(公告)号：US20140255606A1
公开(公告)日：2014-09-11
申请号：US14198776
申请日：2014-03-06
申请人： David Thompson , Jeffrey W. Anthis , David Knapp , Benjamin Schmiege
发明人： David Thompson , Jeffrey W. Anthis , David Knapp , Benjamin Schmiege
IPC分类号： C23C16/42
CPC分类号： C23C16/42 , C23C16/18 , C23C16/34 , C23C16/45536 , C23C16/45553 , H01L21/28518 , H01L21/28562 , H01L21/76843
摘要： Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.
摘要翻译：描述的是含钴膜，以及用于提供含钴膜的方法。某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜，第一前体具有由以下表示的结构：其中每个R独立地为C 1 -C 6取代或未取代的烷烃，支链或支链烷烃，取代或未取代的烯烃，支链或非支链烯烃，取代或未取代的炔烃，支链或非支链炔烃或取代或未取代的芳烃，L是包含路易斯碱的配位配体。

9. 发明授权

US08734902B2 Precursors and methods for the atomic layer deposition of manganese 有权
标题翻译：锰的原子层沉积的前体和方法
公开(公告)号：US08734902B2
公开(公告)日：2014-05-27
申请号：US13415358
申请日：2012-03-08
申请人： David Thompson , Jeffrey W. Anthis
发明人： David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/00
CPC分类号： C07F13/005 , C07F13/00 , C23C16/16 , C23C16/45553
摘要： Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl.
摘要翻译：提供了方法和前体用于使用包含选自酰胺脒，混合烯酰胺和烯丙基的eta-3结合的单阴离子四电子给体配体或eta-2结合的脒基配体的金属配位络合物在表面上沉积元素锰膜。配体选自脒，烯酰氨基和烯丙基。

10. 发明申请

US20140102365A1 Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods 有权
标题翻译：含氮配体及其在原子层沉积方法中的应用
公开(公告)号：US20140102365A1
公开(公告)日：2014-04-17
申请号：US14134658
申请日：2013-12-19
申请人： Jeffrey W. Anthis , David Thompson
发明人： Jeffrey W. Anthis , David Thompson
IPC分类号： C23C16/18 , C07D213/38 , C07F5/06 , C07F5/02 , C07F7/28 , C07F1/08 , C07F7/00 , C07F9/00 , C07F15/00 , C07F1/00 , C07F13/00 , C07D207/335 , C07F11/00
CPC分类号： C07D213/38 , C07C211/13 , C07C211/54 , C07D207/335 , C07D213/36 , C07F1/00 , C07F1/005 , C07F1/08 , C07F5/022 , C07F5/069 , C07F7/003 , C07F7/28 , C07F9/005 , C07F11/005 , C07F13/005 , C07F15/004 , C07F15/0053 , C07F15/0066 , C07F15/008 , C07F15/0093 , C23C16/18 , C23C16/45553 , C23C16/50
摘要： Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
摘要翻译：提供了使用包含含氮配体的金属配位络合物在表面上沉积元素金属膜的方法。还提供了可用于本发明方法的含氮配体和包含这些配体的金属配位络合物。

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