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1. 发明申请

US20070212863A1 Double Exposure Double Resist Layer Process For Forming Gate Patterns 失效
标题翻译：双重曝光双抗蚀层工艺形成栅格图案
公开(公告)号：US20070212863A1
公开(公告)日：2007-09-13
申请号：US11308106
申请日：2006-03-07
申请人： Timothy Brunner , James Culp , Lars Liebmann
发明人： Timothy Brunner , James Culp , Lars Liebmann
IPC分类号： H01L21/467
CPC分类号： H01L21/76895 , H01L21/0274 , H01L21/28035 , H01L21/28123
摘要： A method of forming a planar CMOS transistor divides the step of forming the gate layer into a first step of patterning a resist layer with a first portion of the gate layer pattern and then etching the polysilicon with the pattern of the gates. A second step patterns a second resist layer with the image of the gate pads and local interconnect and then etching the polysilicon with the pattern of the gate pads and local interconnect, thereby reducing the number of diffraction and other cross-talk from different exposed areas.
摘要翻译：形成平面CMOS晶体管的方法将形成栅极层的步骤分成用栅极层图案的第一部分图案化抗蚀剂层，然后用栅极图案蚀刻多晶硅的第一步骤。第二步利用栅极焊盘和局部互连的图像来形成第二抗蚀剂层，然后用栅极焊盘和局部互连的图案蚀刻多晶硅，从而减少来自不同曝光区域的衍射数量和其它串扰。

2. 发明申请

US20060063103A1 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
标题翻译：辐射敏感性组合物和使用该辐射敏感组合物制造器件的方法
公开(公告)号：US20060063103A1
公开(公告)日：2006-03-23
申请号：US10948826
申请日：2004-09-23
申请人： Wu-Song Huang , Marie Angelopoulos , Timothy Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Marie Angelopoulos , Timothy Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/0755 , G03F7/0382 , G03F7/0392
摘要： A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.
摘要翻译：辐射敏感性组合物（以及使用该组合物制造器件的方法）包括非聚合倍半硅氧烷，其包含至少一种酸不稳定部分，包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物部分和辐射敏感性酸产生剂。另一种辐射敏感组合物（以及使用该组合物制造器件的方法）包括非聚合物倍半硅氧烷，包括至少一种水溶性基团可溶部分，包含碱性水溶性部分的聚合物，交联剂和辐射敏感性酸产生剂。

3. 发明申请

US20070224526A1 Fast method to model photoresist images using focus blur and resist blur 有权
标题翻译：使用聚焦模糊和抵抗模糊来快速模拟光刻胶图像
公开(公告)号：US20070224526A1
公开(公告)日：2007-09-27
申请号：US11378536
申请日：2006-03-17
申请人： Timothy Brunner , Gregg Gallatin , Ronald Gordon , Kafai Lai , Alan Rosenbluth , Nakgeuon Seong
发明人： Timothy Brunner , Gregg Gallatin , Ronald Gordon , Kafai Lai , Alan Rosenbluth , Nakgeuon Seong
IPC分类号： G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F1/70 , G03F7/70575
摘要： A method for determining an image of a patterned object formed by a polychromatic lithographic projection system having a laser radiation source of a finite spectral bandwidth and a lens for imaging the patterned object to an image plane within a resist layer. The method comprises providing patterns for the object, a spectrum of the radiation source to be used in the lithographic projection system, an intensity and polarization distribution of the radiation source, and a lens impulse response in the spatial domain or in the spatial frequency domain of the image. The method then includes forming a polychromatic 4D bilinear vector kernel comprising a partially coherent polychromatic joint response between pairs of points in the spatial domain or in the spatial frequency domain, determining the dominant polychromatic 2D kernels of the polychromatic 4D bilinear vector kernel, and determining the image of the patterned object from convolutions of the object patterns with the dominant polychromatic 2D kernels.
摘要翻译：一种用于确定由具有有限光谱带宽的激光辐射源的多色光刻投影系统形成的图案化物体的图像的方法和用于将图案化物体成像到抗蚀剂层内的图像平面的透镜。该方法包括提供对象的图案，在光刻投影系统中使用的辐射源的光谱，辐射源的强度和偏振分布以及在空间域或空间频域中的透镜脉冲响应图片。该方法然后包括形成多色4D双线性矢量核，其包括在空间域或空间频域中的点对之间的部分相干多色联合响应，确定多色4D双线性向量核的显性多色2D内核，并确定图形对象的图像与目标图案与显性多色2D内核的卷积。

4. 发明申请

US20070041003A1 Focus blur measurement and control method 失效
标题翻译：聚焦模糊测量和控制方法
公开(公告)号：US20070041003A1
公开(公告)日：2007-02-22
申请号：US11206326
申请日：2005-08-18
申请人： Christopher Ausschnitt , Timothy Brunner , Shahid Butt , Daniel Corliss
发明人： Christopher Ausschnitt , Timothy Brunner , Shahid Butt , Daniel Corliss
IPC分类号： G03B27/52
CPC分类号： G03F7/70641 , G03F7/70533 , G03F7/70625
摘要： A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies.
摘要翻译：一种用于优化光刻图案成像和处理系统中的成像和工艺参数设置的方法。该方法包括将印刷在光刻抗蚀剂层中的至少一个控制图案的第一组的尺寸相关联，在对应于不同剂量，散焦和模糊灵敏度的图案之上或之内的三个或更多个位置处测量。该方法然后包括测量印刷在光刻抗蚀剂层中的随后的一组控制图案上的尺寸，位于每个图案上或每个图案上的三个或更多个位置，其中最少三个位置与在第一组中测量的位置匹配，并且确定通过将匹配位置处的尺寸与相关依赖关系进行比较来形成随后的控制模式组相关联的有效剂量，散焦和模糊值。

5. 发明申请

US20070166648A1 INTEGRATED LITHOGRAPHY AND ETCH FOR DUAL DAMASCENE STRUCTURES 审中-公开
标题翻译：综合层析和二维DAMASCENE结构的蚀刻
公开(公告)号：US20070166648A1
公开(公告)日：2007-07-19
申请号：US11306935
申请日：2006-01-17
申请人： Shom Ponoth , William America , Timothy Brunner , Ronald DellaGuardia , Kaushal Patel
发明人： Shom Ponoth , William America , Timothy Brunner , Ronald DellaGuardia , Kaushal Patel
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , H01L21/76811
摘要： A method and structure for an integrated via and line lithography followed by integrated via and line etch. A two-layered, negative resist based lithography is used to generate a dual damascene structure in the photoresist which is subsequently transferred into the underlying ILD using an lithography with an integrated RIE. A method is also provided to correct any misalignment between the via and trench during photolithography steps which would reduce the size of the via opening and impact the via resistance.
摘要翻译：用于集成通孔和线光刻的方法和结构，随后是集成通孔和线蚀刻。使用双层负性抗蚀剂基光刻法在光致抗蚀剂中产生双镶嵌结构，其随后使用具有集成RIE的光刻转移到下面的ILD中。还提供了一种在光刻步骤期间校正通孔和沟槽之间的任何未对准的方法，这将减小通孔开口的尺寸并影响通孔电阻。

6. 发明申请

US20050045997A1 Method for producing self-aligned mask, articles produced by same and composition for same 有权
标题翻译：用于生产自对准面罩的方法，由相同制造的制品及其组合物
公开(公告)号：US20050045997A1
公开(公告)日：2005-03-03
申请号：US10653476
申请日：2003-09-02
申请人： Timothy Brunner , Matthew Colburn , Elbert Huang , Muthumanickam Sankarapandian
发明人： Timothy Brunner , Matthew Colburn , Elbert Huang , Muthumanickam Sankarapandian
IPC分类号： G03F7/00 , G03F7/20 , H01L23/58
CPC分类号： H01L21/76834 , G03F7/0035 , G03F7/2022 , H01L21/76849 , Y10S430/146
摘要： A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩蔽材料是光敏的或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。现有图案可以由具有第一反射率的第一组基底区域和第二组区域组成，该第二组区域具有不同于第一组成的第二反射率。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。按照该方法制造的结构。

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