会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • SELECTIVE COPPER ENCAPSULATION LAYER DEPOSITION
    • 选择铜包层沉积
    • US20110162875A1
    • 2011-07-07
    • US12683857
    • 2010-01-07
    • Tien-Jen ChengAbhishek DubeZhengwen LiHuilong Zhu
    • Tien-Jen ChengAbhishek DubeZhengwen LiHuilong Zhu
    • H05K1/09B05D5/12
    • H01L21/76834H01L21/76826H01L21/76832H05K3/282H05K3/388H05K3/4682
    • A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.
    • 金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度,其仅选择性地沉积在暴露的铜表面上。 下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。 在形成含铜结构的平坦化工艺之后,将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。 该材料仅选择性地沉积在暴露的Cu表面上,从而形成自对准的铜封装层,并且对下面的铜表面提供高粘附强度。 随后可以在铜封装层上形成电介质盖层和上层金属互连结构。
    • 8. 发明授权
    • Selective copper encapsulation layer deposition
    • 选择性铜包层沉积
    • US08415252B2
    • 2013-04-09
    • US12683857
    • 2010-01-07
    • Tien-Jen ChengAbhishek DubeZhengwen LiHuilong Zhu
    • Tien-Jen ChengAbhishek DubeZhengwen LiHuilong Zhu
    • H01L21/44
    • H01L21/76834H01L21/76826H01L21/76832H05K3/282H05K3/388H05K3/4682
    • A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.
    • 金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度,其仅选择性地沉积在暴露的铜表面上。 下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。 在形成含铜结构的平坦化工艺之后,将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。 该材料仅选择性地沉积在暴露的Cu表面上,从而形成自对准的铜封装层,并且对下面的铜表面提供高粘附强度。 随后可以在铜封装层上形成电介质盖层和上层金属互连结构。