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1. 发明申请

US20100038789A1 CONFORMAL ADHESION PROMOTER LINER FOR METAL INTERCONNECTS 失效
标题翻译：用于金属互连的一致粘合促进剂衬里
公开(公告)号：US20100038789A1
公开(公告)日：2010-02-18
申请号：US12190906
申请日：2008-08-13
申请人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong , Huilong Zhu
发明人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong , Huilong Zhu
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76864 , H01L21/76868 , H01L21/76877 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.
摘要翻译：用至少一个线槽和/或至少一个通孔腔对电介质层进行构图。金属氮化物衬垫形成在图案化电介质层的表面上。在金属氮化物衬垫的表面上形成金属衬垫。通过原子层沉积（ALD）或化学气相沉积（CVD）直接在金属衬垫上形成共形的氮化铜层。在适形的氮化铜层上直接形成Cu籽晶层。至少一个线槽和/或至少一个通孔腔被电镀材料填充。保形氮化铜层和Cu籽晶层之间的直接接触提供了增强的粘合强度。可以将共形的氮化铜层退火以将暴露的外部部分翻转成连续的Cu层，其可用于减小Cu籽晶层的厚度。

2. 发明授权

US08105937B2 Conformal adhesion promoter liner for metal interconnects 失效
标题翻译：用于金属互连的保形粘合促进剂衬垫
公开(公告)号：US08105937B2
公开(公告)日：2012-01-31
申请号：US12190906
申请日：2008-08-13
申请人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong , Huilong Zhu
发明人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong , Huilong Zhu
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76864 , H01L21/76868 , H01L21/76877 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.
摘要翻译：用至少一个线槽和/或至少一个通孔腔对电介质层进行构图。金属氮化物衬垫形成在图案化电介质层的表面上。在金属氮化物衬垫的表面上形成金属衬垫。通过原子层沉积（ALD）或化学气相沉积（CVD）直接在金属衬垫上形成共形的氮化铜层。在适形的氮化铜层上直接形成Cu籽晶层。至少一个线槽和/或至少一个通孔腔被电镀材料填充。保形氮化铜层和Cu籽晶层之间的直接接触提供了增强的粘合强度。可以将共形的氮化铜层退火以将暴露的外部部分翻转成连续的Cu层，其可用于减小Cu籽晶层的厚度。

3. 发明授权

US09017486B2 Deposition chamber cleaning method including stressed cleaning layer 有权
公开(公告)号：US09017486B2
公开(公告)日：2015-04-28
申请号：US12878128
申请日：2010-09-09
申请人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong
发明人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong
IPC分类号： B08B7/00 , B08B7/04 , C23C16/44 , C23C14/34
CPC分类号： B08B7/04 , B08B7/0014 , C23C14/34 , C23C16/4404
摘要： A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

4. 发明申请

US20120061234A1 Deposition Chamber Cleaning Method Including Stressed Cleaning Layer 有权
标题翻译：沉积室清洁方法包括压实清洁层
公开(公告)号：US20120061234A1
公开(公告)日：2012-03-15
申请号：US12878128
申请日：2010-09-09
申请人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong
发明人： Tien-Jen Cheng , Zhengwen Li , Keith Kwong Hon Wong
IPC分类号： B08B7/04 , C23C14/34 , C23C16/00
CPC分类号： B08B7/04 , B08B7/0014 , C23C14/34 , C23C16/4404
摘要： A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.
摘要翻译：清理沉积室的方法包括在沉积室的内表面上形成沉积层，其中沉积层具有沉积层应力和沉积层模量; 在所述沉积层上形成清洁层，其中选择包括所述清洁层的材料，使得所述清洁层粘附到所述沉积层，并且具有清洁层应力和清洁层模量，其中所述清洁层应力高于沉积层应力，并且其中所述清洁层模量高于所述沉积层模量; 以及从沉积室的内部去除沉积层和清洁层。

5. 发明授权

US08444868B2 Method for removing copper oxide layer 失效
标题翻译：去除氧化铜层的方法
公开(公告)号：US08444868B2
公开(公告)日：2013-05-21
申请号：US12695273
申请日：2010-01-28
申请人： Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
IPC分类号： C23F1/00
CPC分类号： H01L21/02074 , C23G5/00
摘要： The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.
摘要翻译：本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

6. 发明申请

US20110183520A1 Method for Removing Copper Oxide Layer 失效
标题翻译：去除氧化铜层的方法
公开(公告)号：US20110183520A1
公开(公告)日：2011-07-28
申请号：US12695273
申请日：2010-01-28
申请人： Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
IPC分类号： H01L21/306
CPC分类号： H01L21/02074 , C23G5/00
摘要： The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.
摘要翻译：本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

7. 发明申请

US20110162875A1 SELECTIVE COPPER ENCAPSULATION LAYER DEPOSITION 有权
标题翻译：选择铜包层沉积
公开(公告)号：US20110162875A1
公开(公告)日：2011-07-07
申请号：US12683857
申请日：2010-01-07
申请人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
IPC分类号： H05K1/09 , B05D5/12
CPC分类号： H01L21/76834 , H01L21/76826 , H01L21/76832 , H05K3/282 , H05K3/388 , H05K3/4682
摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.
摘要翻译：金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

8. 发明授权

US08415252B2 Selective copper encapsulation layer deposition 有权
标题翻译：选择性铜包层沉积
公开(公告)号：US08415252B2
公开(公告)日：2013-04-09
申请号：US12683857
申请日：2010-01-07
申请人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
发明人： Tien-Jen Cheng , Abhishek Dube , Zhengwen Li , Huilong Zhu
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76826 , H01L21/76832 , H05K3/282 , H05K3/388 , H05K3/4682
摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.
摘要翻译：金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

9. 发明授权

US07144490B2 Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer 有权
标题翻译：使用钛 - 钨种子层选择性地电镀半导体器件I / O焊盘的方法
公开(公告)号：US07144490B2
公开(公告)日：2006-12-05
申请号：US10707047
申请日：2003-11-18
申请人： Tien-Jen Cheng , David E. Eichstadt , Jonathan H. Griffith , Sarah H. Knickerbocker , Rosemary A. Previti-Kelly , Roger A. Quon , Kamalesh K. Srivastava , Keith Kwong-Hon Wong
发明人： Tien-Jen Cheng , David E. Eichstadt , Jonathan H. Griffith , Sarah H. Knickerbocker , Rosemary A. Previti-Kelly , Roger A. Quon , Kamalesh K. Srivastava , Keith Kwong-Hon Wong
IPC分类号： C25D5/02 , C25D7/12
CPC分类号： H01L24/13 , C25D5/022 , C25D5/12 , C25D7/123 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05558 , H01L2224/05562 , H01L2224/05644 , H01L2224/1147 , H01L2224/1148 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2224/29099 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
摘要： A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.
摘要翻译：一种用于半导体输入/输出（I / O）焊盘的选择性电镀的方法包括在半导体衬底上的钝化层上形成钛 - 钨（TiW）层，所述TiW层进一步延伸到形成在钝化层中的开口中暴露I / O焊盘，使得TiW层覆盖开口的侧壁和I / O焊盘的顶表面。在TiW层上形成种子层，并且选择性地去除种子层的部分，使得剩余的种子层材料对应于用于I / O焊盘的互连冶金的期望位置。使用TiW层作为导电电镀介质，在剩余的种子层材料上电镀至少一层金属层。

10. 发明授权

US06896784B2 Method for controlling local current to achieve uniform plating thickness 失效
标题翻译：控制局部电流达到均匀电镀厚度的方法
公开(公告)号：US06896784B2
公开(公告)日：2005-05-24
申请号：US10868723
申请日：2004-06-15
申请人： Tien-Jen Cheng , Todd M. Fowler , Ajay P. Giri , Anton Nenadic , Blessen Samuel , Keith Kwong Hon Wong
发明人： Tien-Jen Cheng , Todd M. Fowler , Ajay P. Giri , Anton Nenadic , Blessen Samuel , Keith Kwong Hon Wong
IPC分类号： C25D7/12 , C25D5/00 , C25D5/02 , C25D17/10 , C25D17/12 , C25D21/12 , H01L21/288 , H05K3/24
CPC分类号： H01L21/2885 , C25D5/02 , C25D17/001 , C25D17/007 , C25D17/10 , C25D17/12 , H05K3/241
摘要： A process for electroplating metallic features of different density on a surface of a substrate comprises providing an electroplating bath having an anode, immersing the substrate into the electroplating bath, spaced from the anode, the substrate comprising a cathode. Positioned in the electroplating bath between the substrate and the anode, and adjacent to and separated from the substrate surface is a second cathode that includes a wire mesh screening portion having openings of different sizes conforming to the metallic features to be electroplated. The second cathode screening portion has openings of larger size adjacent areas of higher density of features to be electroplated and openings of smaller size adjacent areas of lower density of features to be electroplated. The process further includes impressing a current through the electroplating bath between the substrate and the anode, and between the second cathode and the anode, and electroplating the metallic features of different density onto the substrate.
摘要翻译：一种用于在基片表面上电镀不同密度的金属特征的方法包括提供具有阳极的电镀浴，将基底浸入与阳极间隔开的电镀浴中，该基底包括阴极。位于基板和阳极之间并且与基板表面相邻并与基板表面分离的电镀槽中的电镀槽是包括具有不同尺寸的开口的金属丝网筛分部分的第二阴极，其符合要电镀的金属特征。第二阴极屏蔽部分具有较大尺寸的具有更高密度特征的相邻区域的开口，以进行电镀，并且要电镀较低密度特征的较小尺寸的相邻区域的开口。该方法进一步包括通过电镀浴在基板和阳极之间以及在第二阴极和阳极之间施加电流，并将不同密度的金属特征电镀到基板上。

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