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1. 发明授权

US09056763B2 Stress buffer layer for integrated microelectromechanical systems (MEMS) 有权
标题翻译：用于集成微机电系统（MEMS）的应力缓冲层
公开(公告)号：US09056763B2
公开(公告)日：2015-06-16
申请号：US14039157
申请日：2013-09-27
申请人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
发明人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
IPC分类号： H01L23/02 , B81C1/00 , B81B7/00
CPC分类号： B81C1/00666 , B81B7/0054 , B81C1/00261 , B81C1/00349 , B81C2203/0136 , B81C2203/0154 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/12105 , H01L2224/16145 , H01L2224/24137 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73207 , H01L2224/73259 , H01L2224/73265 , H01L2224/73277 , H01L2924/1461 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.
摘要翻译：描述了用于集成微机电系统（MEMS）的应力缓冲层。例如，半导体封装包括具有第一和第二表面的衬底，第二表面具有外部导电触点阵列。微机电系统（MEMS）部件设置在基板的第一表面上方。缓冲层设置在MEMS部件上方，缓冲层具有第一杨氏模量。模具化合物设置在缓冲层上方，模塑料具有高于第一杨氏模量的第二杨氏模量。

2. 发明申请

US20150091167A1 STRESS BUFFER LAYER FOR INTEGRATED MICROELECTROMECHANICAL SYSTEMS (MEMS) 有权
公开(公告)号：US20150091167A1
公开(公告)日：2015-04-02
申请号：US14039157
申请日：2013-09-27
申请人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
发明人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00666 , B81B7/0054 , B81C1/00261 , B81C1/00349 , B81C2203/0136 , B81C2203/0154 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/12105 , H01L2224/16145 , H01L2224/24137 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73207 , H01L2224/73259 , H01L2224/73265 , H01L2224/73277 , H01L2924/1461 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.

3. 发明申请

US20140361387A1 CHIP ARRANGEMENT AND METHOD FOR MANUFACTURING A CHIP ARRANGEMENT 有权
标题翻译：芯片布置和制造芯片布置方法
公开(公告)号：US20140361387A1
公开(公告)日：2014-12-11
申请号：US13910133
申请日：2013-06-05
申请人： Thorsten Meyer , Gerald Ofner , Christian Mueller , Reinhard Mahnkopf , Christian Geissler , Andreas Augustin
发明人： Thorsten Meyer , Gerald Ofner , Christian Mueller , Reinhard Mahnkopf , Christian Geissler , Andreas Augustin
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0077 , B81B7/007 , B81B2207/012 , B81B2207/095 , B81C1/00333 , H01L24/19 , H01L2224/04105 , H01L2224/12105 , H01L2224/16146 , H01L2224/16227 , H01L2224/24137 , H01L2224/32145 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/73259 , H01L2224/73267 , H01L2924/1431 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip arrangement may include: a mold compound; and a microelectromechanical systems device at least partially embedded in the mold compound.
摘要翻译：芯片布置可以包括：模具化合物; 以及至少部分地嵌入模具化合物中的微机电系统装置。

4. 发明申请

US20150266728A1 STRESS BUFFER LAYER FOR INTEGRATED MICROELECTROMECHANICAL SYSTEMS (MEMS) 审中-公开
标题翻译：集成微电子系统（MEMS）应力缓冲层
公开(公告)号：US20150266728A1
公开(公告)日：2015-09-24
申请号：US14731211
申请日：2015-06-04
申请人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
发明人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
IPC分类号： B81C1/00
CPC分类号： B81C1/00666 , B81B7/0054 , B81C1/00261 , B81C1/00349 , B81C2203/0136 , B81C2203/0154 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/12105 , H01L2224/16145 , H01L2224/24137 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73207 , H01L2224/73259 , H01L2224/73265 , H01L2224/73277 , H01L2924/1461 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.
摘要翻译：描述了用于集成微机电系统（MEMS）的应力缓冲层。例如，半导体封装包括具有第一和第二表面的衬底，第二表面具有外部导电触点阵列。微机电系统（MEMS）部件设置在基板的第一表面上方。缓冲层设置在MEMS部件上方，缓冲层具有第一杨氏模量。模具化合物设置在缓冲层上方，模塑料具有高于第一杨氏模量的第二杨氏模量。

5. 发明申请

US20140264832A1 CHIP ARRANGEMENTS 有权
标题翻译：芯片安排
公开(公告)号：US20140264832A1
公开(公告)日：2014-09-18
申请号：US13802848
申请日：2013-03-14
申请人： Thorsten Meyer , Hans-Joachim Barth , Reinhard Mahnkopf , Sven Albers , Andreas Augustin , Christian Mueller
发明人： Thorsten Meyer , Hans-Joachim Barth , Reinhard Mahnkopf , Sven Albers , Andreas Augustin , Christian Mueller
IPC分类号： H01L23/00
CPC分类号： H01L24/17 , H01L23/5256 , H01L23/5382 , H01L25/0657 , H01L2224/02379 , H01L2224/0401 , H01L2224/0557 , H01L2224/131 , H01L2224/16146 , H01L2224/1703 , H01L2224/17107 , H01L2224/17154 , H01L2224/17181 , H01L2224/17517 , H01L2224/81193 , H01L2924/12042 , H01L2924/014 , H01L2924/00
摘要： A chip arrangement may include: a first chip including a first contact, a second contact, and a redistribution structure electrically coupling the first contact to the second contact; a second chip including a contact; and a plurality of interconnects electrically coupled to the second contact of the first chip, wherein at least one interconnect of the plurality of interconnects electrically couples the second contact of the first chip to the contact of the second chip.
摘要翻译：芯片布置可以包括：第一芯片，其包括第一触点，第二触点和将第一触点电耦合到第二触点的再分配结构; 包括触点的第二芯片; 以及电耦合到第一芯片的第二触点的多个互连，其中多个互连件中的至少一个互连将第一芯片的第二触点电耦合到第二芯片的触点。

6. 发明申请

US20140252632A1 SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140252632A1
公开(公告)日：2014-09-11
申请号：US13786538
申请日：2013-03-06
申请人： Hans-Joachim Barth , Reinhard Mahnkopf , Thorsten Meyer , Sven Albers , Andreas Augustin , Christian Mueller
发明人： Hans-Joachim Barth , Reinhard Mahnkopf , Thorsten Meyer , Sven Albers , Andreas Augustin , Christian Mueller
IPC分类号： H01L23/538
CPC分类号： H01L23/5384 , H01L23/49816 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/19 , H01L25/0657 , H01L25/18 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05647 , H01L2224/12105 , H01L2224/13025 , H01L2224/131 , H01L2224/13147 , H01L2224/16146 , H01L2224/16227 , H01L2224/1703 , H01L2224/17181 , H01L2224/2518 , H01L2224/32225 , H01L2224/73204 , H01L2224/73259 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06548 , H01L2924/00014 , H01L2924/1421 , H01L2924/1431 , H01L2924/1432 , H01L2924/1434 , H01L2924/1436 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2224/16225 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes: a semiconductor chip; an extension layer extending laterally from a boundary of the semiconductor chip; a redistribution layer disposed over at least one side of the extension layer and the semiconductor chip, wherein the redistribution layer electrically couples at least one contact of the semiconductor chip to at least one contact of an interface, wherein at least a part of the interface extends laterally beyond the boundary of the semiconductor chip.
摘要翻译：半导体器件包括：半导体芯片; 延伸层，其从半导体芯片的边界横向延伸; 重新分配层，其设置在所述延伸层和所述半导体芯片的至少一侧上，其中所述再分配层将所述半导体芯片的至少一个触点电耦合到界面的至少一个触点，其中所述界面的至少一部分延伸横向超出半导体芯片的边界。

7. 发明授权

US09226976B2 RAAV-based compositions and methods for treating alpha-1 anti-trypsin deficiencies 有权
标题翻译：用于治疗α-1抗胰蛋白酶缺乏症的基于RAAV的组合物和方法
公开(公告)号：US09226976B2
公开(公告)日：2016-01-05
申请号：US14113118
申请日：2012-04-20
申请人： Terence Flotte , Christian Mueller
发明人： Terence Flotte , Christian Mueller
IPC分类号： C07H21/02 , C07H21/04 , A61K48/00 , A61K35/00 , C12N15/67 , C12N15/11
CPC分类号： C12N15/86 , A61K31/713 , A61K35/12 , A61K38/57 , A61K48/005 , A61K48/0058 , C07K14/8125 , C12N7/00 , C12N15/111 , C12N15/113 , C12N15/67 , C12N2310/141 , C12N2310/3519 , C12N2320/31 , C12N2750/14121 , C12N2750/14132 , C12N2750/14143
摘要： The invention relates to isolated nucleic acids and rAAV-based compositions, methods and kits useful for treating genetic diseases (e.g., alpha-1 antitrypsin deficiency).
摘要翻译：本发明涉及分离的核酸和基于rAAV的组合物，用于治疗遗传疾病（例如α-1抗胰蛋白酶缺乏症）的方法和试剂盒。

8. 发明授权

US08909730B2 Method of controlling filling levels of a plurality of storage pools 有权
标题翻译：控制多个存储池的填充水平的方法
公开(公告)号：US08909730B2
公开(公告)日：2014-12-09
申请号：US12443533
申请日：2007-06-28
申请人： Fabian Kuhl , Christian Mueller
发明人： Fabian Kuhl , Christian Mueller
IPC分类号： G06F15/16 , H04L29/08 , G06F17/30 , G06F3/06
CPC分类号： G06F17/30073 , G06F3/0688 , G06F17/30153 , G06F17/30221 , H04L67/1097
摘要： Method, system, and computer program product embodiments of controlling filling levels of a plurality of storage pools are provided. A plurality of files is selected from each storage pool of the plurality of storage pools. Each file is then copied to a server and a list is updated. The list comprises an entry for each file of the plurality of files. Each entry comprises a status information. The status information indicates that the corresponding file has been copied to the server. Each entry further comprises an identifier indicating the storage pool on which the corresponding file is stored. If it is detected that the filling level of a storage pool reaches a predefined first threshold value, then a first set of files is determined by use of the list. Each file of the first set of files is replaced by a stub file. The status information is updated.
摘要翻译：提供了控制多个存储池的填充水平的方法，系统和计算机程序产品实施例。从多个存储池的每个存储池中选择多个文件。然后将每个文件复制到服务器并更新列表。该列表包括多个文件中的每个文件的条目。每个条目包括状态信息。状态信息表示相应的文件已被复制到服务器。每个条目还包括指示存储对应文件的存储池的标识符。如果检测到存储池的填充级别达到预定义的第一阈值，则通过使用该列表来确定第一组文件。第一组文件的每个文件都被一个存根文件替换。状态信息被更新。

9. 发明申请

US20130323657A1 METHOD AND APPARATUS FOR CONTROLLING COMBUSTION IN A COMBUSTION BOILER 审中-公开
标题翻译：用于控制燃烧锅炉中燃烧的方法和装置
公开(公告)号：US20130323657A1
公开(公告)日：2013-12-05
申请号：US13988151
申请日：2011-11-23
申请人： Ralph Ludwig , Christian Mueller
发明人： Ralph Ludwig , Christian Mueller
IPC分类号： F23N3/00
CPC分类号： F23N3/002 , F23G5/50 , F23G2207/103 , F23G2207/113 , F23G2207/30 , F23N1/002 , F23N5/006
摘要： A technique for controlling the combustion of fuel in a combustion boiler, comprising at least the following steps: a) a desired combustion air quantity for the combustion of the fuel in the combustion boiler is determined, b) a combustion air quantity which is available for the combustion of the fuel in the combustion boiler is determined, c) at least one combustion air inflow is controlled by at least one material output opening or at least one appliance opening in the combustion boiler, in order to at least partially match the combustion air quantity available in the combustion boiler to the desired combustion air quantity.
摘要翻译：一种用于控制燃烧锅炉中的燃料燃烧的技术，包括至少以下步骤：a）确定用于燃烧锅炉中的燃料燃烧的期望的燃烧空气量，b）燃烧空气量，其可用于确定燃烧锅炉中的燃料的燃烧，c）至少一个燃烧空气流入通过燃烧锅炉中的至少一个材料输出开口或至少一个电器开口来控制，以便至少部分地匹配燃烧空气燃烧锅炉中的可用量达到所需的燃烧空气量。

10. 发明授权

US08334599B2 Electronic device having a chip stack 有权
标题翻译：具有芯片堆叠的电子设备
公开(公告)号：US08334599B2
公开(公告)日：2012-12-18
申请号：US12196215
申请日：2008-08-21
申请人： Michael Bruennert , Ullrich Menczigar , Christian Mueller , Sitt Tontosirin , Hermann Ruckerbauer
发明人： Michael Bruennert , Ullrich Menczigar , Christian Mueller , Sitt Tontosirin , Hermann Ruckerbauer
IPC分类号： H01L23/538
CPC分类号： H01L23/525 , H01L23/481 , H01L25/0657 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05571 , H01L2224/056 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05099
摘要： An electronic device provides a stack of semiconductor chips. A redistribution layer of a first semiconductor chip is arranged at the bottom of the stack. The redistribution layer of the first semiconductor chip comprises external pads.
摘要翻译：电子设备提供一堆半导体芯片。第一半导体芯片的再分配层布置在堆叠的底部。第一半导体芯片的再分布层包括外部焊盘。

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