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1. 发明授权

US08871607B2 Method for producing hybrid components 有权
标题翻译：混合组分的制备方法
公开(公告)号：US08871607B2
公开(公告)日：2014-10-28
申请号：US12663096
申请日：2008-06-06
申请人： Thomas Signamarcheix , Franck Fournel , Hubert Moriceau
发明人： Thomas Signamarcheix , Franck Fournel , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/8238 , H01L21/762 , H01L21/8258 , H01L21/84
CPC分类号： H01L21/8258 , H01L21/76254 , H01L21/823807 , H01L21/823878 , H01L21/84
摘要： A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.
摘要翻译：一种制造混合基板的方法，包括支撑基板，连续埋层绝缘体层，并且在该连续层上，包括第一材料和至少一种第二材料的交替区域的混合层，其中这两种材料由它们性质和/或其晶体学特征。该方法形成混合层，包括在均匀基底上的第一和第二材料的交替区，组装该混合层，连续绝缘体层和支撑衬底，并且在第一和第二材料之前或之后形成至少均匀的衬底的部分组装。

2. 发明申请

US20110163410A1 METHOD FOR PRODUCING HYBRID COMPONENTS 有权
标题翻译：生产混合组分的方法
公开(公告)号：US20110163410A1
公开(公告)日：2011-07-07
申请号：US12663096
申请日：2008-06-06
申请人： Thomas Signamarcheix , Franck Fournel , Hubert Moriceau
发明人： Thomas Signamarcheix , Franck Fournel , Hubert Moriceau
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/8258 , H01L21/76254 , H01L21/823807 , H01L21/823878 , H01L21/84
摘要： A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.
摘要翻译：一种制造混合基板的方法，包括支撑基板，连续埋层绝缘体层，并且在该连续层上，包括第一材料和至少一种第二材料的交替区域的混合层，其中这两种材料由它们性质和/或其晶体学特征。该方法形成混合层，包括在均匀基底上的第一和第二材料的交替区，组装该混合层，连续绝缘体层和支撑衬底，并且在第一和第二材料之前或之后形成至少均匀的衬底的部分组装。

3. 发明授权

US06991944B2 Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials 有权
标题翻译：由选自半导体材料的材料层形成的多层晶片的表面处理
公开(公告)号：US06991944B2
公开(公告)日：2006-01-31
申请号：US10915769
申请日：2004-08-10
申请人： Olivier Rayssac , Beryl Blondeau , Hubert Moriceau , Christelle Lagahe-Blanchard , Franck Fournel
发明人： Olivier Rayssac , Beryl Blondeau , Hubert Moriceau , Christelle Lagahe-Blanchard , Franck Fournel
IPC分类号： H01L21/302
CPC分类号： H01L21/2007 , H01L21/02032 , H01L21/76254 , Y10S438/974
摘要： This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.
摘要翻译：本发明涉及一种用具有不同热特性的材料处理多层晶片的方法，该方法包括可产生二次缺陷的高温热处理步骤，其特征在于该方法包括在高温之前的晶片表面制备步骤温度热处理步骤。

4. 发明申请

US20050130429A1 Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials 有权
标题翻译：由选自半导体材料的材料层形成的多层晶片的表面处理
公开(公告)号：US20050130429A1
公开(公告)日：2005-06-16
申请号：US10915769
申请日：2004-08-10
申请人： Olivier Rayssac , Beryl Blondeau , Hubert Moriceau , Christelle Lagahe-Blanchard , Franck Fournel
发明人： Olivier Rayssac , Beryl Blondeau , Hubert Moriceau , Christelle Lagahe-Blanchard , Franck Fournel
IPC分类号： H01L21/20 , H01L21/762 , H01L21/302
CPC分类号： H01L21/2007 , H01L21/02032 , H01L21/76254 , Y10S438/974
摘要： This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.
摘要翻译：本发明涉及一种用具有不同热特性的材料处理多层晶片的方法，该方法包括可产生二次缺陷的高温热处理步骤，其特征在于该方法包括在高温之前的晶片表面制备步骤温度热处理步骤。

5. 发明申请

US20050101095A1 Method for producing a stacked structure 有权
标题翻译：叠层结构体的制造方法
公开(公告)号：US20050101095A1
公开(公告)日：2005-05-12
申请号：US10450528
申请日：2001-12-27
申请人： Franck Fournel , Hubert Moriceau , Marc Zussy , Noel Magnea
发明人： Franck Fournel , Hubert Moriceau , Marc Zussy , Noel Magnea
IPC分类号： H01L27/12 , H01L21/02 , H01L21/18 , H01L21/762 , H01L21/336
CPC分类号： H01L21/187 , H01L21/76251
摘要： Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.
摘要翻译：通过从相同的初始结构中分离出至少两个结晶部分来制造层叠结构的方法，每个结晶部分具有通过与初始结构的参考晶面具有倾斜角度的分离产生的一个面。结构由结晶部分形成，每个结构具有相对于相应结晶部分的产生面的倾斜角具有受控倾斜角的待组装面。结构被组装，同时控制它们在界面平面中相对于初始结构内的各结晶部分的相对位置旋转的相对位置，以在结构之间的界面处获得受控的所得到的倾斜角。该方法可以特别在微电子学，光学和光电子学中得到应用。

6. 发明授权

US06724017B2 Method for automatic organization of microstructures or nanostructures and related device obtained 有权
标题翻译：自动组织微结构或纳米结构的方法及相关装置
公开(公告)号：US06724017B2
公开(公告)日：2004-04-20
申请号：US10381212
申请日：2003-03-28
申请人： Marie-Noëlle Semeria , Pierre Mur , Franck Fournel , Hubert Moriceau , Hubert Eymery , Noël Magnea , Thierry Baron , François Martin
发明人： Marie-Noëlle Semeria , Pierre Mur , Franck Fournel , Hubert Moriceau , Hubert Eymery , Noël Magnea , Thierry Baron , François Martin
IPC分类号： H01L31109
CPC分类号： C23C16/0272 , C23C14/024 , C30B25/02 , C30B29/605
摘要： The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises: a) a substrate (1) comprising at least one part composed of a crystalline material, this part having a surface (2) with a stress field or a topology associated with a stress field, the stress field being associated with dislocations, b) an intermediate layer (3) bonded to the surface (2), and having a thickness and/or composition and/or a surface state enabling transmission of said stress field through this layer as far as its free face that supports microstructures or nanostructures (4).
摘要翻译：本发明涉及一种在载体上包含微结构或纳米结构的装置，其特征在于，所述载体包括：a）基材（1），其包含由结晶材料组成的至少一部分，该部分具有应力的表面（2）场或与应力场相关联的拓扑，所述应力场与位错相关联，b）结合到所述表面（2）的中间层（3），并且具有能够传输的厚度和/或组成和/或表面状态的所述应力场通过该层直到其支撑微结构或纳米结构的自由面（4）。

7. 发明授权

US07781300B2 Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areas 有权
标题翻译：用于制造混合堆叠结构，不同绝缘区域和/或局部垂直导电区域的方法
公开(公告)号：US07781300B2
公开(公告)日：2010-08-24
申请号：US11576743
申请日：2005-10-06
申请人： Hubert Moriceau , Franck Fournel , Christophe Morales
发明人： Hubert Moriceau , Franck Fournel , Christophe Morales
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/76224
摘要： The invention relates to a method for producing a semiconducting structure including: controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.
摘要翻译：本发明涉及一种用于制造半导体结构的方法，包括：通过掩模（31）在绝缘材料（36）中的至少一个第一区域的半导体材料的第一衬底（30）中控制形成到达掩模的下表面（35）的水平面前，或在去除掩模期间。

8. 发明授权

US07494897B2 Method of producing mixed substrates and structure thus obtained 有权
标题翻译：制备混合基材的方法和由此获得的结构
公开(公告)号：US07494897B2
公开(公告)日：2009-02-24
申请号：US10540303
申请日：2003-12-22
申请人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
发明人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
IPC分类号： H01L21/30
CPC分类号： H01L21/76264 , H01L21/187 , H01L21/76275
摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.
摘要翻译：本发明的方法包括一个制备步骤，在该步骤中衬底被一层覆盖，一个压制步骤，其中将包括凹凸图案的模具压入上述层的厚度的一部分中，至少一个蚀刻步骤，其中蚀刻该层，直到基板的表面的一部分被剥离，以及基板蚀刻步骤，由此使用从模具图案限定的蚀刻图案来蚀刻该基板。制备步骤包括由可固化材料的下层形成的子步骤，涉及所述层的固化的步骤和包括形成邻近固化的外部亚层的子步骤子层。此外，在挤压步骤中，模具中的上述突起穿透外部子层，直到与固化的子层接触。

9. 发明申请

US20060166461A1 Method of producing mixed substrates and structure thus obtained 有权
公开(公告)号：US20060166461A1
公开(公告)日：2006-07-27
申请号：US10540303
申请日：2003-12-22
申请人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
发明人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76264 , H01L21/187 , H01L21/76275
摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

10. 发明授权

US08207048B2 Method for producing ordered nanostructures 失效
标题翻译：生产有序纳米结构的方法
公开(公告)号：US08207048B2
公开(公告)日：2012-06-26
申请号：US11612829
申请日：2006-12-19
申请人： Franck Fournel , Hubert Moriceau , Chrystel Deguet
发明人： Franck Fournel , Hubert Moriceau , Chrystel Deguet
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , B81C1/00031 , H01L21/76254
摘要： Method for producing nanostructures comprising: a step of providing a substrate (100) having a buried barrier layer (2) and above said barrier layer (2) a crystalline film (5) provided with a network of crystalline defects and/or stress fields (12) in a crystalline zone (13), one or several steps of attacking the substrate (100), of which a preferential attack either of the crystalline defects and/or the stress fields, or the crystalline zone (13) between the crystalline defects and/or the stress fields, said attack steps enabling the barrier layer (2) to be laid bared locally and protrusions (7) to be formed on a nanometric scale, separated from each other by hollows (7.1) having a base located in the barrier layer, the protrusions leading to nanostructures (7, 8).
摘要翻译：一种生产纳米结构的方法，包括：提供具有掩埋阻挡层（2）和所述阻挡层（2）上方的衬底（100）的步骤，所述结晶膜（5）具有晶体缺陷和/或应力场网络 12）在结晶区域（13）中，攻击衬底（100）的一个或几个步骤，其中晶体缺陷和/或应力场的优先攻击或晶体缺陷之间的结晶区域（13）和/或应力场，所述攻击步骤使得阻挡层（2）能够局部放置并且以纳米尺度形成突起（7），所述突起（7）通过具有位于阻挡层，导致纳米结构的突起（7,8）。

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