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1. 发明授权

US08717015B2 Linear-with-magnetic field magnetoresistance device 有权
标题翻译：线性磁场磁阻器件
公开(公告)号：US08717015B2
公开(公告)日：2014-05-06
申请号：US12704775
申请日：2010-02-12
申请人： Chinwuba Ezekwe , Thomas Rocznik , Christoph Lang , Sam Kavusi , Martin Kramer
发明人： Chinwuba Ezekwe , Thomas Rocznik , Christoph Lang , Sam Kavusi , Martin Kramer
IPC分类号： G01R33/06
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic field measuring system is disclosed. The magnetic field measuring system includes a substrate, a conductive well formed in the substrate, the well having a first side with a first length, a first contact electrically coupled to the conductive well at a first location of the first side, a second contact electrically coupled to the conductive well at a second location of the first side, wherein the distance between the first location and the second location is less than the first length, a stimulus circuit coupled to the first contact and the second contact, and a sensor for identifying a property indicative of the length of a current path from the first location to the second location through the conductive well.
摘要翻译：公开了一种磁场测量系统。所述磁场测量系统包括衬底，在所述衬底中形成的导电阱，所述阱具有第一长度的第一侧，在所述第一侧的第一位置处电耦合到所述导电阱的第一接触，在所述第一侧的第二位置处耦合到所述导电阱，其中所述第一位置和所述第二位置之间的距离小于所述第一长度，耦合到所述第一接触和所述第二接触的刺激电路，以及用于识别指示通过导电井从第一位置到第二位置的电流路径的长度的特性。

2. 发明申请

US20100219810A1 VERTICAL HALL EFFECT SENSOR WITH CURRENT FOCUS 有权
标题翻译：垂直霍尔效应传感器与当前聚焦
公开(公告)号：US20100219810A1
公开(公告)日：2010-09-02
申请号：US12396288
申请日：2009-03-02
申请人： Thomas Rocznik , Christoph Lang , Sam Kavusi
发明人： Thomas Rocznik , Christoph Lang , Sam Kavusi
IPC分类号： H01L43/06 , H01L27/092 , H01L21/22
CPC分类号： H01L43/065 , G01R33/07 , G01R33/077 , H01L43/14
摘要： A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped substrate, a doped central island extending downwardly within the doped substrate from an upper surface of the doped substrate, and a first doped outer island extending downwardly within the doped substrate from the upper surface of the doped substrate, the first outer island electrically isolated from the central island within an upper portion of the substrate, and electrically coupled to the central island within a lower portion of the substrate.
摘要翻译：在一个实施例中，互补金属氧化物半导体（CMOS）传感器系统包括掺杂衬底，在掺杂衬底内从掺杂衬底的上表面向下延伸的掺杂中心岛，以及在掺杂衬底内向下延伸的第一掺杂外部岛，掺杂衬底的上表面，第一外岛与衬底的上部内的中心岛电隔离，并且电耦合到衬底的下部内的中心岛。

3. 发明申请

US20100145657A1 INTEGRATED SENSOR ARRAY WITH OFFSET REDUCTION 有权
标题翻译：集成传感器阵列与偏移减少
公开(公告)号：US20100145657A1
公开(公告)日：2010-06-10
申请号：US12329961
申请日：2008-12-08
申请人： Sam Kavusi , Christoph Lang , Thomas Rocznik , Chinwuba Ezekwe
发明人： Sam Kavusi , Christoph Lang , Thomas Rocznik , Chinwuba Ezekwe
IPC分类号： G06F19/00 , H01L29/66
CPC分类号： G01R33/0029 , G01D18/008 , G01R33/072 , G01R33/075
摘要： A method and system for providing increased accuracy in a CMOS sensor system in one embodiment includes a plurality of sensor elements having a first terminal and a second terminal on a complementary metal oxide semiconductor substrate, a first plurality of switches configured to selectively connect the first terminal to a power source and to selectively connect the first terminal to a readout circuit, and a second plurality of switches configured to selectively connect the second terminal to the power source and to selectively connect the second terminal to the readout circuit.
摘要翻译：在一个实施例中，在CMOS传感器系统中提供更高精度的方法和系统包括多个传感器元件，其具有在互补金属氧化物半导体衬底上的第一端子和第二端子，第一多个开关被配置为选择性地将第一端子并且将第一端子选择性地连接到读出电路，以及第二多个开关，其被配置为选择性地将第二端子连接到电源并且将第二端子选择性地连接到读出电路。

4. 发明授权

US08093891B2 Vertical Hall Effect sensor 有权
标题翻译：垂直霍尔效应传感器
公开(公告)号：US08093891B2
公开(公告)日：2012-01-10
申请号：US12396204
申请日：2009-03-02
申请人： Thomas Rocznik , Christoph Lang , Sam Kavusi
发明人： Thomas Rocznik , Christoph Lang , Sam Kavusi
IPC分类号： G01R33/06
CPC分类号： H01L43/065 , G01R33/07 , G01R33/077
摘要： A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.
摘要翻译：在一个实施例中，互补的金属氧化物半导体（CMOS）传感器系统包括沿着掺杂衬底的第一轴延伸的掺杂阱，位于掺杂阱内的第一电触点，位于掺杂阱内并与之隔开的第二电触点沿着第一轴线的第一电触头，位于掺杂阱内并位于第一电触点和第二电触点之间的第三电触头沿着第一轴线，以及第四电触点，其电耦合到位于掺杂深度低于第三电接触。

5. 发明授权

US09274179B2 Integrated sensor array with offset reduction 有权
标题翻译：具有偏移减少的集成传感器阵列
公开(公告)号：US09274179B2
公开(公告)日：2016-03-01
申请号：US12329961
申请日：2008-12-08
申请人： Sam Kavusi , Christoph Lang , Thomas Rocznik , Chinwuba Ezekwe
发明人： Sam Kavusi , Christoph Lang , Thomas Rocznik , Chinwuba Ezekwe
IPC分类号： G01D18/00 , G01R33/00 , G01R33/07
CPC分类号： G01R33/0029 , G01D18/008 , G01R33/072 , G01R33/075
摘要： A method and system for providing increased accuracy in a CMOS sensor system in one embodiment includes a plurality of sensor elements having a first terminal and a second terminal on a complementary metal oxide semiconductor substrate, a first plurality of switches configured to selectively connect the first terminal to a power source and to selectively connect the first terminal to a readout circuit, and a second plurality of switches configured to selectively connect the second terminal to the power source and to selectively connect the second terminal to the readout circuit.
摘要翻译：在一个实施例中，在CMOS传感器系统中提供更高精度的方法和系统包括多个传感器元件，其具有在互补金属氧化物半导体衬底上的第一端子和第二端子，第一多个开关被配置为选择性地将第一端子并且将第一端子选择性地连接到读出电路，以及第二多个开关，其被配置为选择性地将第二端子连接到电源并且将第二端子选择性地连接到读出电路。

6. 发明申请

US20100219821A1 VERTICAL HALL EFFECT SENSOR 有权
标题翻译：垂直霍尔效应传感器
公开(公告)号：US20100219821A1
公开(公告)日：2010-09-02
申请号：US12396204
申请日：2009-03-02
申请人： Thomas Rocznik , Christoph Lang , Sam Kavusi
发明人： Thomas Rocznik , Christoph Lang , Sam Kavusi
IPC分类号： G01R33/06 , H01L47/00
CPC分类号： H01L43/065 , G01R33/07 , G01R33/077
摘要： A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.
摘要翻译：在一个实施例中，互补的金属氧化物半导体（CMOS）传感器系统包括沿着掺杂衬底的第一轴延伸的掺杂阱，位于掺杂阱内的第一电触点，位于掺杂阱内并与之隔开的第二电触点沿着第一轴线的第一电触头，位于掺杂阱内并位于第一电触点和第二电触点之间的第三电触头沿着第一轴线，以及第四电触点，其电耦合到位于掺杂深度低于第三电接触。

7. 发明授权

US08114684B2 Vertical hall effect sensor with current focus 有权
标题翻译：垂直霍尔效应传感器与当前焦点
公开(公告)号：US08114684B2
公开(公告)日：2012-02-14
申请号：US12396288
申请日：2009-03-02
申请人： Thomas Rocznik , Christoph Lang , Sam Kavusi
发明人： Thomas Rocznik , Christoph Lang , Sam Kavusi
IPC分类号： H01L29/82 , H01L21/8238
CPC分类号： H01L43/065 , G01R33/07 , G01R33/077 , H01L43/14
摘要： A complementary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped substrate, a doped central island extending downwardly within the doped substrate from an upper surface of the doped substrate, and a first doped outer island extending downwardly within the doped substrate from the upper surface of the doped substrate, the first outer island electrically isolated from the central island within an upper portion of the substrate, and electrically coupled to the central island within a lower portion of the substrate.
摘要翻译：在一个实施例中，互补金属氧化物半导体（CMOS）传感器系统包括掺杂衬底，在掺杂衬底内从掺杂衬底的上表面向下延伸的掺杂中心岛，以及在掺杂衬底内向下延伸的第一掺杂外部岛，掺杂衬底的上表面，第一外岛与衬底的上部内的中心岛电隔离，并且电耦合到衬底的下部内的中心岛。

8. 发明申请

US20110199078A1 LINEAR-WITH-MAGNETIC FIELD MAGNETORESISTANCE DEVICE 有权
标题翻译：线性磁场磁阻器件
公开(公告)号：US20110199078A1
公开(公告)日：2011-08-18
申请号：US12704775
申请日：2010-02-12
申请人： Chinwuba Ezekwe , Thomas Rocznik , Christoph Lang , Sam Kavusi , Martin Krämer
发明人： Chinwuba Ezekwe , Thomas Rocznik , Christoph Lang , Sam Kavusi , Martin Krämer
IPC分类号： G01R33/09 , G01R19/145 , G06F19/00
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic field measuring system is disclosed. The magnetic field measuring system includes a substrate, a conductive well formed in the substrate, the well having a first side with a first length, a first contact electrically coupled to the conductive well at a first location of the first side, a second contact electrically coupled to the conductive well at a second location of the first side, wherein the distance between the first location and the second location is less than the first length, a stimulus circuit coupled to the first contact and the second contact, and a sensor for identifying a property indicative of the length of a current path from the first location to the second location through the conductive well.
摘要翻译：公开了一种磁场测量系统。所述磁场测量系统包括衬底，在所述衬底中形成的导电阱，所述阱具有第一长度的第一侧，在所述第一侧的第一位置处电耦合到所述导电阱的第一接触，在所述第一侧的第二位置处耦合到所述导电阱，其中所述第一位置和所述第二位置之间的距离小于所述第一长度，耦合到所述第一接触和所述第二接触的刺激电路，以及用于识别指示通过导电井从第一位置到第二位置的电流路径的长度的特性。

9. 发明授权

US11275084B2 Successive sampling device and associated method 有权
公开(公告)号：US11275084B2
公开(公告)日：2022-03-15
申请号：US12688193
申请日：2010-01-15
申请人： Sam Kavusi , Daniel Roser , Christoph Lang , AmirAli Haj Hossein Talasaz
发明人： Sam Kavusi , Daniel Roser , Christoph Lang , AmirAli Haj Hossein Talasaz
IPC分类号： B01L3/00 , G01N33/543 , C12Q1/6816
摘要： A method of determining a number of a solution constituent includes introducing a first number of solution constituents to a first test location, establishing a first binding environment for the introduced first number of solution constituents, creating a first residual number of solution constituents by binding a first plurality of solution constituents, establishing a second binding environment for the first residual number of solution constituents, creating a second residual number of solution constituents by binding a second plurality of solution constituents from the first residual number of solution constituents, obtaining a first signal associated with the bound first plurality of solution constituents, obtaining a second signal associated with the bound second plurality of solution constituents, and determining a second number of a constituent of interest based upon the obtained first signal and the obtained second signal.

10. 发明申请

US20120115236A1 Device and Method For Indirect Electronic Condition Control in Biomolecule Detection Platforms 有权
标题翻译：生物分子检测平台间接电子状态控制的装置与方法
公开(公告)号：US20120115236A1
公开(公告)日：2012-05-10
申请号：US13348727
申请日：2012-01-12
申请人： Michael Chen , Vincent Chen , Sam Kavusi , Christoph Lang
发明人： Michael Chen , Vincent Chen , Sam Kavusi , Christoph Lang
IPC分类号： G01N33/50
CPC分类号： G01N33/54393 , C08F20/56 , G01N33/5306 , Y10T436/11 , Y10T436/115831
摘要： A system and method of indirectly modifying an environmental condition at a test site in one embodiment includes providing a test site on a substrate, providing a hydrogel composition loaded with a chemical factor at the test site, providing an actuator configured to activate the hydrogel composition to release a chemical factor at the test site, controlling the actuator to activate the hydrogel composition to release a chemical factor at the test site, and modifying the local chemical environment at the test site with the chemical factor.
摘要翻译：在一个实施方案中间接改变测试部位的环境条件的系统和方法包括在基底上提供测试部位，在测试部位提供装载有化学因子的水凝胶组合物，提供构造成将水凝胶组合物活化的致动器在试验现场释放化学因子，控制致动器激活水凝胶组合物以释放在试验部位的化学因子，并用化学因子改变试验部位的局部化学环境。

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