专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5832019A Index guided semiconductor laser biode with shallow selective IILD 失效
标题翻译：具有浅选择性IILD的折射率引导半导体激光生物
公开(公告)号：US5832019A
公开(公告)日：1998-11-03
申请号：US345108
申请日：1994-11-28
申请人： Thomas L. Paoli , Robert L. Thornton , David P. Bour , David W. Treat
发明人： Thomas L. Paoli , Robert L. Thornton , David P. Bour , David W. Treat
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/34 , H01S5/343 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/204 , H01S5/2059 , H01S5/22 , H01S5/3414
摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD involves a shallow diffusion only. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. Also described are several techniques for reducing parasitic leakage current via the IILD regions, which include methods for providing p-n junctions or high band gap materials to reduce the parasitic leakage. In other embodiments, a planar structure is produced but with an ultra-thin upper cladding layer. Only a shallow IILD step is necessary to penetrate below the active region. Excessive out coupling and absorption losses are avoided by choosing materials that will minimize such losses, especially a pure gold metal coating as the p-contact metal.
摘要翻译：由GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率引导半导体激光二极管。在一些实施方案中，在IILD之前，侧翼于活性台面区域的翼区域被蚀刻到接近有源层，使得选择性IILD仅涉及浅扩散。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。还描述了用于减少经由IILD区域的寄生漏电流的几种技术，其包括用于提供p-n结或高带隙材料以减少寄生泄漏的方法。在其他实施例中，制造平面结构，但是具有超薄上包层。只有浅层的IILD步骤才能渗入活跃区域以下。通过选择最小化这种损失的材料，特别是作为p-接触金属的纯金金属涂层，可避免过度的偶联和吸收损失。

2. 发明授权

US5766981A Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD 失效
标题翻译：具有选择性IILD的热处理，含磷或砷的半导体激光器
公开(公告)号：US5766981A
公开(公告)日：1998-06-16
申请号：US368676
申请日：1995-01-04
申请人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
发明人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
IPC分类号： H01L21/20 , H01L21/324 , H01S5/00 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/2275 , H01S5/3413 , H01S5/3414
摘要： Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.
摘要翻译： AlGaInP和AlGaAs异质结构的无缺陷杂质诱导激光无序化（IILD）的方法。使用磷掺杂或As掺杂膜，其中硅用作扩散源，氮化硅用作选择性IILD的屏障。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。扩散源膜的沉积优选在低压反应器中进行。还公开了通过添加预扩散退火步骤来减少或消除硅扩散到III-V半导体材料中的磷过压的方案。在混合过程中产生的缺陷也可以使用GaInP或GaInP / GaAs帽降低。

3. 发明授权

US5843802A Semiconductor laser formed by layer intermixing 失效
标题翻译：半导体激光由层间混合形成
公开(公告)号：US5843802A
公开(公告)日：1998-12-01
申请号：US923092
申请日：1997-09-04
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
摘要翻译：一种用于制造诸如激光器的多层半导体器件的方法，其使用杂质诱导或空穴增强的半导体层的混合来选择性地使器件中的量子阱区域失活。

4. 发明授权

US5708674A Semiconductor laser or array formed by layer intermixing 失效
标题翻译：半导体激光器或由层间混合形成的阵列
公开(公告)号：US5708674A
公开(公告)日：1998-01-13
申请号：US367554
申请日：1995-01-03
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effectively inactivating quantum wells which have transition wavelengths longer than that desired in the selected portion of the device. The quantum wells are inactivated by intermixing them with the surrounding high band gap semiconductor layers. To accomplish this intermixing without affecting the active layer in nearby regions, a finite source of impurity inducing or promoting intermixing is located in proximity to the quantum well to be intermixed, and the sample is annealed under conditions which allow for lateral patterning of the impurity-induced intermixing. Alternatively, the body is capped over the quantum well to be inactivated with a material which induces vacancies in semi-conductive material during thermal annealing, thus promoting vacancy-enhanced intermixing of the undesired quantum well. The intermixing can also be brought about by patterned annealing or selective laser heating which produces local annealing, or by use of two different caps. For the index-guided laser diode, the flanking index-guiding regions are formed by IILD from a buried impurity source, in which surface conditions are controlled to promote impurity diffusion to the flanking regions but not to the active stripe region between the flanking regions.
摘要翻译：用于由IILD或包含具有量子阱的堆叠半导电有源层的多波长激光器阵列形成的折射率引导激光二极管的制造工艺和若干结构。通过有效地使具有比器件所选部分中所需要的转换波长更长的量子阱来激活激光波长。量子阱通过将它们与周围的高带隙半导体层混合而失活。为了实现这种混合而不影响附近区域中的有源层，杂质诱导或促进混合的有限源位于量子阱附近，以便混合，并且样品在允许杂质 - 诱导混合。或者，通过在热退火期间在半导电材料中引起空位的材料将物体盖在量子阱上以使其失活，从而促进不期望的量子阱的空位增强的混合。混合还可以通过图案化退火或选择性激光加热产生局部退火，或通过使用两个不同的盖来实现。对于折射率引导激光二极管，侧翼引导区域由埋藏杂质源的IILD形成，其中控制表面条件以促进杂质扩散到侧翼区域而不是侧向区域之间的有源条纹区域。

5. 发明授权

US4786918A Incoherent, optically uncoupled laser arrays for electro-optic line modulators and line printers 失效
标题翻译：用于电光线调制器和线路打印机的非相干光学非耦合激光阵列
公开(公告)号：US4786918A
公开(公告)日：1988-11-22
申请号：US106014
申请日：1987-10-01
申请人： Robert L. Thornton , Henry W. Sang, Jr. , Thomas L. Paoli , Robert D. Burnham
发明人： Robert L. Thornton , Henry W. Sang, Jr. , Thomas L. Paoli , Robert D. Burnham
IPC分类号： B41J2/465 , G06K15/12 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/34 , H01S5/40 , G01D9/42 , H01S3/19
CPC分类号： G06K15/1252 , B41J2/465 , H01S5/32 , H01S5/4031 , H01S5/2059 , H01S5/2063 , H01S5/2232 , H01S5/2234 , H01S5/3428 , H01S5/4037 , H01S5/405
摘要： An incoherent, optically uncoupled laser array for an electro-optic line modulator or a line printer or the like and comprising a plurality of spatial laser emitters characterized by having high power density and a uniform far field emission pattern. Structural means is provided in the array to permit the spacing of the emitters sufficiently close to provide a uniform far field emission pattern without permitting phaselocking between adjacent emitters of the array. The structural means may comprise geometric lateral and diagonal displacement of adjacent optical cavities of the laser elements. Alternatively, the structural means may comprise a plurality of spatially disposed isolation regions extending across the laser array and extending into the laser array a distance sufficient to optically isolate the optical cavities of the laser elements from one another and prevent optical coupling between adjacent laser elements. The spatial isolation regions may be formed into the fabricated laser array using impurity induced disordering (IID).
摘要翻译：一种用于电光线调制器或线路打印机等的非相干光学非耦合激光器阵列，并且包括多个具有高功率密度和均匀的远场发射图案的空间激光发射器。在阵列中提供结构装置以允许发射体的间隔足够接近以提供均匀的远场发射图案，而不允许阵列的相邻发射体之间的相位锁定。结构装置可以包括激光元件的相邻光学腔的几何横向和对角位移。或者，结构装置可以包括跨越激光器阵列延伸并且延伸到激光器阵列中的多个空间上布置的隔离区域，该距离足以使激光元件的光学腔彼此光学地隔离并且防止相邻激光元件之间的光耦合。可以使用杂质诱导的无序（IID）将空间隔离区形成为制造的激光阵列。

6. 发明授权

US4638334A Electro-optic line printer with super luminescent LED source 失效
标题翻译：具有超级发光LED光源的电光线路打印机
公开(公告)号：US4638334A
公开(公告)日：1987-01-20
申请号：US719595
申请日：1985-04-03
申请人： Robert D. Burnham , Thomas L. Paoli , Robert L. Thornton , Robert A. Sprague
发明人： Robert D. Burnham , Thomas L. Paoli , Robert L. Thornton , Robert A. Sprague
IPC分类号： B41J2/44 , B41J2/445 , B41J2/455 , G03G15/04 , G03G15/22 , G06K15/12 , H01L33/00 , H01L33/06 , H01L33/44 , H01S5/00 , G01D9/42
CPC分类号： H01L33/44 , B41J2/44 , B82Y20/00 , G06K15/1252 , H01L33/0004 , H01L33/06
摘要： An electro-optic line printer comprises a recording medium, a multigate line modulator for printing picture elements or pixels in spatially predetermined positions along a printing axis and an LED side-facet source characterized by having high output intensity and a uniform far field emission and optical means to collimate the far field emission in the tangential direction and focus the near field in the sagittal direction onto the modulator. The optical means comprises a first lens system to collect the light emitted from the LED source in both the tangential and sagittal directions and a second toric lens to collimate the light into a sheetlike beam in the tangential direction and to focus the light in the sagittal direction to a line image at the modulator. Imaging means is optically aligned between the modulator and the recording medium for imaging the modulator onto the recording medium. The solid state LED side-facet emitter source with broad uniform far field emission and high brightness density for line printer applications, eliminating the necessity for an array of individually addressable LEDs required as a light source in the past. Deposited on one facet of the LED source is an AR coating (single or multilayer) with an index of refraction chosen to be approximately midway between the effective modal refractive index of the source and the refractive index of air.
摘要翻译：电光线路打印机包括记录介质，用于沿着打印轴在空间预定位置打印图像元素或多个像素的多路线调制器以及具有高输出强度和均匀的远场发射和光学特性的LED侧面源用于在切向方向上校准远场发射并将矢状方向上的近场聚焦到调制器上。光学装置包括第一透镜系统，用于在切向和矢状方向上收集从LED源发射的光，以及第二复曲面透镜，以将光沿切线方向准直成片状束，并将光聚焦在矢状方向到调制器处的线图像。成像装置在调制器和记录介质之间光学对准，用于将调制器成像到记录介质上。固态LED侧面发射源，具有广泛的均匀远场发射和高亮度密度，适用于线路打印机应用，无需过去需要作为光源的单独寻址的LED阵列。沉积在LED源的一个面上的是AR涂层（单层或多层），折射率选择为近似于源的有效模态折射率和空气的折射率之间的中间。

7. 发明授权

US07596161B2 Laterally oxidized vertical cavity surface emitting lasers 有权
标题翻译：侧壁氧化的垂直腔表面发射激光
公开(公告)号：US07596161B2
公开(公告)日：2009-09-29
申请号：US11404800
申请日：2006-04-17
申请人： Christopher L. Chua , Robert L. Thornton , David W. Treat
发明人： Christopher L. Chua , Robert L. Thornton , David W. Treat
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18338 , H01S5/18358 , H01S5/18394 , H01S5/2063 , H01S5/2068 , H01S5/2081 , H01S5/34313 , H01S5/34353 , H01S5/423
摘要： Highly compact vertical cavity surface emitting laser structures formed by a lateral oxidation process are provided. Specifically, well-controlled oxidized regions bound and define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized, and which results in a highly reproducible and manufacturable process.
摘要翻译：提供了通过横向氧化工艺形成的高度紧凑的垂直腔表面发射激光结构。具体地，良好控制的氧化区域在电流控制氧化层中结合并限定激光结构的孔径，其中孔径包括氧化层中的导电区域。这些氧化区域通过使用在激光结构中蚀刻的预定义的空腔界限图案形成，这允许嵌入的氧化层被氧化，并且这导致高度可重复和可制造的工艺。

8. 发明授权

US6121983A Method and apparatus for a solid state laser scanning architecture 有权
标题翻译：固体激光扫描架构的方法和装置
公开(公告)号：US6121983A
公开(公告)日：2000-09-19
申请号：US196396
申请日：1998-11-19
申请人： David K. Fork , G. A. Neville Connell , Eric Peeters , Robert L. Thornton , Patrick Y. Maeda , Ross D. Bringans , Thomas L. Paoli , Joel A. Kubby , Decai Sun , Philip D. Floyd
发明人： David K. Fork , G. A. Neville Connell , Eric Peeters , Robert L. Thornton , Patrick Y. Maeda , Ross D. Bringans , Thomas L. Paoli , Joel A. Kubby , Decai Sun , Philip D. Floyd
IPC分类号： B41J2/465 , G02B26/08 , G02B26/10 , H04N1/113 , H04N1/192 , H04N1/195 , G03G15/04
CPC分类号： H04N1/1135 , B41J2/465 , G02B26/0833 , G02B26/10 , H04N1/192 , H01S5/18388 , H01S5/423 , H04N1/195
摘要： A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.
摘要翻译：使用微镜阵列来复用固态激光器阵列，以允许以宽格式进行高分辨率打印。激光阵列中的每个激光器和反射镜阵列中的每个微镜单独控制。激光器阵列可以是在GaAs衬底上产生的VCSEL阵列。

9. 发明授权

US5745517A Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD) 失效
标题翻译：通过杂质诱导层紊乱（IILD）制造的AlGaInP激光二极管的替代掺杂
公开(公告)号：US5745517A
公开(公告)日：1998-04-28
申请号：US581691
申请日：1995-12-29
申请人： David P. Bour , Robert L. Thornton , Kevin J. Beernink
发明人： David P. Bour , Robert L. Thornton , Kevin J. Beernink
IPC分类号： H01S5/042 , H01S5/20 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/167
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/0422 , H01S5/2059 , H01S5/3054 , H01S5/3413 , H01S5/34326
摘要： The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.
摘要翻译：通过杂质诱导层失调（IILD）制造的AlGaInP半导体激光器中的半导体层的极性被反转以允许n掺杂。因此，衬底和有源层之间的包层和限制层将具有p型导电性。上约束，包层和接触层可以是n或p型导电性，其中由扩散区域形成的n扩散区域从接触层向下延伸到下包层。电极可以包括基底电极或横向电极。

10. 发明授权

US5509024A Diode laser with tunnel barrier layer 失效
标题翻译：二极管激光器与隧道势垒层
公开(公告)号：US5509024A
公开(公告)日：1996-04-16
申请号：US345100
申请日：1994-11-28
申请人： David P. Bour , Robert L. Thornton
发明人： David P. Bour , Robert L. Thornton
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/327 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2009 , H01S5/3211 , H01S5/327 , H01S5/3428
摘要： Semiconductor lasers with thin tunnel barrier layers inserted between P cladding and P confining/active layers. The tunnel barrier layer creates an energy barrier which reduces the leakage of electrons from the active region, if the laser is a double heterostructure laser, or the confining region, if the laser is a quantum well, either single or multiple, laser into the cladding layer.
摘要翻译：具有薄的隧道势垒层的半导体激光器插入在P包层和P限制/有源层之间。如果激光是双重异质结构激光器或限制区域，则隧道势垒层产生能量屏障，其减少电子从有源区域的泄漏，如果激光器是量子阱，单个或多个激光入射包层层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式