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    • 7. 发明授权
    • Semiconductor laser or array formed by layer intermixing
    • 半导体激光器或由层间混合形成的阵列
    • US5708674A
    • 1998-01-13
    • US367554
    • 1995-01-03
    • Kevin J. BeerninkRobert L. ThorntonDavid P. BourThomas L. PaoliJack Walker
    • Kevin J. BeerninkRobert L. ThorntonDavid P. BourThomas L. PaoliJack Walker
    • H01S5/00H01L21/18H01S5/34H01S5/343H01S5/40H01S3/19
    • B82Y20/00H01L21/182H01S5/34H01S5/4043H01S5/3413H01S5/3414H01S5/3432H01S5/34326H01S5/4087
    • A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effectively inactivating quantum wells which have transition wavelengths longer than that desired in the selected portion of the device. The quantum wells are inactivated by intermixing them with the surrounding high band gap semiconductor layers. To accomplish this intermixing without affecting the active layer in nearby regions, a finite source of impurity inducing or promoting intermixing is located in proximity to the quantum well to be intermixed, and the sample is annealed under conditions which allow for lateral patterning of the impurity-induced intermixing. Alternatively, the body is capped over the quantum well to be inactivated with a material which induces vacancies in semi-conductive material during thermal annealing, thus promoting vacancy-enhanced intermixing of the undesired quantum well. The intermixing can also be brought about by patterned annealing or selective laser heating which produces local annealing, or by use of two different caps. For the index-guided laser diode, the flanking index-guiding regions are formed by IILD from a buried impurity source, in which surface conditions are controlled to promote impurity diffusion to the flanking regions but not to the active stripe region between the flanking regions.
    • 用于由IILD或包含具有量子阱的堆叠半导电有源层的多波长激光器阵列形成的折射率引导激光二极管的制造工艺和若干结构。 通过有效地使具有比器件所选部分中所需要的转换波长更长的量子阱来激活激光波长。 量子阱通过将它们与周围的高带隙半导体层混合而失活。 为了实现这种混合而不影响附近区域中的有源层,杂质诱导或促进混合的有限源位于量子阱附近,以便混合,并且样品在允许杂质 - 诱导混合。 或者,通过在热退火期间在半导电材料中引起空位的材料将物体盖在量子阱上以使其失活,从而促进不期望的量子阱的空位增强的混合。 混合还可以通过图案化退火或选择性激光加热产生局部退火,或通过使用两个不同的盖来实现。 对于折射率引导激光二极管,侧翼引导区域由埋藏杂质源的IILD形成,其中控制表面条件以促进杂质扩散到侧翼区域而不是侧向区域之间的有源条纹区域。
    • 9. 发明授权
    • Incoherent, optically coupled laser arrays with increased spectral width
    • 具有增加光谱宽度的不相干的光耦合激光阵列
    • US4831629A
    • 1989-05-16
    • US91819
    • 1987-09-01
    • Thomas L. PaoliRobert D. BurnhamRobert L. Thornton
    • Thomas L. PaoliRobert D. BurnhamRobert L. Thornton
    • H01S5/20H01S5/40
    • H01S5/20H01S5/4031H01S5/2059H01S5/4087
    • An optically uncoupled laser array is modified at its current confinement geometry to introduce nonuniformity in effective optical cavity width and/or length among the different lasers comprising the laser array. An array laser comprising a plurality of spaced lasing elements with an optical cavity for generating and propagating radiation under lasing conditions with each of the laser elements being optically uncoupled from one another is enhanced by an extended spectral emission linewidth and reduction in temporal coherence. This extended spectral emission linewidth and reduction in temporal coherence is accomplished by changing the gravity gain or loss for at least a majority of the laser elements relative to each other whereby a different longitudinal mode(s) of operation and frequency of operation exist for each such laser element. The enhancement may be accomplished, for example, by providing nonuniformity in the current confinement width or nonuniformity in the effective current pumped region or a change in optical cavity absorption loss for at least a majority of laser elements. Such nonuniformity or change may be randomly varying or monotonically increasing or decreasing across the laser elements of the array.
    • 光学非耦合激光器阵列在其电流约束几何形状下被修改,以在包括激光器阵列的不同激光器之间的有效光腔宽度和/或长度上引入不均匀性。 阵列激光器包括多个间隔开的激光元件,其具有用于在激光条件下产生和传播辐射的光学腔,其中每个激光元件彼此光学分离,通过扩展的光谱发射线宽和时间相干性的减小来增强。 通过改变至少大部分激光元件相对于彼此的重力增益或损耗来实现这种扩展的光谱发射线宽和时间相干性的减小,由此对于每个激光元件存在不同的纵向工作模式和操作频率 激光元件 增强可以例如通过在有效电流泵浦区域中的当前限制宽度或不均匀性中提供不均匀性或者对于至少大多数激光元件提供光学腔吸收损耗的变化来实现。 这种不均匀性或变化可以在阵列的激光元件上随机变化或单调增加或减少。