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    • 1. 发明申请
    • Method and system for reducing the peak current in refreshing dynamic random access memory devices
    • 刷新动态随机存取存储器件中降低峰值电流的方法和系统
    • US20060044909A1
    • 2006-03-02
    • US10931564
    • 2004-08-31
    • Thomas KinsleyJeffery Janzen
    • Thomas KinsleyJeffery Janzen
    • G11C7/00
    • G11C11/40611G11C11/406G11C11/40615G11C11/40618G11C11/40622
    • A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.
    • 动态随机存取存储器件包括用延迟值编程的模式寄存器。 在一些实施例中,偏移代码也存储在存储器件中。 存储器件使用延迟值,该延迟值可以被添加到偏移代码或乘以偏移代码,以延迟接收的自动刷新或自刷新命令的启动。 可以为系统中的大量动态随机存取存储器件提供不同的延迟值和可能的偏移代码,使得存储器件不是都响应于自动刷新或自刷新命令而同时执行刷新 同时存储设备。 结果,由自动刷新命令或自刷新命令产生的存储器件所绘制的峰值电流保持在较低的值。
    • 6. 发明申请
    • Memory stacking system and method
    • 内存堆叠系统和方法
    • US20060198178A1
    • 2006-09-07
    • US11413793
    • 2006-04-28
    • Thomas KinsleyKevin Kilbuck
    • Thomas KinsleyKevin Kilbuck
    • G11C5/00
    • G11C5/04G11C5/02G11C8/12
    • A method of forming a stacked memory module from a plurality of memory devices is provided. Each of the plurality of memory devices is modified to include a logic block for decoding a plurality of chip select signals. A first high density memory module is also provided that includes the modified memory devices and a serial presence detect device. The first high density memory module is included within an electronic system. Also, an additional method of forming a stacked memory module is provided, the method requiring modification of an address buffer to include a logic block for decoding a plurality of chip select signals. A second high density memory module is also provided that includes the modified address buffer and a serial presence detect device. The second high density memory module is included within an electronic system.
    • 提供了一种从多个存储器件形成堆叠的存储器模块的方法。 多个存储器件中的每一个被修改为包括用于解码多个芯片选择信号的逻辑块。 还提供了包括经修改的存储器件和串行存在检测器件的第一高密度存储器模块。 第一高密度存储器模块被包括在电子系统内。 此外,提供了形成堆叠存储器模块的附加方法,该方法需要修改地址缓冲器以包括用于解码多个片选信号的逻辑块。 还提供了第二高密度存储器模块,其包括修改的地址缓冲器和串行存在检测器件。 第二高密度存储器模块包括在电子系统内。