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1. 发明授权

US07735056B2 Automated circuit design dimension change responsive to low contrast condition determination in photomask phase pattern 有权
标题翻译：响应于光掩模相位图案中的低对比度条件确定，自动电路设计尺寸变化
公开(公告)号：US07735056B2
公开(公告)日：2010-06-08
申请号：US11392869
申请日：2006-03-30
申请人： Thomas J. Aton , Carl Albert Vickery, III , Shane R. Palmer
发明人： Thomas J. Aton , Carl Albert Vickery, III , Shane R. Palmer
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/70 , G03F1/26
摘要： The present application is directed to methods of forming a phase pattern for an integrated circuit feature described in a design database as having a first target dimension. In one embodiment, the method comprises determining whether forming a phase pattern for the integrated circuit feature described in the design database will result in one or more phase blocks of the same phase type being positioned in relative proximity so as to result in a low contrast condition, selecting a second target dimension that will avoid the low contrast condition if the low contrast condition will result, and forming the phase pattern for an integrated circuit feature having the second target dimension. Systems for forming phase patterns and photomasks comprising the phase patterns of the present application are also disclosed.
摘要翻译：本申请涉及将设计数据库中描述的集成电路特征的相位图形成为具有第一目标尺寸的方法。在一个实施例中，该方法包括确定是否形成设计数据库中描述的集成电路特征的相位图案将导致相同相位类型的一个或多个相位位置相对接近以便导致低对比度条件如果产生低对比度条件，则选择将避免低对比度条件的第二目标尺寸，以及形成具有第二目标尺寸的集成电路特征的相位图案。还公开了用于形成包括本申请的相位图案的相图和光掩模的系统。

2. 发明授权

US06634018B2 Optical proximity correction 有权
标题翻译：光学邻近校正
公开(公告)号：US06634018B2
公开(公告)日：2003-10-14
申请号：US09935452
申请日：2001-08-23
申请人： John N. Randall , Thomas J. Aton , Shane R. Palmer
发明人： John N. Randall , Thomas J. Aton , Shane R. Palmer
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/70441
摘要： An improvement to the optical proximity correction process used in photolithography. Mask pattern modeling is added to the optical proximity correction process, producing patterns that are optimized for both reticle manufacture and wafer fabrication. Pattern validation is improved by applying a mask pattern model and a wafer pattern model to the validation process. Reticle inspection is improved by adding a mask inspection tool model that comprehends the limitations of the inspection tool.
摘要翻译：对光刻中使用的光学邻近校正处理的改进。将掩模图案建模添加到光学邻近校正过程中，产生针对标线制造和晶片制造而优化的图案。通过将掩模图案模型和晶片图案模型应用于验证过程来改进图案验证。通过添加一个了解检测工具限制的面罩检查工具模型，可以改进掩模检查。

3. 发明授权

US06553558B2 Integrated circuit layout and verification method 有权
公开(公告)号：US06553558B2
公开(公告)日：2003-04-22
申请号：US09737680
申请日：2000-12-14
申请人： Shane R. Palmer , John N. Randall , Thomas J. Aton
发明人： Shane R. Palmer , John N. Randall , Thomas J. Aton
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of performing and verifying an integrated circuit layout is provided that comprises the steps of performing the layout of a mask. Proximity correction techniques are then applied to the mask layout data. Theoretical contours which comprise curvilinear forms are then extrapolated from the corrected mask data set. The curvilinear contour data is then bounded using boxing algorithms in order to generate a bounded contour data set. The bounded contour data set can then be compared to the original input mask data to detect design rule violations and other characteristics of the original layout.

4. 发明授权

US08305559B2 Exposure apparatus that utilizes multiple masks 有权
标题翻译：使用多个掩模的曝光装置
公开(公告)号：US08305559B2
公开(公告)日：2012-11-06
申请号：US12481539
申请日：2009-06-09
申请人： David M. Williamson , Shane R. Palmer
发明人： David M. Williamson , Shane R. Palmer
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03B27/54 , G03F7/70358
摘要： An exposure apparatus (10) for transferring a first mask pattern (29A) from a first mask (26A) and a second mask pattern (29B) from a second mask (26B) to a substrate (28) includes a first mask stage assembly (18A), a second mask stage assembly (18B), an illumination system (14A), a substrate stage assembly (20), and an optical assembly (16). The first mask stage assembly (18A) positions the first mask (26A). The second mask stage assembly (18B) positions the second mask (26B). The illumination system (14A) selectively generates a first illumination beam (32A) that is directed at the first mask (26A) to generate a first pattern beam (38A), and a second illumination beam (32B) that is directed at the second mask (26B) to generate a second pattern beam (38B). The substrate stage assembly (20) positions the substrate (28). The optical assembly (16) can include a first optical inlet (40A) that receives the first pattern beam (38A), a spaced apart second optical inlet (40B) that receives the second pattern beam (38B), and an optical outlet (40C) that directs and focuses the first pattern beam (38A) and the second pattern beam (38B) onto the substrate (28).
摘要翻译：一种用于从第一掩模（26A）和第二掩模图案（29B）将第一掩模图案（29A）从第二掩模（26B）传送到基板（28）的曝光设备（10）包括第一掩模台组件 18A），第二掩模台组件（18B），照明系统（14A），衬底台组件（20）和光学组件（16）。第一掩模台组件（18A）定位第一掩模（26A）。第二掩模台组件（18B）定位第二掩模（26B）。照明系统（14A）选择性地产生指向第一掩模（26A）以产生第一图案光束（38A）的第一照明光束（32A），以及指向第二掩模的第二照明光束（32B）（26B）以产生第二图案光束（38B）。衬底台组件（20）定位衬底（28）。光学组件（16）可以包括接收第一图案光束（38A）的第一光学入口（40A），接收第二图案光束（38B）的间隔开的第二光学入口（40B）和光学出口（40C）），其将第一图案光束（38A）和第二图案光束（38B）引导并聚焦到基板（28）上。

5. 发明申请

US20080305409A1 LITHOGRAPHIC MASK AND METHOD FOR PRINTING FEATURES USING THE MASK 审中-公开
标题翻译：使用掩模打印特征的图形掩模和方法
公开(公告)号：US20080305409A1
公开(公告)日：2008-12-11
申请号：US11760430
申请日：2007-06-08
申请人： Shane R. Palmer
发明人： Shane R. Palmer
IPC分类号： G03F1/16 , G03F7/20
CPC分类号： G03F1/36
摘要： A lithographic mask enables printing wafer features at very small to large pitch values with an increase in the depth of focus. The mask may include square or rectangular patterns for printing square or rectangular features, such as contacts or vias. The square or rectangular features include wings that aid in the transfer of the square or rectangular features. The mask may be used to print water features by exposing the mask to radiation with selective polarization.
摘要翻译：平版印刷掩模使得能够以非常小的至大的间距值印刷晶片特征，随着焦深的增加。掩模可以包括用于印刷正方形或矩形特征的方形或矩形图案，例如触点或通孔。方形或矩形特征包括有助于传递正方形或矩形特征的翼。掩模可以用于通过将掩模暴露于具有选择性极化的辐射来打印水的特征。

6. 发明授权

US5442184A System and method for semiconductor processing using polarized radiant energy 失效
标题翻译：使用偏光辐射能的半导体处理系统和方法
公开(公告)号：US5442184A
公开(公告)日：1995-08-15
申请号：US165284
申请日：1993-12-10
申请人： Shane R. Palmer , Gong Chen
发明人： Shane R. Palmer , Gong Chen
IPC分类号： H01L21/027 , G03F7/20 , G03B27/72
CPC分类号： G03F7/70566
摘要： An optical lithography system (10) for exposing a layer (12) of radiation sensitive material on a semiconductor wafer (16) is provided. System (10) comprises a source of polarized radiant energy (18), a mask (20) and a lens (22). Radiant energy from a light source (28) is polarized in a predetermined orientation by polarization filter (30). Polarized radiant energy passes through mask (20) and exposes layer (12) in a predetermined pattern. Actuating member (32) may rotate polarization filter (30) to provide more than one orientation for the polarized radiant energy during a single exposure.
摘要翻译：提供一种用于在半导体晶片（16）上暴露辐射敏感材料层（12）的光刻系统（10）。系统（10）包括偏振辐射能源（18），掩模（20）和透镜（22）。来自光源（28）的辐射能量通过偏振滤光器（30）以预定取向极化。极化辐射能通过掩模（20）并以预定图案曝光层（12）。致动构件（32）可以旋转偏振过滤器（30）以在单次曝光期间为偏振辐射能提供多于一个取向。

7. 发明授权

US5306584A Mask or wafer writing technique 失效
标题翻译：掩模或晶圆写入技术
公开(公告)号：US5306584A
公开(公告)日：1994-04-26
申请号：US722795
申请日：1991-06-28
申请人： Shane R. Palmer
发明人： Shane R. Palmer
IPC分类号： G03F1/00 , G03F7/20 , H01J37/304 , G03F9/00
CPC分类号： G03F7/70375 , G03F1/76 , G03F7/2059 , H01J37/3045
摘要： A photolithographic mask or a directly written wafer has a pattern formed on a substrate 320. A grid pattern 316 and a layer of resist material 322 are formed on the substrate 320. The grid pattern 316 may be either above or beneath the resist material 320. The grid pattern 316 is scanned, by an e-beam or optical beam for example, without substantially reacting the resist layer 320 to obtain information on the location of the grid pattern 316. Portions of the resist material 320 are then exposed to form a device pattern. The device pattern is determined in part from the information and is also formed over the grid pattern 316. Other systems and methods are also disclosed.
摘要翻译：光刻掩模或直接写入的晶片具有形成在衬底320上的图案。栅格图案316和抗蚀剂材料层322形成在衬底320上。栅格图案316可以在抗蚀剂材料320的上方或下方。栅格图案316通过例如电子束或光束被扫描，而基本上不使抗蚀剂层320反应以获得关于栅格图案316的位置的信息。然后将抗蚀剂材料320的部分暴露以形成设备模式。器件图案部分地根据信息确定，并且还形成在网格图案316上。还公开了其他系统和方法。

8. 发明授权

US4973381A Method and apparatus for etching surface with excited gas 失效
标题翻译：用激光气蚀刻表面的方法和装置
公开(公告)号：US4973381A
公开(公告)日：1990-11-27
申请号：US317145
申请日：1989-02-28
申请人： Shane R. Palmer
发明人： Shane R. Palmer
IPC分类号： H01L21/00 , H05H1/30
CPC分类号： H01L21/67069 , H05H1/30
摘要： A system (10) is provided for etching a surface (14). A vacuum enclosure (12) is provided to create a vacuum around containers (13) and the surface to be etched (14). A pressurized gas source (16) is utilized to input gas into the containers (13). A wire coil (38) is wrapped around the containers (13) and provided with an oscillator (40) to generate radio frequency energy. The radio frequency energy excites the gas within the containers (13) which is then discharged through an output opening (46) toward the surface to be etched (14). A vacuum pump (20) is provided to evacuate the enclosure (12).
摘要翻译：提供一种用于蚀刻表面（14）的系统（10）。提供真空外壳（12）以在容器（13）和待蚀刻表面（14）周围产生真空。加压气体源（16）用于将气体输入到容器（13）中。线圈（38）缠绕在容器（13）周围并设置有振荡器（40）以产生射频能量。无线电频率能量激发容器（13）内的气体，然后通过输出开口（46）朝向被蚀刻表面（14）排出。提供真空泵（20）以抽空外壳（12）。

9. 发明申请

US20090316131A1 EXPOSURE APPARATUS THAT UTILIZES MULTIPLE MASKS 有权
标题翻译：曝光装置，使用多个面膜
公开(公告)号：US20090316131A1
公开(公告)日：2009-12-24
申请号：US12481539
申请日：2009-06-09
申请人： David M. Williamson , Shane R. Palmer
发明人： David M. Williamson , Shane R. Palmer
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70358
摘要： An exposure apparatus (10) for transferring a first mask pattern (29A) from a first mask (26A) and a second mask pattern (29B) from a second mask (26B) to a substrate (28) includes a first mask stage assembly (18A), a second mask stage assembly (18B), an illumination system (14A), a substrate stage assembly (20), and an optical assembly (16). The first mask stage assembly (18A) positions the first mask (26A). The second mask stage assembly (18B) positions the second mask (26B). The illumination system (14A) selectively generates a first illumination beam (32A) that is directed at the first mask (26A) to generate a first pattern beam (38A), and a second illumination beam (32B) that is directed at the second mask (26B) to generate a second pattern beam (38B). The substrate stage assembly (20) positions the substrate (28). The optical assembly (16) can include a first optical inlet (40A) that receives the first pattern beam (38A), a spaced apart second optical inlet (40B) that receives the second pattern beam (38B), and an optical outlet (40C) that directs and focuses the first pattern beam (38A) and the second pattern beam (38B) onto the substrate (28).
摘要翻译：一种用于从第一掩模（26A）和第二掩模图案（29B）将第一掩模图案（29A）从第二掩模（26B）传送到基板（28）的曝光设备（10）包括第一掩模台组件 18A），第二掩模台组件（18B），照明系统（14A），衬底台组件（20）和光学组件（16）。第一掩模台组件（18A）定位第一掩模（26A）。第二掩模台组件（18B）定位第二掩模（26B）。照明系统（14A）选择性地产生指向第一掩模（26A）以产生第一图案光束（38A）的第一照明光束（32A），以及指向第二掩模的第二照明光束（32B）（26B）以产生第二图案光束（38B）。衬底台组件（20）定位衬底（28）。光学组件（16）可以包括接收第一图案光束（38A）的第一光学入口（40A），接收第二图案光束（38B）的间隔开的第二光学入口（40B）和光学出口（40C）），其将第一图案光束（38A）和第二图案光束（38B）引导并聚焦到基板（28）上。

10. 发明授权

US5539568A Method of exposing a light sensitive material 失效
标题翻译：曝光光敏材料的方法
公开(公告)号：US5539568A
公开(公告)日：1996-07-23
申请号：US478157
申请日：1995-06-07
申请人： Tsen-Hwang Lin , Shane R. Palmer , Steven C. Gustafson , Jay M. Brown
发明人： Tsen-Hwang Lin , Shane R. Palmer , Steven C. Gustafson , Jay M. Brown
IPC分类号： G02B26/06 , G03F1/26 , G03F7/20 , G02F1/11
CPC分类号： G03F7/70291 , G02B26/06 , G03F7/2002 , G03F7/70191 , G03F7/70283 , G03F7/70566 , G03F1/26
摘要： A phase shift illuminator (700) is comprised of a light source (704) and a phase modulator (716), typically a flexure beam micromirror array, which transversely modulates the incident light beam. When a flexure beam micromirror array is used as the phase modulator (716) a polarizing beam splitter (712) and a quarter-wave plate (714) are used to separate the incident and reflected light beams. The phase modulated light beam (720) from the optical illuminator may be used in optical lithography by passing the light beam through a lithography mask (724), typically after the light beam is phase modulated, and focusing the light beam onto a target wafer (726).
摘要翻译：相移照明器（700）包括光源（704）和相位调制器（716），通常是弯曲光束微镜阵列，其横向地调制入射光束。当使用挠曲束微镜阵列作为相位调制器（716）时，偏振分束器（712）和四分之一波片（714）被用于分离入射光和反射光束。来自光学照明器的相位调制光束（720）可以通过使光束通过光刻掩模（724），通常在光束被相位调制之后将光束聚焦到目标晶片（724）上而用于光学光刻 726）。

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