专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08228715B2 Structures and methods for a field-reset spin-torque MRAM 失效
标题翻译：现场复位自旋扭矩MRAM的结构和方法
公开(公告)号：US08228715B2
公开(公告)日：2012-07-24
申请号：US12789838
申请日：2010-05-28
申请人： Thomas Andre , Saied Tehrani , Jon Slaughter , Nicholas Rizzo
发明人： Thomas Andre , Saied Tehrani , Jon Slaughter , Nicholas Rizzo
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.
摘要翻译：编程自旋转矩磁阻存储器阵列的装置和方法包括位于多个磁阻位中的每一个附近的金属复位线，并且被配置为通过在电流下产生磁场将多个磁阻存储元件设置为已知状态流过它然后将自旋转矩传递电流施加到选定的磁阻位，以将所选位切换到编程状态。在另一种操作模式中，在产生磁场之前感测到多个位的电阻。在产生磁场之后再次感测电阻，并且根据电阻变化确定由每个位的初始状态表示的数据。然后，自旋转矩传递电流仅施加于具有与施加磁场之前不同的电阻的那些磁阻位。

2. 发明授权

US06544801B1 Method of fabricating thermally stable MTJ cell and apparatus 有权
标题翻译：制造热稳定MTJ电池及其装置的方法
公开(公告)号：US06544801B1
公开(公告)日：2003-04-08
申请号：US09642350
申请日：2000-08-21
申请人： Jon Slaughter , Saied Tehrani , Eugene Chen , Mark Durlam , Mark DeHerrera , Renu Whig Dave
发明人： Jon Slaughter , Saied Tehrani , Eugene Chen , Mark Durlam , Mark DeHerrera , Renu Whig Dave
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00
摘要： An MTJ cell including an insulator layer of material between magnetic material layers with the insulator layer of material having a greater attraction for a third material than the magnetic material layers. The third material is introduced to one or both so that when the cell is heated the third material is redistributed from the magnetic material layer to the insulator layer. Upon redistribution the insulator layer becomes an insulator layer material. Also, a first diffusion barrier layer is positioned between a first metal electrode and one of the magnetic material layers and/or a second diffusion barrier layer is positioned between a second metal electrode and the other magnetic material layer to prevent diffusion of the metal in the electrodes into the magnetic material layers.
摘要翻译： MTJ单元包括在磁性材料层之间的材料的绝缘体层，材料的绝缘体层对于第三材料具有比磁性材料层更大的吸引力。将第三材料引入一个或两个，使得当电池被加热时，第三材料从磁性材料层重新分布到绝缘体层。在再分配时，绝缘体层变成绝缘体层材料。此外，第一扩散阻挡层位于第一金属电极和一个磁性材料层之间，和/或第二扩散阻挡层位于第二金属电极和另一个磁性材料层之间，以防止金属在电极进入磁性材料层。

3. 发明授权

US06365419B1 High density MRAM cell array 失效
标题翻译：高密度MRAM单元阵列
公开(公告)号：US06365419B1
公开(公告)日：2002-04-02
申请号：US09649114
申请日：2000-08-28
申请人： Mark Durlam , Mark DeHerrera , Eugene Chen , Saied Tehrani , Gloria Kerszykowski , Peter K. Naji , Jon Slaughter , Kelly W. Kyler
发明人： Mark Durlam , Mark DeHerrera , Eugene Chen , Saied Tehrani , Gloria Kerszykowski , Peter K. Naji , Jon Slaughter , Kelly W. Kyler
IPC分类号： H01L2100
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/12
摘要： A method of fabricating an MRAM cell includes providing an isolation transistor on a semiconductor substrate and forming an interconnect stack on the substrate in communication with one terminal of the transistor. A via is formed on the upper end of the stack so as to extend from a position below the digit line to a position above the digit line. The via also extends above the upper surface of a dielectric layer to provide an alignment key. A MTJ memory cell is positioned on the upper surface in contact with the via, and the ends of a free layer of magnetic material are spaced from the ends of a pinned edge of magnetic material by using sidewall spacers and selective etching.
摘要翻译：制造MRAM单元的方法包括在半导体衬底上提供隔离晶体管，并在衬底上形成与晶体管的一个端子连通的互连叠层。通孔形成在堆叠的上端，以从数字线下方的位置延伸到数字线上方的位置。通孔也延伸到电介质层的上表面之上，以提供对准键。 MTJ存储单元位于与通孔接触的上表面上，并且通过使用侧壁间隔件和选择性蚀刻，磁性材料的自由层的端部与磁性材料的被钉扎边缘的端部间隔开。

4. 发明授权

US06205052B1 Magnetic element with improved field response and fabricating method thereof 有权
标题翻译：具有改善的场响应的磁性元件及其制造方法
公开(公告)号：US06205052B1
公开(公告)日：2001-03-20
申请号：US09422447
申请日：1999-10-21
申请人： Jon Slaughter , Jing Shi , Eugene Chen , Saied Tehrani
发明人： Jon Slaughter , Jing Shi , Eugene Chen , Saied Tehrani
IPC分类号： G11C1115
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/324 , H01F10/3254 , H01F10/3268
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26). A second electrode (18) is included and comprises a free ferromagnetic layer (28). A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16). At least one additional layer (20 & 22) is provided between the base metal layer (13) and the spacer layer (16). The base metal layer (13) or at least one of the layers positioned between the base metal layer (13) and the spacer layer (16) having an x-ray amorphous structure such that a reduced topological coupling strength between the free ferromagnetic layer (28) and the fixed ferromagnetic layer (26) is achieved.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）包括固定的铁磁层（26）。包括第二电极（18）并且包括自由铁磁层（28）。间隔层（16）位于固定铁磁层（26）和自由铁磁（28）层间隔层（16）之间。至少一个附加层（20和22）设置在基底金属层（13）和间隔层（16）之间。基底金属层（13）或位于基底金属层（13）和间隔层（16）之间的层中的至少一层具有x射线非晶结构，使得游离铁磁层（ 28）和固定铁磁层（26）。

5. 发明授权

US08686484B2 Spin-torque magnetoresistive memory element and method of fabricating same 有权
标题翻译：自旋扭矩磁阻存储元件及其制造方法
公开(公告)号：US08686484B2
公开(公告)日：2014-04-01
申请号：US13158171
申请日：2011-06-10
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

6. 发明授权

US08518734B2 Process integration of a single chip three axis magnetic field sensor 有权
标题翻译：单芯片三轴磁场传感器的工艺集成
公开(公告)号：US08518734B2
公开(公告)日：2013-08-27
申请号：US12751927
申请日：2010-03-31
申请人： Renu Whig , Phillip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
发明人： Renu Whig , Phillip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
IPC分类号： H01L27/20 , H01L41/06 , G01R33/02
CPC分类号： H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
摘要翻译：半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

7. 发明申请

US20080017939A1 LOW POWER MAGNETOELECTRONIC DEVICE STRUCTURES UTILIZING ENHANCED PERMEABILITY MATERIALS 失效
标题翻译：低功率电子设备结构使用增强渗透性材料
公开(公告)号：US20080017939A1
公开(公告)日：2008-01-24
申请号：US11867189
申请日：2007-10-04
申请人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
发明人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

8. 发明申请

US20050153063A1 Synthetic antiferromagnetic structure for magnetoelectronic devices 失效
公开(公告)号：US20050153063A1
公开(公告)日：2005-07-14
申请号：US11075587
申请日：2005-03-09
申请人： Jason Janesky , Bradley Engel , Nicholas Rizzo , Jon Slaughter
发明人： Jason Janesky , Bradley Engel , Nicholas Rizzo , Jon Slaughter
IPC分类号： G01R33/09 , G11C11/16 , H01F10/32 , H01F41/30 , B05D5/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.

9. 发明授权

US08390283B2 Three axis magnetic field sensor 有权
标题翻译：三轴磁场传感器
公开(公告)号：US08390283B2
公开(公告)日：2013-03-05
申请号：US12567496
申请日：2009-09-25
申请人： Phillip Mather , Jon Slaughter , Nicholas Rizzo
发明人： Phillip Mather , Jon Slaughter , Nicholas Rizzo
IPC分类号： G01R33/02 , G01R33/00
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/093 , H01L43/08
摘要： Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).
摘要翻译：三桥电路（101,111,121）各自包括耦合为惠斯通电桥（100）的磁阻传感器，用于在三个垂直方向（110,120,130）上感测磁场（160），所述三个正交方向（110,120,130）设置有单个钉扎材料沉积和体晶片设置程序。三个桥接电路（121）中的一个包括第一磁阻传感器（141），其包括设置在被钉扎层（126）上的第一感测元件（122），第一感测元件（122）具有第一和第二边缘以及第一和第二侧面，以及第一磁通引导件（132），其布置成不平行于衬底的第一侧面并且具有靠近第一边缘并且在第一感测元件（122）的第一侧上的端部。可选的第二磁通引导件136可以布置成不平行于衬底的第一侧并且具有靠近第一感测元件（122）的第二边缘和第二侧的端部。

10. 发明申请

US20140217528A1 SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME 有权
标题翻译：旋转磁阻记忆元件及其制造方法
公开(公告)号：US20140217528A1
公开(公告)日：2014-08-07
申请号：US14219532
申请日：2014-03-19
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式