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1. 发明申请

US20070201160A1 Positioning of a magnetic head in a magnetic data recording device using a multiple sensor array 失效
标题翻译：使用多传感器阵列将磁头定位在磁数据记录装置中
公开(公告)号：US20070201160A1
公开(公告)日：2007-08-30
申请号：US11508538
申请日：2006-08-22
申请人： Thomas Albrecht , Bruce Gurney , Ernesto Marinero
发明人： Thomas Albrecht , Bruce Gurney , Ernesto Marinero
IPC分类号： G11B21/02
CPC分类号： G11B5/59655 , G11B5/3948 , G11B5/397 , G11B5/4886
摘要： A system method and apparatus for determining a position error signal (PES) for servo tracking in a data recording system using a data track. The PES is determined using a sensor array that includes a plurality of sensors offset from one another by certain predetermined distances in a direction perpendicular to the track direction. Correlation functions can be determined for pairs of sensors in the sensor array based on the signals read by the sensors. The results of these correlation functions can then be used to determine a PES by using a look up table or computational processor.
摘要翻译：一种用于在使用数据轨道的数据记录系统中确定用于伺服跟踪的位置误差信号（PES）的系统方法和装置。使用包括多个传感器的传感器阵列来确定PES，所述传感器阵列在垂直于轨道方向的方向上彼此偏移了特定的预定距离。可以基于传感器读取的信号，确定传感器阵列中的传感器对的相关函数。这些相关函数的结果然后可以用于通过使用查询表或计算处理器来确定PES。

2. 发明申请

US20060022672A1 Planar extraordinary magnetoresistance sensor 有权
标题翻译：平面非凡磁阻传感器
公开(公告)号：US20060022672A1
公开(公告)日：2006-02-02
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert Fontana , Bruce Gurney , Stefan Maat , Ernesto Marinero
发明人： Amitava Chattopadhyay , Robert Fontana , Bruce Gurney , Stefan Maat , Ernesto Marinero
IPC分类号： G01R33/02
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译：非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

3. 发明申请

US20060018054A1 Narrow track extraordinary magneto resistive [EMR] device 有权
标题翻译：窄轨非磁性电磁[EMR]装置
公开(公告)号：US20060018054A1
公开(公告)日：2006-01-26
申请号：US10897454
申请日：2004-07-22
申请人： Amitava Chattopadhyay , Robert Fontana , Bruce Gurney , Stefan Maat , Ernesto Marinero
发明人： Amitava Chattopadhyay , Robert Fontana , Bruce Gurney , Stefan Maat , Ernesto Marinero
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译：具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。传感器包括一层半导体层和一层导电材料。第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

4. 发明申请

US20060193080A1 Magnetic head having a hall effect sensor 失效
标题翻译：磁头具有霍尔效应传感器
公开(公告)号：US20060193080A1
公开(公告)日：2006-08-31
申请号：US11069414
申请日：2005-02-28
申请人： Amitava Chattopadhyay , Stefan Maat , Ernesto Marinero , Bruce Gurney
发明人： Amitava Chattopadhyay , Stefan Maat , Ernesto Marinero , Bruce Gurney
IPC分类号： G11B5/37
CPC分类号： G11B5/376
摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.
摘要翻译：磁头具有采用“霍尔效应”的传感器。在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便暴露于与磁记录位基本垂直于其的磁场线。有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

5. 发明申请

US20080037180A1 NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR] DEVICE WITH WIDE VOLTAGE TABS AND DIAD LEAD STRUCTURE 失效
标题翻译： NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR]具有宽电压表和DIAD引线结构的器件
公开(公告)号：US20080037180A1
公开(公告)日：2008-02-14
申请号：US11872652
申请日：2007-10-15
申请人： Thomas Boone, Jr. , Bruce Gurney , Ernesto Marinero , Neil Smith
发明人： Thomas Boone, Jr. , Bruce Gurney , Ernesto Marinero , Neil Smith
IPC分类号： G11B5/127
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An Extraordinary Magnetoresistive Sensor (EMR Sensor) having wide voltage lead tabs for reduced noise and increased signal to noise ratio. The leads can be formed in a triad structure, wherein a pair of voltage leads is located at either side of a current lead, or can be formed in a diad structure having a single voltage lead located at one side of a current lead.
摘要翻译：具有宽电压引线接头的非凡磁阻传感器（EMR传感器）可降低噪音，增加信噪比。引线可以形成为三电极结构，其中一对电压引线位于电流引线的任一侧，或者可以形成为具有位于电流引线一侧的单个电压引线的二元结构。

6. 发明申请

US20060193088A1 Integrated servo and read EMR sensor 失效
公开(公告)号：US20060193088A1
公开(公告)日：2006-08-31
申请号：US11069732
申请日：2005-02-28
申请人： Bruce Gurney , Ernesto Marinero
发明人： Bruce Gurney , Ernesto Marinero
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/397 , G11B5/3993 , G11B5/59655
摘要： An integrated servo and read device implementing Extraordinary Magnetoresistive (EMR) sensors. In one embodiment, dedicated EMR sensors are employed: one for data reading and one for servo operations. The sensors are preferably configured in an abutted configuration. In addition to magnetic recording systems, the device is also useful in a magnetic imaging device such as a scanning magnetometer. The integrated device may also be useful in other devices requiring a high sensitivity, high resolution sensor.

7. 发明申请

US20060262458A1 Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor 失效
标题翻译：基于传感器后端的端子连接的自旋积累效应的磁阻传感器
公开(公告)号：US20060262458A1
公开(公告)日：2006-11-23
申请号：US11131737
申请日：2005-05-17
申请人： Matthew Carey , Bruce Gurney
发明人： Matthew Carey , Bruce Gurney
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/398
摘要： A disk drive magnetoresistive (MR) read head based on the spin accumulation effect has no electrical terminal and associated insulating layer in the read gap. The spin-accumulation type of MR read head has an electrically conductive strip located on an insulating layer on the lower magnetic shield with a first end at the sensing end of the head that faces the disk and a second end at the back end of the head recessed from the sensing end. At the sensing end of the head the upper magnetic shield is located on the free layer without an insulating layer. A resistance-detection circuit is electrically coupled to the upper shield and the lower shield at the back end of the head. At the back end of the head, an electrical terminal is located on the fixed layer and electrically insulated from the upper shield. A current-supply circuit is electrically coupled to the terminal and the lower shield at the back end of the head.
摘要翻译：基于自旋累积效应的磁盘驱动磁阻（MR）读取头在读取间隙中没有电端子和相关的绝缘层。磁共振读取头的旋转累积型具有位于下磁屏蔽上的绝缘层上的导电条，头部的感测端处的第一端面向磁盘，并且头部后端的第二端从传感端凹入。在磁头的感测端，上磁屏蔽位于自由层上，没有绝缘层。电阻检测电路电耦合到头部后端的上屏蔽和下屏蔽。在头的后端，电端子位于固定层上并与上屏蔽电绝缘。电流供应电路电耦合到头部的后端处的端子和下屏蔽件。

8. 发明申请

US20050030674A1 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 失效
公开(公告)号：US20050030674A1
公开(公告)日：2005-02-10
申请号：US10931315
申请日：2004-08-31
申请人： Matthew Carey , Eric Fullerton , Bruce Gurney , Thai Le , Stefan Maat , Philip Rice
发明人： Matthew Carey , Eric Fullerton , Bruce Gurney , Thai Le , Stefan Maat , Philip Rice
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

9. 发明申请

US20050122636A1 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 失效
公开(公告)号：US20050122636A1
公开(公告)日：2005-06-09
申请号：US10985195
申请日：2004-11-09
申请人： Matthew Carey , Eric Fullerton , Bruce Gurney , Thai Le , Stefan Maat , Philip Rice
发明人： Matthew Carey , Eric Fullerton , Bruce Gurney , Thai Le , Stefan Maat , Philip Rice
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01F10/32 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

10. 发明申请

US20050036244A1 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 审中-公开
标题翻译：用于交换耦合磁性结构的稳定性增强型底层，磁阻传感器和磁盘驱动系统
公开(公告)号：US20050036244A1
公开(公告)日：2005-02-17
申请号：US10951397
申请日：2004-09-27
申请人： Matthew Carey , Eric Fullerton , Bruce Gurney , Thai Le , Stefan Maat , Philip Rice
发明人： Matthew Carey , Eric Fullerton , Bruce Gurney , Thai Le , Stefan Maat , Philip Rice
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01F10/32 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
摘要翻译：交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

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