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1. 发明申请

US20060189102A1 Process for treating substrates for the microelectronics industry, and substrates obtained by this process 有权
标题翻译：用于处理微电子工业用基板的方法以及通过该方法获得的基板
公开(公告)号：US20060189102A1
公开(公告)日：2006-08-24
申请号：US11348502
申请日：2006-02-07
申请人： Thierry Barge , Andre Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , Andre Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/322
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.
摘要翻译：一种用于处理微电子学或光电子工业的衬底的方法，其中衬底在其至少一个面上包括要在其中形成部件的工作层。该方法包括在还原性气氛下进行退火，然后在工作层的自由表面上进行化学机械抛光的步骤。

2. 发明授权

US07288418B2 Process for treating substrates for the microelectronics industry, and substrates obtained by this process 有权
标题翻译：用于处理微电子工业用基板的方法以及通过该方法获得的基板
公开(公告)号：US07288418B2
公开(公告)日：2007-10-30
申请号：US11348502
申请日：2006-02-07
申请人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/302
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.
摘要翻译：一种用于处理微电子学或光电子工业的衬底的方法，其中衬底在其至少一个面上包括要在其中形成部件的工作层。该方法包括在还原性气氛下进行退火，然后在工作层的自由表面上进行化学机械抛光的步骤。

3. 发明授权

US07029993B1 Method for treating substrates for microelectronics and substrates obtained according to said method 有权
标题翻译：用于处理根据所述方法获得的用于微电子学和衬底的衬底的方法
公开(公告)号：US07029993B1
公开(公告)日：2006-04-18
申请号：US10069058
申请日：2000-08-17
申请人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/302
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： The invention relates to a method for treating substrates (50) for microelectronics or optoelectronics, whereby said substrates comprise a useful layer (52) on at least one of the surfaces thereof. The inventive method includes a mechanical/chemical polishing step occurring on a bare surface (54) of the useful layer and is characterized in that it also comprises a post-curing step in a reductive atmosphere (100) before said polishing step occurs.
摘要翻译：本发明涉及一种用于处理微电子学或光电子学的衬底（50）的方法，由此所述衬底在其至少一个表面上包括有用层（52）。本发明的方法包括在有用层的裸露表面（54）上发生的机械/化学抛光步骤，其特征在于它还包括在所述抛光步骤发生之前在还原性气氛（100）中的后固化步骤。

4. 发明授权

US06372609B1 Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method 有权
标题翻译：通过氢离子分离法制造SOI晶片的方法和通过该方法制造的SOI晶片
公开(公告)号：US06372609B1
公开(公告)日：2002-04-16
申请号：US09555687
申请日：2000-06-02
申请人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.
摘要翻译：提供了一种通过氢离子分层方法制造具有高质量的SOI晶片的方法，其中去除了在分层之后残留在SOI层的表面上的损伤层和表面粗糙度，保持了SOI层的厚度均匀性。根据本发明，提供了一种通过氢离子分层方法制造SOI晶片的方法，其中通过在结合热处理之后的氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后进行还原气氛的热处理。通过氢分离法制造SOI晶片的方法，其中通过在分解热处理之后在氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后在还原气氛中进行热处理执行以及通过该方法制造的SOI晶片。

5. 发明授权

US06897124B2 Method of manufacturing a bonded wafers using a Bernoulli chuck 失效
标题翻译：使用伯努利卡盘制造粘结晶片的方法
公开(公告)号：US06897124B2
公开(公告)日：2005-05-24
申请号：US10478664
申请日：2002-05-27
申请人： Naoto Tate , Hiroji Aga
发明人： Naoto Tate , Hiroji Aga
IPC分类号： H01L21/20 , H01L21/00 , H01L21/02 , H01L21/677 , H01L21/762 , H01L27/12 , H01L21/30
CPC分类号： H01L21/67751 , H01L21/67092 , H01L21/76254 , Y10S414/135 , Y10S414/137 , Y10S414/141 , Y10S438/977
摘要： A bonded wafer 27 and a residual wafer 28 are placed in a state of being superimposed on each other on a susceptor 20 disposed in a heat treatment 10. A Bernoulli chuck 1 is moved to a wafer holding position 60 on a susceptor 20 by driving an arm 56, sucks the bonded wafer 27 positioned on the upper side and then moves to a bonded wafer recovery table 50′ to recover the bonded wafer there. Then, similarly, the Bernoulli chuck 1 suction holds the residual wafer 28 at the wafer holding position 60 and then moves to a residual wafer recovery table 50″ to recover the residual wafer there. With such a construction adopted, in a method for manufacturing a bonded wafer according to a so-called smart-cut method, not only is the separated bonded wafer recovered suppressing occurrence of a defect, deficiency and contamination, but there is also provided a method for manufacturing a bonded wafer capable of automation suitable for mass production.
摘要翻译：接合晶片27和残余晶片28以在热处理10中设置的基座20上彼此重叠的状态放置。通过驱动臂56将伯努利卡盘1移动到基座20上的晶片保持位置60，吸附位于上侧的接合晶片27，然后移动到接合晶片恢复台50'以在其上回收接合晶片。然后，类似地，伯努利卡盘1吸附将剩余晶片28保持在晶片保持位置60，然后移动到残余晶片恢复台50“，以在其上恢复剩余晶片。采用这样的结构，在所谓的智能切割方法的制造接合晶片的方法中，不仅分离的接合晶片回收抑制缺陷，缺陷和污染的发生，而且还提供了一种方法用于制造能够适用于批量生产的自动化的粘合晶片。

6. 发明授权

US06846718B1 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US06846718B1
公开(公告)日：2005-01-25
申请号：US09857803
申请日：2000-10-13
申请人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

7. 发明授权

US08728912B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08728912B2
公开(公告)日：2014-05-20
申请号：US13990883
申请日：2011-11-18
申请人： Hiroji Aga , Isao Yokokawa , Satoshi Oka
发明人： Hiroji Aga , Isao Yokokawa , Satoshi Oka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/31111 , H01L21/76254
摘要： The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method.
摘要翻译：本发明涉及一种SOI晶片的制造方法，其中，除去掩埋氧化膜的外周，得到SOI晶片的SOI层的外周位于外侧的结构的方法并且在包含氢或含有氯化氢气体的气氛的还原气氛中对SOI晶片进行热处理后，在SOI层的表面上形成外延层。结果，提供了一种方法，其可以通过进行外延生长来制造具有期望的SOI层厚度的SOI晶片，而不会在在台面部分中没有氧化硅膜的SOI晶片中产生谷状步骤，通过离子注入分层方法制造的SOI晶片。

8. 发明申请

US20120244679A1 METHOD FOR PRODUCING BONDED WAFER 有权
标题翻译：生产粘结波的方法
公开(公告)号：US20120244679A1
公开(公告)日：2012-09-27
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

9. 发明申请

US20110281420A1 METHOD FOR MANUFACTURING SOI WAFER 审中-公开
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110281420A1
公开(公告)日：2011-11-17
申请号：US13145275
申请日：2010-01-08
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/30608 , H01L21/31111
摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.
摘要翻译：一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

10. 发明申请

US20110104870A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造粘结波的方法
公开(公告)号：US20110104870A1
公开(公告)日：2011-05-05
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

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