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1. 发明授权

US07745102B2 Immersion fluids for lithography 有权
标题翻译：用于光刻的浸液
公开(公告)号：US07745102B2
公开(公告)日：2010-06-29
申请号：US11754615
申请日：2007-05-29
申请人： Theodore H. Fedynyshyn , Indira Pottebaum
发明人： Theodore H. Fedynyshyn , Indira Pottebaum
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , C07F7/21
摘要： Compositions for use as immersion fluids are described. In general, the immersion fluids can be utilized to perform lithography at short wavelengths (e.g., in a range from about 120 nm to about 260 nm). Some embodiments can be used in a range of actinic radiation between about 140 nm and about 160 nm (e.g., about 157 nm). Immersion fluids can exhibit any number of advantageous features including a relatively high index of refraction (e.g., greater than about 1, or greater than about 1.3, or about greater than about 1.4) and/or a relatively low absorbance (e.g., lower than about 2 μm−1, or lower than about 1 μm−1, or lower than about 0.5 μm−1). Some immersion fluids can include silicon-containing compounds and/or germanium containing compounds. Such compounds can include at least one Ge—O bond or at least one Si—O bond. Such compounds can also include one or more fluorinated moieties.
摘要翻译：描述了用作浸液的组合物。通常，浸没流体可用于在短波长（例如，在约120nm至约260nm的范围内）进行光刻。一些实施方案可用于约140nm至约160nm（例如约157nm）之间的光化辐射范围。浸没流体可以显示任何数量的有利特征，包括相对较高的折射率（例如，大于约1，或大于约1.3，或约大于约1.4）和/或相对较低的吸光度（例如，低于约 2μm-1或低于约1μm-1或低于约0.5μm-1）。一些浸没流体可以包括含硅化合物和/或含锗化合物。这样的化合物可以包括至少一个Ge-O键或至少一个Si-O键。这样的化合物还可以包括一个或多个氟化部分。

2. 发明授权

US08551566B2 Directed material assembly 有权
标题翻译：定向材料组装
公开(公告)号：US08551566B2
公开(公告)日：2013-10-08
申请号：US12707129
申请日：2010-02-17
申请人： Theodore H. Fedynyshyn , Richard Kingsborough
发明人： Theodore H. Fedynyshyn , Richard Kingsborough
IPC分类号： B05D3/00 , B05D3/06
CPC分类号： G03F7/165 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0755 , G03F7/265 , H01L21/0337
摘要： Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air). The imaged surface can then be exposed to a self assembling material, such as a block copolymer, such that the surface can direct assembly of the self assembling material by preferential attachment of certain moieties of the block copolymer to imaged or non-imaged portions of the surface in order to form a selected pattern.
摘要翻译：公开了使用表面改性基材引导材料组装的方法。通过向基材施加第一表面剂，在基材上形成改性表面。将能量施加到改性表面以形成具有成像部分和非成像部分的成像表面。成像部分的特征在于与非成像部分的表面能不同的表面能。例如，施加的能量可以从成像部分去除附着的表面剂的至少一部分，以改变表面能。在一些优选的实施方案中，能量还可以改变表面剂而不引起氧化。为了避免氧化，例如，表面改性和/或能量施加可以在低氧环境中发生（例如，氧含量低于大约0.01Torr空气中的氧含量）。成像的表面然后可以暴露于自组装材料，例如嵌段共聚物，使得表面可以通过优先将嵌段共聚物的某些部分附着到成像或非成像部分上来引导自组装材料的组装表面以形成选定的图案。

3. 发明授权

US08110339B2 Multi-tone resist compositions 有权
标题翻译：多色抗蚀剂组合物
公开(公告)号：US08110339B2
公开(公告)日：2012-02-07
申请号：US12104486
申请日：2008-04-17
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03F7/20 , G03F7/213 , G03F7/22 , G03F7/30
CPC分类号： G03F7/095 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/2022 , G03F7/203 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： Multi-tone resists can enhance the resolution limit of a lithographic process by advantageously using the changeable solubility of a resist composition as a function of lithographic radiation dosage. By imaging a multi-tone resist with different doses of lithographic radiation in a selected pattern, the pattern can be imparted to the resist upon subsequent development of the resist. In some aspects, a resist composition is utilized having an aliphatic polymer (e.g., a copolymer with fluoropolymer units and/or methacrylate units) with acid labile groups and a plurality of crosslinkable groups that can be crosslinked to other portions of the aliphatic polymer. Other components such as base generators and/or crosslinking agents can also be included. Such compositions can be useful in extending the resolution of UV lithographic radiation processes (e.g., wavelengths less than 200 nm). Other aspects of such compositions and methods are also discussed.
摘要翻译：多色抗蚀剂可以通过有利地使用抗蚀剂组合物的可变溶解度作为光刻辐射剂量的函数来增强光刻工艺的分辨率极限。通过以选定的图案以不同剂量的光刻辐射成像多色调抗蚀剂，可以在抗蚀剂随后显影时将图案赋予抗蚀剂。在一些方面，使用具有脂肪族聚合物（例如与含氟聚合物单元和/或甲基丙烯酸酯单元的共聚物）与酸不稳定基团和多个可交联到脂族聚合物的其它部分的可交联基团的抗蚀剂组合物。还可以包括其它组分如碱发生剂和/或交联剂。这样的组合物可用于延长UV光刻辐射过程（例如，波长小于200nm）的分辨率。还讨论了这些组合物和方法的其它方面。

4. 发明授权

US07153630B2 Resist with reduced line edge roughness 失效
公开(公告)号：US07153630B2
公开(公告)日：2006-12-26
申请号：US11146597
申请日：2005-06-07
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392
摘要： Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.

5. 发明授权

US06794109B2 Low abosorbing resists for 157 nm lithography 失效
标题翻译：低吸收光阻抗157 nm光刻
公开(公告)号：US06794109B2
公开(公告)日：2004-09-21
申请号：US09791252
申请日：2001-02-23
申请人： Theodore H. Fedynyshyn , Roderick R. Kunz , Michael Sworin , Roger Sinta
发明人： Theodore H. Fedynyshyn , Roderick R. Kunz , Michael Sworin , Roger Sinta
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0046 , Y10S430/108 , Y10S430/115
摘要： The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.
摘要翻译：本发明提供了在波长小于约248nm的光刻中使用的光刻胶材料。更具体地说，本发明的光致抗蚀剂特别适用于157nm光刻。本发明的光致抗蚀剂组合物包括具有至少一个具有芳族部分的单体单元的聚合物。单体单元还包括至少一个与芳族部分连接的基团，例如吸电子基团。所附组包括至少一个CF键。聚合物还包括酸性羟基。本发明的光致抗蚀剂组合物可以在157nm处具有在1-5mum -1的范围内的吸光度，使其特别适合用作157nm光刻中的单层抗蚀剂。

6. 发明授权

US07622246B2 Contrast enhancing layers 有权
标题翻译：对比增强层
公开(公告)号：US07622246B2
公开(公告)日：2009-11-24
申请号：US11534347
申请日：2006-09-22
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03F7/20 , G03F7/095
CPC分类号： G03F7/11 , G03F7/0754 , G03F7/095 , G03F7/2041
摘要： Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.
摘要翻译：讨论了可以用作光致抗蚀剂上的保形掩模的对比增强层和其它材料。特别地，讨论了当使用短波长光化辐射（例如，波长低于200nm，例如193nm或157nm）进行光刻时可能是有利的方法和组合物。例如，包括含有机硅材料的对比度增强层可用于增强在下面的光致抗蚀剂层上形成的图案的对比度。含硅聚合物，低聚物和其它非聚合材料可用作有效的CEL材料。

7. 发明授权

US06468712B1 Resist materials for 157-nm lithography 失效
标题翻译：抗蚀材料用于157nm光刻
公开(公告)号：US06468712B1
公开(公告)日：2002-10-22
申请号：US09513792
申请日：2000-02-25
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03C1675
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.
摘要翻译：一种辐射敏感性树脂组合物，其包含光酸产生剂和具有一个或多个吸电子基团的脂族聚合物，所述吸电子基团与具有被保护的羟基的碳原子相邻或连接，其中所述保护基团在原位生成的酸存在下是不稳定的被描述。辐射敏感性树脂组合物可以用作适于通过等离子体蚀刻进行图像转印的抗蚀剂，并且能够以高分辨率和选择性获得具有高再现性的高精度和高精度的蚀刻图像。

8. 发明申请

US20080076060A1 CONTRAST ENHANCING LAYERS 有权
标题翻译：对比增强层
公开(公告)号：US20080076060A1
公开(公告)日：2008-03-27
申请号：US11534347
申请日：2006-09-22
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0754 , G03F7/095 , G03F7/2041
摘要： Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.
摘要翻译：讨论了可以用作光致抗蚀剂上的保形掩模的对比增强层和其它材料。特别地，讨论了当使用短波长光化辐射（例如，波长低于200nm，例如193nm或157nm）进行光刻时可能是有利的方法和组合物。例如，包括含有机硅材料的对比度增强层可用于增强在下面的光致抗蚀剂层上形成的图案的对比度。含硅聚合物，低聚物和其它非聚合材料可用作有效的CEL材料。

9. 发明授权

US06936398B2 Resist with reduced line edge roughness 失效
标题翻译：抵抗线边缘粗糙度降低
公开(公告)号：US06936398B2
公开(公告)日：2005-08-30
申请号：US09851952
申请日：2001-05-09
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0392
摘要： Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.
摘要翻译：描述了相对于存在的光酸产生剂的浓度及其制备物，含有至少约0.2摩尔比的碱的新型光致抗蚀剂。已经发现，包含足够量的碱抵消光致酸发生剂的有害影响，从而提供具有亚微米线宽分辨率的抗蚀剂。

10. 发明授权

US06815145B2 Resist materials for 157-nm lithography 失效
标题翻译：抗蚀材料用于157nm光刻
公开(公告)号：US06815145B2
公开(公告)日：2004-11-09
申请号：US10271807
申请日：2002-10-16
申请人： Theodore H. Fedynyshyn
发明人： Theodore H. Fedynyshyn
IPC分类号： G03C173
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.
摘要翻译：一种辐射敏感性树脂组合物，其包含光酸产生剂和具有一个或多个吸电子基团的脂族聚合物，所述吸电子基团与具有被保护的羟基的碳原子相邻或连接，其中所述保护基团在原位生成的酸存在下是不稳定的被描述。辐射敏感性树脂组合物可以用作适于通过等离子体蚀刻进行图像转印的抗蚀剂，并且能够以高分辨率和选择性获得具有高再现性的高精度和高精度的蚀刻图像。

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