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    • 1. 发明授权
    • Directed material assembly
    • 定向材料组装
    • US08551566B2
    • 2013-10-08
    • US12707129
    • 2010-02-17
    • Theodore H. FedynyshynRichard Kingsborough
    • Theodore H. FedynyshynRichard Kingsborough
    • B05D3/00B05D3/06
    • G03F7/165B81C1/00031B81C2201/0149B81C2201/0198G03F7/0755G03F7/265H01L21/0337
    • Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air). The imaged surface can then be exposed to a self assembling material, such as a block copolymer, such that the surface can direct assembly of the self assembling material by preferential attachment of certain moieties of the block copolymer to imaged or non-imaged portions of the surface in order to form a selected pattern.
    • 公开了使用表面改性基材引导材料组装的方法。 通过向基材施加第一表面剂,在基材上形成改性表面。 将能量施加到改性表面以形成具有成像部分和非成像部分的成像表面。 成像部分的特征在于与非成像部分的表面能不同的表面能。 例如,施加的能量可以从成像部分去除附着的表面剂的至少一部分,以改变表面能。 在一些优选的实施方案中,能量还可以改变表面剂而不引起氧化。 为了避免氧化,例如,表面改性和/或能量施加可以在低氧环境中发生(例如,氧含量低于大约0.01Torr空气中的氧含量)。 成像的表面然后可以暴露于自组装材料,例如嵌段共聚物,使得表面可以通过优先将嵌段共聚物的某些部分附着到成像或非成像部分上来引导自组装材料的组装 表面以形成选定的图案。
    • 2. 发明授权
    • Multi-tone resist compositions
    • 多色抗蚀剂组合物
    • US08110339B2
    • 2012-02-07
    • US12104486
    • 2008-04-17
    • Theodore H. Fedynyshyn
    • Theodore H. Fedynyshyn
    • G03F7/20G03F7/213G03F7/22G03F7/30
    • G03F7/095G03F7/0046G03F7/0382G03F7/0392G03F7/2022G03F7/203Y10S430/108Y10S430/111Y10S430/143
    • Multi-tone resists can enhance the resolution limit of a lithographic process by advantageously using the changeable solubility of a resist composition as a function of lithographic radiation dosage. By imaging a multi-tone resist with different doses of lithographic radiation in a selected pattern, the pattern can be imparted to the resist upon subsequent development of the resist. In some aspects, a resist composition is utilized having an aliphatic polymer (e.g., a copolymer with fluoropolymer units and/or methacrylate units) with acid labile groups and a plurality of crosslinkable groups that can be crosslinked to other portions of the aliphatic polymer. Other components such as base generators and/or crosslinking agents can also be included. Such compositions can be useful in extending the resolution of UV lithographic radiation processes (e.g., wavelengths less than 200 nm). Other aspects of such compositions and methods are also discussed.
    • 多色抗蚀剂可以通过有利地使用抗蚀剂组合物的可变溶解度作为光刻辐射剂量的函数来增强光刻工艺的分辨率极限。 通过以选定的图案以不同剂量的光刻辐射成像多色调抗蚀剂,可以在抗蚀剂随后显影时将图案赋予抗蚀剂。 在一些方面,使用具有脂肪族聚合物(例如与含氟聚合物单元和/或甲基丙烯酸酯单元的共聚物)与酸不稳定基团和多个可交联到脂族聚合物的其它部分的可交联基团的抗蚀剂组合物。 还可以包括其它组分如碱发生剂和/或交联剂。 这样的组合物可用于延长UV光刻辐射过程(例如,波长小于200nm)的分辨率。 还讨论了这些组合物和方法的其它方面。
    • 5. 发明授权
    • Immersion fluids for lithography
    • 用于光刻的浸液
    • US07745102B2
    • 2010-06-29
    • US11754615
    • 2007-05-29
    • Theodore H. FedynyshynIndira Pottebaum
    • Theodore H. FedynyshynIndira Pottebaum
    • G03F7/26
    • G03F7/2041C07F7/21
    • Compositions for use as immersion fluids are described. In general, the immersion fluids can be utilized to perform lithography at short wavelengths (e.g., in a range from about 120 nm to about 260 nm). Some embodiments can be used in a range of actinic radiation between about 140 nm and about 160 nm (e.g., about 157 nm). Immersion fluids can exhibit any number of advantageous features including a relatively high index of refraction (e.g., greater than about 1, or greater than about 1.3, or about greater than about 1.4) and/or a relatively low absorbance (e.g., lower than about 2 μm−1, or lower than about 1 μm−1, or lower than about 0.5 μm−1). Some immersion fluids can include silicon-containing compounds and/or germanium containing compounds. Such compounds can include at least one Ge—O bond or at least one Si—O bond. Such compounds can also include one or more fluorinated moieties.
    • 描述了用作浸液的组合物。 通常,浸没流体可用于在短波长(例如,在约120nm至约260nm的范围内)进行光刻。 一些实施方案可用于约140nm至约160nm(例如约157nm)之间的光化辐射范围。 浸没流体可以显示任何数量的有利特征,包括相对较高的折射率(例如,大于约1,或大于约1.3,或约大于约1.4)和/或相对较低的吸光度(例如,低于约 2μm-1或低于约1μm-1或低于约0.5μm-1)。 一些浸没流体可以包括含硅化合物和/或含锗化合物。 这样的化合物可以包括至少一个Ge-O键或至少一个Si-O键。 这样的化合物还可以包括一个或多个氟化部分。
    • 6. 发明授权
    • Contrast enhancing layers
    • 对比增强层
    • US07622246B2
    • 2009-11-24
    • US11534347
    • 2006-09-22
    • Theodore H. Fedynyshyn
    • Theodore H. Fedynyshyn
    • G03F7/20G03F7/095
    • G03F7/11G03F7/0754G03F7/095G03F7/2041
    • Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.
    • 讨论了可以用作光致抗蚀剂上的保形掩模的对比增强层和其它材料。 特别地,讨论了当使用短波长光化辐射(例如,波长低于200nm,例如193nm或157nm)进行光刻时可能是有利的方法和组合物。 例如,包括含有机硅材料的对比度增强层可用于增强在下面的光致抗蚀剂层上形成的图案的对比度。 含硅聚合物,低聚物和其它非聚合材料可用作有效的CEL材料。
    • 9. 发明申请
    • CONTRAST ENHANCING LAYERS
    • 对比增强层
    • US20080076060A1
    • 2008-03-27
    • US11534347
    • 2006-09-22
    • Theodore H. Fedynyshyn
    • Theodore H. Fedynyshyn
    • G03C1/00
    • G03F7/11G03F7/0754G03F7/095G03F7/2041
    • Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.
    • 讨论了可以用作光致抗蚀剂上的保形掩模的对比增强层和其它材料。 特别地,讨论了当使用短波长光化辐射(例如,波长低于200nm,例如193nm或157nm)进行光刻时可能是有利的方法和组合物。 例如,包括含有机硅材料的对比度增强层可用于增强在下面的光致抗蚀剂层上形成的图案的对比度。 含硅聚合物,低聚物和其它非聚合材料可用作有效的CEL材料。