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1. 发明申请

US20180019297A1 METHOD AND STRUCTURE FOR DUAL SHEET RESISTANCE TRIMMABLE THIN FILM RESISTORS AT SAME LEVEL 有权
公开(公告)号：US20180019297A1
公开(公告)日：2018-01-18
申请号：US15209696
申请日：2016-07-13
申请人： Texas Instruments Incorporated , TEXAS INSTRUMENTS DEUTSCHLAND GMBH
发明人： Christoph Andreas Othmar Dirnecker , Wolfgang Schwartz , Doug Weiser , Joel Martin Halbert , Joseph Anthony DeSantis , Karsten Jens Spinger
IPC分类号： H01L49/02 , H01L23/522 , H01L21/268 , H01L21/027 , H01L21/3213 , H01L21/3205 , H01L23/528 , H01L21/768
CPC分类号： H01L28/24 , H01L21/0273 , H01L21/268 , H01L21/32051 , H01L21/32139 , H01L21/76802 , H01L21/76877 , H01L23/5226 , H01L23/5228 , H01L23/528
摘要： An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

2. 发明授权

US11990879B2 Fully-differential amplifier with input common-mode voltage control 有权
公开(公告)号：US11990879B2
公开(公告)日：2024-05-21
申请号：US17316775
申请日：2021-05-11
申请人： Texas Instruments Incorporated
发明人： Joel Martin Halbert , Xiyao Zhang
IPC分类号： H03F3/45
CPC分类号： H03F3/45475 , H03F2200/129
摘要： A fully-differential amplifier (FDA) includes a core differential amplifier and a common-mode input voltage control circuit. The core differential amplifier includes differential inputs. The common-mode input voltage control circuit is coupled to the differential inputs. The common-mode input voltage control circuit is configured to generate an error signal as a difference of an input common mode voltage at the differential inputs and a target common mode input voltage (VICM); and to adjust the input common mode voltage to the VICM based on the error signal.

3. 发明授权

US11764740B2 Control of base currents for output driver transistors in amplifiers 有权
公开(公告)号：US11764740B2
公开(公告)日：2023-09-19
申请号：US17462930
申请日：2021-08-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Tyler James Archer , Joel Martin Halbert , Bharath Karthik Vasan
IPC分类号： H03F3/04 , H03F3/26
CPC分类号： H03F3/04
摘要： Examples of amplifiers accurately generate control currents for control terminals of output drivers using current-replication transistors and current mirrors. An input terminal of a first current mirror is coupled to the control terminal of a first current-replication transistor, and an input terminal of a second current mirror is coupled to the control terminal of a second current-replication transistor. The output terminals of the first and second current mirrors are coupled to the control terminals of first and second output drivers, respectively. First and second intermediate currents indicative of first and second currents flowing to the first and second output driver elements, respectively, are generated. Using the first and second current mirrors, first and second control currents are generated to control the first and second output driver elements, respectively, by scaling the first and second intermediate currents according to the gain factors of the current mirrors.

4. 发明授权

US11676993B2 Method and structure for dual sheet resistance trimmable thin film resistors 有权
公开(公告)号：US11676993B2
公开(公告)日：2023-06-13
申请号：US17014094
申请日：2020-09-08
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Christoph Andreas Othmar Dirnecker , Wolfgang Schwartz , Doug Weiser , Joel Martin Halbert , Joseph Anthony DeSantis , Karsten Jens Spinger
IPC分类号： H01L23/522 , H01L49/02 , H01L21/3213 , H01L21/027 , H01L21/268
CPC分类号： H01L28/24 , H01L21/0273 , H01L21/268 , H01L21/32139 , H01L23/5226 , H01L23/5228
摘要： In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

5. 发明申请

US20230060318A1 CONTROL OF INPUT BIAS CURRENT MODULATION IN AMPLIFIERS 有权
公开(公告)号：US20230060318A1
公开(公告)日：2023-03-02
申请号：US17462868
申请日：2021-08-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Tyler James Archer , Paul Gerard Damitio , Joel Martin Halbert , Bharath Karthik Vasan
IPC分类号： H03F3/04
摘要： Examples of amplifiers use current-replication transistors and a separation circuit coupled to such transistors to separate error current components from other current components in a pre-driver of an amplifier. In response to driving the current-replication transistors with the separated error current components, replica base current components that approximate error-modulation components of the pre-driver base currents are generated. Replica-current subtraction circuitry coupled to the current-replication transistors then subtract the replica base current components from the pre-driver base currents, affecting cancellation of the error-modulation components of the pre-driver base currents.

6. 发明申请

US20180261664A1 METHOD AND STRUCTURE FOR DUAL SHEET RESISTANCE TRIMMABLE THIN FILM RESISTORS 审中-公开
公开(公告)号：US20180261664A1
公开(公告)日：2018-09-13
申请号：US15976357
申请日：2018-05-10
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Christoph Andreas Othmar Dirnecker , Wolfgang Schwartz , Doug Weiser , Joel Martin Halbert , Joseph Anthony DeSantis , Karsten Jens Spinger
IPC分类号： H01L49/02 , H01L21/3213 , H01L21/027 , H01L21/268 , H01L21/3205 , H01L21/768 , H01L23/528 , H01L23/522
CPC分类号： H01L28/24 , H01L21/0273 , H01L21/268 , H01L21/32139 , H01L23/5226 , H01L23/5228
摘要： An electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate and having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate and having a second sheet resistance that is different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

7. 发明授权

US09991329B2 Method and structure for dual sheet resistance trimmable thin film resistors at same level 有权
公开(公告)号：US09991329B2
公开(公告)日：2018-06-05
申请号：US15209696
申请日：2016-07-13
申请人： Texas Instruments Incorporated
发明人： Christoph Andreas Othmar Dirnecker , Wolfgang Schwartz , Doug Weiser , Joel Martin Halbert , Joseph Anthony DeSantis , Karsten Jens Spinger
IPC分类号： H01L49/02 , H01L23/522 , H01L23/528 , H01L21/3205 , H01L21/768 , H01L21/3213 , H01L21/027 , H01L21/268
CPC分类号： H01L28/24 , H01L21/0273 , H01L21/268 , H01L21/32051 , H01L21/32139 , H01L21/76802 , H01L21/76877 , H01L23/5226 , H01L23/5228 , H01L23/528
摘要： An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

8. 发明授权

US11722104B2 Control of input bias current modulation in amplifiers 有权
公开(公告)号：US11722104B2
公开(公告)日：2023-08-08
申请号：US17462868
申请日：2021-08-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Tyler James Archer , Paul Gerard Damitio , Joel Martin Halbert , Bharath Karthik Vasan
IPC分类号： H03F3/04 , H03F3/26
CPC分类号： H03F3/04
摘要： Examples of amplifiers use current-replication transistors and a separation circuit coupled to such transistors to separate error current components from other current components in a pre-driver of an amplifier. In response to driving the current-replication transistors with the separated error current components, replica base current components that approximate error-modulation components of the pre-driver base currents are generated. Replica-current subtraction circuitry coupled to the current-replication transistors then subtract the replica base current components from the pre-driver base currents, affecting cancellation of the error-modulation components of the pre-driver base currents.

9. 发明授权

US10522663B2 Integrated JFET structure with implanted backgate 有权
公开(公告)号：US10522663B2
公开(公告)日：2019-12-31
申请号：US15999542
申请日：2018-08-20
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Alexei Sadovnikov , Doug Weiser , Mattias Erik Dahlstrom , Joel Martin Halbert
IPC分类号： H01L29/66 , H01L29/808 , H01L29/10 , H01L21/265 , H01L21/324 , H01L23/535 , H01L29/06
摘要： A method of forming an electronic device includes forming first, second and third doped regions at a surface of a semiconductor substrate. A first buried layer is located within the semiconductor substrate below the first, second and third doped regions. Fourth and fifth doped regions are laterally spaced apart along the substrate and extend from the surface of the substrate to the first buried layer, the first, second and third doped regions being located between the fourth and fifth doped regions. A second buried layer is formed within the substrate and between the fourth and fifth doped regions such that a first portion of the semiconductor substrate is located between the first buried layer and the second buried layer, and a second portion of the semiconductor substrate is located between the first, second and third doped regions and the second buried layer.

10. 发明授权

US09507409B2 Transition rate controlled bus driver circuit with reduced load sensitivity 有权
标题翻译：转换速率控制总线驱动电路，降低负载灵敏度
公开(公告)号：US09507409B2
公开(公告)日：2016-11-29
申请号：US13923339
申请日：2013-06-20
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Joel Martin Halbert , Vinay Agarwal
IPC分类号： G06F13/14 , G06F1/32 , G06F13/38
CPC分类号： G06F1/3296 , G06F13/385
摘要： A bus driver circuit (FIG. 2) is disclosed. The circuit includes a signal lead of a bus (200) and a reference terminal (Vss). A first transistor (MN0) has a first control terminal and has a first current path coupled to the reference terminal. A second transistor (MN1) has a second control terminal coupled to the first control terminal and has a second current path coupled between the signal lead and the reference terminal. A third transistor (MP0) is arranged to provide a first current through the first current path when the signal lead is in a first logic state (high). A fourth transistor (MP1) is arranged to apply a voltage to the second control terminal when the signal lead is in a second logic state (low).
摘要翻译：公开了一种总线驱动器电路（图2）。电路包括总线（200）和参考端子（Vss）的信号引线。第一晶体管（MN0）具有第一控制端子并且具有耦合到参考端子的第一电流通路。第二晶体管（MN1）具有耦合到第一控制端子的第二控制端子，并且具有耦合在信号引线和参考端子之间的第二电流通路。第三晶体管（MP0）布置成当信号引线处于第一逻辑状态（高）时提供通过第一电流路径的第一电流。第四晶体管（MP1）被布置成当信号引线处于第二逻辑状态（低）时向第二控制端施加电压。

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