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1. 发明授权

US5994030A Pattern-forming method and lithographic system 失效
公开(公告)号：US5994030A
公开(公告)日：1999-11-30
申请号：US30888
申请日：1998-02-26
申请人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/203 , G03F7/2059 , G03F7/7045 , H01J37/3174
摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

2. 发明授权

US6093931A Pattern-forming method and lithographic system 失效
标题翻译：图案形成方法和平版印刷系统
公开(公告)号：US6093931A
公开(公告)日：2000-07-25
申请号：US410018
申请日：1999-10-01
申请人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/203 , G03F7/2059 , G03F7/7045 , H01J37/3174
摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.
摘要翻译：通过光分辨率形成超过曝光分辨率极限的粗糙图案。通过电荷束曝光形成不超过曝光的分辨率极限的精细图案。结合粗糙图案和精细图案产生期望的图案。曝光和电荷束曝光之间的工作共享表现出高曝光量和电荷束曝光的优异分辨能力。

3. 发明授权

US5933211A Charged beam lithography apparatus and method thereof 失效
标题翻译：带电光束光刻设备及其方法
公开(公告)号：US5933211A
公开(公告)日：1999-08-03
申请号：US917212
申请日：1997-08-25
申请人： Tetsuro Nakasugi , Yumi Watanabe
发明人： Tetsuro Nakasugi , Yumi Watanabe
IPC分类号： G21K5/04 , G01Q60/00 , G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , G03B27/00 , G01N23/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/31774
摘要： A charged beam lithography apparatus simultaneously uses multiple charged beams to irradiate a workpiece. In specific embodiments, collimators are employed to assist in aligning the multiple charged beams by eliminating "noise" from reflections of other beams. Each collimator is positioned to correspond with respective of the charged beams and detectors for detecting reflected particles from the charged beams. The particles are reflected from particular marks used in the alignment process. Each collimator helps to prevent particles from adjacent charged beams from entering a detector that corresponds with a specific charged beam.
摘要翻译：带电光束光刻设备同时使用多个带电光束照射工件。在具体实施例中，准直仪用于通过从其他光束的反射中消除“噪声”来帮助对准多个带电波束。每个准直器被定位成对应于相应的带电束和检测器，用于检测来自带电束的反射粒子。颗粒从对准过程中使用的特定标记反射。每个准直器有助于防止相邻带电光束的粒子进入与特定带电束对应的检测器。

4. 发明授权

US6140654A Charged beam lithography apparatus and method thereof 失效
标题翻译：带电光束光刻设备及其方法
公开(公告)号：US6140654A
公开(公告)日：2000-10-31
申请号：US326631
申请日：1999-06-07
申请人： Tetsuro Nakasugi , Yumi Watanabe
发明人： Tetsuro Nakasugi , Yumi Watanabe
IPC分类号： G21K5/04 , G01Q60/00 , G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/30 , H01J37/244
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/31774
摘要： A charged beam lithography method simultaneously uses multiple charged beams to irradiate a workpiece. In specific embodiments, collimators are employed to assist in aligning the multiple charged beams by eliminating "noise" from reflections of other beams. Each collimator is positioned to correspond with respective of the charged beams and detectors for detecting reflected particles from the charged beams. The particles are reflected from particular marks used in the alignment process. Each collimator helps to prevent particles from adjacent charged beams from entering a detector that corresponds with a specific charged beam
摘要翻译：带电光束光刻法同时使用多个带电光束照射工件。在具体实施例中，准直仪用于通过从其他光束的反射中消除“噪声”来帮助对准多个带电波束。每个准直器被定位成对应于相应的带电束和检测器，用于检测来自带电束的反射粒子。颗粒从对准过程中使用的特定标记反射。每个准直器有助于防止相邻带电光束的粒子进入与特定带电束对应的检测器

5. 发明授权

US08883373B2 Method for manufacturing photo mask, method for manufacturing semiconductor device, and program 有权
标题翻译：制造光掩模的方法，制造半导体器件的方法和程序
公开(公告)号：US08883373B2
公开(公告)日：2014-11-11
申请号：US13679396
申请日：2012-11-16
申请人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
发明人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
IPC分类号： G03F1/62 , G03F1/64
CPC分类号： G03F1/62
摘要： According to one embodiment, a method for manufacturing a photo mask, includes acquiring first data on respective shapes of a plurality of mask substrates, acquiring second data on respective shapes of a plurality of pellicles, and determining a combination of the mask substrate and the pellicle based on the first data and the second data.
摘要翻译：根据一个实施例，一种制造光掩模的方法包括：获取关于多个掩模基板的各个形状的第一数据，获取关于多个防护薄膜的各自形状的第二数据，以及确定掩模基板和防护薄膜组件的组合基于第一数据和第二数据。

6. 发明申请

US20140072668A1 MOLD AND MOLD BLANK SUBSTRATE 审中-公开
标题翻译：模具和模具底座
公开(公告)号：US20140072668A1
公开(公告)日：2014-03-13
申请号：US13731617
申请日：2012-12-31
申请人： Ikuo YONEDA , Tetsuro Nakasugi
发明人： Ikuo YONEDA , Tetsuro Nakasugi
IPC分类号： B29C59/02
CPC分类号： B29C59/02 , B29C33/424 , G03F7/0002 , Y10T428/24488
摘要： According to one embodiment, a mold includes a base material, a pedestal portion and a pattern portion. The base material includes a first surface and a second surface. The pedestal portion protruded from the first surface of the base material and includes a side surface. The pattern portion is provided in the pedestal portion and includes an concave-convex pattern. The pedestal portion includes a first region and a second region. The first region is provided with the concave-convex pattern. The second region is provided between the first region and the side surface. The second region has maximum height equal to maximum height of the first region. The second region has a first height of the second region on the side surface side and a second height of the second region on the first region side. The first height is lower than the second height.
摘要翻译：根据一个实施例，模具包括基底材料，基座部分和图案部分。基材包括第一表面和第二表面。所述基座部从所述基材的第一表面突出并且包括侧面。图案部分设置在基座部分中并且包括凹凸图案。基座部分包括第一区域和第二区域。第一区域设置有凹凸图案。第二区域设置在第一区域和侧面之间。第二区域具有等于第一区域的最大高度的最大高度。所述第二区域具有在所述第一区域侧上的所述第二区域的侧表面侧的第一高度和所述第二区域的第二高度。第一个高度低于第二个高度。

7. 发明申请

US20130130157A1 METHOD FOR MANUFACTURING PHOTO MASK, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM 有权
标题翻译：制造摄影胶片的方法，制造半导体器件的方法和程序
公开(公告)号：US20130130157A1
公开(公告)日：2013-05-23
申请号：US13679396
申请日：2012-11-16
申请人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
发明人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
IPC分类号： G03F1/62
CPC分类号： G03F1/62
摘要： According to one embodiment, a method for manufacturing a photo mask, includes acquiring first data on respective shapes of a plurality of mask substrates, acquiring second data on respective shapes of a plurality of pellicles, and determining a combination of the mask substrate and the pellicle based on the first data and the second data.
摘要翻译：根据一个实施例，一种制造光掩模的方法包括：获取关于多个掩模基板的各个形状的第一数据，获取关于多个防护薄膜的各自形状的第二数据，以及确定掩模基板和防护薄膜组件的组合基于第一数据和第二数据。

8. 发明申请

US20130077066A1 PATTERN FORMING APPARATUS 审中-公开
标题翻译：图案形成装置
公开(公告)号：US20130077066A1
公开(公告)日：2013-03-28
申请号：US13428519
申请日：2012-03-23
申请人： Ryoichi INANAMI , Tetsuro Nakasugi
发明人： Ryoichi INANAMI , Tetsuro Nakasugi
IPC分类号： G03B27/74
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern forming apparatus includes a stage provided under a lower surface of a substrate, a probe provided above an upper surface of the substrate, a drive unit which drives at least one of the stage and the probe, a monitor/lithography unit connected to the probe, and a control unit which controls the drive unit and the monitor/lithography unit. The control unit is configured to change a relative position between the probe and the substrate, and form a first pattern in an area direct above a second pattern after detecting the first pattern in the substrate by the probe.
摘要翻译：根据一个实施例，图案形成装置包括设置在基板的下表面下方的台，设置在基板的上表面上方的探针，驱动台和探针中的至少一个的驱动单元，监视器/ 连接到探针的光刻单元，以及控制驱动单元和监视器/光刻单元的控制单元。控制单元被配置为改变探针和衬底之间的相对位置，并且在通过探针检测到衬底中的第一图案之后，在直接在第二图案之上的区域中形成第一图案。

9. 发明授权

US08180472B2 Control method for semiconductor manufacturing apparatus, control system for semiconductor manufacturing apparatus, and manufacturing method for semiconductor device 失效
标题翻译：半导体制造装置的控制方法，半导体制造装置的控制系统以及半导体装置的制造方法
公开(公告)号：US08180472B2
公开(公告)日：2012-05-15
申请号：US12497349
申请日：2009-07-02
申请人： Masayuki Hatano , Tetsuro Nakasugi
发明人： Masayuki Hatano , Tetsuro Nakasugi
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31265 , G05B2219/32196 , Y02P90/22
摘要： A control method for a semiconductor manufacturing apparatus, comprising: generating, as log data, a history of operation states of the semiconductor manufacturing apparatus when a wafer is processed by the semiconductor manufacturing apparatus; specifying, based on the log data, processing results in which operation states of the semiconductor manufacturing apparatus are abnormal states out of processing results after the processing of the wafer processed by the semiconductor manufacturing apparatus as abnormal processing results; creating control data for the semiconductor manufacturing apparatus based on the processing results and the abnormal processing results; and controlling the processing by the semiconductor manufacturing apparatus using the control data.
摘要翻译：一种半导体制造装置的控制方法，包括：当半导体制造装置处理晶片时，产生作为对数数据的半导体制造装置的工作状态的历史; 基于对数数据，指定在由半导体制造装置处理的晶片处理之后的处理结果中作为异常处理结果的半导体制造装置的操作状态为异常状态的处理结果; 基于处理结果和异常处理结果创建半导体制造装置的控制数据; 以及使用控制数据来控制半导体制造装置的处理。

10. 发明授权

US08118585B2 Pattern formation method and a method for manufacturing a semiconductor device 有权
标题翻译：图案形成方法及半导体装置的制造方法
公开(公告)号：US08118585B2
公开(公告)日：2012-02-21
申请号：US12882944
申请日：2010-09-15
申请人： Masayuki Hatano , Suigen Kyoh , Tetsuro Nakasugi
发明人： Masayuki Hatano , Suigen Kyoh , Tetsuro Nakasugi
IPC分类号： A01J21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/00
摘要： In one embodiment, a pattern formation method is disclosed. The method can place a liquid resin material on a workpiece substrate. The method can press a template against the resin material and measuring distance between a lower surface of a projection of the template and an upper surface of the workpiece substrate. The template includes a pattern formation region and a circumferential region around the pattern formation region. A pattern for circuit pattern formation is formed in the pattern formation region and the projection is formed in the circumferential region. The method can form a resin pattern by curing the resin material in a state of pressing the template. In addition, the method can separate the template from the resin pattern.
摘要翻译：在一个实施例中，公开了图案形成方法。该方法可以将液态树脂材料放置在工件基板上。该方法可以将模板压靠树脂材料并测量模板的突起的下表面与工件基板的上表面之间的距离。模板包括图案形成区域和围绕图案形成区域的周边区域。在图案形成区域中形成用于电路图案形成的图案，并且在周向区域中形成突起。该方法可以通过在压制模板的状态下固化树脂材料来形成树脂图案。此外，该方法可以将模板与树脂图案分离。

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