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1. 发明授权

US5014132A CCD imager 失效
标题翻译： CCD成像仪
公开(公告)号：US5014132A
公开(公告)日：1991-05-07
申请号：US383179
申请日：1989-07-21
申请人： Tetsuro Kumesawa , Yasuo Kanou , Osamu Nishima , Masaaki Isobe , Hiromichi Matsui
发明人： Tetsuro Kumesawa , Yasuo Kanou , Osamu Nishima , Masaaki Isobe , Hiromichi Matsui
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/359 , H04N5/3728
CPC分类号： H01L27/14831
摘要： A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.

2. 发明授权

US5471246A Apparatus for determining charge/voltage conversion ratios in charge coupled devices 失效
标题翻译：用于确定电荷耦合器件中的充电/电压转换比的装置
公开(公告)号：US5471246A
公开(公告)日：1995-11-28
申请号：US232421
申请日：1994-04-21
申请人： Osamu Nishima , Tomoyuki Suzuki , Kazuhiko Nishibori
发明人： Osamu Nishima , Tomoyuki Suzuki , Kazuhiko Nishibori
IPC分类号： G01R31/26 , H01L27/14 , H01L27/146 , H01L27/148 , H01L29/768 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/3728 , H04N17/00
CPC分类号： H01L29/76816 , H04N5/335
摘要： A method for determining a charge/voltage conversion ratio of a solid state image pickup element with an electronic shutter function which is capable of transferring signal charge accumulated in a photosensitive portion to a substrate. A voltage of a predetermined first level is applied to the substrate to measure an output voltage at an output portion, and then a voltage of a second level higher than that of the first level is applied to the substrate to measure a current flowing through the substrate, thereby obtaining a charge/voltage conversion ratio in accordance with a ratio between the measured output voltage and the measured current.
摘要翻译：一种用于确定具有电子快门功能的固体摄像元件的充电/电压转换比的方法，该电子快门功能能够将感光部分中累积的信号电荷转移到基板。将预定的第一电平的电压施加到衬底以测量输出部分处的输出电压，然后将比第一电平高的第二电平的电压施加到衬底以测量流过衬底的电流，从而根据测量的输出电压和测量的电流之间的比率获得充电/电压转换比。

3. 发明授权

US5498887A Output circuit device for a charge transfer element having tripartite diffusion layer 失效
标题翻译：具有三方扩散层的电荷转移元件的输出电路装置
公开(公告)号：US5498887A
公开(公告)日：1996-03-12
申请号：US393827
申请日：1995-02-24
申请人： Hiroaki Ohki , Osamu Nishima , Hiroyuki Mori , Junya Suzuki
发明人： Hiroaki Ohki , Osamu Nishima , Hiroyuki Mori , Junya Suzuki
IPC分类号： H01L21/8234 , H01L29/08 , H01L29/768 , H01L27/148
CPC分类号： H01L29/0847 , H01L21/823406 , H01L29/76816
摘要： A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusion layer. Further, a third diffusion layer in which phosphor of a high concentration is formed in the range of the second diffusion layer on the surface of the semiconductor body in a deeper condition than the first diffusion layer is formed.
摘要翻译：在半导体本体中形成有低浓度荧光体扩散的第一扩散层，在第一扩散层的上表面部分形成有高浓度砷或锑的第二扩散层。此外，形成第三扩散层，其中在半导体本体的表面上的第二扩散层的范围内形成的浓度较高的荧光体处于比第一扩散层更深的状态。

4. 发明授权

US5432364A Output circuit device for charge transfer element 失效
标题翻译：电荷转移元件的输出电路装置
公开(公告)号：US5432364A
公开(公告)日：1995-07-11
申请号：US180283
申请日：1994-01-12
申请人： Hiroaki Ohki , Osamu Nishima , Hiroyuki Mori , Junya Suzuki
发明人： Hiroaki Ohki , Osamu Nishima , Hiroyuki Mori , Junya Suzuki
IPC分类号： H01L21/8234 , H01L29/08 , H01L29/768 , H01L29/78
CPC分类号： H01L29/0847 , H01L21/823406 , H01L29/76816
摘要： An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage his constructed such that a gate oxide film of a driving side MOS transistor of a first stage source follower which receives signal charge is formed as a thinner film than gate oxide films of the other MOS transistors in the same circuit to reduce the 1/f noise.
摘要翻译：一种输出电路装置，用于检测并转换从CCD的电荷转移部分传送到其的信号电荷为信号电压，其构成为使得形成接收信号电荷的第一级源极跟随器的驱动侧MOS晶体管的栅极氧化膜作为比同一电路中其他MOS晶体管的栅极氧化膜更薄的薄膜，以减少1 / f噪声。

5. 发明授权

US5569616A Process for forming an output circuit device for a charge transfer element having tripartite diffusion layer 失效
标题翻译：用于形成具有三方扩散层的电荷转移元件的输出电路器件的工艺
公开(公告)号：US5569616A
公开(公告)日：1996-10-29
申请号：US446251
申请日：1995-05-22
申请人： Hiroaki Ohki , Osamu Nishima , Hiroyuki Mori , Junya Suzuki
发明人： Hiroaki Ohki , Osamu Nishima , Hiroyuki Mori , Junya Suzuki
IPC分类号： H01L21/8234 , H01L29/08 , H01L29/768 , H01L21/265 , H01L21/22
CPC分类号： H01L29/0847 , H01L21/823406 , H01L29/76816
摘要： An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage and a method of forming same. A first diffusion region is formed by diffusing into the semiconductor body a low concentration of an impurity having a conduction type opposite to that of said semiconductor body and having a high diffusion coefficient. A second diffusion region is formed by diffusing into an upper surface portion of the first diffusion region, and in self-alignment therewith, a high concentration of an impurity having a low diffusion coefficient. A third diffusion region is formed by diffusing into the first and second diffusion regions, and in self-alignment therewith, a high concentration of an impurity having a high diffusion coefficient, such that the third diffusion region extends from a surface of said semiconductor body through said first and second diffusion regions to beneath the first diffusion region. A wiring line is formed on the semiconductor body such that the first, second and third diffusion regions lie beneath the wiring line. The high and low diffusion coefficients are high and low relative to one another, and the high and low concentrations are high and low relative to one another.
摘要翻译：一种输出电路装置，用于检测和转换从CCD的电荷转移部分传送到其的信号电荷为信号电压，以及形成信号电压的方法。第一扩散区域通过向半导体体内扩散低浓度的具有与所述半导体本体相反的导电类型并具有高扩散系数的杂质形成。第二扩散区域通过扩散到第一扩散区域的上表面部分中并与其自对准形成，具有高浓度的扩散系数低的杂质。第三扩散区域通过扩散到第一和第二扩散区域中，并且与其自身对准，具有高浓度的具有高扩散系数的杂质，使得第三扩散区域从所述半导体主体的表面延伸通过所述第一和第二扩散区域到所述第一扩散区域的下方。在半导体本体上形成布线，使得第一，第二和第三扩散区域位于布线下方。高扩散系数和低扩散系数相对于彼此高和低，并且高和低浓度相对于彼此高和低。

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