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1. 发明授权

US5014132A CCD imager 失效
标题翻译： CCD成像仪
公开(公告)号：US5014132A
公开(公告)日：1991-05-07
申请号：US383179
申请日：1989-07-21
申请人： Tetsuro Kumesawa , Yasuo Kanou , Osamu Nishima , Masaaki Isobe , Hiromichi Matsui
发明人： Tetsuro Kumesawa , Yasuo Kanou , Osamu Nishima , Masaaki Isobe , Hiromichi Matsui
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/359 , H04N5/3728
CPC分类号： H01L27/14831
摘要： A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.

2. 发明授权

US3975760A Solid state camera 失效
标题翻译：固态摄像头
公开(公告)号：US3975760A
公开(公告)日：1976-08-17
申请号：US561945
申请日：1975-03-25
申请人： Seisuke Yamanaka , Yasuo Kanou , Tadayoshi Mifune , Satoshi Shimada
发明人： Seisuke Yamanaka , Yasuo Kanou , Tadayoshi Mifune , Satoshi Shimada
IPC分类号： H04N5/335 , H04N5/341 , H04N5/349 , H04N5/351 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/378 , H04N9/04 , H04N9/07
CPC分类号： H04N3/1593 , H04N9/045
摘要： A solid-state video camera employing a plurality of image sensing means in the form of charge coupled device chips which are arranged in such a manner that the video image cast on respective chips are displaced by distance equal to .tau.H/N where .tau..sub.H is the reciprocal of the image sampling frequency, also referred to as the alignment pitch of the picture elements in the horizontal direction and N is the number of charge coupled chips. After converting the images into electrical signals, read-out timings of given picture elements of respective chips are shifted in time in accordance with the shift in distance between the images on the respective chips prior to mixing the output signals. In this way a video output signal having a wide-band width is obtained. In addition, color video information is possible by the use of color filters which may be disposed in front of the respective charge coupled chips.
摘要翻译：一种采用电荷耦合器件芯片形式的多个图像感测装置的固态摄像机，其被布置成使得在相应芯片上投射的视频图像被移位等于tau H / N的距离，其中tau H是图像采样频率的倒数也称为水平方向上的像素的对准间距，N是电荷耦合芯片的数量。在将图像转换成电信号之后，根据在混合输出信号之前在各个芯片上的图像之间的距离的偏移，在时间上偏移各个芯片的给定图像元素的读出定时。以这种方式获得具有宽带宽的视频输出信号。此外，通过使用可以设置在各个电荷耦合芯片前面的滤色器，彩色视频信息是可能的。

3. 发明授权

US4012587A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4012587A
公开(公告)日：1977-03-15
申请号：US652116
申请日：1976-01-26
申请人： Shigeyuki Ochi , Seisuke Yamanaka , Yasuo Kanou
发明人： Shigeyuki Ochi , Seisuke Yamanaka , Yasuo Kanou
IPC分类号： C07C17/32 , H01L27/148 , H01L29/423 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/3728 , H04N9/04 , H04N3/16
CPC分类号： H04N9/045 , C07C17/32 , H01L27/14831 , H01L29/42396 , H04N3/1537 , H04N3/1593
摘要： In a solid state image sensor of the type which employs an inter-line transfer charge-coupled imaging device, the electrodes of the vertical shift registers are enlarged to extend to places which lie between image pick-up portions aligned in the vertical direction of the device. Each of the image pick-up portions comprises an image sensing area and a transfer gate. Preferably, every other image pick-up portion of a conventional CCD imaging device is removed to provide spacing between the image pick-up portions relative to the vertical direction.
摘要翻译：在使用线间传输电荷耦合成像装置的类型的固态图像传感器中，垂直移位寄存器的电极被放大以延伸到位于沿着垂直方向的垂直方向上排列的图像拾取部分之间的位置设备。每个图像拾取部分包括图像感测区域和传送门。优选地，除去常规CCD成像装置的每个其它图像拾取部分以提供图像拾取部分之间相对于垂直方向的间隔。

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