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1. 发明授权

US5630904A Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent 失效
标题翻译：用于从半导体衬底去除干蚀刻和光致抗蚀剂残留物的剥离和清洁剂，以及使用剥离和清洁剂形成线图案的方法
公开(公告)号：US5630904A
公开(公告)日：1997-05-20
申请号：US410726
申请日：1995-03-27
申请人： Tetsuo Aoyama , Rieko Nakano , Akira Ishihama , Koichiro Adachi
发明人： Tetsuo Aoyama , Rieko Nakano , Akira Ishihama , Koichiro Adachi
IPC分类号： G03F7/42 , H01L21/02 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/3213 , C09K13/00
CPC分类号： H01L21/02071 , G03F7/422 , G03F7/425 , H01L21/02063 , H01L21/32138 , Y10S438/963
摘要： Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.
摘要翻译：用于去除干蚀刻光刻胶残渣的剥离和清洁剂，以及使用剥离和清洁剂形成铝基线图案的方法。剥离剂和清洁剂含有（a）5-50重量％的由式[R1] m [COONHp（R2）q] n表示的有机碳铵铵盐或胺羧酸盐，其中R 1是氢，或具有1至18个碳原子的烷基或芳基; R2是氢或具有1至4个碳原子的烷基; m和n独立地为1至4的整数，p为1至4的整数，q为1至3的整数，p + q = 4和（b）0.5至15重量％的氟复合。本发明的方法有利地应用于用剥离和清洁剂处理干蚀刻的半导体衬底。半导体衬底包括其上具有含有铝的导电层的半导体晶片。通过图案化的光致抗蚀剂掩模对导电层进行干蚀刻，以形成具有蚀刻侧壁的布线体。干蚀刻在侧壁上形成侧壁保护膜。根据本发明的方法，侧壁保护膜和其它抗蚀剂残留物完全释放而不会腐蚀布线体。

2. 发明授权

US07015025B2 Process for producing viral RNA polymerase 失效
标题翻译：生产病毒RNA聚合酶的方法
公开(公告)号：US07015025B2
公开(公告)日：2006-03-21
申请号：US10399478
申请日：2001-09-27
申请人： Ayae Honda , Akira Ishihama
发明人： Ayae Honda , Akira Ishihama
IPC分类号： C12N7/04
CPC分类号： C12N9/127
摘要： This invention relates to a method for producing virus RNA polymerases of RNA viruses, more specifically, virus RNA polymerases of RNA viruses free of virus genomic RNA.The methods described in this invention includes the procedures for preparation of cDNAs for the genes for the component proteins of RNA polymerase of an RNA virus, incorporation of the cDNA into baculovirus genome to construct recombinant virus, and the infection of insect cells with the recombinant virus to express RNA polymerase. In this method, it is recommended that all species of the recombinant viruses, each of which is designed for expressing each of the above-mentioned component protein genes of RNA polymerase, are coinfected into insect cells. Thus, cDNA is prepared for each of the component proteins of RNA polymerase and incorporated into baculovirus genome to construct recombinant virus for independently expressing the corresponding protein. In addition, the RNA viruses described above include influenza virus especially. In this method, RNA polymerase may be tagged to facilitate the subsequent purification. Furthermore, the tagged RNA polymerase described above may be purified using an adsorbent to trap the RNA polymerase at the tag. Another subject matter of this invention is to artificially prepare a complex of the component proteins of RNA polymerase of an RNA virus, or, in other words, to prepare RNA polymerase free from RNA virus genomic RNA. The RNA viruses described here include influenza virus, and the component proteins of RNA polymerase include PA, PB1 and PB2.
摘要翻译：本发明涉及一种用于生产RNA病毒的病毒RNA聚合酶的方法，更具体地说，涉及不含病毒基因组RNA的RNA病毒的病毒RNA聚合酶。本发明描述的方法包括制备用于RNA病毒的RNA聚合酶的组分蛋白的基因的cDNA的方法，将cDNA并入杆状病毒基因组中构建重组病毒，以及用重组病毒感染昆虫细胞以表达RNA聚合酶。在该方法中，推荐将所有种类的重组病毒（其各自设计用于表达RNA聚合酶的上述成分蛋白质基因的每一种）共同感染到昆虫细胞中。因此，为每种RNA聚合酶的组分蛋白制备cDNA，并将其并入杆状病毒基因组中以构建用于独立表达相应蛋白质的重组病毒。此外，上述RNA病毒特别包括流感病毒。在该方法中，RNA聚合酶可被标记以促进随后的纯化。此外，可以使用吸附剂来纯化上述标记的RNA聚合酶，以将RNA聚合酶捕获在标签上。本发明的另一主题是人造制备RNA病毒的RNA聚合酶的组分蛋白质的复合物，或换句话说，制备不含RNA病毒基因组RNA的RNA聚合酶。这里描述的RNA病毒包括流感病毒，RNA聚合酶的组分蛋白包括PA，PB1和PB2。

3. 发明申请

US20060211269A1 Semiconductor device and its fabrication method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060211269A1
公开(公告)日：2006-09-21
申请号：US11376089
申请日：2006-03-16
申请人： Toshihisa Goto , Akira Ishihama , Osamu Yamazaki
发明人： Toshihisa Goto , Akira Ishihama , Osamu Yamazaki
IPC分类号： H01L21/31 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76898 , H01L21/76888
摘要： A fabrication method of a semiconductor device comprises the steps of forming a metal thin film Whose oxide is insulative on sidewall of a hole formed in a semiconductor substrate and forming an insulating metal oxide film by oxidizing the metal thin film.
摘要翻译：半导体器件的制造方法包括以下步骤：形成金属薄膜，其中氧化物绝缘在形成于半导体衬底中的孔的侧壁上，并通过氧化金属薄膜形成绝缘金属氧化物膜。

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