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1. 发明授权

US08815635B2 Manufacturing method of photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US08815635B2
公开(公告)日：2014-08-26
申请号：US13285062
申请日：2011-10-31
申请人： Tetsuhiro Tanaka , Fumito Isaka
发明人： Tetsuhiro Tanaka , Fumito Isaka
IPC分类号： H01L21/00 , H01L31/076
CPC分类号： H01L31/076 , H01L31/0747 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.
摘要翻译：光电转换装置具有包括与单晶硅衬底接触的第一非晶硅层和第二非晶硅层以及具有一种导电型的第一微晶硅层和具有导电性的第二微晶硅层的结构类型与分别与第一和第二非晶硅层接触的一种导电类型相反。使用适合高压成膜条件的等离子体CVD装置形成第一和第二微晶硅层。

2. 发明申请

US20120115273A1 MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20120115273A1
公开(公告)日：2012-05-10
申请号：US13285062
申请日：2011-10-31
申请人： Tetsuhiro TANAKA , Fumito Isaka
发明人： Tetsuhiro TANAKA , Fumito Isaka
IPC分类号： H01L31/18
CPC分类号： H01L31/076 , H01L31/0747 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.
摘要翻译：光电转换装置具有包括与单晶硅衬底接触的第一非晶硅层和第二非晶硅层以及具有一种导电型的第一微晶硅层和具有导电性的第二微晶硅层的结构类型与分别与第一和第二非晶硅层接触的一种导电类型相反。使用适合高压成膜条件的等离子体CVD装置形成第一和第二微晶硅层。

3. 发明授权

US09093601B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09093601B2
公开(公告)日：2015-07-28
申请号：US13398877
申请日：2012-02-17
申请人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
发明人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/00 , H01L31/18 , H01L31/074 , H01L31/075 , H01L31/0224
CPC分类号： H01L31/1868 , H01L31/022466 , H01L31/074 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.
摘要翻译：目的在于提供一种在窗口层中几乎没有光吸收损失并具有高转换效率的光电转换装置。形成包括具有n型导电性的晶体硅衬底和在一对电极之间具有p型导电性的透光半导体层的光电转换装置。在光电转换装置中，在结晶硅衬底和透光半导体层之间形成p-n结，透光半导体层用作窗口层。透光半导体层包括有机化合物和无机化合物。作为有机化合物和无机化合物，分别使用具有高空穴传输性的材料和具有电子接受性的过渡金属氧化物。

4. 发明授权

US07767547B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07767547B2
公开(公告)日：2010-08-03
申请号：US12360419
申请日：2009-01-27
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

5. 发明申请

US20090117716A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：制造半导体器件的方法和半导体器件和电子器件
公开(公告)号：US20090117716A1
公开(公告)日：2009-05-07
申请号：US12259241
申请日：2008-10-27
申请人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
发明人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
IPC分类号： H01L21/62
CPC分类号： H01L21/76254
摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.
摘要翻译：为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。因此，可以提供高性能半导体器件而不进行机械抛光。此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。因此，可以大大提高半导体器件的性能。此外，可以提供优良的电子装置。

6. 发明授权

US09437758B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09437758B2
公开(公告)日：2016-09-06
申请号：US13398872
申请日：2012-02-17
申请人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
发明人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/00 , H01L31/0236 , H01L31/028 , H01L31/068 , H01L31/056
CPC分类号： H01L31/02363 , H01L31/028 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.
摘要翻译：提供了一种在晶体硅衬底中的光吸收区域中进行光电转换的光电转换装置。在光电转换装置中，在背面电极和结晶硅基板之间设置有具有高的硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜。透光性导电膜包括有机化合物和无机化合物。有机化合物包括4-苯基-4' - （9-苯基芴-9-基）三苯胺。无机化合物包括属于周期表第4至8族中任何一种的金属的氧化物。

7. 发明授权

US08981379B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08981379B2
公开(公告)日：2015-03-17
申请号：US13239853
申请日：2011-09-22
申请人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
发明人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
IPC分类号： H01L29/04 , H01L21/20 , H01L27/12 , H01L29/786
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来，用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

8. 发明授权

US08772128B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772128B2
公开(公告)日：2014-07-08
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
发明人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

9. 发明授权

US08349702B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08349702B2
公开(公告)日：2013-01-08
申请号：US12426305
申请日：2009-04-20
申请人： Sho Kato , Satoshi Toriumi , Fumito Isaka
发明人： Sho Kato , Satoshi Toriumi , Fumito Isaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02532 , H01L21/0262 , H01L21/02667 , H01L21/02686 , H01L21/76254
摘要： A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.
摘要翻译：通过适合于批量生产的方法提供半导体衬底。此外，提供了具有优异特性的具有有效利用资源的半导体衬底。单晶半导体衬底被照射以在单晶半导体衬底中形成受损区域; 在单晶半导体衬底上形成绝缘层; 绝缘层和支撑基板彼此接合; 通过在损伤区域部分分离单晶半导体衬底，在支撑衬底上形成第一单晶半导体层; 在所述第一单晶半导体层上形成第一半导体层; 在与第一半导体层的形成不同的条件下，在第一半导体层上形成第二半导体层; 通过提高第一和第二半导体层的结晶度来形成第二单晶半导体层。

10. 发明申请

US20120086005A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20120086005A1
公开(公告)日：2012-04-12
申请号：US13252299
申请日：2011-10-04
申请人： Yoshikazu HIURA , Fumito Isaka
发明人： Yoshikazu HIURA , Fumito Isaka
IPC分类号： H01L31/0376
CPC分类号： H01L31/1824 , H01L31/03685 , H01L31/075 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.
摘要翻译：一种包括单晶硅衬底的光电转换装置; 与单晶硅衬底的表面（受光面）接触的第一非晶硅层; 与第一非晶硅层接触的第一极性（p型）杂质扩散层; 与所述单晶硅衬底的背面接触的第二非晶硅层; 以及与第二非晶硅层接触的第二极性（n型）杂质扩散层，其中第一和第二极性杂质扩散层是在反应室中的压力被调节到的沉积条件下形成的微晶硅层大于或等于450Pa并且小于或等于10000Pa。

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