会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Manufacturing method of SOI substrate
    • SOI衬底的制造方法
    • US07767547B2
    • 2010-08-03
    • US12360419
    • 2009-01-27
    • Fumito IsakaSho KatoKosei NeiRyu KomatsuTatsuya MizoiAkihisa Shimomura
    • Fumito IsakaSho KatoKosei NeiRyu KomatsuTatsuya MizoiAkihisa Shimomura
    • H01L21/46
    • H01L21/76254
    • An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
    • 通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。
    • 5. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    • 制造半导体器件的方法和半导体器件和电子器件
    • US20090117716A1
    • 2009-05-07
    • US12259241
    • 2008-10-27
    • Akihisa SHIMOMURAJunpei MomoFumito Isaka
    • Akihisa SHIMOMURAJunpei MomoFumito Isaka
    • H01L21/62
    • H01L21/76254
    • To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.
    • 为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底,以提供不执行机械抛光的高性能半导体器件,并且提供使用该半导体器件的电子器件 通过激光束照射改善了半导体层的平坦度,减小了半导体层的缺陷。 因此,可以提供高性能半导体器件而不进行机械抛光。 此外,使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。 具体地,代替在激光束的边缘部分照射的区域中的半导体层,将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。 因此,可以大大提高半导体器件的性能。 此外,可以提供优良的电子装置。
    • 9. 发明授权
    • Method for manufacturing semiconductor substrate
    • 半导体衬底的制造方法
    • US08349702B2
    • 2013-01-08
    • US12426305
    • 2009-04-20
    • Sho KatoSatoshi ToriumiFumito Isaka
    • Sho KatoSatoshi ToriumiFumito Isaka
    • H01L21/30H01L21/46
    • H01L21/02532H01L21/0262H01L21/02667H01L21/02686H01L21/76254
    • A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.
    • 通过适合于批量生产的方法提供半导体衬底。 此外,提供了具有优异特性的具有有效利用资源的半导体衬底。 单晶半导体衬底被照射以在单晶半导体衬底中形成受损区域; 在单晶半导体衬底上形成绝缘层; 绝缘层和支撑基板彼此接合; 通过在损伤区域部分分离单晶半导体衬底,在支撑衬底上形成第一单晶半导体层; 在所述第一单晶半导体层上形成第一半导体层; 在与第一半导体层的形成不同的条件下,在第一半导体层上形成第二半导体层; 通过提高第一和第二半导体层的结晶度来形成第二单晶半导体层。