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1. 发明授权

US4081292A Method of manufacturing a semi-insulating silicon layer 失效
标题翻译：制造半绝缘硅层的方法
公开(公告)号：US4081292A
公开(公告)日：1978-03-28
申请号：US678417
申请日：1976-04-19
申请人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Motoaki Abe
发明人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Motoaki Abe
IPC分类号： H01L29/73 , H01L21/00 , H01L21/265 , H01L21/329 , H01L21/331 , H01L21/76 , H01L23/29 , H01L29/78 , H01L21/26
CPC分类号： H01L21/00 , H01L23/291 , H01L2924/0002
摘要： Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.
摘要翻译：将硅离子注入到硅衬底上的二氧化硅层中，使得二氧化层转化为具有改善的钝化性质的半绝缘层。

2. 发明授权

US4084986A Method of manufacturing a semi-insulating silicon layer 失效
标题翻译：制造半绝缘硅层的方法
公开(公告)号：US4084986A
公开(公告)日：1978-04-18
申请号：US678061
申请日：1976-04-19
申请人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Hisao Hayashi
发明人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Hisao Hayashi
IPC分类号： H01L27/04 , H01L21/00 , H01L21/265 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/329 , H01L21/331 , H01L21/76 , H01L21/822 , H01L23/29 , H01L23/31 , H01L29/73 , H01L29/78 , H01L29/8605 , H01L21/26
CPC分类号： H01L29/8605 , H01L21/00 , H01L21/26506 , H01L21/314 , H01L21/31654 , H01L21/3185 , H01L23/291 , H01L23/3157 , H01L2924/0002 , Y10S148/061 , Y10S148/085 , Y10S148/112 , Y10S148/114 , Y10S438/958
摘要： An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.
摘要翻译：将氧或氮离子束注入到半导体衬底上的多晶硅或非晶硅层或单晶器件主体或层中，至足以转换多晶硅层，非晶层或单晶器件本体或层变成具有107至1011欧姆 - 厘米电阻率的半绝缘层，其具有改善的钝化性能。

3. 发明授权

US3975760A Solid state camera 失效
标题翻译：固态摄像头
公开(公告)号：US3975760A
公开(公告)日：1976-08-17
申请号：US561945
申请日：1975-03-25
申请人： Seisuke Yamanaka , Yasuo Kanou , Tadayoshi Mifune , Satoshi Shimada
发明人： Seisuke Yamanaka , Yasuo Kanou , Tadayoshi Mifune , Satoshi Shimada
IPC分类号： H04N5/335 , H04N5/341 , H04N5/349 , H04N5/351 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/378 , H04N9/04 , H04N9/07
CPC分类号： H04N3/1593 , H04N9/045
摘要： A solid-state video camera employing a plurality of image sensing means in the form of charge coupled device chips which are arranged in such a manner that the video image cast on respective chips are displaced by distance equal to .tau.H/N where .tau..sub.H is the reciprocal of the image sampling frequency, also referred to as the alignment pitch of the picture elements in the horizontal direction and N is the number of charge coupled chips. After converting the images into electrical signals, read-out timings of given picture elements of respective chips are shifted in time in accordance with the shift in distance between the images on the respective chips prior to mixing the output signals. In this way a video output signal having a wide-band width is obtained. In addition, color video information is possible by the use of color filters which may be disposed in front of the respective charge coupled chips.
摘要翻译：一种采用电荷耦合器件芯片形式的多个图像感测装置的固态摄像机，其被布置成使得在相应芯片上投射的视频图像被移位等于tau H / N的距离，其中tau H是图像采样频率的倒数也称为水平方向上的像素的对准间距，N是电荷耦合芯片的数量。在将图像转换成电信号之后，根据在混合输出信号之前在各个芯片上的图像之间的距离的偏移，在时间上偏移各个芯片的给定图像元素的读出定时。以这种方式获得具有宽带宽的视频输出信号。此外，通过使用可以设置在各个电荷耦合芯片前面的滤色器，彩色视频信息是可能的。

4. 发明授权

US4194213A Semiconductor image sensor having CCD shift register 失效
标题翻译：具有CCD移位寄存器的半导体图像传感器
公开(公告)号：US4194213A
公开(公告)日：1980-03-18
申请号：US825706
申请日：1977-08-18
申请人： Yasuo Kano , Shunsuke Furukawa , Tadayoshi Mifune
发明人： Yasuo Kano , Shunsuke Furukawa , Tadayoshi Mifune
IPC分类号： H01L27/148 , H01L29/423 , H01L29/78 , G11C19/28 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14887 , H01L27/14831 , H01L29/42396
摘要： In a semiconductor image sensor composed of a plurality of charge-coupled photo-sensor elements, each of said photo-sensor elements comprises a substrate of one conductivity type with an insulating layer thereon, a first electrode on the insulating layer having a first electrode portion spaced from the substrate by a thickness of said insulating layer for defining, in combination with a potential applied to the first electrode, a first region in the substrate which is a potential well for minority charge carriers therein, a second electrode in the insulating layer having second and third electrode portions which are respectively adjacent to and remote from the first electrode, and which are spaced from the substrate by different thicknesses of the insulating layer for defining, in combination with a potential applied to the second electrode, adjacent second and third regions in the substrate which are respectively a potential barrier to the potential well in the first region and a potential well for the minority charge carriers relative to the potential barrier of the second region, and a third electrode in the insulating layer spaced from the substrate and second electrode by the insulating layer and having a fourth electrode portion overlapping the third electrode portion, with at least one of the second and third electrodes having a cutout portion cooperating with an adjacent portion of the other of such electrodes to define an opening above the aforementioned first region which is a potential well.
摘要翻译：在由多个电荷耦合光电传感器元件组成的半导体图像传感器中，每个所述光传感器元件包括一个导电类型的衬底，其上具有绝缘层，绝缘层上的第一电极具有第一电极部分与衬底隔开所述绝缘层的厚度，用于与施加到第一电极的电位组合地限定衬底中的第一区域，该第一区域是其中的少数电荷载流子的势阱，绝缘层中的第二电极具有第二和第三电极部分，其分别与第一电极相邻并远离第一电极，并且与绝缘层的不同厚度与衬底间隔开，用于与施加到第二电极的相邻的第二和第三区域在基板中分别是第一区域中的势阱的潜在势垒和小池对于少数电荷载体相对于第二区域的势垒为小，并且绝缘层中的第三电极通过绝缘层与衬底和第二电极间隔开，并且具有与第三电极部分重叠的第四电极部分，第二和第三电极中的至少一个电极具有与这些电极中的另一个的相邻部分配合的切口部分，以限定位于上述第一区域上方的开口，该第一区域是势阱。

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