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1. 发明授权

US4001762A Thin film resistor 失效
标题翻译：薄膜电阻
公开(公告)号：US4001762A
公开(公告)日：1977-01-04
申请号：US582618
申请日：1975-06-02
申请人： Teruaki Aoki , Hisayoshi Yamoto , Masanori Okayama , Yoshimi Hirata , Shuichi Sato , Takaaki Yamada
发明人： Teruaki Aoki , Hisayoshi Yamoto , Masanori Okayama , Yoshimi Hirata , Shuichi Sato , Takaaki Yamada
IPC分类号： C01B33/02 , H01B1/04 , H01C7/00 , H01L21/02 , H01L21/208 , H01L21/822 , H01L27/04 , H01L29/00 , H01C1/012
CPC分类号： H01L28/20 , H01C7/006 , H01L29/00 , Y10S438/934
摘要： A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.

2. 发明授权

US4176372A Semiconductor device having oxygen doped polycrystalline passivation layer 失效
标题翻译：具有氧掺杂多晶钝化层的半导体器件
公开(公告)号：US4176372A
公开(公告)日：1979-11-27
申请号：US857284
申请日：1977-12-05
申请人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawana
发明人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawana
IPC分类号： H01L21/314 , H01L23/29 , H01L27/06 , H01L27/092 , H01L29/34
CPC分类号： H01L27/0641 , H01L21/314 , H01L23/298 , H01L27/0927 , H01L2924/0002 , H01L2924/13091 , Y10S257/905
摘要： A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.
摘要翻译：在单晶半导体衬底上形成多晶层作为钝化层，所述多晶层含有2至45原子％范围内的氧。所述基板的表面与多晶硅层之间的表面状态的密度在禁带的中间部分小于1010 / cm2×eV，多晶层中固定电荷的界面密度小于1010 / cm 2。

3. 发明授权

US4014037A Semiconductor device 失效
公开(公告)号：US4014037A
公开(公告)日：1977-03-22
申请号：US561532
申请日：1975-03-24
申请人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawada
发明人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawada
IPC分类号： H01L29/73 , G02B6/12 , H01L21/283 , H01L21/314 , H01L21/331 , H01L21/76 , H01L27/04 , H01L29/78 , H01L29/861 , H01L29/34
CPC分类号： H01L21/314 , H01L2924/0002 , Y10S257/905
摘要： A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

4. 发明申请

US20070166457A1 Vaporizer, film forming apparatus including the same, method of vaporization and method of forming film 审中-公开
标题翻译：蒸发器，包括其的成膜装置，蒸发方法和形成膜的方法
公开(公告)号：US20070166457A1
公开(公告)日：2007-07-19
申请号：US10548202
申请日：2004-03-08
申请人： Hisayoshi Yamoto , Kazuya Akuto , Ken Nagaoka , Hitoshi Kobayashi , Masafumi Shoji , Mitsuru Fukugawa
发明人： Hisayoshi Yamoto , Kazuya Akuto , Ken Nagaoka , Hitoshi Kobayashi , Masafumi Shoji , Mitsuru Fukugawa
IPC分类号： C23C16/00
CPC分类号： C23C16/448
摘要： It is aimed at providing a vaporization apparatus and a vaporization method capable of keeping track of a progressive condition of clogging of the apparatus. It is also aimed at providing a vaporization apparatus and a vaporization method capable of eliminating clogging prior to occurrence of complete clogging, without disassembling the apparatus. It provides a vaporization apparatus for introducing a carrier gas from one end of a gas passage and for feeding, the carrier gas including a material solution, from the other end of the gas passage to a vaporization part to thereby vaporize the material solution, characterized in that a mass flow controller (MFC) is provided at the one end of the gas passage, and means for detecting a pressure within the gas passage is provided. The vaporization apparatus is characterized in that the same is provided with means for introducing a chemical solution capable of dissolving therein matters deposited or sticked to the inside of the gas passage, into the gas passage.
摘要翻译：其目的在于提供能够跟踪装置堵塞的进行状态的蒸发装置和蒸发方法。还旨在提供一种能够在没有完全堵塞的情况下消除堵塞而不拆卸设备的蒸发装置和蒸发方法。它提供了一种用于从气体通道的一端引入载气并用于将包括材料溶液的载气从气体通道的另一端引入蒸发部分从而汽化该材料溶液的蒸发装置，其特征在于，在气体通道的一端设置质量流量控制器（MFC），并且提供用于检测气体通道内的压力的装置。蒸发装置的特征在于，其具有用于将能够溶解在气体通道内部的物质中的化学溶液引入气体通道的装置。

5. 发明授权

US06653212B1 Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device 失效
标题翻译：用于薄膜沉积的方法和装置，以及制造薄膜半导体器件的方法
公开(公告)号：US06653212B1
公开(公告)日：2003-11-25
申请号：US09719994
申请日：2001-04-09
申请人： Hideo Yamanaka , Hisayoshi Yamoto
发明人： Hideo Yamanaka , Hisayoshi Yamoto
IPC分类号： H01L2120
CPC分类号： C23C16/0236 , C23C16/44 , Y10S438/903
摘要： A thin film forming apparatus S having a vacuum chamber 1, a substrate 10, a thermal catalyst 5, and a heating means 5a for heating this thermal catalyst 5, wherein a gas introduction system 3 for feeding the gas is connected in the vacuum chamber 1, the gas is fed from this gas introduction system 3 to the vacuum chamber 1, and thin films are formed on the surface of the substrate 10 by utilizing a thermal decomposition reaction or catalytic reaction by the thermal catalyst 5, the gas introduction system 3 is for introducing a carrier gas containing hydrogen and a material gas for forming the thin film on the substrate 10, and the carrier gas is constantly fed into the vacuum chamber 1 at least during the formation of the thin film.
摘要翻译：具有真空室1，基板10，热催化剂5和用于加热该热催化剂5的加热装置5a的薄膜形成装置S，其中用于供给气体的气体引入系统3连接在真空室1中气体从该气体导入系统3供给至真空室1，利用热催化剂5的热分解反应或催化反应，在基板10的表面形成薄膜，气体导入系统3为用于在衬底10上引入含有氢的载气和用于形成薄膜的材料气体，并且至少在形成薄膜期间将载气恒定地供给到真空室1中。

6. 发明授权

US06399429B1 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device 失效
标题翻译：形成单晶硅层的方法，半导体器件的制造方法以及半导体器件
公开(公告)号：US06399429B1
公开(公告)日：2002-06-04
申请号：US09486619
申请日：2000-02-29
申请人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
发明人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/76262 , H01L21/86 , H01L27/1214 , H01L29/66757 , H01L29/6678
摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
摘要翻译：将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。因此，硅层在低温下均匀地外延生长。

7. 发明授权

US5107914A Driving mechanism for a multi-piece rim 失效
标题翻译：多件式边缘的驱动机构
公开(公告)号：US5107914A
公开(公告)日：1992-04-28
申请号：US244862
申请日：1988-09-15
申请人： Hisayoshi Yamoto , Masakazu Ohi
发明人： Hisayoshi Yamoto , Masakazu Ohi
IPC分类号： B60B25/04
CPC分类号： B60B25/04
摘要： A driving mechanism having a driver-loose key provided between a rim base and a bead seat band mounted about the rim base of a multi-piece rim which has the rim base, the bead seat band, a pair of side rings and a lock ring. The driver-loose key is cross-shaped with the two portions thereof which are adapted to be inserted into a groove extending in the circumferential direction of the rim base between the rim base and the bead seat band being arc-shaped so as to have substantially the same curvature as that of the groove. With this structure the slippage of the bead seat band on the rim base can be minimized and the durability of the mechanism can be increased.
摘要翻译：具有驱动器松开键的驱动机构，其设置在轮辋基座和安装在具有轮辋基座的多件式轮辋的边缘基座周围的轮辋基座和胎圈座圈之间，胎圈座带，一对侧环和锁定环。驱动器松开键是十字形的，其两个部分适于插入沿轮缘底座的圆周方向延伸的凹槽中，所述凹槽在轮辋底座和胎圈座圈之间呈弧形，从而具有基本上与凹槽相同的曲率。通过这种结构，可以使轮辋基座上的胎圈座带的滑动最小化，并且可以提高机构的耐久性。

8. 发明申请

US20080216872A1 Carburetor, Method of Vaporizing Material Solution, and Method of Washing Carburetor 审中-公开
标题翻译：化油器，蒸发材料溶液的方法，以及清洗化油器的方法
公开(公告)号：US20080216872A1
公开(公告)日：2008-09-11
申请号：US10546508
申请日：2004-02-18
申请人： Hisayoshi Yamoto , Ryoichi Sakai , Masafumi Shoji , Kazuya Akuto , Ken Nagaoka , Hiroshi Watanuki
发明人： Hisayoshi Yamoto , Ryoichi Sakai , Masafumi Shoji , Kazuya Akuto , Ken Nagaoka , Hiroshi Watanuki
IPC分类号： C23C16/448 , B08B3/08 , B08B5/00 , B05B15/02
CPC分类号： C23C16/4486
摘要： There is obtained an MOCVD oriented vaporizer which eliminates a phenomenon that thin-film materials are adhered to a portion of the vaporizer near and around a spout thereof. A carrier gas/small amount oxidizing gas supply part supplies a carrier gas, which is supplied through an internally formed gas passage and which contains a material solution, to a vaporization part; a bubble prevention/material solution supply part supplies a material for preventing generation of bubbles of the carrier gas containing the material solution, and the material solution, into the carrier gas; a solvent vaporization restricting/cooling system restricts vaporization of a solvent; and a swirl flow preventing gas supply part supplies a gas for preventing occurrence of swirl flows near a gas outlet of the vaporization part. An atomizing part causes the carrier gas, which contains the material solution and which is ejected from the vaporizer, to be formed into a finely atomized state; and a complete vaporization oriented high performance vaporization tube completely vaporizes the carrier gas ejected from the vaporizer and containing the material solution. This enables long-term usage without clogging and the like, and enables a stable material supply to a reaction part.
摘要翻译：获得了一种MOCVD取向的蒸发器，其消除了薄膜材料附着在蒸发器附近和其周围的一部分附近的现象。载气/少量氧化气体供给部将通过内部形成的气体流路供给并含有原料溶液的载气供给到汽化部; 气泡防止/物质溶液供给部件提供用于防止将含有材料溶液和材料溶液的载气的气泡产生到载气中的材料; 溶剂蒸发限制/冷却系统限制溶剂的蒸发; 并且防止涡流阻止气体供应部分供应用于防止在汽化部分的气体出口附近发生涡流的气体。雾化部分使包含材料溶液并从蒸发器喷出的载气形成微细的状态; 并且完全蒸发取向的高性能蒸发管将从蒸发器喷出的载气完全蒸发并包含材料溶液。这使得能够长期使用而不堵塞等，并且能够稳定地供给反应部件。

9. 发明申请

US20060278166A1 Vaporizer, various devices using the same, and vaporizing method 审中-公开
标题翻译：蒸发器，使用各种装置，蒸发方法
公开(公告)号：US20060278166A1
公开(公告)日：2006-12-14
申请号：US10508428
申请日：2003-03-18
申请人： Hisayoshi Yamoto , Mitsuru Fukagawa , Masayuki Toda
发明人： Hisayoshi Yamoto , Mitsuru Fukagawa , Masayuki Toda
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： There is provided a vaporizer that can be used for a long period of time without being clogged and can supply a raw material stably to a reaction section. The evaporator includes a dispersion section 8 having a gas passage 2 formed in a dispersion section body 1, a gas introduction port 4 for introducing a pressurized carrier gas 3 into the gas passage 2, means 6 for supplying a raw material solution 5 to the gas carrier passing through the gas passage 2, a gas outlet 7 for sending the carrier gas containing the dispersed raw material solution 5 to a vaporization section 22, and means 18 for cooling the gas passage 2; and the vaporization section 22 for heating and vaporizing the carrier gas in which the raw material solution is dispersed, having a vaporization tube 20 connected to the reaction section of an apparatus and the gas outlet 7 of the dispersion section 8, and a heater 21 for heating the vaporization tube 20, and is characterized in that the pressure of the reaction section is set lower than the pressure of the vaporization tube.
摘要翻译：提供一种长时间使用而不堵塞的蒸发器，能够将原料稳定地供给到反应部。蒸发器包括：分散部分8，其具有形成在分散部分主体1中的气体通道2;气体引入口4，用于将加压载气3引入气体通道2中;装置6，用于将原料溶液5供应到气体穿过气体通道2的载体，用于将含有分散的原料溶液5的载气送到蒸发部分22的气体出口7和用于冷却气体通道2的装置18; 以及用于加热和蒸发其中分散有原料溶液的载气的蒸发部分22，其具有连接到装置的反应部分的蒸发管20和分散部分8的气体出口7和用于加热蒸发管20，其特征在于反应段的压力设定为低于蒸发管的压力。

10. 发明授权

US06355952B1 Capacitor having ferroelectric film and multiple layers of insulating and protective films for nonvolatile memory cell 失效
标题翻译：具有铁电薄膜的电容器和用于非易失性存储单元的多层绝缘和保护膜
公开(公告)号：US06355952B1
公开(公告)日：2002-03-12
申请号：US08722640
申请日：1996-09-27
申请人： Hisayoshi Yamoto , Akihiko Ochiai
发明人： Hisayoshi Yamoto , Akihiko Ochiai
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A capacitor in a ferroelectric nonvolatile memory (FERAM) comprising a lower electrode formed on a semiconductor substrate; a ferroelectric thin film formed on the lower electrode; an upper electrode formed on the ferroelectric thin film; a first protective layer consisting of one or more layers formed between the semiconductor substrate and the lower electrode, and composed of a material selected from those of Group IVa transition metal, Group Va transition metal, Group IVa transition metal nitride, Group Va transition metal nitride, silicon nitride, nickel and palladium; and a second protective layer consisting of one or more layers formed on the upper electrode, and composed of a material selected from those of Group IVa transition metal, Group Va transition metal, Group IVa transition metal nitride, Group Va transition metal nitride, nickel and palladium. Since the ferroelectric capacitor is enclosed with composite films of such materials, it becomes possible to prevent diffusion of hydrogen and intrusion of water content therein to consequently avert deterioration of the characteristics.
摘要翻译：一种铁电非易失性存储器（FERAM）中的电容器，包括形成在半导体衬底上的下电极; 形成在下电极上的铁电薄膜; 形成在铁电薄膜上的上电极; 由形成在半导体衬底和下电极之间的一层或多层组成的第一保护层，并且由选自第Ⅳa族过渡金属，第Va族过渡金属，第Ⅳa族过渡金属氮化物，第Va族过渡金属氮化物，氮化硅，镍和钯; 以及由形成在上电极上的一层或多层构成的第二保护层，并且由选自第Ⅳa族过渡金属，第Va族过渡金属，Ⅳa族过渡金属氮化物，Ⅴa族过渡金属氮化物，镍和钯。由于铁电电容器被这种材料的复合膜包围，因此可以防止氢的扩散和水分含量的侵入，从而避免特性劣化。

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