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1. 发明授权

US4176372A Semiconductor device having oxygen doped polycrystalline passivation layer 失效
标题翻译：具有氧掺杂多晶钝化层的半导体器件
公开(公告)号：US4176372A
公开(公告)日：1979-11-27
申请号：US857284
申请日：1977-12-05
申请人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawana
发明人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawana
IPC分类号： H01L21/314 , H01L23/29 , H01L27/06 , H01L27/092 , H01L29/34
CPC分类号： H01L27/0641 , H01L21/314 , H01L23/298 , H01L27/0927 , H01L2924/0002 , H01L2924/13091 , Y10S257/905
摘要： A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.
摘要翻译：在单晶半导体衬底上形成多晶层作为钝化层，所述多晶层含有2至45原子％范围内的氧。所述基板的表面与多晶硅层之间的表面状态的密度在禁带的中间部分小于1010 / cm2×eV，多晶层中固定电荷的界面密度小于1010 / cm 2。

2. 发明授权

US4014037A Semiconductor device 失效
公开(公告)号：US4014037A
公开(公告)日：1977-03-22
申请号：US561532
申请日：1975-03-24
申请人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawada
发明人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hisayoshi Yamoto , Yoshiyuki Kawada
IPC分类号： H01L29/73 , G02B6/12 , H01L21/283 , H01L21/314 , H01L21/331 , H01L21/76 , H01L27/04 , H01L29/78 , H01L29/861 , H01L29/34
CPC分类号： H01L21/314 , H01L2924/0002 , Y10S257/905
摘要： A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

3. 发明授权

US4302763A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4302763A
公开(公告)日：1981-11-24
申请号：US65262
申请日：1979-08-09
申请人： Norikazu Ohuchi , Hisayoshi Yamoto , Hisao Hayashi , Takeshi Matsushita
发明人： Norikazu Ohuchi , Hisayoshi Yamoto , Hisao Hayashi , Takeshi Matsushita
IPC分类号： H01L21/205 , H01L29/04 , H01L29/06 , H01L29/08 , H01L29/72 , H01L29/737 , H01L29/74 , H01L31/0368 , H01L31/0745 , H01L33/00 , H01L29/161
CPC分类号： H01L33/002 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L29/0611 , H01L29/0638 , H01L29/0839 , H01L29/72 , H01L29/7375 , H01L29/7408 , H01L31/03682 , H01L31/0745 , Y02E10/546
摘要： A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.
摘要翻译：半导体器件包括半导体衬底，在衬底中的第一导电类型的第一区域，在衬底中并与第一区域相邻的第二导电类型的第二区域，与第二区域相邻的第一导电类型的第三区域具有由与衬底相同的元件和氧构成的衬底上的至少一部分，该部分的带隙能量大于第二区域的带隙能量，以及用于将第一区域中的多数载流子输送到第三区域的装置。

4. 发明授权

US4001762A Thin film resistor 失效
标题翻译：薄膜电阻
公开(公告)号：US4001762A
公开(公告)日：1977-01-04
申请号：US582618
申请日：1975-06-02
申请人： Teruaki Aoki , Hisayoshi Yamoto , Masanori Okayama , Yoshimi Hirata , Shuichi Sato , Takaaki Yamada
发明人： Teruaki Aoki , Hisayoshi Yamoto , Masanori Okayama , Yoshimi Hirata , Shuichi Sato , Takaaki Yamada
IPC分类号： C01B33/02 , H01B1/04 , H01C7/00 , H01L21/02 , H01L21/208 , H01L21/822 , H01L27/04 , H01L29/00 , H01C1/012
CPC分类号： H01L28/20 , H01C7/006 , H01L29/00 , Y10S438/934
摘要： A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.

5. 发明授权

US5162892A Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer 失效
标题翻译：具有多晶硅有源区和氢化钝化层的半导体器件
公开(公告)号：US5162892A
公开(公告)日：1992-11-10
申请号：US703057
申请日：1991-05-17
申请人： Hisao Hayashi , Hisayoshi Yamoto , Chiaki Sakai
发明人： Hisao Hayashi , Hisayoshi Yamoto , Chiaki Sakai
IPC分类号： H01L21/30 , H01L21/318 , H01L21/84 , H01L23/29 , H01L27/06 , H01L29/04 , H01L29/786
CPC分类号： H01L23/291 , H01L21/3003 , H01L21/3185 , H01L21/84 , H01L27/0688 , H01L29/04 , H01L29/78675 , H01L2924/0002 , H01L2924/13091
摘要： A thin film semiconductor device with a polycrystalline silicon film forming an active channel region, a source region and a drain region, is encapsulated in a passivation layer which also serves as a source of free hydrogen. Migration of hydrogen into the active region improves the effective carrier mobility, the threshold voltage and the gate voltage of the device by reducing carrier trap density thereof. The passivation layer is activated during annealing to drive hydrogen through porous or transmissive layers of the device to the active region. Effective mobilities of up to 100 cm.sup.2 /V sec can be achieved in the preferred construction. The semicondcutor device can be fabricated in the form of IC chips.
摘要翻译：具有形成有源沟道区，源极区和漏极区的多晶硅膜的薄膜半导体器件被封装在还用作游离氢源的钝化层中。通过降低其载流子阱密度，氢向有源区的迁移改善了器件的有效载流子迁移率，阈值电压和栅极电压。钝化层在退火过程中被激活，以将氢气通过器件的多孔或透射层驱动到有源区。在优选的结构中可达到高达100cm2 / V秒的有效迁移率。半切割器件可以以IC芯片的形式制造。

6. 发明申请

US20070166457A1 Vaporizer, film forming apparatus including the same, method of vaporization and method of forming film 审中-公开
标题翻译：蒸发器，包括其的成膜装置，蒸发方法和形成膜的方法
公开(公告)号：US20070166457A1
公开(公告)日：2007-07-19
申请号：US10548202
申请日：2004-03-08
申请人： Hisayoshi Yamoto , Kazuya Akuto , Ken Nagaoka , Hitoshi Kobayashi , Masafumi Shoji , Mitsuru Fukugawa
发明人： Hisayoshi Yamoto , Kazuya Akuto , Ken Nagaoka , Hitoshi Kobayashi , Masafumi Shoji , Mitsuru Fukugawa
IPC分类号： C23C16/00
CPC分类号： C23C16/448
摘要： It is aimed at providing a vaporization apparatus and a vaporization method capable of keeping track of a progressive condition of clogging of the apparatus. It is also aimed at providing a vaporization apparatus and a vaporization method capable of eliminating clogging prior to occurrence of complete clogging, without disassembling the apparatus. It provides a vaporization apparatus for introducing a carrier gas from one end of a gas passage and for feeding, the carrier gas including a material solution, from the other end of the gas passage to a vaporization part to thereby vaporize the material solution, characterized in that a mass flow controller (MFC) is provided at the one end of the gas passage, and means for detecting a pressure within the gas passage is provided. The vaporization apparatus is characterized in that the same is provided with means for introducing a chemical solution capable of dissolving therein matters deposited or sticked to the inside of the gas passage, into the gas passage.
摘要翻译：其目的在于提供能够跟踪装置堵塞的进行状态的蒸发装置和蒸发方法。还旨在提供一种能够在没有完全堵塞的情况下消除堵塞而不拆卸设备的蒸发装置和蒸发方法。它提供了一种用于从气体通道的一端引入载气并用于将包括材料溶液的载气从气体通道的另一端引入蒸发部分从而汽化该材料溶液的蒸发装置，其特征在于，在气体通道的一端设置质量流量控制器（MFC），并且提供用于检测气体通道内的压力的装置。蒸发装置的特征在于，其具有用于将能够溶解在气体通道内部的物质中的化学溶液引入气体通道的装置。

7. 发明授权

US06653212B1 Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device 失效
标题翻译：用于薄膜沉积的方法和装置，以及制造薄膜半导体器件的方法
公开(公告)号：US06653212B1
公开(公告)日：2003-11-25
申请号：US09719994
申请日：2001-04-09
申请人： Hideo Yamanaka , Hisayoshi Yamoto
发明人： Hideo Yamanaka , Hisayoshi Yamoto
IPC分类号： H01L2120
CPC分类号： C23C16/0236 , C23C16/44 , Y10S438/903
摘要： A thin film forming apparatus S having a vacuum chamber 1, a substrate 10, a thermal catalyst 5, and a heating means 5a for heating this thermal catalyst 5, wherein a gas introduction system 3 for feeding the gas is connected in the vacuum chamber 1, the gas is fed from this gas introduction system 3 to the vacuum chamber 1, and thin films are formed on the surface of the substrate 10 by utilizing a thermal decomposition reaction or catalytic reaction by the thermal catalyst 5, the gas introduction system 3 is for introducing a carrier gas containing hydrogen and a material gas for forming the thin film on the substrate 10, and the carrier gas is constantly fed into the vacuum chamber 1 at least during the formation of the thin film.
摘要翻译：具有真空室1，基板10，热催化剂5和用于加热该热催化剂5的加热装置5a的薄膜形成装置S，其中用于供给气体的气体引入系统3连接在真空室1中气体从该气体导入系统3供给至真空室1，利用热催化剂5的热分解反应或催化反应，在基板10的表面形成薄膜，气体导入系统3为用于在衬底10上引入含有氢的载气和用于形成薄膜的材料气体，并且至少在形成薄膜期间将载气恒定地供给到真空室1中。

8. 发明授权

US06399429B1 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device 失效
标题翻译：形成单晶硅层的方法，半导体器件的制造方法以及半导体器件
公开(公告)号：US06399429B1
公开(公告)日：2002-06-04
申请号：US09486619
申请日：2000-02-29
申请人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
发明人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/76262 , H01L21/86 , H01L27/1214 , H01L29/66757 , H01L29/6678
摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
摘要翻译：将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。因此，硅层在低温下均匀地外延生长。

9. 发明授权

US5107914A Driving mechanism for a multi-piece rim 失效
标题翻译：多件式边缘的驱动机构
公开(公告)号：US5107914A
公开(公告)日：1992-04-28
申请号：US244862
申请日：1988-09-15
申请人： Hisayoshi Yamoto , Masakazu Ohi
发明人： Hisayoshi Yamoto , Masakazu Ohi
IPC分类号： B60B25/04
CPC分类号： B60B25/04
摘要： A driving mechanism having a driver-loose key provided between a rim base and a bead seat band mounted about the rim base of a multi-piece rim which has the rim base, the bead seat band, a pair of side rings and a lock ring. The driver-loose key is cross-shaped with the two portions thereof which are adapted to be inserted into a groove extending in the circumferential direction of the rim base between the rim base and the bead seat band being arc-shaped so as to have substantially the same curvature as that of the groove. With this structure the slippage of the bead seat band on the rim base can be minimized and the durability of the mechanism can be increased.
摘要翻译：具有驱动器松开键的驱动机构，其设置在轮辋基座和安装在具有轮辋基座的多件式轮辋的边缘基座周围的轮辋基座和胎圈座圈之间，胎圈座带，一对侧环和锁定环。驱动器松开键是十字形的，其两个部分适于插入沿轮缘底座的圆周方向延伸的凹槽中，所述凹槽在轮辋底座和胎圈座圈之间呈弧形，从而具有基本上与凹槽相同的曲率。通过这种结构，可以使轮辋基座上的胎圈座带的滑动最小化，并且可以提高机构的耐久性。

10. 发明申请

US20080216872A1 Carburetor, Method of Vaporizing Material Solution, and Method of Washing Carburetor 审中-公开
标题翻译：化油器，蒸发材料溶液的方法，以及清洗化油器的方法
公开(公告)号：US20080216872A1
公开(公告)日：2008-09-11
申请号：US10546508
申请日：2004-02-18
申请人： Hisayoshi Yamoto , Ryoichi Sakai , Masafumi Shoji , Kazuya Akuto , Ken Nagaoka , Hiroshi Watanuki
发明人： Hisayoshi Yamoto , Ryoichi Sakai , Masafumi Shoji , Kazuya Akuto , Ken Nagaoka , Hiroshi Watanuki
IPC分类号： C23C16/448 , B08B3/08 , B08B5/00 , B05B15/02
CPC分类号： C23C16/4486
摘要： There is obtained an MOCVD oriented vaporizer which eliminates a phenomenon that thin-film materials are adhered to a portion of the vaporizer near and around a spout thereof. A carrier gas/small amount oxidizing gas supply part supplies a carrier gas, which is supplied through an internally formed gas passage and which contains a material solution, to a vaporization part; a bubble prevention/material solution supply part supplies a material for preventing generation of bubbles of the carrier gas containing the material solution, and the material solution, into the carrier gas; a solvent vaporization restricting/cooling system restricts vaporization of a solvent; and a swirl flow preventing gas supply part supplies a gas for preventing occurrence of swirl flows near a gas outlet of the vaporization part. An atomizing part causes the carrier gas, which contains the material solution and which is ejected from the vaporizer, to be formed into a finely atomized state; and a complete vaporization oriented high performance vaporization tube completely vaporizes the carrier gas ejected from the vaporizer and containing the material solution. This enables long-term usage without clogging and the like, and enables a stable material supply to a reaction part.
摘要翻译：获得了一种MOCVD取向的蒸发器，其消除了薄膜材料附着在蒸发器附近和其周围的一部分附近的现象。载气/少量氧化气体供给部将通过内部形成的气体流路供给并含有原料溶液的载气供给到汽化部; 气泡防止/物质溶液供给部件提供用于防止将含有材料溶液和材料溶液的载气的气泡产生到载气中的材料; 溶剂蒸发限制/冷却系统限制溶剂的蒸发; 并且防止涡流阻止气体供应部分供应用于防止在汽化部分的气体出口附近发生涡流的气体。雾化部分使包含材料溶液并从蒸发器喷出的载气形成微细的状态; 并且完全蒸发取向的高性能蒸发管将从蒸发器喷出的载气完全蒸发并包含材料溶液。这使得能够长期使用而不堵塞等，并且能够稳定地供给反应部件。

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