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    • 2. 发明授权
    • Methods and apparatus for processing insulating substrates
    • 用于处理绝缘基板的方法和装置
    • US06228429B1
    • 2001-05-08
    • US09495545
    • 2000-02-01
    • Terry BluckJames H. RogersJun XieEric C. Lawson
    • Terry BluckJames H. RogersJun XieEric C. Lawson
    • B05D140
    • C23C14/345B05D3/145C23C14/50C23C14/568G11B5/8404
    • A disk gripper for gripping an insulating disk, such as a glass disk, at its edge during processing includes a contact device for contacting the edge of the insulating disk and a mechanism for moving the contact device between a contact position, in contact with the edge of the disk, and a retracted position. In a first processing station, a conductive coating is applied to a disk held by the gripper, with the contact device in the retracted position. In a second processing station, ions are generated in a plasma adjacent to the surface of the disk held by the gripper. The contact device is in the contact position in contact with the conductive coating, and a bias voltage is applied to the contact device in the second processing station. The ions are accelerated from the plasma toward the disk by the bias voltage applied to the conductive coating.
    • 用于在加工过程中在其边缘处夹持诸如玻璃盘的绝缘盘的盘夹持器包括用于接触绝缘盘的边缘的接触装置和用于使接触装置在与边缘接触的接触位置之间移动的机构 的缩回位置。 在第一处理站中,将导电涂层施加到由夹持器保持的盘上,其中接触装置处于缩回位置。 在第二处理站中,在由夹持器保持的盘的表面附近的等离子体中产生离子。 接触装置处于与导电涂层接触的接触位置,并且偏压被施加到第二处理站中的接触装置。 通过施加到导电涂层的偏置电压将离子从等离子体加速到盘。
    • 3. 发明授权
    • Plasma processing system and method
    • 等离子体处理系统及方法
    • US06368678B1
    • 2002-04-09
    • US09495548
    • 2000-02-01
    • Terry BluckJames H. Rogers
    • Terry BluckJames H. Rogers
    • H05H124
    • H01J37/32009C23C16/26C23C16/50C23C16/513H01J37/3178H01J37/3233H01J2237/08H01J2237/0822H01J2237/3142
    • A substrate processing system includes a processing chamber, an electrically floating substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode in a train of pulses of selectably variable duty cycle and magnitude to maintain a selected time averaged current, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on the floating substrate holder in the chamber. The floating substrate is biased in accord with the net charge thereon as controlled by the energetic electron flux. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.
    • 基板处理系统包括处理室,定位在室中的电浮置基板保持器,用于向室提供处理气体的气体源,位于室中的至少一个离子源,以及用于激励离子源的电源 通过积极偏置阳极并且以可选择的可变占空比和幅度的脉冲序列负偏置阴极以保持所选择的时间平均电流,每种情况下的偏压相对于室。 离子源离子化产生离子的工艺气体,以处理设置在腔室中的浮动衬底保持器上的衬底。 浮动衬底在其上由与能量电子通量控制的净电荷相一致地被偏置。 一个实施例包括两个这样的离子源。 在这种情况下,电源以时间复用的方式激励第一和第二阳极和阴极,使得在任何时间仅使第一或第二离子源中的仅一个被激励,并且消除离子源之间的相互作用。