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1. 发明申请

WO2007082373A1 A TUNABLE SEMICONDUCTOR COMPONENT PROVIDED WITH A CURRENT BARRIER 审中-公开
标题翻译：一个提供电流阻挡器的可控半导体元件
公开(公告)号：WO2007082373A1
公开(公告)日：2007-07-26
申请号：PCT/CA2007/000065
申请日：2007-01-17
申请人： TECHNOLOGIES LTRIM INC. , LACOURSE, Alain , DUCHARME, Mathieu , ST-LAURENT, Hugo , GAGNON, Yves , SAVARIA, Yvon , MEUNIER, Michel
发明人： LACOURSE, Alain , DUCHARME, Mathieu , ST-LAURENT, Hugo , GAGNON, Yves , SAVARIA, Yvon , MEUNIER, Michel
IPC分类号： H01L23/64 , H01L21/467
CPC分类号： H01L23/647 , H01L21/02697 , H01L27/08 , H01L29/0646 , H01L29/0692 , H01L29/8605 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.
摘要翻译：提供了包括电流屏障元件的半导体元件或器件，并且可以使用聚焦加热源对阻抗进行调谐（即修改，改变等）。

2. 发明申请

WO2004017409A1 METHOD FOR MODIFYING THE IMPEDANCE OF SEMICONDUCTOR DEVICES USING A FOCUSED HEATING SOURCE 审中-公开
标题翻译：使用聚焦加热源修改半导体器件阻抗的方法
公开(公告)号：WO2004017409A1
公开(公告)日：2004-02-26
申请号：PCT/CA2003/001199
申请日：2003-08-08
申请人： TECHNOLOGIES LTRIM INC.
发明人： LACOURSE, Alain , LANGLOIS, Hugues , SAVARIA, Yvon , GAGNON, Yves
IPC分类号： H01L27/08
CPC分类号： H01L28/20 , H01C17/26 , H01L21/268 , H01L21/324 , H01L21/76894 , H01L27/0802 , H01L29/66166
摘要： A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.
摘要翻译：提供了一种用于使用聚焦加热源来调谐（即修改，改变）半导体部件或器件的阻抗的方法。该方法可用于微调半导体组件或器件的阻抗，通过通过掺杂剂从较高掺杂剂浓度的相邻区域扩散通过熔融作用来改变掺杂剂浓度低的区域的掺杂剂分布（即增加掺杂剂浓度）的聚焦加热源，例如激光。本发明特别涉及激光器相对于用于创建之前不存在的导电链路和路径的电路的使用。本发明更具体地涉及一种其中阻抗修改（即修整或调谐）可以有利地作为沿着间隙区域的长度的一个或多个导电桥的位置的函数来执行的装置。

3. 发明公开

EP1535333A1 METHOD FOR MODIFYING THE IMPEDANCE OF SEMICONDUCTOR DEVICES USING A FOCUSED HEATING SOURCE 审中-公开
标题翻译：用于修饰的半导体部件的阻抗的方法使用聚焦热源
公开(公告)号：EP1535333A1
公开(公告)日：2005-06-01
申请号：EP03787537.4
申请日：2003-08-08
申请人： Technologies Ltrim, Inc.
发明人： LACOURSE, Alain , LANGLOIS, Hugues , SAVARIA, Yvon , GAGNON, Yves
IPC分类号： H01L27/08 , H01L21/02 , H01C17/242 , H01L21/329 , H01L29/8605
CPC分类号： H01L28/20 , H01C17/26 , H01L21/268 , H01L21/324 , H01L21/76894 , H01L27/0802 , H01L29/66166
摘要： A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

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