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1. 发明专利

JP2008042103A Exchange-coupling film, magnetoresistance effect element, thin film magnetic head, head gimbal assembly, head arm assembly, and magnetic disk unit 审中-公开
标题翻译：交换耦合膜，磁阻效应元件，薄膜磁头，头部组件，头臂组件和磁盘单元
公开(公告)号：JP2008042103A
公开(公告)日：2008-02-21
申请号：JP2006217638
申请日：2006-08-10
申请人： Tdk Corp , Tdk株式会社
发明人： UESUGI TAKUMI , MIURA SATOSHI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/16 , H01F10/3272 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To enlarge an exchange engagement magnetic field at exchange-coupling film having an anti-ferromagnetic laminated layer, and a fixed layer which has a synthetic structure.
SOLUTION: An exchange-coupling film 30 has an anti-ferromagnetic layer 22 and a fixed layer 23. The fixed layer 23 includes a first layer 311, a second layer 312, a third layer 313, a non-magnetism interlayer 32 and an inner layer 33, which are arranged sequentially in order of distance near to the anti-ferromagnetic layer 22. The first layer 311 consists of ferromagnetic material and has a face centered cubic structure. The second layer 312 contains cobalt of x atom%, and iron of (100-x) atom%, and is made of alloy, where x is larger than zero and not larger than 60, or is made of only iron. The third layer 313 contains cobalt of y atom%, and iron of (100-y) atom%, and is made of alloy, where y is from 65 to 80. The anti-ferromagnetism layer 22 and the first layer 311 is subjected to switched connection. The third layer 313 and inner layer 33 are combined in anti-ferromagnetism.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：扩大具有反铁磁层压层的交换耦合膜和具有合成结构的固定层的交换接合磁场。解决方案：交换耦合膜30具有反铁磁层22和固定层23.固定层23包括第一层311，第二层312，第三层313，非磁性层间32 以及内层33，其按照靠近反铁磁层22的距离顺序排列。第一层311由铁磁材料构成，并具有面心立方结构。第二层312包含x原子％的钴和（100-x）原子％的铁，并且由合金制成，其中x大于零且不大于60，或仅由铁制成。第三层313包含y原子％的钴和（100-y）原子％的铁，并且由合金制成，其中y为65至80.抗铁磁层22和第一层311经受切换连接。第三层313和内层33以反铁磁性组合。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007305771A Method for fabricating tunnel magnetoresistive effect element, method for manufacturing thin film magnetic head and method for fabricating magnetic memory 有权
标题翻译：用于制造隧道磁阻效应元件的方法，制造薄膜磁头的方法和制造磁性存储器的方法
公开(公告)号：JP2007305771A
公开(公告)日：2007-11-22
申请号：JP2006132410
申请日：2006-05-11
申请人： Tdk Corp , Tdk株式会社
发明人： MIURA SATOSHI , UESUGI TAKUMI
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , H01F10/3254 , H01F41/307
摘要： PROBLEM TO BE SOLVED: To provide a method for fabricating a TMR element in which a TMR element having a high MR ratio can be obtained stably, and to provide a method for manufacturing a thin film magnetic head.
SOLUTION: In the method for fabricating a TMR element having a tunnel barrier layer sandwiched between ferromagnetic layers, a process for making the tunnel barrier layer comprises a step for depositing a first metallic material film on the ferromagnetic layer, and a step for oxidizing the first metallic material film thus deposited under an environment where the impurity concentration is 1E-02 or less.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以稳定地获得具有高MR比的TMR元件的TMR元件的制造方法，提供薄膜磁头的制造方法。解决方案：在用于制造具有夹在铁磁层之间的隧道势垒层的TMR元件的方法中，用于制造隧道势垒层的工艺包括在铁磁层上沉积第一金属材料膜的步骤，以及用于在杂质浓度为1E-02以下的环境下氧化由此沉积的第一金属材料膜。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005032780A Magnetoresistive effect element, magnetic head using the same, head suspension assembly, and magnetic disk unit 审中-公开
标题翻译：磁阻效应元件，使用其的磁头，头悬挂组件和磁盘单元
公开(公告)号：JP2005032780A
公开(公告)日：2005-02-03
申请号：JP2003193230
申请日：2003-07-07
申请人： Tdk Corp , Tdk株式会社
发明人： KAGAMI TAKERO , UESUGI TAKUMI , MIURA SATOSHI , TAKAHASHI NORIO
IPC分类号： G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/256
摘要： PROBLEM TO BE SOLVED: To improve the MR ratio of a magnetoresistive effect element or to shorten the time required for cleaning the surface of a cap layer by employing the new configuration of the cap layer. SOLUTION: The cap layer 28 is formed as a protective film on the top surface of the uppermost free layer 27 of magnetoresistive effect layers 24 to 27 constituting a TMR element 2. An upper electrode 31 serving also as the upper magnetic shield layer is electrically connected to the free layer 27 through the intermediary of an upper metal layer 29. The cap layer 28 is a two-layered film composed of a metal layer 28a on a free layer 27 side and an outermost metal layer 28b. The metal layer 28b is made of material, such as Zr, Hf, etc, which is higher than Ru in binding energy to oxygen. The metal layer 28b is made of material, such as precious metal etc, which is low in binding energy to oxygen. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过采用盖层的新构造，提高磁阻效应元件的MR比或缩短清洁盖层表面所需的时间。解决方案：盖层28在构成TMR元件2的磁阻效应层24至27的最上层自由层27的顶表面上形成为保护膜。还用作上磁屏蔽层的上电极31 通过上层金属层29与自由层27电连接。盖层28是由自由层27侧的金属层28a和最外层金属层28b构成的两层膜。金属层28b由与氧结合能高于Ru的材料制成，例如Zr，Hf等。金属层28b由与氧的结合能低的材料例如贵金属等制成。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2003298147A Magneto-resistance effect element, magnetic head, head suspension assembly and magnetic disk device 审中-公开
标题翻译：磁阻效应元件，磁头，头悬挂组件和磁盘设备
公开(公告)号：JP2003298147A
公开(公告)日：2003-10-17
申请号：JP2002099737
申请日：2002-04-02
申请人： Tdk Corp , Tdk株式会社
发明人： KAGAMI TAKERO , UESUGI TAKUMI
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To have a structure obtained by laminating a magnetic domain control film applying a bias magnetic field to a free layer on a magneto-resistance effect layer, and simultaneously to obtain, in the free layer, the bias magnetic field enough to suppress Barkhausen noises even if a valid track width is narrow. SOLUTION: An antiferromagnetic layer 23 laminated through a non-magnetic metal layer 24 on a free layer 25 applies an exchange coupling magnetic field to the free layer 25 in a track width direction as a bias magnetic field. The antiferromagnetic layer 23, non-magnetic metal layer 24 and free layer 25 are formed so as to range from a valid area of the magneto-resistance effect layer to an area expanding on both sides in the track width direction. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得通过将施加偏磁场的磁畴控制膜层叠到磁阻效应层上的自由层而获得的结构，并且同时在自由层中获得偏磁即使有效的轨道宽度窄，也足以抑制巴克豪森噪声。解决方案：通过自由层25上的非磁性金属层24层叠的反铁磁层23将作为偏磁场的轨道宽度方向的自由层25的交换耦合磁场施加。反铁磁层23，非磁性金属层24和自由层25形成为从磁阻效应层的有效区域到轨道宽度方向两侧扩大的区域的范围。版权所有（C）2004，JPO

5. 发明专利

JP2006173254A Manufacturing process of magnetoresistive effect element 审中-公开
标题翻译：磁电效应元件的制造工艺
公开(公告)号：JP2006173254A
公开(公告)日：2006-06-29
申请号：JP2004361544
申请日：2004-12-14
申请人： Tdk Corp , Tdk株式会社
发明人： UESUGI TAKUMI , MIURA SATOSHI , TAKAHASHI NORIO , KANETANI TAKAYASU
IPC分类号： H01L43/12 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing process of a magnetoresistive effect element in which an upper layer of a barrier layer can inherits a crystal structure of a lower layer.
SOLUTION: At first, a pinned layer 55 is formed. A metal layer 53a becoming the precursor of an oxide barrier layer 53 is then formed on the pinned layer, and a free layer 57 is formed thereon. Subsequently, the free layer, the metal layer and the pinned layer are patterned into a desired element profile by etching, e.g. milling. Thereafter, the patterned element is heated in oxygen atmosphere and oxygen is diffused from the sidewall of the metal layer. Consequently, the metal layer as the precursor is oxidized and an oxide barrier layer is formed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供阻挡层的上层可以承受下层的晶体结构的磁阻效应元件的制造工艺。解决方案：首先，形成钉扎层55。然后，在被钉扎层上形成成为氧化物阻挡层53的前体的金属层53a，在其上形成自由层57。随后，通过蚀刻，例如，将自由层，金属层和被钉扎层图案化成所需的元件轮廓。铣削。此后，图案化元件在氧气氛中被加热，氧从金属层的侧壁扩散。因此，作为前体的金属层被氧化并形成氧化物阻挡层。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006114932A Magnetic transducer, thin-film magnetic head, and method of manufacturing same 审中-公开
标题翻译：磁性传感器，薄膜磁头及其制造方法
公开(公告)号：JP2006114932A
公开(公告)日：2006-04-27
申请号：JP2005379285
申请日：2005-12-28
申请人： Tdk Corp , Tdk株式会社
发明人： SANO MASASHI , ARAKI SATORU , TSUCHIYA YOSHIHIRO , UESUGI TAKUMI
IPC分类号： H01L43/08 , G11B5/39 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic transducer and a thin-film magnetic head having good thermal stability and capable of obtaining a high exchange coupling magnetic field, and a method of manufacturing the same. SOLUTION: An MR element has a stack 20 having a stack structure comprising an under layer 21, a crystal-growth inhibitor layer 22, a first soft magnetic layer 23, a second soft magnetic layer 24, a nonmagnetic layer 25, a ferromagnetic layer 26, an antiferromagnetic layer 27, and a protective layer 28, which are stacked in sequence. The ferromagnetic layer 26 has an inner ferromagnetic layer 26a, a coupling layer 26b, and an outer ferromagnetic layer 26c, which are stacked in this order on the nonmagnetic layer 25. The crystal-growth inhibitor layer 22, by inhibiting crystal growth of the layer formed thereon, limits an average in-surface particle diameter of the inner ferromagnetic layer 26a to a range between 3 nm and 8 nm, so that an interface between the inner ferromagnetic layer 26a and the coupling layer 26b is flattened. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供具有良好的热稳定性并且能够获得高交换耦合磁场的磁换能器和薄膜磁头及其制造方法。解决方案：MR元件具有堆叠结构20，该堆叠结构包括下层21，晶体生长抑制层22，第一软磁层23，第二软磁层24，非磁性层25，铁磁层26，反铁磁层27和保护层28。铁磁层26具有在非磁性层25上依次层叠的内侧铁磁性层26a，耦合层26b和外部铁磁层26c。晶体生长抑制层22通过抑制层的晶体生长在其上形成的内侧铁磁层26a的平均表面内径粒径限制在3nm和8nm之间的范围内，使得内部铁磁层26a和耦合层26b之间的界面变平。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006013298A Apparatus for determining predicted service life and apparatus for determining voltage of tmr element 审中-公开
标题翻译：用于确定预期服务寿命的装置和用于确定TMR元件电压的装置
公开(公告)号：JP2006013298A
公开(公告)日：2006-01-12
申请号：JP2004191063
申请日：2004-06-29
申请人： Tdk Corp , Tdk株式会社
发明人： INAGE KENJI , UESUGI TAKUMI , KUWAJIMA TETSUYA
IPC分类号： H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide an apparatus or the like for determining a predicted service life predicting and determining the service life of a TMR element.
SOLUTION: The apparatus 11 for determining a predicted service life includes: a voltage value receiver 15 for receiving an applied voltage value V to the TMR element; a constant value receiver 17 for receiving a first constant value A and a second constant value B, an exponentiating calculator 19 for calculating the power of a value of a base e of a natural logarithm; and a predicted service life determination part 13 for determining the predicted service life T of the TMR element through the use of the exponentiating calculator from the result obtained by the voltage value receiver and the constant value receiver according to the equation of T=A×exp (B/V).
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于确定预测和确定TMR元件的使用寿命的预测使用寿命的装置等。解决方案：用于确定预期使用寿命的装置11包括：电压值接收器15，用于接收施加的电压值V到TMR元件; 用于接收第一常数值A和第二常数值B的常数值接收器17，用于计算自然对数的基底e的值的幂的指数运算器19; 以及预测使用寿命确定部13，用于根据由电压值接收器和常数值接收器得到的结果，通过使用指数运算器来确定TMR元件的预测使用寿命T，根据T = A×exp （B / V）。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005044950A Magnetic storage cell and magnetic memory device using the same 有权
标题翻译：磁性存储单元和使用该磁性存储单元的磁存储器件
公开(公告)号：JP2005044950A
公开(公告)日：2005-02-17
申请号：JP2003202136
申请日：2003-07-25
申请人： Tdk Corp , Tdk株式会社
发明人： UESUGI TAKUMI , KAGAMI TAKERO
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To eliminate the common mode noise in a read output by constituting a magnetic storage cell using two magnetoresistive effect elements, to efficiently perform magnetization inversion by reducing the loss of a current magnetic field at the time of writing information, to increase the capacity of the storage by suppressing the occupied area of the magnetic storage cell, and to facilitate the manufacturing by simplifying the configuration. SOLUTION: The storage cell 1 is provided with two TMR elements 2a, 2b, and a circular magnetization layer 4 commonly provided between the TMR elements 2a, 2b. The TMR elements 2a, 2b are disposed in a direction along each other's stacked surfaces. A writing bit line 5 and a writing word line 6 are commonly provided between the two TMR elements 2a, 2b. The magnetization layer 4 is disposed so as to have an axial direction along the stacked direction, and constituted so as to be pierced by the plurality of conductor lines. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过使用两个磁阻效应元件构成磁存储单元来消除读取输出中的共模噪声，通过减少写入信息时的电流磁场损失来有效地执行磁化反转通过抑制磁存储单元的占用面积来增加存储容量，并且通过简化配置便于制造。解决方案：存储单元1设置有两个TMR元件2a，2b和通常设置在TMR元件2a，2b之间的圆形磁化层4。 TMR元件2a，2b沿着彼此的堆叠表面的方向设置。写入位线5和写入字线6通常设置在两个TMR元件2a，2b之间。磁化层4被设置为具有沿堆叠方向的轴向，并且被构造成被多根导线刺穿。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2008135432A Tunnel magnetoresistive effect element and manufacturing method thereof 审中-公开
标题翻译：隧道磁阻效应元件及其制造方法
公开(公告)号：JP2008135432A
公开(公告)日：2008-06-12
申请号：JP2006318275
申请日：2006-11-27
申请人： Tdk Corp , Tdk株式会社
发明人： MIURA SATOSHI , UESUGI TAKUMI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01F10/30 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12 , Y10T428/1114
摘要： PROBLEM TO BE SOLVED: To provide a TMR element capable of obtaining a high MR ratio without performing high-temperature annealing treatment when using a tunnel barrier layer made of a crystalline insulating material, and to provide a thin-film magnetic head, a magnetic memory, and a method of manufacturing the TMR element. SOLUTION: There are provided: a lower magnetic layer; an upper magnetic layer; and a tunnel barrier layer made of the crystalline insulating material sandwiched by the lower and upper magnetic layers. The lower magnetic layer contains a first magnetic layer, and a second magnetic layer sandwiched between the first magnetic layer and the tunnel barrier layer. The second magnetic layer is composed of a magnetic material including at least one of Fe, cobalt Co, and nickel Ni. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够在使用由结晶绝缘材料制成的隧道势垒层的情况下不进行高温退火处理而获得高MR比的TMR元件，并且提供薄膜磁头，磁存储器和制造TMR元件的方法。
解决方案：提供：下磁层; 上磁层; 以及由下部和上部磁性层夹持的结晶绝缘材料制成的隧道势垒层。下磁性层包含第一磁性层和夹在第一磁性层和隧道势垒层之间的第二磁性层。第二磁性层由包括Fe，钴Co和镍Ni中的至少一种的磁性材料构成。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007305768A Method for fabricating tunnel magnetoresistive effect element, method for manufacturing thin film magnetic head and method for fabricating magnetic memory 审中-公开
标题翻译：用于制造隧道磁阻效应元件的方法，制造薄膜磁头的方法和制造磁性存储器的方法
公开(公告)号：JP2007305768A
公开(公告)日：2007-11-22
申请号：JP2006132400
申请日：2006-05-11
申请人： Tdk Corp , Tdk株式会社
发明人： MIURA SATOSHI , UESUGI TAKUMI
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3912 , H01F10/3254 , H01F41/307
摘要： PROBLEM TO BE SOLVED: To provide a method for fabricating a TMR element in which a high quality TRM film including a barrier layer having a high MR ratio and little pin hole can be obtained stably, and to provide a method for manufacturing a thin film magnetic head and a method for fabricating a magnetic memory.
SOLUTION: In the method for fabricating a TMR element having a tunnel barrier layer sandwiched between ferromagnetic layers, a process for making the tunnel barrier layer comprises a step for depositing a first metallic material film on the ferromagnetic layer, a step for oxidizing the first metallic material film thus deposited, a step for depositing a second metallic material film of the same metallic material as that of the first metallic material film or a metallic material principally comprising the first metallic material on the metal oxide film obtained by oxidation, and a step for oxidizing the second metallic material film thus deposited under oxygen pressure lower than that when the first metallic material film is oxidized.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造TMR元件的方法，其中可以稳定地获得包括具有高MR比和低针孔的阻挡层的高品质TRM膜，并且提供一种制造方法薄膜磁头和制造磁记忆体的方法。解决方案：在用于制造具有夹在铁磁层之间的隧道势垒层的TMR元件的方法中，制造隧道势垒层的工艺包括在铁磁层上沉积第一金属材料膜的步骤，用于氧化的步骤由此沉积的第一金属材料膜，用于将与第一金属材料膜相同的金属材料的第二金属材料膜或主要包含第一金属材料的金属材料沉积在通过氧化获得的金属氧化物膜上的步骤，以及在氧压低于第一金属膜被氧化时的氧化下氧化由此沉积的第二金属材料膜的步骤。版权所有（C）2008，JPO＆INPIT

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