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1. 发明专利

JP2008102991A Board, its manufacturing method, magnetic head device, and its manufacturing method 审中-公开
标题翻译：板，其制造方法，磁头装置及其制造方法
公开(公告)号：JP2008102991A
公开(公告)日：2008-05-01
申请号：JP2006283004
申请日：2006-10-17
申请人： Tdk Corp , Tdk株式会社
发明人： KAMIMURA TAKAMITSU , SUGAWARA MASAHITO , TAKAHASHI NORIO , MAEJIMA KAZUHIKO
IPC分类号： G11B5/31
摘要： PROBLEM TO BE SOLVED: To provide a board which can prevent occurrence of an unintended short circuit and its manufacturing method, and a magnetic head device and its manufacturing method.
SOLUTION: The magnetic head device 100 has a board 10 which is made by laminating a metal oxide layer 14 comprising alumina on a conductor layer 12 comprising AlTic (Al
2 O
3 .Tic), and a thin film magnetic head which is laminated on the board 10. A through hole 14b penetrating in a laminating direction exists in the metal oxide layer 14. Inside of the through hole 14b is filled up with a resist 16 of the metal oxide layer 14. Consequently even if laminating of the lower magnetic shield layer 22 is further carried out on the board 10, it becomes possible to prevent occurrence of unintended short circuit between a conductor layer 12 and a lower magnetic shield layer 22, since the resist 16 exists in the through hole 14b.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以防止意外的短路发生的电路板及其制造方法以及磁头装置及其制造方法。解决方案：磁头装置100具有板10，该板10由包含氧化铝的金属氧化物层14在包含AlTic（Al 2 O 3）的导体层12上层压而制成， SB> .Tic）和层叠在基板10上的薄膜磁头。在金属氧化物层14中存在贯穿层叠方向的通孔14b。在通孔14b的内部填充有抗蚀剂16 因此，即使在板10上进一步进行下磁屏蔽层22的层叠，也可以防止在导体层12与下磁屏蔽层22之间发生意外的短路，由于抗蚀剂16存在于通孔14b中。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006173254A Manufacturing process of magnetoresistive effect element 审中-公开
标题翻译：磁电效应元件的制造工艺
公开(公告)号：JP2006173254A
公开(公告)日：2006-06-29
申请号：JP2004361544
申请日：2004-12-14
申请人： Tdk Corp , Tdk株式会社
发明人： UESUGI TAKUMI , MIURA SATOSHI , TAKAHASHI NORIO , KANETANI TAKAYASU
IPC分类号： H01L43/12 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing process of a magnetoresistive effect element in which an upper layer of a barrier layer can inherits a crystal structure of a lower layer.
SOLUTION: At first, a pinned layer 55 is formed. A metal layer 53a becoming the precursor of an oxide barrier layer 53 is then formed on the pinned layer, and a free layer 57 is formed thereon. Subsequently, the free layer, the metal layer and the pinned layer are patterned into a desired element profile by etching, e.g. milling. Thereafter, the patterned element is heated in oxygen atmosphere and oxygen is diffused from the sidewall of the metal layer. Consequently, the metal layer as the precursor is oxidized and an oxide barrier layer is formed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供阻挡层的上层可以承受下层的晶体结构的磁阻效应元件的制造工艺。解决方案：首先，形成钉扎层55。然后，在被钉扎层上形成成为氧化物阻挡层53的前体的金属层53a，在其上形成自由层57。随后，通过蚀刻，例如，将自由层，金属层和被钉扎层图案化成所需的元件轮廓。铣削。此后，图案化元件在氧气氛中被加热，氧从金属层的侧壁扩散。因此，作为前体的金属层被氧化并形成氧化物阻挡层。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005340430A Method and apparatus for inspecting tunnel magneto-resistance effect element 审中-公开
标题翻译：用于检查隧道磁阻效应元件的方法和装置
公开(公告)号：JP2005340430A
公开(公告)日：2005-12-08
申请号：JP2004156013
申请日：2004-05-26
申请人： Tdk Corp , Tdk株式会社
发明人： SARUGI SHUNJI , HACHISUGA NOZOMI , TAKAHASHI NORIO
IPC分类号： G01R33/09 , G11B5/39 , G11B5/455 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for inspecting a TMR element by which the stability and the reliability of the TMR element can be quickly and surely checked without breaking the element.
SOLUTION: An initial resistance value of the TMR element is measured as a first resistance value, a resistance value obtained after applying a voltage higher than a normally-used voltage to the TMR element is measured as a second resistance value, and the TMR element is evaluated in accordance with a change degree of the second resistance value from the first resistance value.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于检查TMR元件的方法和装置，通过该方法和装置，可以快速可靠地检查TMR元件的稳定性和可靠性，而不破坏元件。解决方案：测量TMR元件的初始电阻值作为第一电阻值，将对正常使用的电压施加的电压施加到TMR元件后获得的电阻值作为第二电阻值被测量，根据第一电阻值的第二电阻值的变化程度来评估TMR元件。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2011258300A Magnetic head, head assembly, magnetic recording and reproducing device, and method for manufacturing the device 审中-公开
标题翻译：磁头，头部组件，磁记录和再现装置，以及制造装置的方法
公开(公告)号：JP2011258300A
公开(公告)日：2011-12-22
申请号：JP2011058936
申请日：2011-03-17
申请人： Tdk Corp , Tdk株式会社
发明人： ANTOKU YOSUKE , TAKAHASHI NORIO , KURIHARA KATSUKI
IPC分类号： G11B5/31
CPC分类号： G11B5/6011 , G11B5/3163 , G11B5/607 , Y10T29/49027
摘要： PROBLEM TO BE SOLVED: To provide a magnetic head capable of improving performances of recording and/or reproducing information, a head assembly, a magnetic recording and reproducing device, and a method for manufacturing the device.SOLUTION: The magnetic head is obtained in steps of: (1) forming a protective film 25 to cover a face A opposing to a magnetic medium; (2) disposing the head in a chassis of a magnetic recording and reproducing device provided with a magnetic recording medium M, to allow the face A opposing to the magnetic medium to oppose to the surface of the magnetic medium M; (3) rotating the magnetic recording medium M while supplying power to a heating resistor H to generate heat, and expanding the face A opposing to the magnetic medium by thermal expansion with the generated heat so as to bring the protective film 25 into contact with the magnetic recording medium M; and (4) grinding to remove a portion of the protective film 25 covering at least one of a reproducing element S and a recording element P.
摘要翻译：要解决的问题：提供一种能够改善记录和/或再现信息的性能的磁头，磁头组件，磁记录和再现装置以及用于制造该装置的方法。解决方案：以下步骤获得磁头：（1）形成保护膜25以覆盖与磁性介质相对的面A; （2）将头部设置在具有磁记录介质M的磁记录和再现装置的底盘中，以允许与磁介质相对的面A与磁介质M的表面相对; （3）在向加热电阻器H供电的同时转动磁记录介质M以产生热量，并且通过产生的热量通过热膨胀将与磁介质相对的面A扩大，以使保护膜25与磁记录介质M; 和（4）研磨以去除覆盖再现元件S和记录元件P中的至少一个的保护膜25的一部分。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2008269760A Method for removing smear and magnetic recording/reproducing apparatus with function of removing smear 审中-公开
标题翻译：移除中小企业和磁带记录/再生装置的方法
公开(公告)号：JP2008269760A
公开(公告)日：2008-11-06
申请号：JP2008027447
申请日：2008-02-07
申请人： Shinka Jitsugyo Kk , Tdk Corp , Tdk株式会社 , 新科實業有限公司SAE Magnetics(H.K.)Ltd.
发明人： SAWADA YOSHIKAZU , TAKAHASHI NORIO , HIROSE MASARU , OTSUKI MITSUO , TOYODA SHOJI , LAI ANTHONY WAI YUEN
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/455 , G11B2005/3996
摘要： PROBLEM TO BE SOLVED: To provide a smear-removing method for removing smear of a manufactured thin-film magnetic head.
SOLUTION: The smear removing method is performed to a thin-film magnetic head including an MR effect element for reading data having two electrode layers sandwiching an MR effect laminated body as a magneto-sensitive portion therebetween. The method includes the step of applying a stress voltage less than the breaking voltage of the MR effect element between the two electrode layers to burn off smear. In the method, it is preferable that the stress voltage is applied while the electric resistance or the output voltage of the MR effect element is measured, and the stress voltage is increased until the value of the electric resistance or the output voltage reaches an upper limit specified value specified from the value of the electric resistance or the output voltage in a normal case where the smear is not present.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于去除制造的薄膜磁头的污迹的涂抹去除方法。解决方案：对包括用于读取具有两个电极层的数据的MR效应元件的薄膜磁头执行涂抹去除方法，该两个电极层夹在MR效应层叠体之间作为磁敏部分。该方法包括在两个电极层之间施加小于MR效应元件的断开电压的应力电压以烧毁涂抹的步骤。在该方法中，优选在测量MR效应元件的电阻或输出电压时施加应力电压，并且应力电压增加直到电阻值或输出电压值达到上限在不存在涂片的正常情况下由电阻值或输出电压值指定的指定值。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007004857A Magnetic disk apparatus having tunnel magneto-resistive head element 审中-公开
标题翻译：具有隧道磁阻头元件的磁盘设备
公开(公告)号：JP2007004857A
公开(公告)日：2007-01-11
申请号：JP2005181628
申请日：2005-06-22
申请人： Tdk Corp , Tdk株式会社
发明人： HACHISUGA NOZOMI , OTA NAOKI , TAKAHASHI NORIO , ANTOKU YOSUKE
IPC分类号： G11B5/455 , G11B5/02 , G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic disk apparatus having a TMR head element capable of easily and surely monitoring the TMR head element even during actual operation, and to provide a head amplifier for a magnetic disk apparatus having the TMR head element.
SOLUTION: The apparatus is provided with: an applying means capable of applying a plurality of voltages or currents different in value are to the TMR head element; a measuring means for measuring a resistance value of the TMR head element while the plurality of voltages or currents are applied respectively; a resistance change rate calculating means for calculating a resistance change rate from the plurality of resistance values obtained by measurement; and a self monitor system including an identifying means for identifying a state of the TMR head element by comparing the calculated resistance change rate with at least one threshold value.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有TMR头元件的磁盘装置，即使在实际操作中也能够容易且可靠地监视TMR头元件，并且提供一种用于具有TMR头元件的磁盘装置的头放大器。解决方案：该装置具有：能够向TMR头元件施加不同值的多个电压或电流的施加装置; 测量装置，用于分别施加所述多个电压或电流时测量所述TMR头元件的电阻值; 电阻变化率计算装置，用于通过测量获得的多个电阻值计算电阻变化率; 以及自我监视系统，其包括识别装置，用于通过将计算的电阻变化率与至少一个阈值进行比较来识别TMR头元件的状态。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006286669A Method of manufacturing magnetoresistance effect element 审中-公开
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2006286669A
公开(公告)日：2006-10-19
申请号：JP2005100397
申请日：2005-03-31
申请人： Tdk Corp , Tdk株式会社
发明人： MIURA SATOSHI , UESUGI TAKUMI , TAKAHASHI NORIO
IPC分类号： H01L43/12 , G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To enlarge an MR ratio and reduce the coercive force of a free layer in an MR element using a tunnel magnetoresistance effect. SOLUTION: A method of manufacturing the MR element 5 includes a step of forming a magnetization fixed layer 22 on an underlying layer 21, a step of forming a tunnel barrier layer 23 on the magnetization fixed layer 22, and a step of forming the free layer 24 on the tunnel barrier layer 23. The step of forming the magnetization fixed layer 22 forms the magnetization fixed layer 22 in the state that the temperature of the substrate 1 is made into 0°C or higher. The step of forming the free layer 24 is conducted in the state that the temperature of the substrate 1 is 0°C or lower, and the substrate 1 is cooled so that it may become the temperature lower than 30°C or higher than the temperature of the substrate 1 in the step of forming the magnetization fixed layer 22. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：使用隧道磁阻效应来扩大MR比并降低MR元件中的自由层的矫顽力。解决方案：制造MR元件5的方法包括在下层21上形成磁化固定层22的步骤，在磁化固定层22上形成隧道势垒层23的步骤和形成隧道势垒层23上的自由层24.形成磁化固定层22的步骤在基板1的温度为0℃以上的状态下形成磁化固定层22。形成自由层24的步骤是在基板1的温度为0℃以下的状态下进行的，将基板1冷却，使其成为温度低于30℃以上的温度在形成磁化固定层22的步骤中，基板1的位置。（C）2007，JPO＆INPIT

8. 发明专利

JP2006147074A Thin film magnetic head, manufacturing method thereof, thin film magnetic head integrated substrate, method of manufacturing sample for analysis, and method of analyzing thin film magnetic head 审中-公开
标题翻译：薄膜磁头及其制造方法，薄膜磁头集成基板，制造分析样品的方法和分析薄膜磁头的方法
公开(公告)号：JP2006147074A
公开(公告)日：2006-06-08
申请号：JP2004337291
申请日：2004-11-22
申请人： Tdk Corp , Tdk株式会社
发明人： OTA NAOKI , KASAHARA HIROAKI , SATO KAZUKI , TAKAHASHI NORIO
IPC分类号： G11B5/31
摘要： PROBLEM TO BE SOLVED: To provide a thin film magnetic head suitable for structure confirmation and analysis such as component analysis of a minute part at a laminated cross section. SOLUTION: The thin film magnetic head 1 is provided with a magnetic transducing element 20, first grinding patterns 31 and second grinding patterns 32 both of which have shapes where dimensions in a height direction indicate variation (increase and decrease) in mutually reverse directions along the direction of a track width. Wherein, a center position CX extending along the height direction passes through the magnetic conversion element 20 and the first grinding patterns 31 and the second grinding patterns 32. When grinding work is carried out along the track width direction, the respective dimensions of the height direction of the first grinding patterns 31 and the second grinding patterns 32 appearing to a grinding surface are varied continuously according to its grinding amount. When the grinding surface reaches the center position CX, the dimensions come to have prescribed ratios to each other. When finishing grinding at this time, a desired laminated cross section coincident with the center position CX is obtained. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种适用于结构确认和分析的薄膜磁头，例如在层叠横截面上的分钟分量分析。解决方案：薄膜磁头1设置有磁转换元件20，第一研磨图案31和第二研磨图案32，两者都具有在高度方向上的尺寸指示彼此相反的变化（增减）的形状沿轨道宽度方向的方向。其中，沿着高度方向延伸的中心位置CX通过磁转换元件20和第一研磨图案31和第二研磨图案32.当沿着轨道宽度方向进行研磨加工时，高度方向的相应尺寸的第一研磨图案31和第二研磨图案32在研磨面上出现，根据其研磨量而连续变化。当研磨表面到达中心位置CX时，尺寸彼此具有规定的比例。此时进行精加工时，获得与中心位置CX一致的期望的层叠截面。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2006128453A Magnetoresistance effect element, thin film magnetic head having the magnetoresistance effect element, head gimbal assembly having the thin film magnetic head, and magnetic disc device having the head gimbals assembly 审中-公开
标题翻译：磁阻效应元件，具有磁阻效应元件的薄膜磁头，具有薄膜磁头的头部组件和具有头部金属组件的磁性装置
公开(公告)号：JP2006128453A
公开(公告)日：2006-05-18
申请号：JP2004315984
申请日：2004-10-29
申请人： Tdk Corp , Tdk株式会社
发明人： UESUGI TAKUMI , MIURA SATOSHI , TAKAHASHI NORIO
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01F10/26 , H01F41/18
摘要： PROBLEM TO BE SOLVED: To provide an MR (magnetoresistance) effect element which shows low noise, fine detection operation by enabling an MR change rate matching a magnetic material present across interface with a nonmagnetic intermediate layer, while suppressing the magnetic distortion of a magnetizatin free layer so as not to prevent its turning into a single magnetic domain, and a thin film magnetic head using the MR effect element.
SOLUTION: The MR effect element has an MR lamination comprising a magnetization fixed layer whose direction of magnetization is fixed, the nonmagnetic intermediate layer overlaid on the magnetization fixed layer, and the magnetizatin free layer which is overlaid on the nonmagnetic intermediate layer and whose direction of magnetization changes in response to an applied magnetic field. The magnetizatin free layer is formed with a magnetic distortion adjusting film containing CoFe on the side opposite to the side where magnetizatin free layer is in contact with the nonmagnetic intermediate layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种MR（磁阻效应）效应元件，其通过使与MR磁化变化率匹配的磁性材料与非磁性中间层的界面相匹配来显示低噪声，良好的检测操作，同时抑制磁性变形无磁化剂层，以防止其变成单个磁畴，以及使用MR效应元件的薄膜磁头。解决方案：MR效应元件具有MR层压，其包括磁化方向固定的磁化固定层，覆盖在磁化固定层上的非磁性中间层和覆盖在非磁性中间层上的无磁化剂层，其磁化方向响应于施加的磁场而变化。无磁化剂自由层由不含无磁化剂层与非磁性中间层接触的一侧相反一侧的含有CoFe的磁性变形调节膜形成。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2006066873A Method and apparatus for inspecting tunnel magnetoresistive effect element, and manufacturing method of tunnel magnetoresistive effect element 有权
标题翻译：隧道磁阻效应元件检测方法与装置及隧道磁阻效应元件的制造方法
公开(公告)号：JP2006066873A
公开(公告)日：2006-03-09
申请号：JP2005081768
申请日：2005-03-22
申请人： Shinka Jitsugyo Kk , Tdk Corp , Tdk株式会社 , 新科實業有限公司SAE Magnetics(H.K.)Ltd.
发明人： HACHISUGA NOZOMI , INAGE KENJI , TAKAHASHI NORIO , SHIMIZU TATSUJI , WONG PAK KIN
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , G11B5/455 , Y10T29/49021
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for inspecting a TMR element by which reliability related to the TMR element is easily and surely confirmed in a short time, a manufacturing method for the TMR element using the inspecting method, and the TMR element manufactured by the manufacturing method. SOLUTION: Resistance values of the TMR element are measured, respectively, by feeding a plurality of sense currents with different current values each other through the TMR element, and then ratio of change in resistance is found from the measured plurality of resistance values to evaluate the TMR element. COPYRIGHT: (C)2006,JPO&NCIPI

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