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    • 1. 发明授权
    • Wheel bearing device and manufacturing method therefor
    • 车轮轴承装置及其制造方法
    • US08511903B2
    • 2013-08-20
    • US12704221
    • 2010-02-11
    • Yoshinori MasudaTatsuya YokotaMotonori Nakao
    • Yoshinori MasudaTatsuya YokotaMotonori Nakao
    • F16C13/00B21D22/00
    • B21K1/40B21K1/12B60B27/00F16C33/64F16C2326/02
    • A wheel bearing device of the invention includes a flanged shaft member that includes a shaft portion to which a rolling bearing is assembled, a fitting shaft portion that is formed on one end side of the shaft portion and that is fitted to a center hole of a wheel, and a plurality of flange portions that extend radially outward on an outer peripheral surface located between the shaft portion and the fitting shaft portion and each of which has a through bolt hole in which a hub bolt for fastening the wheel is arranged. Each flange portion of the wheel bearing device is formed by side extrusion when a forged recess is formed at a center of an end surface of the fitting shaft portion by cold forging. An edge portion of a cross-sectional shape taken perpendicularly to a longitudinal direction of each flange portion is formed in an R-chamfered shape.
    • 本发明的车轮轴承装置包括:凸缘轴构件,其包括轴组件的滚动轴承的轴部,形成在所述轴部的一端侧并且嵌合于所述轴部的中心孔的嵌合轴部 轮和多个凸缘部,其在位于所述轴部和所述嵌合轴部之间的外周面上径向向外延伸,并且每个所述凸缘部具有贯通螺栓孔,所述贯通螺栓孔配置有用于紧固所述车轮的轮毂螺栓。 当通过冷锻在安装轴部的端面的中心形成锻造凹部时,车轮轴承装置的每个凸缘部分由侧挤出形成。 沿着每个凸缘部分的纵向方向垂直截取的横截面形状的边缘部分形成为R倒角形状。
    • 2. 发明申请
    • Hub Unit for Vehicle
    • 车辆枢纽单元
    • US20080100127A1
    • 2008-05-01
    • US11663353
    • 2005-09-26
    • Tatsuya Yokota
    • Tatsuya Yokota
    • B60B27/00B60B3/16
    • B60B27/0094B60B27/00B60B27/0005B60B27/0084F16C19/186F16C35/06F16C2326/02
    • A hub unit for vehicle according to the invention includes a flange formed with plural bolt-hole groups each of which includes plural bolt holes each having a female thread of the same nominal diameter formed in its inside surface and each of which has a hole-pattern of the bolt holes circumferentially arranged on the same pitch circle diameter with equal spacing. The plural bolt-hole groups are mutually different in at least either one of the nominal female-thread diameter and the pitch circle diameter R, so that plural types of components having different hole-patterns may be directly mounted to the flange without using an adaptor as an independent member. This leads to cost reduction.
    • 根据本发明的用于车辆的轮毂单元包括形成有多个螺栓孔组的凸缘,每个螺栓孔组包括多个螺栓孔,每个螺栓孔具有形成在其内表面中的相同公称直径的阴螺纹,并且每个具有孔图案 的螺栓孔以相等的间距圆周地布置在相同的节圆直径上。 多个螺栓孔群在公称内螺纹直径和节圆直径R中的至少一个中是相互不同的,因此具有不同孔图案的多种类型的部件可以直接安装到法兰上而不使用适配器 作为独立成员。 这导致成本降低。
    • 7. 发明授权
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US07473980B2
    • 2009-01-06
    • US11540537
    • 2006-10-02
    • Naoya SashidaTatsuya Yokota
    • Naoya SashidaTatsuya Yokota
    • H01L29/00
    • H01L21/76834H01L21/7682H01L27/10811H01L27/10855H01L27/11502H01L27/11507H01L28/40
    • The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.
    • 半导体器件包括形成在半导体衬底10上的电容器,包括下电极32,形成在下电极上的电介质膜34和形成在电介质膜上的上电极36,形成在半导体衬底上的第一绝缘膜42和 电容器,形成在第一绝缘膜上并电连接到电容器的第一互连48,用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50,第二绝缘膜58 形成在第一氢扩散防止膜上并且具有表面平坦化,形成在第二绝缘膜上的第三绝缘膜62,形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二防扩散膜72 形成在第三绝缘膜上的氢,覆盖第二绝缘膜 连接。 由于位于电容器上方的第二氢扩散防止膜被平坦化,所以可靠地防止电介质膜被氢还原。