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    • 7. 发明申请
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US20070063241A1
    • 2007-03-22
    • US11540537
    • 2006-10-02
    • Naoya SashidaTatsuya Yokota
    • Naoya SashidaTatsuya Yokota
    • H01L29/94H01L27/108H01L29/76H01L31/119
    • H01L21/76834H01L21/7682H01L27/10811H01L27/10855H01L27/11502H01L27/11507H01L28/40
    • The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.
    • 半导体器件包括形成在半导体衬底10上的电容器,包括下电极32,形成在下电极上的电介质膜34和形成在电介质膜上的上电极36,形成在半导体衬底上的第一绝缘膜42和 电容器,形成在第一绝缘膜上并电连接到电容器的第一互连48,用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50,第二绝缘膜58 形成在第一氢扩散防止膜上并具有表面平坦化,形成在第二绝缘膜上的第三绝缘膜62,形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二氢扩散防止膜72 的第三绝缘膜上形成的氢,覆盖第二绝缘膜 互连。 由于位于电容器上方的第二氢扩散防止膜被平坦化,所以可靠地防止电介质膜被氢还原。