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1. 发明授权

US08716711B2 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US08716711B2
公开(公告)日：2014-05-06
申请号：US13012125
申请日：2011-01-24
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/04
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

2. 发明申请

US20130214854A1 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20130214854A1
公开(公告)日：2013-08-22
申请号：US13881266
申请日：2011-10-31
申请人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Tatsuya Iwasaki
发明人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L29/786 , G05F3/02
CPC分类号： H01L29/7869 , G05F3/02 , H01L27/0705 , H01L27/11807 , H01L27/1203 , H03K17/063 , H03K17/693 , H03K19/20
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.
摘要翻译：提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

3. 发明授权

US07888684B2 Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide 有权
标题翻译：具有半导体的发光器件和发光器件的制造方法包括黄铜矿和含氧基金属盐之一
公开(公告)号：US07888684B2
公开(公告)日：2011-02-15
申请号：US12162924
申请日：2007-03-15
申请人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L31/0256 , H01L33/00
CPC分类号： H01L33/285 , H01L33/0087 , H01L33/26
摘要： There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.
摘要翻译：还没有能够提供高亮度的DC驱动型发光装置。本发明提供一种发光器件，包括：一对电极; 位于电极之间的发光体; 以及与发光体相邻的半导体层叠体，其中半导体含有黄铜矿和氧化硫化物之一。

4. 发明授权

US07829444B2 Field effect transistor manufacturing method 有权
标题翻译：场效应晶体管制造方法
公开(公告)号：US07829444B2
公开(公告)日：2010-11-09
申请号：US11269641
申请日：2005-11-09
申请人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L21/20
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/78693
摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译：提供一种用于制造场效应晶体管的新颖方法。在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

5. 发明申请

US20100279462A1 FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM 有权
标题翻译：使用无定形氧化膜作为通道层的场效应晶体管，使用无定形氧化膜作为通道层的场效应晶体管的制造方法和非晶形氧化膜的制造方法
公开(公告)号：US20100279462A1
公开(公告)日：2010-11-04
申请号：US12833850
申请日：2010-07-09
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L21/34 , C23C14/34 , H01L21/363
CPC分类号： H01L29/78693 , H01L29/66969 , Y10T29/41
摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.
摘要翻译：含有氢（或氘）的无定形氧化物被施加到晶体管的沟道层。因此，可以实现具有优异TFT特性的薄膜晶体管，具有小滞后，常关断操作，高ON / OFF比，高饱和电流等优异的TFT特性。此外，作为制造由非晶氧化物制成的沟道层的方法，在含有氢气和氧气的气氛中进行成膜，可以控制非晶氧化物的载流子浓度。

6. 发明申请

US20100276689A1 FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM 有权
公开(公告)号：US20100276689A1
公开(公告)日：2010-11-04
申请号：US12833855
申请日：2010-07-09
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/227
CPC分类号： H01L29/78693 , H01L29/66969 , Y10T29/41
摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

7. 发明授权

US07807956B2 Current detection circuit 有权
标题翻译：电流检测电路
公开(公告)号：US07807956B2
公开(公告)日：2010-10-05
申请号：US12254470
申请日：2008-10-20
申请人： Tatsuya Iwasaki , Koki Tamakawa , Isao Yamamoto
发明人： Tatsuya Iwasaki , Koki Tamakawa , Isao Yamamoto
IPC分类号： H01J40/14
CPC分类号： G01J1/44 , G01R19/0092
摘要： A current detection circuit detects photoelectric current that flows through a phototransistor, and outputs a current, which is proportional to the photoelectric current, via an output terminal. An input-side transistor is a PNP bipolar transistor, and is provided on a current path for the phototransistor. Output-side transistors are PNP bipolar transistors. The base terminals thereof are connected to that of the input-side transistor so as to form a common base terminal, and the emitter terminals thereof are connected to that of the input-side transistor so as to form a common emitter terminal, thereby forming a current mirror circuit. Each of first switches is provided between the collector of the corresponding output-side transistor and an output terminal. Each of second switches is provided between the collector of the corresponding output-side transistor and the ground terminal. A control unit controls the ON/OFF operations of the first switches and the second switches.
摘要翻译：电流检测电路检测流过光电晶体管的光电流，并通过输出端输出与光电流成比例的电流。输入侧晶体管是PNP双极晶体管，并且设置在用于光电晶体管的电流路径上。输出侧晶体管是PNP双极晶体管。其基极连接到输入侧晶体管的基极以形成公共基极，并且其发射极端子连接到输入侧晶体管的发射极端子，以形成公共发射极端子，从而形成电流镜电路。每个第一开关设置在相应的输出侧晶体管的集电极和输出端之间。每个第二开关设置在相应的输出侧晶体管的集电极和接地端子之间。控制单元控制第一开关和第二开关的ON / OFF操作。

8. 发明申请

US20100221420A1 PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM 审中-公开
标题翻译：磷光体膜和生产磷光体膜的方法
公开(公告)号：US20100221420A1
公开(公告)日：2010-09-02
申请号：US12779648
申请日：2010-05-13
申请人： Tomoyuki Oike , Tatsuya Iwasaki
发明人： Tomoyuki Oike , Tatsuya Iwasaki
IPC分类号： B05D5/06
CPC分类号： C23C16/306 , C09K11/584 , C23C14/0629 , C23C14/5806 , C23C16/56
摘要： A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less.
摘要翻译：提供了效率高，发光不均匀性低的荧光体膜以及荧光体膜的制造方法。荧光体膜包括含有添加元素的硫化锌化合物。添加元素是选自Ag，Cu和Au中的至少一种元素; 相对于Zn，添加元素的浓度为0.2摩尔％以上且5摩尔％以下。荧光体膜的膜厚为10nm以上且2μm以下。

9. 发明授权

US07768031B2 Light emitting device and method of producing a light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07768031B2
公开(公告)日：2010-08-03
申请号：US11677251
申请日：2007-02-21
申请人： Naho Itagaki , Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Naho Itagaki , Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L33/26 , H05B33/14
CPC分类号： H05B33/14 , C09K11/642 , C09K11/883
摘要： To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.
摘要翻译：为了提供发光效率优异的直流驱动型无机发光装置，提供了一种发光装置，包括：基板; 以及层叠在所述基板上的第一层和第二层，其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中，第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

10. 发明申请

US20100140611A1 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 有权
标题翻译：非晶氧化物和场效应晶体管
公开(公告)号：US20100140611A1
公开(公告)日：2010-06-10
申请号：US12597934
申请日：2008-05-22
申请人： Naho Itagaki , Tatsuya Iwasaki
发明人： Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/247
摘要： In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
摘要翻译：在场效应晶体管中，场效应晶体管的沟道层由包括In，Zn，N和O的无定形氧化物，N与N的原子组成比和O（N /（N + O））的原子组成比组成无定形氧化物等于或大于0.01原子％且等于或小于3原子％，并且非晶氧化物不包括Ga，或者在非晶氧化物包括Ga的情况下，包含在无定形氧化物小于N原子数。

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