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1. 发明授权

US07888684B2 Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide 有权
标题翻译：具有半导体的发光器件和发光器件的制造方法包括黄铜矿和含氧基金属盐之一
公开(公告)号：US07888684B2
公开(公告)日：2011-02-15
申请号：US12162924
申请日：2007-03-15
申请人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L31/0256 , H01L33/00
CPC分类号： H01L33/285 , H01L33/0087 , H01L33/26
摘要： There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.
摘要翻译：还没有能够提供高亮度的DC驱动型发光装置。本发明提供一种发光器件，包括：一对电极; 位于电极之间的发光体; 以及与发光体相邻的半导体层叠体，其中半导体含有黄铜矿和氧化硫化物之一。

2. 发明授权

US07768031B2 Light emitting device and method of producing a light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07768031B2
公开(公告)日：2010-08-03
申请号：US11677251
申请日：2007-02-21
申请人： Naho Itagaki , Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Naho Itagaki , Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L33/26 , H05B33/14
CPC分类号： H05B33/14 , C09K11/642 , C09K11/883
摘要： To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.
摘要翻译：为了提供发光效率优异的直流驱动型无机发光装置，提供了一种发光装置，包括：基板; 以及层叠在所述基板上的第一层和第二层，其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中，第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

3. 发明申请

US20090134427A1 LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE 有权
标题翻译：发光装置及其制造发光装置的方法
公开(公告)号：US20090134427A1
公开(公告)日：2009-05-28
申请号：US12162924
申请日：2007-03-15
申请人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/285 , H01L33/0087 , H01L33/26
摘要： There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.
摘要翻译：还没有能够提供高亮度的DC驱动型发光装置。本发明提供一种发光器件，包括：一对电极; 位于电极之间的发光体; 以及与发光体相邻的半导体层叠体，其中半导体含有黄铜矿和氧化硫化物之一。

4. 发明申请

US20120312999A1 RADIATION DETECTING ELEMENT 有权
标题翻译：辐射检测元件
公开(公告)号：US20120312999A1
公开(公告)日：2012-12-13
申请号：US13473005
申请日：2012-05-16
申请人： Tomoyuki Oike , Nobuhiro Yasui , Toru Den , Yoshihiro Ohashi , Ryoko Horie
发明人： Tomoyuki Oike , Nobuhiro Yasui , Toru Den , Yoshihiro Ohashi , Ryoko Horie
IPC分类号： G01T1/202
CPC分类号： G01T1/202 , G01T1/2018
摘要： Provided is a radiation detecting element, including: needle crystal scintillators and a protruding pattern in which: one end of the needle crystal scintillators is in contact with of upper surfaces of the multiple protrusions; a gap corresponding to a gap between the multiple protrusions is provided between portions of the needle crystal scintillators in contact with the upper surfaces of the multiple protrusions; and a number of the needle crystal scintillators in contact with one of the upper surfaces is 5 or less. Conventionally, since the needle crystals exhibit a state of a polycrystalline film in an early stage of vapor deposition, and light also spreads in a horizontal direction, the light received by a photodetector portion and the spatial resolution was lower than ideal values. The present invention enables the deviating region to be the ideal state in an early stage of growth.
摘要翻译：本发明提供一种辐射检测元件，包括：针状晶体闪烁体和突出图案，其中：针状晶体闪烁体的一端与多个突起的上表面接触; 在与多个突起的上表面接触的针状晶体闪烁体的部分之间设置与多个突起之间的间隙对应的间隙; 并且与上述一个表面接触的多个针状晶体闪烁体为5个以下。通常，由于针状晶体在气相沉积的早期阶段呈现多晶膜的状态，并且光也在水平方向上扩散，所以由光电检测器部分接收的光和空间分辨率低于理想值。本发明使得偏差区域在生长的早期阶段成为理想状态。

5. 发明授权

US09110176B2 Radiation detecting element 有权
标题翻译：辐射检测元件
公开(公告)号：US09110176B2
公开(公告)日：2015-08-18
申请号：US13473005
申请日：2012-05-16
申请人： Tomoyuki Oike , Nobuhiro Yasui , Toru Den , Yoshihiro Ohashi , Ryoko Horie
发明人： Tomoyuki Oike , Nobuhiro Yasui , Toru Den , Yoshihiro Ohashi , Ryoko Horie
IPC分类号： G01T1/20 , G01T1/202
CPC分类号： G01T1/202 , G01T1/2018
摘要： Provided is a radiation detecting element, including: needle crystal scintillators and a protruding pattern in which: one end of the needle crystal scintillators is in contact with of upper surfaces of the multiple protrusions; a gap corresponding to a gap between the multiple protrusions is provided between portions of the needle crystal scintillators in contact with the upper surfaces of the multiple protrusions; and a number of the needle crystal scintillators in contact with one of the upper surfaces is 5 or less. Conventionally, since the needle crystals exhibit a state of a polycrystalline film in an early stage of vapor deposition, and light also spreads in a horizontal direction, the light received by a photodetector portion and the spatial resolution was lower than ideal values. The present invention enables the deviating region to be the ideal state in an early stage of growth.
摘要翻译：本发明提供一种辐射检测元件，包括：针状晶体闪烁体和突出图案，其中：针状晶体闪烁体的一端与多个突起的上表面接触; 在与多个突起的上表面接触的针状晶体闪烁体的部分之间设置与多个突起之间的间隙对应的间隙; 并且与上述一个表面接触的多个针状晶体闪烁体为5个以下。通常，由于针状晶体在气相沉积的早期阶段呈现多晶膜的状态，并且光也在水平方向上扩散，所以由光电检测器部分接收的光和空间分辨率低于理想值。本发明使得偏差区域在生长的早期阶段成为理想状态。

6. 发明授权

US09360566B2 Radiation detector 有权
标题翻译：辐射检测器
公开(公告)号：US09360566B2
公开(公告)日：2016-06-07
申请号：US13552074
申请日：2012-07-18
申请人： Tatsuya Saito , Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
发明人： Tatsuya Saito , Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
IPC分类号： G01T1/20 , G01T1/202 , G21K4/00
CPC分类号： G01T1/202 , G01T1/2008 , G21K4/00 , G21K2004/04 , G21K2004/06
摘要： Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.
摘要翻译：提供一种辐射检测器，包括：包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层，其中：所述闪烁体晶体包括两个晶相，所述晶体相是包括包含多个柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1，第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间，折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。

7. 发明授权

US08274078B2 Metal oxynitride semiconductor containing zinc 有权
标题翻译：含锌的金属氮氧化物半导体
公开(公告)号：US08274078B2
公开(公告)日：2012-09-25
申请号：US12532185
申请日：2008-04-23
申请人： Naho Itagaki , Tatsuya Iwasaki , Masatoshi Watanabe , Toru Den
发明人： Naho Itagaki , Tatsuya Iwasaki , Masatoshi Watanabe , Toru Den
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/247
摘要： Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and In and at least one element selected from the group consisting of Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.
摘要翻译：提供了包含金属氮氧化物的氧氮化物半导体。金属氮氧化物含有Zn和In以及选自Ga，Sn，Mg，Si，Ge，Y，Ti，Mo，W和Al中的至少一种元素。金属氮氧化物的原子组成比为N，N /（N + O），为7原子％以上且在80原子％以下。

8. 发明授权

US08084307B2 Method for manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08084307B2
公开(公告)日：2011-12-27
申请号：US12447199
申请日：2007-11-09
申请人： Naho Itagaki , Tatsuya Iwasaki , Toru Den
发明人： Naho Itagaki , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/7869
摘要： A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.
摘要翻译：一种制造薄膜晶体管的方法，该薄膜晶体管含有具有氧化铟的沟道层11，包括形成氧化铟膜作为沟道层，并使所形成的氧化铟膜在氧化气氛中进行退火。

9. 发明授权

US07956346B2 Light emitting device having light emission and microstructure layers between electrode layers 有权
标题翻译：在电极层之间具有发光和微结构层的发光器件
公开(公告)号：US07956346B2
公开(公告)日：2011-06-07
申请号：US11371909
申请日：2006-03-10
申请人： Tatsuya Iwasaki , Toru Den
发明人： Tatsuya Iwasaki , Toru Den
IPC分类号： H01L29/06
CPC分类号： H01L33/16 , H01L33/18 , H01L51/5092 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device includes a substrate, a first electrode layer, a light emitting layer, a structure layer and a second electrode layer. The structure layer has first domains composed of a first material having a columnar shape and second domains composed of a second material, and on the substrate the structure layer and the light emitting layer are laminated between the first electrode layer and the second electrode layer.
摘要翻译：发光器件包括衬底，第一电极层，发光层，结构层和第二电极层。结构层具有由具有柱状的第一材料和由第二材料构成的第二区域构成的第一区域，并且在该基板上，在第一电极层和第二电极层之间层叠结构层和发光层。

10. 发明申请

US20090269880A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090269880A1
公开(公告)日：2009-10-29
申请号：US12447199
申请日：2007-11-09
申请人： Naho Itagaki , Tatsuya Iwasaki , Toru Den
发明人： Naho Itagaki , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L21/34
CPC分类号： H01L29/7869
摘要： A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.
摘要翻译：一种制造薄膜晶体管的方法，该薄膜晶体管含有具有氧化铟的沟道层11，包括形成氧化铟膜作为沟道层，并使所形成的氧化铟膜在氧化气氛中进行退火。

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