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1. 发明申请

US20070113886A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20070113886A1
公开(公告)日：2007-05-24
申请号：US11559477
申请日：2006-11-14
申请人： Tatsuya Arao , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi , Kazuo NISHI , Yuusuke Sugawara , Hironobu Takahashi , Shuji Fukai
发明人： Tatsuya Arao , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi , Kazuo NISHI , Yuusuke Sugawara , Hironobu Takahashi , Shuji Fukai
IPC分类号： H01L31/00
CPC分类号： H01L31/022408 , H01L27/14609 , H01L27/14636 , H01L27/14643 , H01L27/14692 , H01L31/03762
摘要： A photoelectric conversion device provided with a photoelectric conversion layer between a first electrode and a second electrode is formed. The first electrode is partially in contact with the photoelectric conversion layer, and a cross-sectional shape of the first electrode in the contact portion is a taper shape. In this case, part of a first semiconductor layer with one conductivity type is in contact with the first electrode. A planer shape in an edge portion of the first electrode is preferably nonangular, that is, a shape in which edges are planed or a curved shape. By such a structure, concentration of an electric field and concentration of a stress can be suppressed, whereby characteristic deterioration of the photoelectric conversion device can be reduced.
摘要翻译：形成在第一电极和第二电极之间设置有光电转换层的光电转换装置。第一电极部分地与光电转换层接触，并且接触部分中的第一电极的截面形状是锥形。在这种情况下，具有一种导电类型的第一半导体层的一部分与第一电极接触。第一电极的边缘部分中的平面形状优选地是非矩形的，即边缘是平面的形状或弯曲的形状。通过这样的结构，可以抑制电场的浓度和应力的集中，从而可以降低光电转换装置的特性劣化。

2. 发明授权

US08415664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08415664B2
公开(公告)日：2013-04-09
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

3. 发明授权

US08053816B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08053816B2
公开(公告)日：2011-11-08
申请号：US11681638
申请日：2007-03-02
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触，并且其中滤色器的端部位于光电转换层的另一端部的内部。

4. 发明申请

US20120086006A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120086006A1
公开(公告)日：2012-04-12
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

5. 发明授权

US08207591B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US08207591B2
公开(公告)日：2012-06-26
申请号：US13206544
申请日：2011-08-10
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/102
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.
摘要翻译：光电转换装置包括：第一电极; 并且在第一电极之上，包括具有一个导电性的第一半导体层，第一半导体层上的第二半导体层和具有与第二半导体层的一个导电性相反的导电性的第三半导体层的光电转换层。绝缘层在第三半导体层之上，第二电极在绝缘层的上方，并通过绝缘层与第三半导体层电连接。在不与绝缘层重叠的光电转换层的区域中去除第三半导体层和第二半导体层的一部分。

6. 发明申请

US20110291090A1 Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device 有权
标题翻译：光电转换装置及其制造方法及半导体装置
公开(公告)号：US20110291090A1
公开(公告)日：2011-12-01
申请号：US13206544
申请日：2011-08-10
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/0376
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.
摘要翻译：光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

7. 发明授权

US07838812B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07838812B2
公开(公告)日：2010-11-23
申请号：US12350271
申请日：2009-01-08
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H01J40/14 , H03F3/08 , H03K17/78 , H04N3/14
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

8. 发明授权

US07772667B2 Photoelectric conversion device and semiconductor device 有权
标题翻译：光电转换器件和半导体器件
公开(公告)号：US07772667B2
公开(公告)日：2010-08-10
申请号：US11383645
申请日：2006-05-16
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/075
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
摘要翻译：本发明提供抑制漏电流的光电转换装置。本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分在光电转换层的未被绝缘膜覆盖的区域中去除层。

9. 发明申请

US20060260675A1 PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE 有权
标题翻译：光电转换装置及其半导体装置的制造方法
公开(公告)号：US20060260675A1
公开(公告)日：2006-11-23
申请号：US11383645
申请日：2006-05-16
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/00
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
摘要翻译：本发明提供抑制漏电流的光电转换装置。本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分在光电转换层的未被绝缘膜覆盖的区域中去除层。

10. 发明授权

US07485838B2 Semiconductor device comprising a photoelectric current amplifier 有权
标题翻译：半导体器件包括光电放大器
公开(公告)号：US07485838B2
公开(公告)日：2009-02-03
申请号：US11491507
申请日：2006-07-24
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H03F3/08 , H03F3/04
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

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