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1. 发明申请

US20070210344A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070210344A1
公开(公告)日：2007-09-13
申请号：US11681638
申请日：2007-03-02
申请人： Tatsuya ARAO , Daiki YAMADA , Hidekazu TAKAHASHI , Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA , Hironobu TAKAHASHI
发明人： Tatsuya ARAO , Daiki YAMADA , Hidekazu TAKAHASHI , Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA , Hironobu TAKAHASHI
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触，并且其中滤色器的端部位于光电转换层的另一端部的内部。

2. 发明申请

US20110062543A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110062543A1
公开(公告)日：2011-03-17
申请号：US12949301
申请日：2010-11-18
申请人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
发明人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
IPC分类号： H01L31/06
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

3. 发明申请

US20110232571A1 FILM FORMATION APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：膜形成装置，成膜方法及制造光电转换装置的方法
公开(公告)号：US20110232571A1
公开(公告)日：2011-09-29
申请号：US13154503
申请日：2011-06-07
申请人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
发明人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： C23C16/50
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

4. 发明申请

US20100075455A1 FILM FORMATION APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：膜形成装置，成膜方法及制造光电转换装置的方法
公开(公告)号：US20100075455A1
公开(公告)日：2010-03-25
申请号：US12627473
申请日：2009-11-30
申请人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
发明人： Yoshikazu HIURA , Hiroki ADACHI , Hironobu TAKAHASHI , Yuusuke SUGAWARA , Tatsuya ARAO , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： H01L31/18
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在基板在缓冲室内进出的部分的狭缝，以及具有用于重绕基板的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

5. 发明申请

US20110073981A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110073981A1
公开(公告)日：2011-03-31
申请号：US12965367
申请日：2010-12-10
申请人： Kazuo NISHI , Hiroki ADACHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA , Tomoyuki AOKI , Eiji SUGIYAMA , Hironobu TAKAHASHI
发明人： Kazuo NISHI , Hiroki ADACHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA , Tomoyuki AOKI , Eiji SUGIYAMA , Hironobu TAKAHASHI
IPC分类号： H01L31/0224
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

6. 发明申请

US20110012218A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012218A1
公开(公告)日：2011-01-20
申请号：US12892381
申请日：2010-09-28
申请人： Yohei MONMA , Daiki YAMADA , Hidekazu TAKAHASHI , Yuusuke SUGAWARA , Kazuo NISHI
发明人： Yohei MONMA , Daiki YAMADA , Hidekazu TAKAHASHI , Yuusuke SUGAWARA , Kazuo NISHI
IPC分类号： H01L31/0232 , H01L23/48
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

7. 发明申请

US20100187405A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100187405A1
公开(公告)日：2010-07-29
申请号：US12752173
申请日：2010-04-01
申请人： Tatsuya ARAO , Atsushi HIROSE , Kazuo NISHI , Yuusuke SUGAWARA
发明人： Tatsuya ARAO , Atsushi HIROSE , Kazuo NISHI , Yuusuke SUGAWARA
IPC分类号： H01L27/144 , H03F3/08 , H01L31/102
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

8. 发明申请

US20100187534A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100187534A1
公开(公告)日：2010-07-29
申请号：US12752388
申请日：2010-04-01
申请人： Kazuo NISHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA
发明人： Kazuo NISHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA
IPC分类号： H01L27/146
CPC分类号： H01L27/14665 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1469 , H01L27/14692
摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
摘要翻译：本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。

9. 发明申请

US20120256286A1 PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置和电子装置及制造光电转换装置的方法
公开(公告)号：US20120256286A1
公开(公告)日：2012-10-11
申请号：US13528878
申请日：2012-06-21
申请人： Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA
发明人： Naoto KUSUMOTO , Kazuo NISHI , Yuusuke SUGAWARA
IPC分类号： H01L31/0224 , H01L29/868
CPC分类号： H01L31/147 , H01L27/12 , H01L27/1214 , H01L31/153 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
摘要翻译：一种光电转换装置，包括：第一基板，其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。第一电极和第二电极分别被附接到第三和第四电极，导电材料不仅设置在第一，第二，第三和第四电极的彼此面对，而且在第一和第二电极的第一和第二电极的侧表面处第二电极，以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。

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