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1. 发明申请

US20100187534A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100187534A1
公开(公告)日：2010-07-29
申请号：US12752388
申请日：2010-04-01
申请人： Kazuo NISHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA
发明人： Kazuo NISHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA
IPC分类号： H01L27/146
CPC分类号： H01L27/14665 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1469 , H01L27/14692
摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
摘要翻译：本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。

2. 发明申请

US20110073981A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110073981A1
公开(公告)日：2011-03-31
申请号：US12965367
申请日：2010-12-10
申请人： Kazuo NISHI , Hiroki ADACHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA , Tomoyuki AOKI , Eiji SUGIYAMA , Hironobu TAKAHASHI
发明人： Kazuo NISHI , Hiroki ADACHI , Junya MARUYAMA , Naoto KUSUMOTO , Yuusuke SUGAWARA , Tomoyuki AOKI , Eiji SUGIYAMA , Hironobu TAKAHASHI
IPC分类号： H01L31/0224
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

3. 发明申请

US20120299025A1 MANUFACTURING METHOD OF LIGHT EMITTING DEVICE AND MANUFACTURING DEVICE THEREOF 有权
公开(公告)号：US20120299025A1
公开(公告)日：2012-11-29
申请号：US13559963
申请日：2012-07-27
申请人： Junya MARUYAMA , Toru TAKAYAMA , Yumiko OHNO
发明人： Junya MARUYAMA , Toru TAKAYAMA , Yumiko OHNO
IPC分类号： H01L27/15
CPC分类号： H01L51/524 , H01L51/5259 , H01L51/56
摘要： The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.

4. 发明申请

US20120286315A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120286315A1
公开(公告)日：2012-11-15
申请号：US13558374
申请日：2012-07-26
申请人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
发明人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
IPC分类号： H01L27/32
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：（目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。（解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去密封衬底通过蚀刻或抛光。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

5. 发明申请

US20110312111A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110312111A1
公开(公告)日：2011-12-22
申请号：US13217311
申请日：2011-08-25
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
IPC分类号： H01L33/50
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

6. 发明申请

US20100195033A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100195033A1
公开(公告)日：2010-08-05
申请号：US12759999
申请日：2010-04-14
申请人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
发明人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
IPC分类号： G02F1/1333
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：（目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。（解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去密封衬底通过蚀刻或抛光。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

7. 发明申请

US20100035407A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100035407A1
公开(公告)日：2010-02-11
申请号：US12578722
申请日：2009-10-14
申请人： Yuugo GOTO , Yumiko FUKUMOTO , Toru TAKAYAMA , Junya MARUYAMA , Takuya TSURUME
发明人： Yuugo GOTO , Yumiko FUKUMOTO , Toru TAKAYAMA , Junya MARUYAMA , Takuya TSURUME
IPC分类号： H01L21/30 , H01L21/283
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

8. 发明申请

US20100015737A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL 有权
标题翻译：半导体器件及其制造方法以及制造基片材料的方法
公开(公告)号：US20100015737A1
公开(公告)日：2010-01-21
申请号：US12566040
申请日：2009-09-24
申请人： Toru TAKAYAMA , Yuugo GOTO , Yumiko FUKUMOTO , Junya MARUYAMA , Takuya TSURUME
发明人： Toru TAKAYAMA , Yuugo GOTO , Yumiko FUKUMOTO , Junya MARUYAMA , Takuya TSURUME
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

9. 发明申请

US20090239320A1 SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和剥离方法及其制造半导体器件的方法
公开(公告)号：US20090239320A1
公开(公告)日：2009-09-24
申请号：US12432906
申请日：2009-04-30
申请人： Toru TAKAYAMA , Junya MARUYAMA , Mayumi MIZUKAMI , Shunpei YAMAZAKI
发明人： Toru TAKAYAMA , Junya MARUYAMA , Mayumi MIZUKAMI , Shunpei YAMAZAKI
IPC分类号： H01L33/00 , B32B38/10 , H01L21/50
CPC分类号： H01L27/1266 , G02F1/1339 , G02F1/1341 , G02F1/1362 , G02F2001/13613 , H01L21/2007 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1248 , H01L27/3262 , H01L29/24 , H01L29/7869 , H01L33/44 , H01L2227/326 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
摘要翻译：本发明提供一种剥离方法，而不会对剥离层造成损害，其目的在于，不仅剥离面积小的剥离层，而且能够剥离整个表面上具有大面积的剥离层优良的产率。金属层或氮化物层11设置在基板上，并且还提供与上述金属层或氮化物层11接触的氧化物层12，此外，如果层叠膜形成或500℃的热处理或更高的温度，可以通过物理手段在层中或与氧化物层12的界面上容易且清楚地分离。

10. 发明申请

US20120322212A1 WIRELESS CHIP AND MANUFACTURING METHOD THEREOF 有权
标题翻译：无线芯片及其制造方法
公开(公告)号：US20120322212A1
公开(公告)日：2012-12-20
申请号：US13596376
申请日：2012-08-28
申请人： Koji DAIRIKI , Junya MARUYAMA , Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN
发明人： Koji DAIRIKI , Junya MARUYAMA , Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN
IPC分类号： H01L21/56
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译：本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电层作为天线起作用。

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