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1. 发明申请

US20100316858A1 SYNTHETIC OPAQUE QUARTZ GLASS AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：合成OPAQUE QUARTZ玻璃及其制造方法
公开(公告)号：US20100316858A1
公开(公告)日：2010-12-16
申请号：US12515727
申请日：2007-12-04
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Katsuhide Orikasa , Makoto Tanaka
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Katsuhide Orikasa , Makoto Tanaka
IPC分类号： C03B20/00 , C03B8/04 , C03C11/00 , B32B17/00
CPC分类号： C03B19/1453 , C03B2201/07 , C03B2201/23 , C03C3/06 , C03C2201/80 , Y10T428/24967 , Y10T428/249969
摘要： Provided is a method for producing a synthetic opaque quartz glass where flame processing can be performed in high purity with a simple way and even a large sized one can be produced, and the synthetic opaque quartz glass.A method for producing a synthetic opaque quartz glass which comprises the step of heating and burning a quartz glass porous body under a pressure of from 0.15 MPa to 1000 MPa at a temperature of from 1200° C. to 2000° C. The quartz glass porous body is prepared by depositing quartz glass particles which are produced by hydrolyzing a silicon compound with an oxyhydrogen flame.
摘要翻译：提供一种制造合成不透明石英玻璃的方法，其中可以以简单的方式进行高纯度的火焰加工，甚至可以制造大尺寸的方法，以及合成的不透明石英玻璃。一种合成不透明石英玻璃的制造方法，其特征在于，在1200℃〜2000℃的温度下，在0.15MPa〜1000MPa的压力下对石英玻璃多孔体进行加热燃烧的工序。通过沉积通过用氢氧焰水解硅化合物而制备的石英玻璃颗粒来制备体。

2. 发明授权

US07365037B2 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US07365037B2
公开(公告)日：2008-04-29
申请号：US11076944
申请日：2005-03-11
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03C3/04 , C03C3/095 , C03B20/00
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为用于制造半导体的等离子体反应的夹具材料，本发明提供了具有耐等离子体腐蚀性，特别是耐氟基等离子体气体的耐腐蚀性的石英玻璃，其可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

3. 发明授权

US5977000A High purity opaque silica glass 失效
标题翻译：高纯度不透明石英玻璃
公开(公告)号：US5977000A
公开(公告)日：1999-11-02
申请号：US977887
申请日：1997-11-25
申请人： Tatsuhiro Sato , Akira Fujinoki , Kyoichi Inaki , Nobumasa Yoshida , Tohru Yokota
发明人： Tatsuhiro Sato , Akira Fujinoki , Kyoichi Inaki , Nobumasa Yoshida , Tohru Yokota
IPC分类号： C03B5/02 , C03B5/08 , C03B19/09 , C03B20/00 , C03C3/06 , C03C4/08 , C03C11/00
CPC分类号： C03B5/08 , C03B19/09 , C03B20/00 , C03B5/021 , C03C3/06 , C03C2201/02 , C03C2201/80 , Y10S501/904 , Y10S501/905 , Y10T428/249969
摘要： Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and cooling after maintaining at the above temperature.
摘要翻译：密度为2.0〜2.18g / cm 3的不透明二氧化硅玻璃，二氧化硅玻璃中的钠和钾元素浓度为0.5ppm以下，OH基浓度为30ppm以下，并且含有具有以下的独立气泡的气泡物理值：气泡直径为300μm以下，气泡密度为100,000〜1,000,000个气泡/ cm 3，以及不透明石英玻璃的制造方法，其特征在于，填充粒径为10〜350μm的石英原料粒子在耐热模具中，将其在非氧化性气氛中从室温加热到低于50-150℃的温度，而不是以不升温速度将上述原料颗粒熔化的温度超过50℃/分钟，然后缓慢加热至高于10℃至80℃的温度，高于石英原料颗粒以10℃/分钟或更低的速度熔化的温度，并保持冷却在上述温度下。

4. 发明授权

US07841211B2 Production process of synthetic quartz glass 有权
标题翻译：人造石英玻璃的生产工艺
公开(公告)号：US07841211B2
公开(公告)日：2010-11-30
申请号：US10535935
申请日：2003-11-28
申请人： Tatsuhiro Sato , Takahiro Kaitou , Akira Fujinoki , Toshiyuki Kato , Tohru Segawa , Nobumasa Yoshida
发明人： Tatsuhiro Sato , Takahiro Kaitou , Akira Fujinoki , Toshiyuki Kato , Tohru Segawa , Nobumasa Yoshida
IPC分类号： C03B20/00 , C03B19/14
CPC分类号： C03C3/06 , C03B19/1453 , C03B2201/03 , C03B2201/04 , C03B2201/07 , C03B2201/075 , C03B2201/20 , C03B2201/24 , C03C2201/02 , C03C2201/11 , C03C2201/23 , C03C2201/24 , C03C2201/26
摘要： First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cm−1 or more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.
摘要翻译：首先，提供了杂质少，具有等于或高于天然石英玻璃的高温粘度特性的合成石英玻璃的制造方法，即使在高温环境下也几乎不变形，特别是高度耐热的合成石英玻璃的生产过程，其不产生气泡并且致密。其次，提供了通过本发明的制造方法容易获得的高耐热性合成石英玻璃体，特别是不产生气泡的透明或黑色石英玻璃体，具有高红外吸收率和排放率，对防止碱金属的扩散具有极高的效果。该方法是制造吸收系数在245nm为0.05cm -1以上的高耐热性石英玻璃体的工序，对二氧化硅多孔体进行还原处理，然后进行烧成，由此形成致密的玻璃身体。

5. 再颁专利

USRE41249E1 Quartz glass body having improved resistance against plasma corrosion, and method for production thereof 有权
标题翻译：具有改善的耐等离子体腐蚀性的石英玻璃体及其制造方法
公开(公告)号：USRE41249E1
公开(公告)日：2010-04-20
申请号：US11633136
申请日：2006-11-30
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Akira Fujinoki , Kyoichi Inaki , Tomoyuki Shirai
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Akira Fujinoki , Kyoichi Inaki , Tomoyuki Shirai
IPC分类号： B32B15/00
CPC分类号： C30B31/14 , C03B19/01 , C03B19/066 , C03B19/1453 , C03B20/00 , C03B32/00 , C03B2201/30 , C03B2201/32 , C03B2201/34 , C03B2201/40 , C03B2201/42 , C03B2201/50 , C03B2201/54 , C03C3/06 , C03C2201/32 , C30B25/12 , C30B35/00 , Y10T428/24496 , Y10T428/26 , Y10T428/315
摘要： An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
摘要翻译：本发明的目的是提供一种石英玻璃体，特别是用于制造具有优异的耐等离子体腐蚀性的半导体的等离子体反应用石英玻璃夹具，特别是对F系气态等离子体的优异的耐腐蚀性; 及其制造方法。提供由含有金属元素并具有改善的等离子体腐蚀性的石英玻璃制成的体，其含有以每100cm 3小于100mm 2的投影面积表示的量的气泡和结晶相。

6. 发明申请

US20090139265A1 Method and device for manufacturing silica glass 审中-公开
标题翻译：制造石英玻璃的方法和装置
公开(公告)号：US20090139265A1
公开(公告)日：2009-06-04
申请号：US12315131
申请日：2008-11-28
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Masaki Andou
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Masaki Andou
IPC分类号： C03B19/06
CPC分类号： C03B19/01 , C03B19/09
摘要： ProblemTo provide a method for manufacturing silica glass and device for manufacturing silica glass that facilitates the simple manufacture of a highly pure, bubble-free large flat-plate silica glass ingot in a short time.Solving MeansIn a method for manufacturing silica glass in which a silica glass powder is dropped from a powder supply device above a rotating furnace and layered in a centre portion of a furnace bottom, and then heat-fused and expanded in an outer circumferential direction of the furnace to form an ingot, the drop position and a fusion position of the silica glass powder is dispersed in the bottom portion of the furnace. The drop position of the silica glass powder is displaced from the centre portion of the bottom portion of the furnace, and the silica glass powder is preferably dispersed in the bottom portion of the furnace by the rotational movement of one or both of the powder supply device and the bottom portion of the furnace.
摘要翻译：问题提供二氧化硅玻璃的制造方法和二氧化硅玻璃的制造装置，能够在短时间内简单地制造高纯度，无气泡的大平板状硅石玻璃锭。解决方法在一种制造石英玻璃的方法中，其中将二氧化硅玻璃粉末从旋转炉上方的粉末供应装置落下并层叠在炉底的中心部分，然后在外圆周方向上热熔和膨胀形成锭的炉子，石英玻璃粉末的落下位置和熔融位置分散在炉底部。二氧化硅玻璃粉末的下落位置从炉底部的中心部分位移，石英玻璃粉末优选通过粉末供给装置中的一个或两个的旋转运动分散在炉底部和炉底部分。

7. 发明授权

US06887576B2 Quartz glass body having improved resistance against plasma corrosion, and method for production thereof 有权
标题翻译：具有改善的耐等离子体腐蚀性的石英玻璃体及其制造方法
公开(公告)号：US06887576B2
公开(公告)日：2005-05-03
申请号：US09935334
申请日：2001-08-22
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Akira Fujinoki , Kyoichi Inaki , Tomoyuki Shirai
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Akira Fujinoki , Kyoichi Inaki , Tomoyuki Shirai
IPC分类号： C03B19/01 , C03B19/06 , C03B19/14 , C03B32/00 , C03C1/00 , C03C3/06 , C03C21/00 , C03C23/00 , C30B25/12 , C30B31/14 , B32B17/06 , B32B9/00
CPC分类号： C30B31/14 , C03B19/01 , C03B19/066 , C03B19/1453 , C03B20/00 , C03B32/00 , C03B2201/30 , C03B2201/32 , C03B2201/34 , C03B2201/40 , C03B2201/42 , C03B2201/50 , C03B2201/54 , C03C3/06 , C03C2201/32 , C30B25/12 , C30B35/00 , Y10T428/24496 , Y10T428/26 , Y10T428/315
摘要： An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
摘要翻译：本发明的目的是提供一种石英玻璃体，特别是用于制造具有优异的耐等离子体腐蚀性的半导体的等离子体反应用石英玻璃夹具，特别是对F系气态等离子体的优异的耐腐蚀性; 及其制造方法。提供了由含有金属元素并且具有改善的等离子体腐蚀性的石英玻璃制成的体，其含有以每100cm 2小于100mm 2的投影面积表示的量的气泡和结晶相， SUP> 3 。

8. 发明授权

US07661277B2 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US07661277B2
公开(公告)日：2010-02-16
申请号：US12003353
申请日：2007-12-21
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03B19/00 , C03B20/00 , C03C3/00 , C03C3/06 , B32B17/06 , B32B18/00
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为制造半导体的等离子体反应中使用的夹具材料，本发明提供一种具有耐等离子体腐蚀性，特别是耐氟等离子体气体的耐腐蚀性的石英玻璃，可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

9. 发明申请

US20090098370A1 BLACK SYNTHETIC QUARTZ GLASS WITH A TRANSPARENT LAYER 审中-公开
标题翻译：黑色合成石英玻璃与透明层
公开(公告)号：US20090098370A1
公开(公告)日：2009-04-16
申请号：US12249616
申请日：2008-10-10
申请人： Tatsuhiro Sato , Nobumasa Yoshida
发明人： Tatsuhiro Sato , Nobumasa Yoshida
IPC分类号： B32B17/06 , C03C15/00
CPC分类号： C03C3/06 , C03B19/1453 , C03B2201/07 , C03B2201/075 , C03B2201/20 , C03C4/02 , C03C4/082 , C03C23/008 , C03C2201/02 , C03C2201/26 , C03C2203/54 , Y10T428/261
摘要： To provide a black synthetic quartz glass with a transparent layer, which has high emissivity in the far infrared region, has excellent light-shielding properties, maintains the same degree of purity as synthetic quartz glass in terms of metal impurities, has high-temperature viscosity characteristics comparable to natural quartz glass, can undergo high-temperature processing like welding, and does not release carbon from its surface; together with a method for the production thereof.A porous silica glass body containing hydroxyl groups is subjected to a gas phase reaction in a volatile organosilicon compound atmosphere at a temperature between 100° C. and 1200° C. and, following the reaction, evacuation is commenced and, on reaching a degree of vacuum exceeding 10 mmHg (1343 Pa), heating is carried out at a temperature between 1200° C. and 2000° C. to produce a compact glass body.
摘要翻译：为了提供具有透明层的黑色合成石英玻璃，其在远红外区域具有高发射率，具有优异的遮光性能，在金属杂质方面保持与合成石英玻璃相同的纯度，具有高温粘度与天然石英玻璃相当的特性，可进行焊接等高温加工，不会从表面释放碳; 以及其生产方法。含有羟基的多孔二氧化硅玻璃体在100℃〜1200℃的温度下在挥发性有机硅化合物气氛中进行气相反应，反应开始后，达到一定程度的真空度超过10mmHg（1343Pa），在1200℃〜2000℃的温度下进行加热，生成紧凑的玻璃体。

10. 发明申请

US20080113174A1 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US20080113174A1
公开(公告)日：2008-05-15
申请号：US12003353
申请日：2007-12-21
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03B19/00 , B32B18/00 , C03C3/06
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为制造半导体的等离子体反应中使用的夹具材料，本发明提供一种具有耐等离子体腐蚀性，特别是耐氟等离子体气体的耐腐蚀性的石英玻璃，可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

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