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1. 发明授权

US5466355A Mosaic target 失效
标题翻译：马赛克目标
公开(公告)号：US5466355A
公开(公告)日：1995-11-14
申请号：US392458
申请日：1995-02-22
申请人： Tateo Ohhashi , Koichi Nakashima , Hideaki Fukuyo , Takakazu Seki
发明人： Tateo Ohhashi , Koichi Nakashima , Hideaki Fukuyo , Takakazu Seki
IPC分类号： C23C14/34
CPC分类号： H01J37/3429 , C23C14/3414
摘要： A mosaic target comprising a plurality of target block pieces of different kinds of materials selected from the group consisting of Ta, Mo, Ti, W, Zr, Nb and Si, and their alloys and compounds, said target block pieces being combined in a stripe pattern or in a radial pattern characterized in that said target block pieces have their abutting interfaces solid-phase bonded at a temperature no more than the melting points of the target block piece materials. A typical example is a Ta-Mo mosaic target. The solid-phase bonded mosaic target blank is machined to a target which is bonded to a backing plate. The solid-phase bonding produces a mosaic target of a unitary construction, eliminating gaps among the target block pieces without sacrificing the properties of the individual block pieces. Abnormal discharge owing to gaps or contamination of the resulting film by concurrent sputtering of the solder or the backing plate is avoided.
摘要翻译：一种马赛克靶，其包括选自Ta，Mo，Ti，W，Zr，Nb和Si的不同种类的材料的多个靶块，以及它们的合金和化合物，所述靶块被组合成条带图案或径向图案，其特征在于，所述目标块件在不超过目标块件材料的熔点的温度下具有其相邻接合部固相接合。一个典型的例子是Ta-Mo马赛克目标。将固相结合的马赛克目标坯料加工成结合到背板的靶。固相接合产生一体式结构的马赛克目标，消除目标块体之间的间隙，而不会牺牲各个块体的性质。避免了由于焊料或背板的同时溅射而导致的所得膜的间隙或污染导致的异常放电。

2. 发明授权

US5415829A Sputtering target 失效
标题翻译：溅射目标
公开(公告)号：US5415829A
公开(公告)日：1995-05-16
申请号：US172504
申请日：1993-12-22
申请人： Tateo Ohhashi , Takakazu Seki , Takeo Okabe , Koichi Yasui , Hideaki Fukuyo
发明人： Tateo Ohhashi , Takakazu Seki , Takeo Okabe , Koichi Yasui , Hideaki Fukuyo
IPC分类号： B22F9/00 , B22F9/04 , C22C1/04 , C23C14/34 , B22F3/15
CPC分类号： B22F9/04 , B22F9/005 , C22C1/045 , C23C14/3414 , B22F2009/041
摘要： A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder or mechanically alloying silicon and a plurality of metal powders to provide an alloy powder, (b) and then pressing the metal silicide powder or alloy powder. The invention also relates to the metal silicide targets or alloy targets so manufactured. In the mechanical alloying step, rapid and fine division and agglomeration of the mixed powder is repeated until the particles of the material powders are finely divided to a submicron level. They form aggregates tens of microns in diameter. The aggregates gradually take an equi-axed shape. Homogenization of the material powder mixture progresses to mixing on the atomic level, until alloying takes place.
摘要翻译：制造用于溅射的金属硅化物靶或合金靶的方法包括以下步骤：（a）将硅和金属机械合金化以提供金属硅化物粉末或机械合金化硅和多种金属粉末以提供合金粉末（b ），然后压入金属硅化物粉末或合金粉末。本发明还涉及如此制造的金属硅化物靶或合金靶。在机械合金化步骤中，重复混合粉末的快速精细分离和附聚，直到粉末颗粒细分为亚微米级。它们形成直径几十微米的聚集体。聚集体逐渐采取平等的形状。材料粉末混合物的均质化在原子水平上进行混合，直到发生合金化。

3. 发明授权

US5135629A Thin film deposition system 失效
标题翻译：薄膜沉积系统
公开(公告)号：US5135629A
公开(公告)日：1992-08-04
申请号：US535444
申请日：1990-06-08
申请人： Susumi Sawada , Osamu Kanou , Hironori Wada , Junichi Anan , Takakazu Seki
发明人： Susumi Sawada , Osamu Kanou , Hironori Wada , Junichi Anan , Takakazu Seki
IPC分类号： C23C14/56 , C23C16/44 , H01J37/32
CPC分类号： H01J37/32504 , C23C14/564 , C23C16/4401 , C23C16/4404 , H01J37/32559
摘要： In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.
摘要翻译：在通过气相生长薄膜沉积的系统中，通过在其中提供防污染装置来防止装置中的污染和沉积的薄膜内的颗粒的形成，所述抗污染装置选自（1）电解质在铜箔的无光泽表面上具有通过镀铜形成的铜或/或铜氧化物的细晶粒薄层的铜箔，（2）具有铜或/或铜的细粒薄层的电解铜箔铜箔通过铜箔在箔的表面上形成并且涂覆有与通过气相生长沉积在基材上作为薄膜沉积的材料相同或无害的材料，（3）波纹状金属箔，（4）通过压花形成有多个凹凸的金属箔。

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