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    • 1. 发明授权
    • Method of fabricating nitride-based semiconductor laser diode
    • 制造氮化物基半导体激光二极管的方法
    • US07736925B2
    • 2010-06-15
    • US11448800
    • 2006-06-08
    • Tan SakongYoun-joon SungHo-sun Paek
    • Tan SakongYoun-joon SungHo-sun Paek
    • H01L21/00
    • H01S5/22B82Y20/00H01S5/0213H01S5/16H01S5/2201H01S5/34333H01S2304/12
    • A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
    • 提供一种制造氮化物基半导体激光二极管的方法,其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。 该方法包括以下步骤:在(0001)GaN(氮化镓)衬底上形成具有至少两个掩模,该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层,使得n-GaN层的两个(1-100)边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层,有源层和p覆盖层,以形成边缘发射激光器腔结构,其中在有源层中产生的激光穿过n-GaN层的区域, 包层与活性层横向排列并被输出; 并蚀刻激光腔结构的(1-100)面以形成腔镜面。
    • 4. 发明申请
    • Method of fabricating nitride-based semiconductor laser diode
    • 制造氮化物基半导体激光二极管的方法
    • US20070087460A1
    • 2007-04-19
    • US11448800
    • 2006-06-08
    • Tan SakongYoun-joon SungHo-sun Paek
    • Tan SakongYoun-joon SungHo-sun Paek
    • H01L21/00
    • H01S5/22B82Y20/00H01S5/0213H01S5/16H01S5/2201H01S5/34333H01S2304/12
    • A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
    • 提供一种制造氮化物基半导体激光二极管的方法,其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。 该方法包括以下步骤:在(0001)GaN(氮化镓)衬底上形成具有至少两个掩模,该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层,使得n-GaN层的两个(1-100)边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层,有源层和p覆盖层,以形成边缘发射激光器腔结构,其中在有源层中产生的激光穿过n-GaN层的区域, 包层与活性层横向排列并被输出; 并蚀刻激光腔结构的(1-100)面以形成腔镜面。