专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07736925B2 Method of fabricating nitride-based semiconductor laser diode 失效
标题翻译：制造氮化物基半导体激光二极管的方法
公开(公告)号：US07736925B2
公开(公告)日：2010-06-15
申请号：US11448800
申请日：2006-06-08
申请人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
发明人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
摘要翻译：提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域，包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

2. 发明授权

US07483463B2 Ridge-waveguide semiconductor laser diode 有权
标题翻译：脊波导半导体激光二极管
公开(公告)号：US07483463B2
公开(公告)日：2009-01-27
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要翻译：提供了具有改进的电流注入结构的脊 - 波导半导体激光二极管。脊波导半导体激光二极管包括：基板; 形成在所述基板上的下部多半导体层; 形成在下多层半导体层上的有源层; 具有脊部并形成在有源层上的上多层半导体层; 以及形成在所述上多层半导体层上的上电极，其中所述上电极覆盖所述脊部的至少一个侧表面。

3. 发明授权

US07632742B2 Substrate for growing Pendeo epitaxy and method of forming the same 有权
标题翻译：用于生长Pendeo外延的底物及其形成方法
公开(公告)号：US07632742B2
公开(公告)日：2009-12-15
申请号：US11650981
申请日：2007-01-09
申请人： Ho-sun Paek , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Min-ho Yang
发明人： Ho-sun Paek , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Min-ho Yang
IPC分类号： H01L21/20
CPC分类号： C30B7/005 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
摘要翻译：提供了一种外延生长衬底及其制造方法。骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

4. 发明申请

US20070087460A1 Method of fabricating nitride-based semiconductor laser diode 失效
标题翻译：制造氮化物基半导体激光二极管的方法
公开(公告)号：US20070087460A1
公开(公告)日：2007-04-19
申请号：US11448800
申请日：2006-06-08
申请人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
发明人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
摘要翻译：提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域，包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

5. 发明授权

US08129260B2 Semiconductor substrates having low defects and methods of manufacturing the same 有权
标题翻译：具有低缺陷的半导体衬底及其制造方法
公开(公告)号：US08129260B2
公开(公告)日：2012-03-06
申请号：US11802667
申请日：2007-05-24
申请人： Ho-sun Paek , Youn-joon Sung , Kyoung-ho Ha , Joong-kon Son , Sung-nam Lee
发明人： Ho-sun Paek , Youn-joon Sung , Kyoung-ho Ha , Joong-kon Son , Sung-nam Lee
IPC分类号： H01L23/58
CPC分类号： H01L21/02647 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02469 , H01L21/02516 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02609 , H01L21/02642 , H01L21/02645
摘要： A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.
摘要翻译：半导体衬底包括第一半导体层和第二半导体层。第一半导体层由II-VI族半导体材料，III-V族半导体材料或II-VI族半导体材料和III-V族半导体材料形成。在第一半导体层中形成至少一个非晶区域和至少一个晶体区域。第二半导体层形成在第一半导体层上并且从至少一个晶体区域晶体生长。制造半导体衬底的方法包括制备生长衬底; 在生长衬底上晶体生长第一半导体层; 在所述第一半导体层中形成所述至少一个非晶区和所述至少一个晶体区; 以及使用所述至少一个非晶区域作为掩模和所述至少一个晶体区域作为种子在所述第一半导体层上形成第二半导体层。

6. 发明授权

US08114691B2 Semiconductor light emitting device having textured structure and method of manufacturing the same 有权
标题翻译：具有纹理结构的半导体发光器件及其制造方法
公开(公告)号：US08114691B2
公开(公告)日：2012-02-14
申请号：US12630880
申请日：2009-12-04
申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek
发明人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/025 , H01L33/20 , H01L33/22
摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
摘要翻译：提供具有纹理结构的半导体发光二极管及其制造方法。半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层第一半导体层和中间层。

7. 发明申请

US20080020552A1 Semiconductor substrates having low defects and methods of manufacturing the same 有权
标题翻译：具有低缺陷的半导体衬底及其制造方法
公开(公告)号：US20080020552A1
公开(公告)日：2008-01-24
申请号：US11802667
申请日：2007-05-24
申请人： Ho-sun Paek , Youn-joon Sung , Kyoung-ho Ha , Joong-kon Son , Sung-nam Lee
发明人： Ho-sun Paek , Youn-joon Sung , Kyoung-ho Ha , Joong-kon Son , Sung-nam Lee
IPC分类号： H01L21/20 , H01L21/00 , H01L31/0256 , H01L33/00
CPC分类号： H01L21/02647 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02469 , H01L21/02516 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02609 , H01L21/02642 , H01L21/02645
摘要： A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.
摘要翻译：半导体衬底包括第一半导体层和第二半导体层。第一半导体层由II-VI族半导体材料，III-V族半导体材料或II-VI族半导体材料和III-V族半导体材料形成。在第一半导体层中形成至少一个非晶区域和至少一个晶体区域。第二半导体层形成在第一半导体层上并且从至少一个晶体区域晶体生长。制造半导体衬底的方法包括制备生长衬底; 在生长衬底上晶体生长第一半导体层; 在所述第一半导体层中形成所述至少一个非晶区和所述至少一个晶体区; 以及使用所述至少一个非晶区域作为掩模和所述至少一个晶体区域作为种子在所述第一半导体层上形成第二半导体层。

8. 发明授权

US07935554B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07935554B2
公开(公告)日：2011-05-03
申请号：US12407361
申请日：2009-03-19
申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
发明人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
IPC分类号： H01L21/302
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L33/12 , H01L33/22
摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
摘要翻译：提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。光输出效率增加，半导体发光器件的内部缺陷减小。

9. 发明授权

US07759140B2 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07759140B2
公开(公告)日：2010-07-20
申请号：US11450389
申请日：2006-06-12
申请人： Jeong-wook Lee , Youn-joon Sung , Jae-hee Cho , Ho-sun Paek
发明人： Jeong-wook Lee , Youn-joon Sung , Jae-hee Cho , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01L33/12 , H01L33/22
摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.
摘要翻译：提供了一种发光器件及其制造方法。发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布完成此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

10. 发明申请

US20100081221A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING TEXTURED STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有纹理结构的半导体发光器件及其制造方法
公开(公告)号：US20100081221A1
公开(公告)日：2010-04-01
申请号：US12630880
申请日：2009-12-04
申请人： Jeong-wook LEE , Youn-joon Sung , Ho-sun Paek
发明人： Jeong-wook LEE , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/025 , H01L33/20 , H01L33/22
摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
摘要翻译：提供具有纹理结构的半导体发光二极管及其制造方法。半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层第一半导体层和中间层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式